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HFA08TB60: Ultrafast, Soft Recovery Diode Hexfred

The document summarizes the specifications and characteristics of the HFA08TB60 ultrafast soft recovery diode: 1. It is a 600V, 8A diode featuring ultrafast recovery time, very low peak reverse recovery current, and no tendency to "snap-off" during recovery. 2. Its fast switching characteristics reduce losses in the diode and transistor, allowing for higher frequency operation, reduced snubbing needs, and lower component counts. 3. The diode employs advanced construction and processing techniques to achieve industry-leading performance levels suited for use with IGBTs and MOSFETs in applications like power supplies, inverters, and motor drives.

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0% found this document useful (0 votes)
144 views6 pages

HFA08TB60: Ultrafast, Soft Recovery Diode Hexfred

The document summarizes the specifications and characteristics of the HFA08TB60 ultrafast soft recovery diode: 1. It is a 600V, 8A diode featuring ultrafast recovery time, very low peak reverse recovery current, and no tendency to "snap-off" during recovery. 2. Its fast switching characteristics reduce losses in the diode and transistor, allowing for higher frequency operation, reduced snubbing needs, and lower component counts. 3. The diode employs advanced construction and processing techniques to achieve industry-leading performance levels suited for use with IGBTs and MOSFETs in applications like power supplies, inverters, and motor drives.

Uploaded by

QuickerMan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Bulletin PD -2.341 rev.

A 11/00

HFA08TB60
HEXFRED TM
Ultrafast, Soft Recovery Diode

VR = 600V
BASE

Features CATHODE

• Ultrafast Recovery 4
VF(typ.)* = 1.4V
• Ultrasoft Recovery IF(AV) = 8.0A
• Very Low IRRM
Qrr (typ.)= 65nC
• Very Low Qrr 2
• Specified at Operating Conditions IRRM = 5.0A
Benefits trr(typ.) = 18ns
• Reduced RFI and EMI 1 3
CATHODE ANODE
di(rec)M/dt (typ.) = 240A/µs
• Reduced Power Loss in Diode and Switching 2

Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in TO-220AC
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.

Absolute Maximum Ratings


Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ TC = 100°C Continuous Forward Current 8.0
IFSM Single Pulse Forward Current 60 A
IFRM Maximum Repetitive Forward Current 24
PD @ TC = 25°C Maximum Power Dissipation 36
W
PD @ TC = 100°C Maximum Power Dissipation 14
TJ Operating Junction and
- 55 to +150 C
TSTG Storage Temperature Range

* 125°C

14/8/97
HFA08TB60
Bulletin PD-2.341 rev. A 10/00

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)


Parameter Min Typ Max Units Test Conditions
V BR Cathode Anode Breakdown Voltage 600 V IR = 100µA
1.4 1.7 IF = 8.0A
VFM Max Forward Voltage 1.7 2.1 V IF = 16A See Fig. 1
1.4 1.7 IF = 8.0A, TJ = 125°C
0.3 5.0 VR = VR Rated See Fig. 2
IRM Max Reverse Leakage Current µA
100 500 TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance 10 25 pF VR = 200V See Fig. 3
Measured lead to lead 5mm from
LS Series Inductance 8.0 nH
package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)


Parameter Min Typ Max Units Test Conditions
t rr Reverse Recovery Time 18 IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1 See Fig. 5, 6 & 16 37 55 ns TJ = 25°C
trr2 55 90 TJ = 125°C IF = 8.0A
IRRM1 Peak Recovery Current 3.5 5.0 TJ = 25°C
A
IRRM2 See Fig. 7& 8 4.5 8.0 TJ = 125°C VR = 200V
Qrr1 Reverse Recovery Charge 65 138 TJ = 25°C
nC
Qrr2 See Fig. 9 & 10 124 360 TJ = 125°C dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current 240 TJ = 25°C
A/µs
di(rec)M/dt2 During tb See Fig. 11 & 12 210 TJ = 125°C

Thermal - Mechanical Characteristics


Parameter Min Typ Max Units
Tlead! Lead Temperature 300 °C
RthJC Thermal Resistance, Junction to Case 3.5
RthJA" Thermal Resistance, Junction to Ambient 80 K/W
RthCS# Thermal Resistance, Case to Heat Sink 0.5
Weight 2.0 g
Wt
0.07 (oz)
Mounting Torque 6.0 12 Kg-cm
5.0 10 lbf•in

! 0.063 in. from Case (1.6mm) for 10 sec


" Typical Socket Mount
# Mounting Surface, Flat, Smooth and Greased

2 www.irf.com
HFA08TB60
Bulletin PD-2.341 rev. A 10/00

100 1000
TJ = 150°C

Reverse Current - IR (µA)


100

10 TJ = 125°C

1
Instantaneous Forward Current - IF (A)

0.1
10

TJ = 150°C 0.01 TJ = 25°C

TJ = 125°C 0.001
0 100 200 300 400 500 600
TJ = 25°C
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
1
Voltage
100
A
Junction Capacitance -CT (pF)

TJ = 25°C

10

0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V FM (V)

Fig. 1 - Maximum Forward Voltage Drop 1


1 10 100 1000
vs. Instantaneous Forward Current
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10

0.05

0.02 P DM
0.01 SINGLE PULSE
0.1 (THERMAL RESPONSE) t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics

www.irf.com 3
HFA08TB60
Bulletin PD-2.341 rev. A 10/00

80 20
VR = 200V
TJ = 125°C
I F = 16A TJ = 25°C
I F = 8.0A
I F = 4.0A 15
60
IF = 16A

I F = 8.0A

Irr- ( A)
trr- (nC)

IF = 4.0A
40 10

20 5

VR = 200V
TJ = 125°C
TJ = 25°C
0 0
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt

500 10000
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

400

I F = 16A I F = 16A
di (rec) M/dt- (A /µs)

I F = 8.0A
I F = 8.0A
300
Qrr- (nC)

I F = 4.0A
I F = 4.0A
1000

200

100

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt

4 www.irf.com
HFA08TB60
Bulletin PD-2.341 rev. A 10/00

t rr
IF
ta tb
0
REVERSE RECOVERY CIRCUIT
4
Q rr
VR = 200V 2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.01 Ω
0.75 I RRM
L = 70µH
D.U.T.
1 di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
D through zero crossing and IRRM
dif/dt
ADJUST trr X IRRM
G IRFP250
2. IRRM - Peak reverse recovery current Qrr =
2
S 3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current

Fig. 9 - Reverse Recovery Parameter Test Fig. 10 - Reverse Recovery Waveform and
Circuit Definitions

www.irf.com 5
HFA08TB60
Bulletin PD-2.341 rev. A 10/00

Conforms to JEDEC Outline TO-220AC


Dimensions in millimeters and inches

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.

http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.

6 www.irf.com

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