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Device Applications: Technologies For RF and Microwave Applications

The document discusses technologies for radio frequency (RF) and microwave applications, focusing on power amplifiers and oscillators. For power amplifiers at low power and below 10 GHz, silicon is commonly used. Above 5 GHz or for very high power, compound semiconductors like silicon carbide, gallium arsenide, and gallium nitride are required. For oscillators, bipolar junction transistors are often preferred for low phase noise, while field effect transistors can also be used. The appropriate technology depends on the specific application's power and frequency requirements.

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Bilal Haider Tanoli
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33 views10 pages

Device Applications: Technologies For RF and Microwave Applications

The document discusses technologies for radio frequency (RF) and microwave applications, focusing on power amplifiers and oscillators. For power amplifiers at low power and below 10 GHz, silicon is commonly used. Above 5 GHz or for very high power, compound semiconductors like silicon carbide, gallium arsenide, and gallium nitride are required. For oscillators, bipolar junction transistors are often preferred for low phase noise, while field effect transistors can also be used. The appropriate technology depends on the specific application's power and frequency requirements.

Uploaded by

Bilal Haider Tanoli
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Device applications

Technologies for RF and microwave applications

Fabrizio Bonani

Dipartimento di Elettronica
Politecnico di Torino

High speed electron devices Device applications


Contents

1 Introduction

2 Power amplifiers

3 Oscillators

High speed electron devices Device applications


Devices vs. applications

The use of the various devices we have considered


depends deeply on the specific applications
 RF and microwave power amplifiers (PAs)
 RF and microwave oscillators
 other nonlinear applications (e.g., mixers, PLL, etc.)
We consider only PAs and oscillators

High speed electron devices Device applications


Contents

1 Introduction

2 Power amplifiers

3 Oscillators

High speed electron devices Device applications


PA for low power 1

For very low power and frequency below 10 GHz, Si (RF


CMOS and Si-based BJT/HBT) is the dominant technology
Keeping the frequency below 5 GHz, higher power requires
a larger value of the breakdown voltage that can be
obtained with Si using the LDMOS (Lateral Double-diffused
MOSFET, the lateral version of power MOSFET) structure
Very large power and/or frequency above 5 GHz require
compound semiconductors:
 SiC MESFET for very large power and low frequency
 GaAs (or SiGe) HBT for intermediate power, high linearity
and high frequency
 GaN HEMT for large power and frequency
Frequencies above 10 GHz require GaAs HEMT
(low/medium power) or GaN HEMTs (high power)

High speed electron devices Device applications


PA for low power 2

10
3 SiC
LDMOS 50 V
Power, W

2
10
LDMOS 28 V GaN
1
10
LDMOS 3 V GaAs
0
10 Si Bipolar
RF CMOS
0.1 2 5 10
Frequency, GHz

High speed electron devices Device applications


PA for low power 3
3 GHz
Several competing Few competing
3 technologies technologies
10
SiC MESFET
2
10 GaN HEMT
Power, W

Si LDMOS

1
GaAs HBT
10

0
10
GaAs HEMT

0 1 2
10 10 10
Frequency, GHz
High speed electron devices Device applications
Contents

1 Introduction

2 Power amplifiers

3 Oscillators

High speed electron devices Device applications


Oscillators 1

Both FET and bipolar technologies can be used for


oscillators
Bipolars are mostly favoured for low phase noise
oscillators, because they show lower 1/f noise than FETs

High speed electron devices Device applications


Oscillators 2

Oscillator output power, W


3
10
2
10
1
10 BJT MESFET
0
10
-1
10
HBT HEMT
-2
10

3´10 10 3´10 10 3´10 10


0 1 1 2 2 3

Frequency, GHz
High speed electron devices Device applications

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