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Formula Sheet Solid State Electronics

This document discusses key concepts in semiconductor physics including: 1) The density of states function which gives the number of quantum states per unit volume and energy and the Fermi-Dirac distribution which gives the probability of a state being occupied. 2) Intrinsic carrier concentration and the intrinsic Fermi level position in undoped semiconductors. 3) Ionization of dopants and the density of free carriers in n-type and p-type materials based on doping concentration and temperature. 4) Conditions for thermal equilibrium and expressions for carrier concentrations and Fermi levels in intrinsic, n-type and p-type materials.

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Vedant Sumaria
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987 views2 pages

Formula Sheet Solid State Electronics

This document discusses key concepts in semiconductor physics including: 1) The density of states function which gives the number of quantum states per unit volume and energy and the Fermi-Dirac distribution which gives the probability of a state being occupied. 2) Intrinsic carrier concentration and the intrinsic Fermi level position in undoped semiconductors. 3) Ionization of dopants and the density of free carriers in n-type and p-type materials based on doping concentration and temperature. 4) Conditions for thermal equilibrium and expressions for carrier concentrations and Fermi levels in intrinsic, n-type and p-type materials.

Uploaded by

Vedant Sumaria
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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,

, E = p2/2m,

Condition to find the constant in the equation:


Electron in Free space:
;

,
,

,
,

where

Tunneling Probability:

; Reflection Probability:

; Donor Binding energy:

(one electron atom);

Quantum no. n = 1, 2, 3 ; l = 0, 1 , 2 (n-1); m = -l . +l; Phase Velocity:


here; Effective mass:
system:

; Infinite Well:

; Finite Potential:

where

, Group Velocity:

and use

; Density of states of 3D system:

; Conduction band density of states:

; Density of states 2D
; Valence Band Density of States:

. The number densityN (E ) is the number of particles per unit volume per unit energy and the
functiong (E ) is the number of quantum states per unit volume per unit energy. The functionfF (E ) is called theFermiDirac
distribution or probability function and gives the probability that a quantum state at the energyE will be occupied by an electron.

The probability that a state is empty is:

; E-EF>> kT:

for electrons in conduction band from Ec to infinity.

for holes in valence band integrate from -infinity to Ev.


where

/()

; / () = ()/

,
orbital

The Intrinsic Fermi-Level Position

Where E is the ionization energy and (En/E0) = (m*/m0)*(0/ )2 * 1/n2 where E0 = 13.6 eV for Hydrogen. r=( / 0) = 16.

does not hold true:

; If Boltzman approximation

= Nd Nd+
; nd is the density of electrons occupying the donor level
and Ed is the energy of the donor level; Nd is the concentration of ionized donors; Nd is the concentration of donors; similar for np..

Ionization and freeze out:


;
(Ec-Ed) ionization energy of the donor electrons. This term is the relative number of electrons in the donor states compared with
total no. of electrons. Ratio of electrons in donor state to the total no. of electrons in conduction band+ donor state.

Thermal Equilibrium:

n0 / p0 = intrinsic carrier concentration; Nd/Na = total concentration (for n/p type high doped materials). (n0< ni p type; p0< ni)
; n0 = Nd Na;

- lattice;

; intrinsic mat.:

; p0 = Na Nd;

- Impurity;

;transit time = distance/Vdrift;

; total current:

;
;

;
;

;
;

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