VLSI & Microelectronics

Paper Code:EC601
(Module 1 : Lecture 3)
Intended Audience : B-Tech (ECE) , 3rd Year, (Section :A+B) , 6 th Sem
Dr. Surajit Bari
Assistant Professor , ECE Department ,Narula Institute of Technology, An
Autonomous Institute Under JIS Group , Affiliated to MAKAUT, WB
Ph.D.(Tech-MAKAUT,WB) , M-Tech (JU), B.E.(BU)
MIEEE(CAS , EDS) ,MIEI
E-mail: surajit.bari@nit.ac.in , Mob No. 8240925284/9432128450
 VLSI & Microelectronics

Module 1 : Lecture 3(Part I)

Recapitulation of MOSFET : Type, Structure, MOS
System under External Bias , Operation of
MOSFET
 Outlines

 MOSFET: Types
 Structure and Electrical Symbol of MOSFET
 MOS System under External Bias : Accumulation , Depletion ,
Inversion
 Operation of MOSFET
 Q & A Session
 Summary
 References
 MOSFET : Types
 Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are
the basic building block of Integrated Circuits (ICs) for the followings
reasons
• MOSFETs are symmetrical in structure
• Easier to fabricate
• Input impedance is high due to gate oxide
• Gate current is zero
• ON-OFF Switching characteristics is much better
• It has better thermal stability
• Low power consumption
MOSFET : Types
 Structure and Symbol of Enhancement MOSFET

n-Channel n-Channel

Two dimensional view: n-Channel

 Structure and Symbol of Depletion MOSFET

n-channel DE MOSFET

n-channel DE MOSFET
MOS System Under External Bias
1. Accumulation
MOS System under External Bias
2. Depletion
MOS System under External Bias
3. Inversion Threshold Voltage
 Operation of MOSFET

Formation of depletion region in an n-channel MOSFET

 Operation of MOSFET

Threshold Voltage

Formation of inversion region in an n-channel MOSFET

 Operation of MOSFET
Linear Region

VGS VGD =VGS -VDS

 Operation of MOSFET

Edge of saturation region

VGS VGD =VGS -VDS = VT0

 Operation of MOSFET

Operating beyond saturation region

VGD =VGS -VDS < VT0

VGS
 Q & A Session
Q1. What are the different types of MOSFET ?

Q2. Why MOSFETs are suitable candidate for IC fabrication ?

Q3. What is accumulation , depletion and inversion in MOSFETs ?

Q4. How channel is induced in the MOSFETs ?

Q5. What is channel pinch off ?

Q6. For which condition channel pinch-off occurs ?

Q7.Describe how carrier flow in the channel due to application of gate & drain voltage ?
 Summary

 Types of the MOSFET

 MOS System under external bias
 Operation of MOSFET
 References

[1]CMOS Digital Integrated Circuits Analysis and Design, 3rd Edition ,

S.M. Kang & Y. Leblebici, TMH.
[2] CMOS Analog Circuit Design, 2nd Edition , Allen & Holberg, Oxford
[3] Design of Analog CMOS Integrated Circuits, 2nd Edition ,Behzad
Razavi , TMH
Thank You
 VLSI & Microelectronics

Paper Code: EC 601

(Module1 : Lecture 3)
Intended Audience : B-Tech (ECE) , 3rd Year, (Section :A+B) , 6th Sem
Dr. Surajit Bari
Assistant Professor , ECE Department ,Narula Institute of Technology,
An Autonomous Institute Under JIS Group , Affiliated to MAKAUT, WB
Ph.D.(Tech-MAKAUT,WB) , M-Tech (JU), B.E.(BU)
MIEEE(CAS , EDS) ,MIEI
E-mail: surajit.bari@nit.ac.in , Mob No. 8240925284/9432128450
 VLSI & Microelectronics

Module 1 : Lecture 3 (Part II)

Current equations and I-V Characteristics of
MOSFETs
 Outlines

 Drain Current Equations

 Drain and Transfer Characteristics
 Q & A Session
 Summary
 References
 Current Voltage Equations of MOSFET
 To find out the expression of current through MOSFET , we can
consider a semiconductor bar as shown in Fig.
 If the charge density along the direction of current is Qd coulombs
per meter and velocity of the charge is v meters per second
 Then current I , can be expressed as I= Qd v
 Current Voltage Equations of MOSFET
 Now ,we can consider the potential difference
across the drain and source is zero as shown in
Fig.

 Channel charge induced for VGS = VTH

 For VGS ≥ VTH , the channel charge is proportional

to (VGS - VTH)

 Also there is uniform charge density (per unit

length) throughout the channel because of zero
potential difference between drain and source
 Current Voltage Equations of MOSFET
 Oxide capacitance per unit area of the MOSFET is COX

 Charge density per unit length can be written as Qd = WCOX [VGS – VTH ]
 Where , , WCOX indicates oxide capacitance per unit length
 Current Voltage Equations of MOSFET
 Now, drain voltage VD (>0) has been applied as shown
in Fig.

 Due to this drain voltage , potential increases zero to VD

from source end to drain end respectively

 Therefore , local voltage difference between gate and

channel varies from VGS to (VGS – VDS )

 So , charge density at any point x along the channel can

be written as Qd = WCOX [VGS – V(x) – VTH ] , where V(x) is
the channel potential at x
 Current Voltage Equations of MOSFET
 Therefore drain current ID can be expressed as

Negative sign inserted as charge carriers are negative in this case

 For semiconductors, v =μE, where μ is the mobility of charge carriers
and E is the electric field

 E(x)= − . If we consider is the mobility of electron then we have

 Current Voltage Equations of MOSFET

 Separating variable , the equation can be written as

 .Therefore the drain current equation can be written as

 = or

 =
 Current Voltage Equations of MOSFET

 =

 What will be the maximum from this equations ?

 That can be determined performing and

 Condition to occur maximum is -

 Maximum drain current ,

 - , known as overdrive voltage

 Current Voltage Equations of MOSFET
 If we consider
= , for small value of , the equation can
be approximated as

 Therefore , for small value of , the drain

current to and transistor operates in
linear region or triode region as shown in
Fig.
 Current Voltage Equations of MOSFET

 It is found that based on this equation

=,
when the is increasing beyond
, theoretically current drops

 But ,practically after pinch-off [= , current

remains at constant value and transistor
operates in saturation region

 Therefore saturation region current is equal to

maximum drain current
Fig. : Drain Characteristics
 Current Voltage Equations of MOSFET

 If the equation , is considered , then

transfer characteristics can be plotted as
shown in Fig .

 It is found ( threshold voltage) ,

transistor is in on state and for
transistor is in off state .

Fig. : Transfer Characteristics

 Current Voltage Equations of MOSFET
 So , there are two equations are used to describe the drain
characteristics of MOSFETs . One is for linear region equation and
another is for saturation region
For NMOS
 (Lin) = , for and (-)

 for and (-)

 Current Voltage Equations of MOSFET

For PMOS
 (Lin) = , for and (-)

 for and (-)

 Q & A Session

Q1. Derive drain current equations of MOSFET in linear and saturation region.

Q2. What are the condition to operate one MOSFET in linear and saturation region ?

Q3.Draw the drain characteristics of MOSFET and identify different region.

Q4. What is threshold voltage of MOSFET ?

Q5 . Explain the switching nature of MOSFET using transfer characteristics

 Summary

 Current equations , drain and transfer characteristics of MOSFET

 References

[1]CMOS Digital Integrated Circuits Analysis and Design, 3rd Edition ,

S.M. Kang & Y. Leblebici, TMH.
[2] CMOS Analog Circuit Design, 2nd Edition , Allen & Holberg, Oxford
[3] Design of Analog CMOS Integrated Circuits, 2nd Edition ,Behzad
Razavi , TMH
Thank You
 VLSI & Microelectronics

Paper Code:EC601
(Module 1: Lecture 3)
Intended Audience : B-Tech (ECE) , 3rd Year, (Section :A+B) , 6th Sem

Dr. Surajit Bari

Assistant Professor , ECE Department ,Narula Institute of Technology, An
Autonomous Institute Under JIS Group , Affiliated to MAKAUT, WB
Ph.D.(Tech-MAKAUT,WB) , M-Tech (JU), B.E.(BU)
MIEEE(CAS , EDS) ,MIEI
E-mail: surajit.bari@nit.ac.in , Mob No. 8240925284/9432128450
 VLSI & Microelectronics

Module 1 : Lecture 3 (Part III)

Channel Length Modulation , On Resistance
 Outlines

 Channel Length Modulation

 On Resistance
 Q & A session
 Summary
 References
 Channel Length Modulation
 After channel pinch-off ,if increases , then effective electrical channel
length decreases . This phenomenon is known as channel length
modulation

 Due to channel length modulation , the drain current becomes

dependent on drain voltage
 Channel Length Modulation
 Due to channel length modulation , consider is the effective
electrical channel length .Then saturation region current can be
expressed as

Where
 So ,
 Channel Length Modulation

 So ,


 And ,
 Therefore ,
 Where , is channel length modulation coefficient , unit
 Channel Length Modulation

• Effects of channel
length modulation on
drain characteristics
 On Resistance

 Linear region current ,

 So , on resistance can be expressed as

 That is, on resistance is controlled by overdrive voltage

 On Resistance

• Fig. shows the variation resistance of

resistance MOSFET in linear region
with respect to gate to source voltage

Fig. : MOSFET in linear region

Fig. : On resistance vs gate to source voltage Fig. : MOSFET as controlled linear resistor
 Q & A Session

Q1. What do you mean by channel length modulation ?

Q2 . Discuss the effect of channel length modulation on current equation and also on
drain characteristics

Q3. Find an expression of On resistance of MOSFET ?

Q4 . Which region of operation for MOSFET is useful for controlled resistance and
how ?
 Summary

 Channel length modulation and On resistance of MOSFET

 References

[1]CMOS Digital Integrated Circuits Analysis and Design, 3rd Edition ,

S.M. Kang & Y. Leblebici, TMH.
[2] CMOS Analog Circuit Design, 2nd Edition , Allen & Holberg, Oxford
[3] Design of Analog CMOS Integrated Circuits, 2nd Edition ,Behzad
Razavi , TMH
Thank You