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Bu 209

This document provides the product specification for the BU209 silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in horizontal deflection circuits in color TV receivers. Key specifications include a collector current of 4A, collector-emitter voltage of 1700V, and junction temperature of 115°C. The transistor has a current gain of 2.25, output capacitance of 125pF, and current-gain bandwidth product of 7MHz.

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Arnaud Garnier
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31 views2 pages

Bu 209

This document provides the product specification for the BU209 silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in horizontal deflection circuits in color TV receivers. Key specifications include a collector current of 4A, collector-emitter voltage of 1700V, and junction temperature of 115°C. The transistor has a current gain of 2.25, output capacitance of 125pF, and current-gain bandwidth product of 7MHz.

Uploaded by

Arnaud Garnier
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU209

DESCRIPTION
·High Reverse Voltage
·High Peak Power
·Collector Current- IC = 4A

APPLICATIONS
·Designed for use in horizontal deflection circuits in color TV
receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCES Collector-Emitter Voltage 1700 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 4 A

ICM Collector Current-Peak 7.5 A

IBB Base Current-Continuous 2.5 A

IBM Base Current-Peak 4 A

Collector Power Dissipation


PC 12.5 W
@TC≤95℃

TJ Junction Temperature 115 ℃

Tstg Storage Temperature -65~115 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.6 ℃/W

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU209

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CES Collector-Emitter Breakdown Voltage IC= 1mA 1700 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA ; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.3A


B 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.3A


B 1.5 V

hFE DC Current Gain IC= 3A ; VCE= 5V 2.25

COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz 125 pF

fT Current-Gain—Bandwidth Product IC= 0.1A;VCE= 5V;ftest= 5MHz 7 MHz

Switching Times

ts Storage Time 10 μs
IC= 3A; IB= 1.8A;LB= 10μH
B

tf Fall Time 0.7 μs

isc Website：www.iscsemi.cn 2

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