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6 Electronic Noise

1) The document discusses various types and properties of electronic noise in circuits, including thermal noise, flicker noise, and white noise. 2) It explains how to characterize noise through its average power, power spectral density, and input-referred noise voltage. Common sources of noise like thermal noise in resistors and MOSFETs are analyzed. 3) The document provides techniques for noise analysis in different circuit configurations like common-source, common-gate, and common-drain stages. Low-noise design considerations aim to maximize transconductance and device area.

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Sornagopal Vijayaraghavan
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99 views26 pages

6 Electronic Noise

1) The document discusses various types and properties of electronic noise in circuits, including thermal noise, flicker noise, and white noise. 2) It explains how to characterize noise through its average power, power spectral density, and input-referred noise voltage. Common sources of noise like thermal noise in resistors and MOSFETs are analyzed. 3) The document provides techniques for noise analysis in different circuit configurations like common-source, common-gate, and common-drain stages. Low-noise design considerations aim to maximize transconductance and device area.

Uploaded by

Sornagopal Vijayaraghavan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 26

Incheon National University

Analog Integrated
Circuit Design

ELECTRONIC NOISE

Noise Statistical Characteristics


Types of Noise
device electronic noise :
thermal noise flicker noise
environmental noise :
through power lines or substrate
Noise
limits the minimum signal level
a random process
the value of noise cannot be
predicted at any time even if
the past values are known
How can we incorporate noise in circuit analysis?
statistical characteristics
Which properties of noise can be predicted?
average power
most noise sources in circuits exhibit a constant average power

Incheon National University

Chong-Gun Yu

Average Noise Power


Average power of a periodic signal
average power delivered by a periodic voltage v(t) to RL
1
Pav
T

v 2 (t )
T/ 2 RL dt
T/ 2

Average power of a random signal x(t)


1
Pav lim
T T

x 2 (t )
T/ 2 RL dt
T/ 2

Definition of Pav for simple calculation


1
T T

Pav lim

T/ 2

T/ 2

x 2 (t )dt

expressed in V2 rather than W


actual power delivered to RL : Pav/RL
root-mean-square (rms) voltage : Pav
Incheon National University

Chong-Gun Yu

Noise Spectrum
Power Spectral Density (PSD)
: shows how much power the signal carries at each frequency
the PSD, Sx(f), of a noise waveform x(t)
the Pav carried by x(t)
in a 1-Hz bandwidth around f
predictable for most of the noise
source of interest
expressed in V2/Hz rather than W/Hz
it is common to take a square root
of Sx(f) V/Hz
Ex) input noise voltage of an amp
at 100MHz = 3nV/ Hz
the Pav in a 1-Hz BW
at 100MHz = (3x10-9)2V2

Incheon National University

Chong-Gun Yu

Noise Spectrum
White noise
a common noise type
has white spectrum

ideal white noise does not exist infinite total power


noise spectrum that is flat in the band of interest is called white

Incheon National University

Chong-Gun Yu

Noise Spectrum
Theorem
In a linear time-invariant system with transfer function H(s)
S y ( f ) S x ( f ) | H ( f ) |2

Sx(f) : input spectrum or PSD


Sy(f) : output spectrum
H(f) = H(s)|s=j2f

Noise shaping

Spectral shaping

Incheon National University

Chong-Gun Yu

Correlated and Uncorrelated Sources


Superposition can be used for deterministic signals
Superposition for random signals?
total average power of two noise waveforms

the third term :


correlation between x1(t) and x2(t)
superposition holds for the power of
uncorrelated noise sources
ex) generated by independent devices
Incheon National University

Chong-Gun Yu

Resistor Thermal Noise


Random motion of electrons voltage fluctuations
Spectrum of the thermal noise

Sv ( f ) 4kTR,

f 0

Sv(f) is white (up to 100THz) and expressed in V2/Hz and f


k = 1.38x10-23J/K ; Boltzmann constant
T ; temperature

Incheon National University

Chong-Gun Yu

Resistor Thermal Noise


total average noise power
Vn2 4kTR f ; (V 2 )

I n2 4kTG f ; (I 2 )

noise power density


Vn2
4kTR; (V 2 /Hz)
f

I n2
4kTG; (I 2 /Hz)
f

total r.m.s. noise voltage


Vn2 4kTR f ; (V)

r.m.s. noise voltage density


Vn2
f

4kTR ; (V/ Hz )

Incheon National University

Chong-Gun Yu

kT/C Noise
Total noise power in Vout ?

transfer function

output noise spectrum


2

Vout
1
( s)
VR
RCs 1

total output noise power

V
4kTR
Sout ( s) S R ( s) out ( j )
VR
4 2 R 2C 2 f 2 1

kT/C noise R
R (noise per unit BW) & BW
kT/C : constant
C=1pF total noise voltage
kT / C 64.3Vrms

Incheon National University

10

Chong-Gun Yu

Thermal Noise of a MOSFET


For a long-channel MOSFET in saturation
8
I n2 4kTg m kTgm (A 2 /Hz)
3

2/3 for long-channel trs., larger value for submicron MOSFETs


Example; maximum noise voltage that a single MOSFET can generate?
Max output noise occurs if the load is
an ideal current source

8
Vn2 I n2 ro2 kTgm ro2 (V 2 /Hz)
3

Incheon National University

11

Chong-Gun Yu

Flicker Noise
Extra energy states between Si & SiO2
randomly trap and release the carriers at the interface

Flicker noise model


Vn2

K
1

(V 2 /Hz)
CoxWL f

K : a process parameter (Flicker noise coefficient) on the order of 10-25V2F


1/f 1/f noise ; dominant at low frequency
large WL for low 1/f noise
1/f noise of PMOS < 1/f noise of NMOS
Incheon National University

12

Chong-Gun Yu

Corner Frequency
intersection point of 1/f noise and thermal noise

K
8
1
kTgm
g m2
3
CoxWL f

Incheon National University

13

fC

K 3g m
CoxWL 8kT

Chong-Gun Yu

MOSFET Noise Example


Example
For an NMOS current source, calculate the total thermal and 1/f noise
in the drain current for a band from 1kHz to 1MHz
total thermal noise
8
8
8
I n2,th,tot kTgm f kTgm (106 103 ) kTgm 106 (A 2 )
3
3
3

1/f noise spectrum


I n2,1/ f Vn2,1/ f g m

K
1
g m2 (A 2 /Hz)
CoxWL f

total 1/f noise


I

2
n ,1/ f ,tot

1MHz

1kHz

2
n ,1/ f

Kg m2 1MHz 1
Kg m2
Kg m2
3
df
df
ln(10 ) 6.91
(A 2 )

CoxWL 1kHz f
CoxWL
CoxWL

Incheon National University

14

Chong-Gun Yu

Input-Referred Noise
Input-referred noise
output-referred noise does not allow a fair comparison due to different
voltage gains

Vn2,out Av2Vn2,in

Incheon National University

Av : voltage gain

15

Chong-Gun Yu

Input-Referred Noise
Example: input-referred noise voltage?

Incheon National University

16

Chong-Gun Yu

Representation of Noise
Representation of noise by voltage and current source

Vn2,in and I n2,in are necessary and sufficient to represent the noise of
any linear two-port circuits
this model is valid for any source impedance and any input impedance

Incheon National University

17

Chong-Gun Yu

Representation of Noise
How do we calculate Vn2,in and I n2,in

(a) Z s Z in (input : shorted)


I n2,in has no effect
(b) Z s (input : open)
Vn2,in has no effect

(1) Z s Z in : only Vn2,in can be used


(2) Z s Z in : only I n2,in can be used
(3) otherwise, both Vn2,in and I n2,in should be used

Incheon National University

18

Chong-Gun Yu

Representation of Noise
Example (excluding 1/f noise)

4kT 8

(a) Vn2,out
kTgm RD2
RD 3

(b) Vn2,out

1 2 2
g m RD
I n2,in
C

in

Incheon National University

19

Vn2,in

4kT 8kT

2
g m RD 3g m

I n2,in Cin

4kT 2
1

m
g m2 3
RD

Chong-Gun Yu

Lemma
the noise source can be transformed from a drain-source current I n2 to
a gate series voltage Vn2 for arbitrary Z S at low frequencies

I n2
V 2
gm
2
n

or

I n2 Vn2 g m2

In
Z S ( g m 1 / ro ) 1
g mVn
I n ,out2
Z S ( g m 1 / ro ) 1
I
Vn n
gm
I n ,out1

Incheon National University

20

Chong-Gun Yu

Noise of Common-Source Stage


Zin is very high at low frequency & even at relatively high frequency
I n2,in can be neglected for moderate ZS
2
1
K 1

Vn2,in 4kT
2
3g m g m RD CoxWL f

How can we reduce the input-referred noise voltage?

(a) gm must be maximized if used as an amplifier


(b) gm must be minimized if used as a current source
Incheon National University

21

Chong-Gun Yu

Noise of Common-Source Stage


How do we design a CS stage for low-noise operation?

For thermal noise


increase gm1 by ID or W
ID power dissipation & output voltage swing
W parasitic capacitance
increase RD voltage headroom & speed
For 1/f noise
increase WL while W/L remains constant
gm & the thermal noise do not change
device capacitances

Incheon National University

22

Chong-Gun Yu

Noise of Common-Source Stage


Example
Calculate the input-referred thermal noise voltage

gm2 must be minimized M2 serves as a current source

Incheon National University

23

Chong-Gun Yu

Noise of Common-Gate Stage


Zin is low
I n2,in cannot be neglected
even at low frequency

2
4kT 2
RD
(a) Vn2,out 4kT g m
3
R
D

(b) Vn2,out Vn2,in ( g m g mb ) 2 RD2


2
1
g m

3
R
D

4kT 2
RD 4kTRD
(c) I n1 I D1 0 Vn2,out
RD
Vn2,in

4kT
( g m g mb ) 2

(b) Vn2,out I n2,in RD2


4kT
I n2,in
I n2, RD
RD

directly refer the noise current produced by the load to the input
Incheon National University

24

Chong-Gun Yu

Noise of Common-Drain Stage


Zin is very high at low frequency

I n2,in cannot be neglected

same as that of the CS stage


add noise to the input signal while providing a
voltage gain less than unity
usually avoided in low-noise amplification

Incheon National University

25

Chong-Gun Yu

Noise in Differential Pairs


Zin is very high at low frequency

Incheon National University

I n2,in cannot be neglected

26

Chong-Gun Yu

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