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2nd Lecture Part2

This document discusses p-type and n-type semiconductors. P-type materials have more holes than electrons, making them positively charged. N-type materials have more electrons than holes, giving them a negative charge. Intrinsic semiconductors contain equal numbers of electrons and holes. Doping semiconductors with impurities introduces excess electrons or holes. Current in semiconductors is carried by both the drift of charge carriers under an electric field and by diffusion of carriers from high to low concentration areas. The junction between a p-type and n-type semiconductor results in a depletion region without charge carriers.

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17 views38 pages

2nd Lecture Part2

This document discusses p-type and n-type semiconductors. P-type materials have more holes than electrons, making them positively charged. N-type materials have more electrons than holes, giving them a negative charge. Intrinsic semiconductors contain equal numbers of electrons and holes. Doping semiconductors with impurities introduces excess electrons or holes. Current in semiconductors is carried by both the drift of charge carriers under an electric field and by diffusion of carriers from high to low concentration areas. The junction between a p-type and n-type semiconductor results in a depletion region without charge carriers.

Uploaded by

faruktokuslu16
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Overview

 What are p-type and n-type semiconductors?


 Intrinsic Semiconductors
 Doped Semiconductors
 n-type and p-type Semiconductors
 Drift (conduction) Current
 Diffusion Current
 pn Junction
What are p-type and n-type ?
 Semiconductors are classified into p-type and n-type
semiconductor.
 p-type: A p-type material is one in which holes are majority
carriers i.e. they are positively charged materials (++++)
 n-type: An n-type material is one in which electrons are
majority carriers i.e. they are negatively charged materials (---)
Intrinsic Semiconductors
• Intrinsic semiconductor : is one which is not doped. (Saf yarıiletken)
• One example is pure silicon.
• Generation –is the process of free electrons and holes being created.
• Recombination –is the process of free electrons and holes disappearing.
• In thermal equilibrium, generation and recombination rates are equal.(Isıl
denge, enerji alışverişi yoktur. )
Intrinsic Semiconductors
• In thermal equilibrium, the behavior below applies...
• = number of free electrons and holes / unit volume
• p= number of holes
• n= number of free electrons
• =  Eg
ni  5.2  10 T exp
15 3 / 2
electrons / cm 3
2kT

ni  1  1010 electrons / cm 3 at 300K


ni  1  1015 electrons / cm 3 at 600K
Doped Semiconductors
Doped Semiconductor

• The concentration of silicon atoms in the crystal is almost


1023/cm3
• In typical semiconductor devices, the concentration of impurity atoms
are in the range from 1015/cm3 to 1019/cm3 atoms.
• The fraction of impurity is very small, about 1 part in 106.
• The metallurgical properties of the crystal are not changed
perceptibly.
• However, the electrical properties of the crystal are greatly changed
by the impurity.
Doped Semiconductors

𝑡h𝑒𝑦 𝑤𝑖𝑙𝑙 𝑏𝑒 𝑒𝑞𝑢𝑎𝑙

⏞
(n ) ≈ ( 𝑁 )
𝐷

Number electrons in n-type Number donor atoms


n-type Semiconductors
Electroneutrality conditions

Donor atom ions

𝟐
𝟐 𝒏𝒊
𝒏 𝒊 =𝒏 . 𝒑 𝒑 =
𝑵𝑫
p-type Semiconductors

𝟐
𝒏𝒊
𝒏=
𝑵𝑨
Example
Comparison
Current Flow in Semiconductors

• There are two mechanisms by which holes and electrons move


through a crystal:

• Drift Current
• Diffusion Current
Drift Current
Drift current

• What type of charges are responsible for current flow in conductors?

• What type of charges are responsible for current flow in semiconductors?

• What is mobility µ?
• In solid-state physics, the electron mobility characterizes how quickly an electron
can move through a metal or semiconductor, when pulled by an electric field.
Drift Current
Drift current

Electrons move with velocity 2,5 times higher than holes

Drift velocity
Resistivity and Conductivity of a Semiconductor

For doped n type silicon,

1
ρ𝑛 =
𝑞 𝑁 𝐷 µ𝑛
Unit: Siemens/cm

For doped p type silicon,

1
ρ𝑝 =
𝑞 𝑁 𝐴 µ𝑝
Unit: Ohm-cm
Resistivity Dependence on Doping
Diffusion Current
Understanding mobility
Definition of Resistance

𝐿
𝑅= ρ
𝐴
Diffusion Current
Hole direction

Current direction

The hole density varies depending on the distance

Electron direction

Current direction

The electron density varies depending on the distance.


Einstein Relationship

𝑘𝑇
𝑉 𝑇=
Boltzman constant 𝑞
Charge of an electron
Diffusion Current
Total Current
Drift current
Drift current is caused by electric fields
Direction of the drift current is always in the direction of the electric field.

Obeys Ohm’s law:

Diffusion Current
Diffusion current is caused by variation in the carrier concentration
Direction of the diffusion current depends on the gradient of the carrier concentration

Obeys Fick’s law:


pn junction structure
Depletion Region

PN Junction Depletion Region


Diffusion

• There is a heavy concentration of holes in the p-type region and only a light
concentration of holes in the n-type region,
• Holes move to from p-type into the n-type region by diffusion and they disappear by
recombination very quicky.
pn Junction
pn Junction
Depletion region
Poission equations
2
𝑑 𝑉 𝑑𝐸 ρ
=− =−
𝑑𝑥
2
𝑑𝑥 ɛ
p-n junction
Depletion region should be neutral :

W
Width of Depletion Region

𝑁𝐷≫𝑁 𝐴 𝑤 ≈ 𝑥𝑝 ≈
√
2 ɛ 𝑟 ɛ 0𝑉 𝐵
𝑞𝑁𝐴
Distances of the depletion
region on the p side

𝑁 𝐴≫ 𝑁 𝐷 𝑤 ≈ 𝑥𝑛 ≈
√
2 ɛ𝑟 ɛ0 𝑉 𝐵
𝑞 𝑁𝐷
Distances of the depletion
region on the n side

w Total width of depletion region

If impurity density is less, the thickness of the depletion layer is greater.

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