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Isc GT43: Isc Silicon NPN Darlington Power Transistor

This document specifies an isc Silicon NPN Darlington Power Transistor. It has a collector-emitter breakdown voltage of 300V minimum, a current gain of 2000 minimum at 4A collector current, and a maximum collector saturation voltage of 3V at 6A collector current. It can be used for applications such as switching for dynamotor excitation and general purpose power amplification. The document provides maximum ratings and electrical characteristics for the transistor.

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26 views2 pages

Isc GT43: Isc Silicon NPN Darlington Power Transistor

This document specifies an isc Silicon NPN Darlington Power Transistor. It has a collector-emitter breakdown voltage of 300V minimum, a current gain of 2000 minimum at 4A collector current, and a maximum collector saturation voltage of 3V at 6A collector current. It can be used for applications such as switching for dynamotor excitation and general purpose power amplification. The document provides maximum ratings and electrical characteristics for the transistor.

Uploaded by

Testronicparts
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Product Specification

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

DESCRIPTION
Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min)
High DC Current Gain
: hFE= 2000(Min.)@ IC= 4A
Low Collector Saturation Voltage
: VCE(sat)= 3.0V(Max.)@ IC= 6A

APPLICATIONS
Switching for dynamotor excitation
General purpose power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25)


SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

VCEO

Collector-Emitter Voltage

300

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

10

IB

Base Current-Continuous

PC

Collector Power Dissipation


@ TC=25

100

TJ

Junction Temperature

150

-55~150

Tstg

Storage Temperature Range

isc websitewww.iscsemi.cn

GT43

isc Product Specification

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

GT43

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=10mA ;IB=0

300

V(BR)CBO

Collector-Base Breakdown Voltage

IC=1mA ;IE=0

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=50mA ;IC=0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC=1A; IB=10mA

1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC=6A; IB=50mA

3.0

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

100

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

100

hFE-1

DC Current Gain

IC= 4A; VCE= 4V

2000

hFE-2

DC Current Gain

IC= 5mA; VCE= 4V

300

isc websitewww.iscsemi.cn

CONDITIONS

MIN

TYP.

MAX

UNIT

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