UNIT-IV

Fundamentals of
semiconductor devices
and digital circuits
Lecture 29-30
Prepared By:
Pawandeep Kaur
Assistant Professor and Head-ECE
 MOSFET
• Stands for: Metal Oxide Semiconductor Field Effect Transistor.
• It is a voltage controlled device.
 Types of MOSFET
The MOSFET is classified into two types:
• Enhancement mode MOSFET
The Enhancement mode MOSFET is equivalent
to “Normally Open” switch and these types of
transistors require gate-source voltage to switch
ON the device.
• Depletion mode MOSFET
The depletion mode MOSFETs are generally
known as ‘Switched ON’ devices, because these
transistors are generally closed when there is no
bias voltage at the gate terminal.
 MOSFET Symbol
In general, the MOSFET is a four-terminal device with a Drain (D), Source (S), gate (G) and a Body (B) / Substrate
terminals.
 QUICK QUIZ (POLL)
Which of the following terminals does not belong to the MOSFET?
a) Drain
b) Gate
c) Base
d) Source
N-Enhancement MOSFET
Depletion N-MOSFET
N Channel E-MOSFET: Transfer Characteristics
N Channel D-MOSFET: Transfer Characteristics
Explanation Slide
 N Channel E-MOSFET: Construction
• A slab of p-type material is formed from a
silicon base and is referred to as the substrate.
• The source and drain terminals are connected
through metallic contacts to n-doped regions.
• the absence of a channel
• layer is still present to isolate the gate metallic
platform from the region between the drain and
source
 N Channel E-MOSFET: Operation
• If is set at 0 V and a voltage applied between
the drain and source of the device, the
absence of an n-channel will result in a
current of effectively zero amperes.
Case1:+VGS,VDS=0

Depletion , accumulation
and inversion
………..channel enhance
(formed)
 N Channel E-MOSFET: Operation
Case2:VGS>0,VDS>0
• In Fig., both and have been set at some positive voltage greater than
0 V, establishing the drain and gate at a positive potential with respect
to the source.
• The positive potential at the gate will pressure the holes (since like
charges repel) in the p-substrate along the edge of the layer to leave
the area and enter deeper regions of the p-substrate, as shown in the
figure.
• The result is a depletion region near the insulating layer void of holes.
However, the electrons in the p-substrate (the minority carriers of the
material) will be attracted to the positive gate and accumulate in the
region near the surface of the layer.
• The layer and its insulating qualities will prevent the negative carriers
from being absorbed at the gate terminal.
• As increases in magnitude, the concentration of electrons near the What
surface increases until eventually the induced n-type region can happened if
support a measurable flow between drain and source.
VGS>>VT
• The level of that results in the significant increase in drain current is
called the threshold voltage and is given the symbol
 N Channel E-MOSFET: Operation
• Since the channel is nonexistent with and
“enhanced” by the application of a positive gate-to-
source voltage, this type of MOSFET is called an
enhancement-type MOSFET.
 N
Case3:Channel E-MOSFET: Operation
1.VGS>>VT
2. VDS>>VP
• As is increased beyond the threshold level, the density of free
carriers in the induced channel will increase, resulting in an
increased level of drain current.
• However, if we hold constant and increase the level of , the
drain current will eventually reach a saturation level as occurred
for the JFET and depletion-type MOSFET.
• The leveling off of is due to a pinching-off process depicted by
the narrower channel at the drain end of the induced channel.
• For levels of the drain current is related to the applied gate-to-
source voltage by the following nonlinear relationship:
N Channel E-MOSFET: Transfer Characteristics
N Channel E-MOSFET: Transfer Characteristics
 MOSFET: Regions of Operation
• MOSFET also operates under three regions:
• Cut-Off Region
The region in which the MOSFET will be OFF(Vgs<Vt) as there will be no current
flow through it. In this region, MOSFET behaves like an open switch and is thus
used when they are required to function as electronic switches.
• Ohmic or Linear Region
The region where in the current increases with an increase in the value of . When
MOSFETs are made to operate in this region, they can be used as amplifiers.
• Saturation Region
In saturation region, the MOSFETs have their constant and occurs once exceeds
the value of pinch-off voltage . Under this condition, the device will act like a
closed switch through which a saturated value of flows. As a result, this operating
region is chosen whenever MOSFETs are required to perform switching operations.
 QUICK QUIZ (POLL)
In a MOSFET, the polarity of the inversion layer is the same as that of the
a. Charge on the gate electrode
b. Minority carriers in the drain
c. Majority carriers in the substrate
d. Majority carriers in the source
 QUICK QUIZ (POLL)
Consider an ideal E-MOSFET. If Vgs = 0V, then Id = ?
a) Zero
b) Maximum
c) Id(on)
d) Idd
 QUICK QUIZ (POLL)
The controlling parameter in MOSFET is
a) Vds
b) Ig
c) Vgs
d) Is
 N Channel D-MOSFET: Construction
• A slab of p-type material is formed from a
silicon base and is referred to as the substrate.
• The source and drain terminals are connected
through metallic contacts to n-doped regions.
• the presence of a channel
• layer is still present to isolate the gate metallic
platform from the region between the drain and
source
 CASE1: N Channel D-MOSFET: Operation
VGS=0,VDS=0

• The resulting current with is labeled

What happened
VDS>0

• In Fig., the gate-to-source voltage is set to zero

volts by the direct connection from one terminal to
the other, and a voltage is applied across the
drain-to-source terminals.
• The result is an attraction for the positive potential
at the drain by the free electrons of the n-channel
and a current would get established.
 N Channel D-MOSFET: Operation
• Case2: has been set at a negative voltage

• Suppose has been set at a negative voltage such as -1

V. The negative potential at the gate will tend to
pressure electrons toward the p-type substrate (like
charges repel) and attract holes from the p-type
substrate (opposite charges attract) as shown in Fig.
• Depending on the magnitude of the negative bias
established by , a level of recombination between
electrons and holes will occur that will reduce the
number of free electrons in the n-channel available for
conduction.
• The more negative the bias, the higher the rate of
recombination. The resulting level of drain current is
therefore reduced with increasing negative bias for
 N Channel D-MOSFET: Operation
• CASE3: For positive values of ,
• the positive gate will draw additional electrons
(free carriers) from the p-type substrate due to
the reverse leakage current and establish new
carriers through the collisions resulting between
accelerating particles.
• As the gate-to-source voltage continues to
increase in the positive direction, transfer
characteristics curve reveals that the drain
current will increase at a rapid rate for the
reasons listed above
N Channel D-MOSFET: Transfer Characteristics
 QUICK QUIZ (POLL)
The threshold voltage of an n-channel MOSFET can be increased by
a. Increasing the channel dopant concentration.
b. Reducing the channel dopant concentration.
c. Reducing the gate oxide thickness.
d. Reducing the channel length.
 QUICK QUIZ (POLL)
Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT

a) Both i & ii
b) Both ii & iv
c) Both i & iv
d) Only ii
 QUICK QUIZ (POLL)
MOSFET has greatest application in digital circuit due to
A. Low power consumption
B. Less noise
C. Small amount of space it takes on a chip
D. All of the above
 Integrated Circuits
• Integrated circuits (ICs) are a keystone of modern electronics. They are the
heart and brains of most circuits. They are the ubiquitous little black
"chips" you find on just about every circuit board.
• Jack Kilby is probably most famous for his invention of the integrated
circuit, for which he received the Nobel Prize in Physics in the year 2000.
 Why are ICs popular?
 It is reliable with complex circuits.
 It meets the need for low power consumption.
 It offers small size and weight.
 It is economical to produce.
 It offers new and better solutions to system problems.
 Limitations
 Coils or indicators cannot be fabricated.
It can be handle only limited amount of power.
High voltage operation are not easily obtained.
 Electrostatic Discharge (ESD)
• Static electricity is created when two substances are rubbed together or
separated. The rubbing or separating causes the transfer of electrons
from one substance to the other. This results in one substance being
positively charged and the other substance being negatively charged.
When either substance comes in contact with a conductor, an electrical
current flows until it is at the same electrical potential as ground. This is
referred to as electrostatic discharge (ESD).
 Electrostatic Discharge (ESD)
• Static electricity is commonly experienced during the winter months
when the environment is dry. Synthetics, especially plastic, are excellent
generators of static electricity. When walking across a vinyl or carpeted
floor and touching a metal door knob or other conductor, an electrical arc
to ground may result and a slight shock is felt. For a person to feel a
shock, the electrostatic potential must be 3,500 to 4,000 volts. Lesser
voltages are not apparent to a person’s nervous system even though they
are present.
 Safety Precautions
• Antistatic workstations (Figure 39–30)
are designed to provide a ground
path for static charges that could
damage a component. They have a
conductive or antistatic work surface
that is connected to both a ground
and the worker’s skin through a wrist
strap. The wrist strap has a minimum
of 500 k resistance to prevent shock
in case of contact with a live circuit.
 Safety Precautions
1. Prior to starting work on sensitive electronic equipment or circuits, the
electronics technician should be grounded using a wrist strap to discharge any
static electric charge built up on the body.
2. Always check manuals and package materials for ESD warnings and
instructions.
3. Always discharge the package of an ESD sensitive device prior to removing it.
Keep the package grounded until the device is placed in the circuit.
4. Minimize the handling of ESD devices. Handle an ESD device only when ready
to place it in the circuit.
5. When handling an ESD device, minimize physical movement such as scuffing
feet.
6. When removing and replacing an ESD device, avoid touching the component
leads
 Safety Precautions
7. Do not permit an ESD device to come in contact with clothing or other
ungrounded materials that could have an electrostatic discharge.
8. Prior to touching an ESD device, always touch the surface on which it
rests for a minimum of one second to provide a discharge path.
9. When working on a circuit containing an ESD device, do not touch any
material that will create a static charge.
10. Use a soldering iron with the tip grounded. Do not use plastic solder
suckers with ESD devices.