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EEE1106 Course Structure

This course provides a basic study of electrical circuit analysis and the operation of diodes, BJTs, JFETs, and MOSFETs. The course involves 2 hours of lectures, 1 hour of tutorials, and 3 hours of laboratory work per week. Students will learn to analyze DC and AC circuits using Kirchhoff's laws and Thevenin's theorem, and analyze the operation of diodes, transistors, and field-effect transistors. Student evaluation involves tests, labs, assignments, and a final exam.

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132 views2 pages

EEE1106 Course Structure

This course provides a basic study of electrical circuit analysis and the operation of diodes, BJTs, JFETs, and MOSFETs. The course involves 2 hours of lectures, 1 hour of tutorials, and 3 hours of laboratory work per week. Students will learn to analyze DC and AC circuits using Kirchhoff's laws and Thevenin's theorem, and analyze the operation of diodes, transistors, and field-effect transistors. Student evaluation involves tests, labs, assignments, and a final exam.

Uploaded by

Kavinesh Ananthan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INTI INTERNATIONAL UNIVERSITY

COURSE STRUCTURE

COURSE: EEE1106 CIRCUIT THEORY (4 cr)

PREREQUISITE(S):
PHY1121 Physics

COURSE DESCRIPTION:
This course provides a basic study on electrical circuit analysis, and the basis operation of the following
electronic devices: diode, BJT, JFET, and MOSFET.

COURSE OUTCOMES:
Successful students will be able to:
1. Identify the various types of units used for different components of electrical circuits
2. Analyze series and parallel DC and AC circuits using Kirchhoff's laws and Thevenin's theorem.
3. Analyze the dc operation of diodes, bipolar-junction transistors, and field-effect transistors.

COURSE FORMAT:
Lecture / Instructional Hours: 2 hrs per week, Tutorial: 1 hr per week, Laboratory Work: 3 hr per week.
[For short semester, Instructional Hours: 4 hrs per week, Tutorial: 2 hrs per week, Laboratory Work: 6 hrs per
week.]

Total Student Learning Time (SLT) ( L = Lecture; T = Tutorial; P = Practical; O = Others )


Face to Face Guided & Independent Total Student Learning Time
L T P O Learning (hr) (hr)
24 12 30 6 88 160

STUDENT EVALUATION:
Test 1: 10%, Test 2: 10%, Laboratory/project: 20%, Assignments/Tutorial: 20%, Final Examination: 40%.

FINAL EXAMINATION FORMAT:


Duration: 2 hours.
Students are required to answer FOUR out of SIX questions.

GRADING SCALE:
A+ (90-100), A (80–89), A- (75-79), B+ (70-74), B (65–69), B- (60–64), C+ (55–59) C (50–54), C- (45–49),
D (40–44), F(0–39)

BASIC TEXTS:
1. Boylestad, R. L. Nashelsky. Introductory Circuit Analysis. 12nd ed.. Pearson, 2012.
2. Floyd, Thomas L. Electronics Fundamentals. 8th ed. Prentice Hall, New Jersey, 2010
3. Floyd, Thomas L. Electric Devices 9th ed. Prentice Hall, New Jersey, 2012

REFERENCES:
1. Floyd, Thomas L. Electric Devices Fundamentals. 8th ed. Prentice Hall, New Jersey, 2010
2. Malvino, A. P. Electronic Principles. 7th ed. McGraw-Hill Book Company: New York, 2006

DEEI/DMEI: EEE1106 CIRCUIT THEORY Page 1 of 2


Class Syllabus:

Lecture(s) Topics
1-3 The Electric Circuit: Units, standards, resistance, maximum power transfer, superposition theorem,
Kirchhoff's Laws, Thevenin's Theorem.
4-5 Alternating Voltage and Current: generation of alternating e.m.f., average and r.m.s. values,
representation of an alternating quantity by a phasor, addition and subtraction of phasors.
6-8 Single-Phase Circuits: Circuits with R, L and C in series and in parallel, series and parallel
resonance, Q factor, power and power factor.
9-10 Complex Notation: The j operator, resistance, reactance and impedance, conductance, susceptance
and admittance, active and reactive power, conjugate of complex number.
Test 1
11-12 Semiconductor materials: N-type and P-type semiconductors, PN junctions & biasing.
13-14 Diodes and applications: rectifier diodes, half-wave rectifiers, full wave rectifiers, rectifier filters,
diode limiting and clamping circuits, zener diodes
15-17 Bipolar junction transistors: transistor construction, basic transistor operation, transistor
parameters and ratings, the transistor as a voltage amplifier, the transistor as a switch.
18-20 Bipolar transistor biasing: the DC operating point, base bias, emitter bias, voltage-divider bias,
collector-feedback bias.
Test 2
21-24 Field-effect transistors and biasing: the junction field-effect transistor (JFET), JFET
characteristics and parameters, JFET biasing, the metal oxide semiconductor FET (MOSFET),
MOSFET characteristics and parameters, MOSFET biasing.

Final Examination

LABORATORY WORK:
1. Kirchhoff’s Voltage Law and Kirchhoff’s Current Law
2. Thevenin's Theorem.
3. Voltage Relationships in a Series RL and RC Circuit.
4. Half-wave, full-wave and bridge rectification.
5. Current gain in a common emitter configuration
6. Junction Field-effect transistor (JFET) familiarization and characteristics curves.

DEEI/DMEI: EEE1106 CIRCUIT THEORY Page 2 of 2

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