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2sd2061 PDF

This document specifies a silicon NPN power transistor with a TO-220Fa package. It has low saturation voltage, excellent DC current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. The document provides maximum ratings, characteristics, and package outline dimensions for the 2SD2061 transistor.

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Daniel Paredes
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193 views3 pages

2sd2061 PDF

This document specifies a silicon NPN power transistor with a TO-220Fa package. It has low saturation voltage, excellent DC current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. The document provides maximum ratings, characteristics, and package outline dimensions for the 2SD2061 transistor.

Uploaded by

Daniel Paredes
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Product Specification www.jmnic.

com

Silicon NPN Power Transistors 2SD2061

DESCRIPTION ・
・With TO-220Fa package
・Low saturation voltage
・Excellent DC current gain characteristics
・Wide safe operating area

APPLICATIONS
・For low frequency power
amplifier applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 emitter

Fig.1 simplified outline (TO-220Fa) and symbol

ABSOLUTE MAXIMUM RATINGS AT Tc=25℃


SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 80 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 3 A

ICM Collector current-Peak 6 A

PC Collector power dissipation TC=25℃ 30 W

PC Collector power dissipation Ta=25℃ 2 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

JMnic
Product Specification www.jmnic.com

Silicon NPN Power Transistors 2SD2061

CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO Collector-emitter breakdown voltage IC=1mA , IB=0 60 V

VCBO Collector-base breakdown voltage IC=50μA , IE=0 80 V

VEBO Emitter-base breakdown voltage IE=50μA , IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A 1.0 V

VBEsat Emitter-base saturation voltage IC=2A IB=0.2A 1.5 V

ICBO Collector cut-off current VCB=60V IE=0 10 μA

IEBO Emitter cut-off current VEB=4V; IC=0 10 μA

hFE DC current gain IC=0.5A ; VCE=5V 100 320

fT Transition frequency IC=0.5A ; VCE=5V 8 MHz

Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 70 Pf

JMnic
Product Specification www.jmnic.com

Silicon NPN Power Transistors 2SD2061

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

JMnic

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