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BDV94 PDF

isc Semiconductor provides specifications for its BDV92/94/96 silicon PNP power transistor product line. The transistors are designed for audio output stages and general amplifier and switching applications. Key specifications include: - Collector current up to -10A - Collector-emitter sustaining voltage from -45V to -100V depending on model - Junction temperature rating of 150°C - Thermal resistance from junction to case of 1.25°C/W - Turn-on and turn-off times in the microsecond range

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Милош Судимац
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118 views2 pages

BDV94 PDF

isc Semiconductor provides specifications for its BDV92/94/96 silicon PNP power transistor product line. The transistors are designed for audio output stages and general amplifier and switching applications. Key specifications include: - Collector current up to -10A - Collector-emitter sustaining voltage from -45V to -100V depending on model - Junction temperature rating of 150°C - Thermal resistance from junction to case of 1.25°C/W - Turn-on and turn-off times in the microsecond range

Uploaded by

Милош Судимац
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistor BDV92/94/96

DESCRIPTION
·Collector Current -IC= -10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94
-80V(Min)- BDV96
·Complement to Type BDV91/93/95

APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

BDV92 -60
Collector-Emitter
VCER BDV94 -80 V
Voltage
BDV96 -100

BDV92 -60
Collector-Emitter
VCEO BDV94 -80 V
Voltage
BDV96 -100

VEBO Emitter-Base Voltage -7 V

IC Collector Current-Continuous -10 A

ICM Collector Current-Peak -20 A

IBB Base Current -7 A

IE Emitter Current -14 A


Collector Power Dissipation
PC 100 W
@ TC=25℃
TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BDV91/93/95

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

BDV92 -60

Collector-Emitter
VCEO(SUS) BDV94 IC= -100mA ;IB=0 -80 V
Sustaining Voltage

BDV96 -100

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A


B -1.0 V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V

VBE(sat) Base -Emitter Saturation Voltage IC= -4A; IB= -0.4A


B -1.6 V

VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.6 V

ICEO Collector Cutoff Current VCE= VCEOmax;IB= 0 -0.2 mA

VCB= VCBOmax;IE= 0 -0.1


ICBO Collector Cutoff Current 1 mA
VCB= /2VCBOmax;IE= 0; TJ= 150℃ -1.0

IEBO Emitter Cutoff Current VEB= -7V; IC=0 -0.1 mA

hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20

hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5

fT Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V 4 MHz

Switching times

ton Turn-on Time 0.3 μs

IC= -4A; IB1= -IB2= -0.4A;


toff Turn-off Time 0.7 μs
VCC= -30V

tf Fall Time 0.3 μs

isc Website：www.iscsemi.cn 2

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