HFA08TB60: Ultrafast, Soft Recovery Diode Hexfred
HFA08TB60: Ultrafast, Soft Recovery Diode Hexfred
A 11/00
HFA08TB60
HEXFRED TM
Ultrafast, Soft Recovery Diode
VR = 600V
BASE
Features CATHODE
• Ultrafast Recovery 4
VF(typ.)* = 1.4V
• Ultrasoft Recovery IF(AV) = 8.0A
• Very Low IRRM
Qrr (typ.)= 65nC
• Very Low Qrr 2
• Specified at Operating Conditions IRRM = 5.0A
Benefits trr(typ.) = 18ns
• Reduced RFI and EMI 1 3
CATHODE ANODE
di(rec)M/dt (typ.) = 240A/µs
• Reduced Power Loss in Diode and Switching 2
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in TO-220AC
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
* 125°C
14/8/97
HFA08TB60
Bulletin PD-2.341 rev. A 10/00
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
100 1000
TJ = 150°C
10 TJ = 125°C
1
Instantaneous Forward Current - IF (A)
0.1
10
TJ = 125°C 0.001
0 100 200 300 400 500 600
TJ = 25°C
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
1
Voltage
100
A
Junction Capacitance -CT (pF)
TJ = 25°C
10
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V FM (V)
D = 0.50
1
0.20
0.10
0.05
0.02 P DM
0.01 SINGLE PULSE
0.1 (THERMAL RESPONSE) t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
80 20
VR = 200V
TJ = 125°C
I F = 16A TJ = 25°C
I F = 8.0A
I F = 4.0A 15
60
IF = 16A
I F = 8.0A
Irr- ( A)
trr- (nC)
IF = 4.0A
40 10
20 5
VR = 200V
TJ = 125°C
TJ = 25°C
0 0
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt
500 10000
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
400
I F = 16A I F = 16A
di (rec) M/dt- (A /µs)
I F = 8.0A
I F = 8.0A
300
Qrr- (nC)
I F = 4.0A
I F = 4.0A
1000
200
100
0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
t rr
IF
ta tb
0
REVERSE RECOVERY CIRCUIT
4
Q rr
VR = 200V 2
I RRM 0.5 I RRM
di(rec)M/dt 5
0.01 Ω
0.75 I RRM
L = 70µH
D.U.T.
1 di f /dt
1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
D through zero crossing and IRRM
dif/dt
ADJUST trr X IRRM
G IRFP250
2. IRRM - Peak reverse recovery current Qrr =
2
S 3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Fig. 10 - Reverse Recovery Waveform and
Circuit Definitions
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
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http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.
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