Scribd
Upload
1K views3 pages

MOSFET Energy Band

MOS capacitor is an equilibrium device where the Fermi level of the metal and semiconductor are at the same level when no external voltage is applied. When voltage is applied, the device behaves according to the applied voltage relative to the flat band voltage and threshold voltage. The flat band voltage is defined as the work function difference between the gate metal and semiconductor when no charge is present at the oxide-semiconductor interface. The threshold voltage is the minimum gate-to-source voltage required to induce a conducting channel, which can be in one of three states: accumulation, depletion, or inversion depending on the applied voltage level.

Uploaded by

Raghu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as RTF, PDF, TXT or read online on Scribd
1K views3 pages

MOSFET Energy Band

MOS capacitor is an equilibrium device where the Fermi level of the metal and semiconductor are at the same level when no external voltage is applied. When voltage is applied, the device behaves according to the applied voltage relative to the flat band voltage and threshold voltage. The flat band voltage is defined as the work function difference between the gate metal and semiconductor when no charge is present at the oxide-semiconductor interface. The threshold voltage is the minimum gate-to-source voltage required to induce a conducting channel, which can be in one of three states: accumulation, depletion, or inversion depending on the applied voltage level.

Uploaded by

Raghu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as RTF, PDF, TXT or read online on Scribd
You are on page 1/ 3

MOS capacitor is an equilibrium device i.e.

when the external voltage is not


applied to the device the Fermi level of metal and semiconductor are at same
level.
When external voltage is applied to device it behaves according to the
voltage applied with respect to flat band voltage and threshold voltage.
Flat band voltage is defined as a work function difference between the gate
metal and the semiconductor when no charge is present in oxidesemiconductor interface.
Threshold voltage is defined as the minimum gate-to-source voltage required
to induce or create a conducting channel. This can be divided into three types
1. Accumulation layer:
In this case, applied voltage Vg is less than flat band voltage. Voltage applied
to gate(on metal side) is negative

Fig1 energy band diagram and MOSFET internal charge distribution in


accumulation region
Where
Ec= conduction band energy level
Ef= Fermi energy level
Ev = valance band energy level
Ei= intrinsic energy level
Q = charge of electron
VgVg=voltage applied on gate
s=surface voltage
When voltage is applied, mosfet no longer remain in equilibrium condition.
The Fermi energy level of metal changes by charge of electron multiplied by
applied voltage. Voltage applied is negative and hence rise in Fermi level of
metal takes place while Fermi level of semiconductor remain constant
Voltage applied to the gate is negative hence negative charge develops near
metal-oxide junction thus positively charged hole travel towards the oxide
junction thus creating positive charge near the oxide-semiconductor junction.
Due to accumulation of positive charge, surface voltage is developed near
oxide-semiconductor junction .Due to this, energy band bending takes place

and the value is charge of electron multiplied by surface voltage.


Energy band bending is changes in energy offset (level) of semiconductors
band structure near junction due to space charge.
2. Depletion layer:

Fig2 energy band diagram and MOSFET internal charge distribution in


depletion region
In depletion region, voltage applied to gate is greater than flat band voltage
and less than threshold voltage.
In this case, voltage applied to gate is positive hence there is fall in Fermi
energy level of metal while rise in Fermi energy level of semiconductor.
Since voltage applied to positive and hence positive charge develops near
metal-oxide junction thus the electrons travel towards the gate creating
negative charge near oxide-semiconductor junction.
Electrons recombine with holes present near oxide creating depletion region.
Surface voltage develops in depletion region and effect of this we have
energy band bending in depletion region.
3. Inversion layer:
In inversion layer, applied voltage is greater than threshold voltage.
The reason it is called as inversion layer as the surface is inverted from ptype to n-type near the junction.
Voltage applied is very high hence Fermi level of metal goes down further
Since voltage applied is positive to gate, electrons travel towards the gate
and accumulates near semiconductor-oxide junction resulting development of
surface potential. Due to surface potential energy band bending takes place.
From the diagram p type substrate near semiconductor-oxide junction has
intrinsic energy level below Fermi energy level and this part of substrate
behave as n-type semiconductor and part above the Fermi level behave as p-

type semiconductor. This happen due to concentration of electrons exceeds


concentration of holes near semiconductor-oxide junction and the event is
called as surface inversion.
N-type semiconductor acts as a channel for current and current can flow
through this channel on application of positive drain-source voltage.

Fig3 energy band diagram and MOSFET internal charge distribution in


inversion region

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy