1.7.

FERMI DIRAC DISTRIBUTION FUNCTION

The energy band divided to energy states, electrons can
occupy some of these. According to Pauli statement that,
there are many states are unoccupied by electrons and no
two electrons has the same energy in the same atom at the
same time. Now, what determine the probability that a
given energy state occupies by electron? The accurate
number of electrons dN having a value of energy in a given
range of energy state E+ E at absolute temperature can be
expressed by FERMI as:
𝑪 𝑬 𝒅𝑬
𝒅𝑵 = 𝑬−𝑬 𝑬𝒒. 𝟏 . 𝟖
𝑭 ൗ
𝒆 𝑲𝑻 +𝟏 1
Where the constant of proportionality C has the value:
𝟑ൗ
𝟒𝝅 𝟐 𝒎𝒆 𝟐
𝑪= = 𝟔. 𝟐𝟖 𝒙𝟏𝟎𝟐𝟕 𝒆𝒍𝒄𝒕𝒓𝒐𝒏𝒔൘ 𝟑ൗ 𝑬𝒒. 𝟏. 𝟗
𝒉𝟐 𝒎 /𝒆𝑽 𝟐
Where, (h) is the Plank’s constant, and
Ef is defined as the highest electronic energy at absolute
temperature.
At E = Ef, the probability of electron occupancy is 50%.
It is important to note that, at 0K all the charge carriers
frozen and lies in the lowest level of the energy gap.
In conduction band, there is large number of states has
small probability of occupation, there will be only a few
2
In contrast, there a large EC
number of states in Energy Gap

Energy Levels
valance band, most of
them occupied and the
EF
probability of occupation
is unity, so there will be
only a few unoccupied
energy states in valance EV
100% 50% 0
band. The FERMI DIRAC
ELECTRON OCCUPANCY
distribution function is Figure 1-18. Fermi Dirac Distribution
symmetrical around the Function
FERMI level, figure (1.18). 3
 If the number of energy states in conduction valance band
are the same. In addition, if the number of electrons in
conduction and valance band are the same. Then FERMI
level must be located in middle of the energy gap in case of
intrinsic material. So in intrinsic material n = p and E = Ef and
is noted as Efi. In N-Type, the concentration of electrons in
conduction band is greater than concentration of electrons
in intrinsic material, concentration of holes in conduction
band is equal to concentration of holes in intrinsic material.
It follows that, in N-Type, FERMI function shifted upward in
the energy band picture.

4
 N-Type P-Type
In contrast, in P-Type, FERMI
level and FERMI function will EC
both shifted downward in the ED
Ef
direction of valance band. The
FERMI level serves also as a EA
measure of electronic EF
EV
occupancy in material, and is
equal to, 0 0.5 1 0 0.5 1
𝟑ൗ
𝟑𝑵 𝟐 ELECTRON OCCUPANCY
𝑬𝒇 = Figure 1.19 Fermi Dirac Distribution
𝟐𝑪 Function in N & P-Type Materials
−𝟏𝟗 𝟑ൗ𝟐
= 𝟑. 𝟔𝟒 𝒙 𝟏𝟎 𝑵 𝑬𝒒. 𝟏. 𝟏𝟎
Where N is the number of
valance electrons/m3. 5
 1.7.1. FERMI LEVELS AND CARRIERS DENSITY
The electrical properties of a material depend on
presence or absence of electrons in particular energy level.
FERMI statistics used to determine the distribution of
electrons in any particular energy level. The probability
f(E) can be determined by,
𝟏
𝒇(𝑬) = 𝑬−𝑬𝑭 ൗ
𝑬𝒒. 𝟏 . 𝟏𝟏
𝟏+ 𝒆 𝑲𝑻
It should be noted that if E = Ef , then f(E) = 1/2, so that
there is 50% chance that an energy state is filled by
electron. Figure (1-20) shows the electrons occupancy as
function for temperature.
6
The probability of occupancy increased as the temperature
increased and decreased as the temperature decreased. At
absolute zero, probability is zero that any level above FERMI
be filled, and probability is unity that any level below
FERMI will be filled. When we apply this distribution at RT
to intrinsic Si which has energy gap 1.1 eV, the energy
difference between the two energy states Ec- Ef = 0.55 eV, or
about 21 KT (KT = 0.026 eV), in this case E-Ef is so large
compared to KT, and Eq.1.11 becomes:
𝑬− 𝑬𝑭 ൗ
𝒇 𝑬 = 𝒆− 𝑲𝑻 𝑬𝒒. 𝟏. 𝟏𝟐
7
 𝟏−𝒇 𝑬
𝟏 EC
= 𝐸𝐹 − 𝐸 ൗ
− T=1000 oK
𝟏+𝑒 𝐾𝑇 T=0 oK Ef
𝑬𝒒. 𝟏 𝟏𝟑

Eq.1.13 simplified to: EV

𝟏−𝒇 𝑬
𝐸𝐹 − 𝐸 ൗ
− 0 0.5 1 0 0.5 1
= 𝑒 𝐾𝑇 𝑬𝒒. 𝟏 𝟏𝟒 ELECTRON CCUPANCY f(E)
Fig.1.20 FERMI Distribution as Function with Temperature

Eq.1.12 and Eq. 1.14 are used to determine the density of

free electrons n and the density of free holes p in the
semiconductor material.
8
If the density of states in which electrons or holes can
occupy known, and the probability of occupancy known,
the number of free carriers can have determined.
Let N(E) is the number of states/eV/m3 of the crystal, then
the density of states in an energy range E1 to E2 is given by:
𝑬𝟐
𝑺 = න 𝑵 𝑬 𝒅𝑬 𝑬𝒒. 𝟏. 𝟏𝟓
𝑬𝟏
Number of electrons is the product of states and the
probability of occupancy, so:
𝑬𝑪𝑻
𝒏= න 𝒇 𝑬 𝑵 𝑬 𝒅𝑬 𝑬𝒒. 𝟏 𝟏𝟔
𝑬𝑪𝑩
9
Gives: the density of free electrons (n)
𝑬𝒄 −𝑬𝒇 ൘
𝒏 = 𝑵𝒄 𝒆 − 𝑲𝑻 𝑬𝒒. 𝟏. 𝟏𝟕
Where Nc is the effective density of states in the conduction band
and equal?
𝟑ൗ
𝟐 𝒎𝒆 𝑲𝑻 𝟐
𝑵𝒄 = 𝟐
𝑬𝒒. 𝟏. 𝟏𝟖
𝒉
In addition, the density of free holes p given by:
𝑬𝒇 −𝑬𝒗 ൘
𝒑= 𝑵𝒗 𝒆− 𝑲𝑻 𝑬𝒒. 𝟏. 𝟏𝟗
Where Nv is the effective density of states in the valance band
and it is equal:
𝟑ൗ
𝟐 𝒎𝒑 𝑲𝑻 𝟐
𝑵𝒗 = 𝟐
𝑬𝒒. 𝟏. 𝟐𝟎
𝒉
10
Where, Nc = Nv only, if the effective masses of electrons
and holes are equal, from Eq.1.17 and Eq.1.19, we can
calculate the concentration of equilibrium value of free
carriers np,
− 𝑬𝒄−𝑬𝒗 ൗ𝑲𝑻
𝒏 𝒑 = 𝑵𝒄 𝑵 𝑬𝑮𝒗 𝒆 =
− ൗ𝑲𝑻
𝑵𝒄 𝑵𝒗 𝒆 𝑬𝒒. 𝟏. 𝟐𝟏
As the energy gap Eg decreases linearly with temperature,
so Eg = Ego - , and Eq.1.21 becomes:
𝟑ൗ 𝒏𝒑=
𝒎 𝒎 𝑬𝑮𝒐
𝟒𝟑 𝒆 𝒑 𝟐 𝟑 − ൗ𝑲𝑻 𝜷ൗ𝑲
𝟐. 𝟑𝟑 𝒙 𝟏𝟎 𝟐 𝑻 𝒆 𝒆 𝑬𝒒. 𝟏. 𝟐𝟐
𝒎
Where Ego is the energy gap at 0 K,  is the variation of Eg
with temperature. For Si, the equilibrium concentration of
intrinsic carriers given by:
11
 𝟒𝟒 𝟑 − 𝟏.𝟐𝟏 ൗ𝑲𝑻
𝒏 𝒑 = 𝟏𝟓 𝒙 𝟏𝟎 𝑻 𝒆 𝑬𝒒. 𝟏. 𝟐𝟑
For intrinsic material where n = p , so the intrinsic
concentration is :
𝟐
𝒏𝒊 = 𝒏 𝒑 𝑬𝒒. 𝟏. 𝟐𝟒
In addition, this known as electrical neutrality law.
Equations 1.17 and 1.19 for determine electrons and holes
concentrations can be applied to both intrinsic and extrinsic
materials, wherein intrinsic n = p. So:
𝑬𝒄 −𝑬𝒇 ൘ 𝑬𝒇 −𝑬𝒗 ൘
− −
𝑵𝒄 𝒆 𝑲𝑻 = 𝑵𝒗 𝒆 𝑲𝑻 𝑬𝒒. 𝟏. 𝟐𝟓

12
By taking the logarithm of both sides of the
equation above,
𝑵𝒄 𝑬𝒄 + 𝑬𝒗 −𝟐𝑬𝒇
𝒍𝒏 = From which;
𝑵𝒗 𝑲𝑻
𝑬𝒇
𝑬𝒄 + 𝑬𝒗 𝑲𝑻 𝑵𝒄
= − 𝒍𝒏 𝑬𝒒. 𝟏. 𝟐𝟔
𝟐 𝒒 𝑵𝒗
If Nc = Nv at mp = mn, Eq.1,26 will be
simplified to:
𝑬𝒄 + 𝑬 𝒗
𝑬𝒇 = 𝑬𝒒. 𝟏. 𝟐𝟕
𝟐 13
 Solved Examples
Problem (18) Example (19)
A silicon wafer contains 1016 cm-3 electrons. Calculate The electron density in silicon at room temperature
the hole density and the position of the intrinsic is twice the intrinsic density. Calculate the hole
energy and the Fermi energy at 300 K. Draw the density, the donor density and the Fermi energy
corresponding band diagram to scale, indicating the relative to the intrinsic energy. Repeat for n = 5 ni
conduction and valence band edge, the intrinsic and n = 10 ni. Also repeat for p = 2 ni, p = 5 ni and p
energy level and the Fermi energy level. Use ni = 1010 = 10 ni, calculating the electron and acceptor
cm-3. density as well as the Fermi energy relative to the
Solution: intrinsic energy level.
Solution:
The hole density is obtained using the mass
action law: The hole density is obtained using the
𝒏𝟐𝒊 𝟏𝟎𝟐𝟎 𝟒 𝒄𝒎−𝟑
mass action law: p = ni2/n
𝒑= = = 𝟏𝟎
𝒏 𝟏𝟎𝟏𝟔 The doping density obtained by requiring
The position of the intrinsic energy relative charge neutrality Nd - Na = n - p
to the mid gap energy equals:
∗ The Fermi energy obtained from:
𝑬𝒄 + 𝑬𝒗 𝟑 𝒎𝒉 𝟑 𝟎. 𝟖𝟏
𝑬𝒊 − = − 𝑲𝑻 𝒍𝒏 ∗ = 𝒙 𝟎. 𝟎𝟐𝟓𝟖 𝒍𝒏 EF - Ei = kT ln(n/ni) Yielding:
𝟐 𝟒 𝒎𝒆 𝟒 𝟏. 𝟎𝟖
= 𝟓. 𝟓𝟖 𝒎𝒆𝑽 n = 2 ni n = 5 ni n = 10 ni
The position of the Fermi energy relative to p ni /2 ni /5 ni /10
the intrinsic energy equals: Nd - Na 1.5 ni 4.8 ni 9.9 ni
𝑵𝒅 𝟏𝟎𝟏𝟔 EF - Ei kT ln(2) kT ln(5) kT ln(10)
𝑬𝑭 − 𝑬𝒊 = 𝑲𝑻 𝒍𝒏 = 𝟎. 𝟎𝟐𝟓𝟖 𝒍𝒏 = 𝟑𝟓𝟕 𝒎𝒆𝑽 p = 2 ni p = 5 ni p = 10 ni
𝒏𝒊 𝟏𝟎𝟏𝟎 n ni /2 ni /5 ni /10
Nd - Na -1.5 ni -4.8 ni -9.9 ni 14
 n-type p-type
1.8 EXTRINSIC MATERIALS
EC
In such material, electron ED
concentration is not equal to EA

hole concentration . EV

In the case of n-type (n > p),

Figure 1-21 Energy Band Representation for
where the conduction occurred Extrinsic Material (a) N-Type (b) P- Type
by electrons in conduction
band and Fermi level is shifted
upward in the direction of
conduction band, and a new
level named donor level, ED,
exists. 15
If (p>n), results p-type material, conduction occurred by
holes in valance band and a new level acceptor level, EA,
exists. By adding only one atom from doping material to Si
or Ge atoms, the energy required to ionization is 0.01eV
for Ge, and 0.05eV for Si and the conductivity is increased
by factor of 12. In n-type, number of electrons increased
also number of holes decreased below, which was
available in intrinsic. Large number of electrons presents
due to donor’s increases the rate of recombination of
electrons with holes, and the same said in case of p-type.
For both cases, electrons in n-type and holes in p-type
called majorities and the other charges called minorities 16
1.8.1. CONCENTRATION OF CHARGE CARRIERS IN
EXTRINSIC SEMECONDUCTORS
The probability that electrons occupy a donor level can be
determined:
𝑵𝑫 − 𝑵+
𝑫
+
𝑵𝑫
𝒇 𝑫 = =𝟏− 𝑬𝒒. 𝟏. 𝟐𝟖
𝑵𝑫 𝑵𝑫
The probability that electrons occupy an acceptor level
given by:
−
𝑵𝑨
𝒇 𝑨 = 𝑬𝒒. 𝟏. 𝟐𝟗
𝑵𝑨
Where, ND and NA are the donor and acceptor levels ND+,
and NA- are the ionized donors and acceptor levels. 17
The concentration of ionized charges can be determined
through the probabilities in Fermi distribution function and
gives,
+ 𝑵𝑫
𝑵𝑫 = 𝑬𝒒. 𝟏. 𝟑𝟎
𝑬𝒇 − 𝑬𝑫
൘
𝒈𝒙𝒆 𝑲𝑻+𝟏
+ 𝑵𝑨
𝑵𝑨 = 𝑬𝒒. 𝟏. 𝟑𝟏
𝑬𝑨 − 𝑬𝒇
൘
𝒈𝒙𝒆 𝑲𝑻+𝟏
The constant (g) characterizes the structure of levels and
equal 1/2. The concentration of electrons in C.B and
concentration of holes in V.B is given by:
𝑵 + 𝑵− 𝑨 = 𝑷 + 𝑵 +
𝑫 𝑬𝒒. 𝟏. 𝟑𝟐
18
If NA- = ND+ we have extrinsic material have the same
properties of intrinsic. By substituting in Eq.1 .32, we have:
Τ
𝑬𝒄 −𝑬𝒇 𝑲𝑻 𝑵𝑫 − 𝑬𝑨 −𝑬𝒇 Τ𝑲𝑻
𝑵𝒄 𝒆 + 𝒆
𝒈
𝑬𝒇 −𝑬𝒗 Τ𝑲𝑻 𝑵𝑫 − 𝑬 −𝑬 Τ𝑲𝑻
= 𝑵𝒗 𝒆 + 𝒆 𝒇 𝑫 𝑬𝒒. 𝟏. 𝟑𝟑
𝒈
We supposed that (EA-EF) / kT >1; and (EF- ED) / KT>1. The
solution of Eq.1 .33 is somewhat complicated, for this, we
simplify it for both conduction types as follows:

19
N-Type Material
Where ND>NA and p < n, Equation 1.32 simplified to
(Eq.1.34), n = ND, then:
− 𝑬𝒄 −𝑬𝒇 Τ𝑲𝑻 𝑵𝑫 − 𝑬 −𝑬 Τ𝑲𝑻
𝑵𝒄 𝒆 = 𝒆 𝒇 𝑫 𝑬𝒒. 𝟏. 𝟑𝟒
𝒈
𝑵𝒄 − 𝟐𝑬𝒇 −𝑬𝑫 − 𝑬𝑪 Τ𝑲𝑻
Or: = 𝒆 From which
𝑵𝑫/ 𝒈
𝑬𝑫 + 𝑬𝒄 𝑲𝑻
𝑬𝒇 = − 𝒍𝒐𝒈−𝒈 𝑵𝑪 Τ𝑵𝑫 𝑬𝒒. 𝟏. 𝟑𝟓
𝟐 𝟐
𝑬𝑫 + 𝑬𝒄
If T 0, then: 𝑬𝒇 = 𝑬𝒒. 𝟏. 𝟑𝟔
𝟐

20
By substituting Eq.1.35 in Eq.1.17, we can get the
concentration of electrons in n-type material.
𝐧 = 𝐍𝐜 𝐞− 𝐄𝐜 −𝐄𝐟Τ𝐊𝐓
𝑲𝑻 𝒈 𝑵𝒄
− 𝑬𝒄 − 𝐄𝐜 +𝐄𝐃 ൗ𝟐+ 𝒍𝒐𝒈 /𝑲𝑻
𝐧 = 𝐍𝐜 𝐞 𝟐 𝑵𝑫
𝑵𝑪 𝑬𝑫 −𝑬𝑪 Τ𝟐𝑲𝑻
𝒏= 𝒆
𝒈 𝑵𝑪
𝑵𝑫
𝑵𝑫 𝑵𝑪 − ∆ 𝑬𝑫 Τ𝟐𝑲𝑻
= 𝒆 𝑬𝒒. 𝟏. 𝟑𝟕
𝒈
21
 P-Type Materials
Where NA> ND and n < p, Eq.1.32 becomes,
P = NA- Eq.1.38
As we have calculated for p-type:
𝑬𝑽 + 𝑬𝒄 𝑲𝑻
𝑬𝒇 = − 𝒍𝒐𝒈 𝒆𝒈 𝑵𝒗 Τ𝑵𝑨 𝑬𝒒. 𝟏. 𝟑𝟗
𝟐 𝟐
If T 0, then: The concentration of holes in p-type is,
𝑬𝑽 + 𝑬𝑨
𝑬𝒇 = 𝑬𝒒. 𝟏. 𝟒𝟎
𝟐
𝑵𝑨 𝑵𝑽 − ∆ 𝑬 Τ𝟐𝑲𝑻
𝒑= 𝒆 𝑨 𝑬𝒒. 𝟏. 𝟒𝟏
𝒈
22
Finally, as we have deduced before in (Eq.1.24),
ni2 =np , n the n-type is majority and it can be written
as nn and p is minority and it can be written as pn, so
we can write (Eq.1 .24) as: ni2=nn pn Eq.1.42
𝟐 𝟐
𝒏𝒊 𝒏𝒊
𝒑𝒏 = = 𝑬𝒒. 𝟏. 𝟒𝟑
𝒏𝒏 𝑵𝑫
For p-type, p is majority and it written as pp, and
electrons are minority and it written as np, so we can
write (Eq.1.24) for p-type as: ni2= pp np Eq.1.44
𝒏𝟐𝒊 𝒏𝟐𝒊
𝒏𝒑 = = 𝑬𝒒. 𝟏. 𝟒𝟓
𝑷𝒑 𝑵𝑨 23
 Figure 1.22 Effect of Temperature on Fermi Level
1.8.2. FERMI LEVEL IN
EXTRINSIC MATERIAL EC
ED
The only parameters which
changes in equations 1.17 and Ef
1.19 which determine
EA
concentrations of n and p when EV
dopant is added is the Fermi Temperature inT (oK)

energy level Ef which depends on temperature and doping

concentrations. If n dopant added to intrinsic material; at a
given temperature T all ND atoms are ionized, and first ND
states in C.B will be filled.
24
Since Ef is a measure of the probability of occupancy. Ef move
closer to C.B to indicate that many energy States in this band
filled by donor electrons, as shown in figure 1.21. The same
situation leads Ef to move closer to V.B for p-type material. lf
T increases, all donor atoms are ionized and the
concentration of thermally generated electrons in C.B
becomes much larger than the concentration of donor
electrons. Under this condition, the concentration of holes
(p) and electrons (n) become almost equal and the crystal
becomes intrinsic as in figure (1-22). We can conclude that as
the temperature of the extrinsic material increases Ef moves
toward the center of the energy gap.

25
The exact position of Ef in n-type known if we substitute
n = ND and Eq.1.17 becomes:
− 𝐄𝐂 − 𝐄𝐟 Τ𝐊𝐓
𝐍𝐃 = 𝐍𝐂 𝐞 𝐄𝐪. 𝟏. 𝟒𝟔 , And,
𝐍𝐂
𝐄𝐟 = 𝐄𝐂 − 𝐊𝐓 𝐥𝐧 𝐟𝐨𝐫 𝐧 − 𝐭𝐲𝐩𝐞 𝐄𝐪. 𝟏. 𝟒𝟕
𝐍𝐃
𝐍𝐯
𝐄𝐟 = 𝐄𝐕 − 𝐊𝐓 𝐥𝐧 𝐟𝐨𝐫 𝐩 − 𝐭𝐲𝐩𝐞 𝐄𝐪. 𝟏. 𝟒𝟖
𝐍𝐀
Note that if NA = ND, the last two equations are added
together, yields:
𝐄𝐂 + 𝐄𝐯 𝐊𝐓 𝐍𝐂
𝐄𝐟 = − 𝐥𝐧 𝐄𝐪. 𝟏. 𝟒𝟗
𝟐 𝟐 𝐍𝐯
26
 Solved Examples
Example (24) Example (26)
A piece of silicon has a resistivity which is specified by Silicon crystal is doped with 5 x 1020/m3
the manufacturer to be between 2 and 5 Ohm cm. atoms per m3 . The donor level is 0.05 eV
Assuming that the mobility of electrons is 1400 cm2/V-
sec and that of holes is 450 cm2/V-sec, what is the from the edge of the conduction band.
minimum possible carrier density and what is the Taking the band gap to be 1.12 eV, calculate
corresponding carrier type? Repeat for the maximum the position of the Fermi level at 200 K.
possible carrier density.
Solution
Solution
The intrinsic carrier concentration obtained
The minimum carrier density obtained for the highest from the known carrier concentration in Si at
resistivity and the material with the highest carrier 300 K. As the carrier concentration at 300K is
mobility, i.e. the n-type silicon. The minimum carrier
density therefore equals: 1.5x1016/m3, the carrier concentration at 200
𝟏 𝟏 K is
𝒏= = 𝟑ൗ
𝒒 𝝁𝒏 𝝆𝒎𝒂𝒙 𝟏. 𝟔 𝒙 𝟏𝟎 −𝟏𝟗 𝒙 𝟏𝟒𝟎𝟎𝒙 𝟓 𝟐𝟎𝟎 𝟐
= 𝟖. 𝟗𝟐 𝒙 𝟏𝟎𝟏𝟒 𝒄𝒎−𝟑 𝒙 𝟏. 𝟓 𝒙 𝟏𝟎𝟏𝟔 = 𝟎. 𝟖𝟐 𝒙 𝟏𝟎𝟏𝟔 /𝐦𝟑
𝟑𝟎𝟎
The maximum carrier density obtained for the
lowest resistivity and the material with the As the doping concentration is much larger
lowest carrier mobility, i.e. the p-type silicon. than (ni). we can take,
The maximum carrier density therefore equals: 𝒏 ≈ 𝑵𝑫 = 𝟓 𝒙 𝟏𝟎𝟐𝟎 /𝒎𝟑 , 𝒕𝒉𝒖𝒔
𝟏 𝟏 𝑬𝒏
− 𝑬𝒊 𝒏
𝒑= = 𝑭 𝑭 = 𝑲𝑻 𝒍𝒏 ൗ𝒏𝒊 = 𝟎. 𝟏𝟖𝟑 𝒆𝑽
𝒒 𝝁𝒑 𝝆𝒎𝒂𝒙 𝟏. 𝟔 𝒙 𝟏𝟎−𝟏𝟗 𝒙 𝟒𝟓𝟎𝒙 𝟐
= 𝟔. 𝟗𝟒 𝒙 𝟏𝟎𝟏𝟓 𝒄𝒎−𝟑
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