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Bu 921 T

The BU921T is a high voltage Darlington power transistor from INCHANGE Semiconductor intended for automotive ignition and motor control applications. It has an absolute maximum collector-emitter voltage of 450V and can handle a collector current of 10A continuously and 15A peak. Its key thermal and electrical characteristics allow it to operate reliably in high power switching applications.

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Eimi Karolina Martinez Vera
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192 views2 pages

Bu 921 T

The BU921T is a high voltage Darlington power transistor from INCHANGE Semiconductor intended for automotive ignition and motor control applications. It has an absolute maximum collector-emitter voltage of 450V and can handle a collector current of 10A continuously and 15A peak. Its key thermal and electrical characteristics allow it to operate reliably in high power switching applications.

Uploaded by

Eimi Karolina Martinez Vera
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor BU921T

DESCRIPTION
·High Voltage
·DARLINGTON

APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

c n
SYMBOL PARAMETER VALUE UNIT

VCES Collector-Emitter Voltage VBE= 0 450

e
V

m i.
VCEO Collector-Emitter Voltage

. i s c s 400 V

VEBO

w
Emitter-Base Voltage

w 5 V

IC

ICM
w
Collector Current

Collector Current-peak
10

15
A

IBB Base Current 5 A

Collector Power Dissipation


PC 105 W
@TC=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.2 ℃/W

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor BU921T

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA


B 1.8 V

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA


B 1.8 V

VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA


B 2.2 V

V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 140mA


B 2.5 V

. c n
VCE= 450V;VBE= 0 0.25

i
ICES Collector Cutoff Current mA
VCE= 450V;VBE= 0;Tj= 125℃ 0.5

ICEO Collector Cutoff Current

s c s em
VCE= 400V; IB= 0 0.25 mA

w . i
w
IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA

VECF

w
C-E Diode Forward Voltage IF= 7A 2.5 V

isc Website：www.iscsemi.cn

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