Silicon PNP Power Transistors
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Sebastian CorreaSilicon PNP Power Transistors
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Sebastian CorreaJMnic Product Specification
Silicon PNP Power Transistors 2SA1516
DESCRIPTION ・
・With TO-3P(I) package
・Complement to type 2SC3907
・High collector voltage
APPLICATIONS
・Power amplifier applications
・Recommend for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -180 V
VCEO Collector-emitter voltage Open base -180 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -12 A
IB Base current -1.2 A
PC Collector power dissipation TC=25℃ 130 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -55~150 ℃
JMnic Product Specification
Silicon PNP Power Transistors 2SA1516
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -180 V
VCEsat Collector-emitter saturation voltage IC=-8 A;IB=-0.8 A -3.0 V
VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V
ICBO Collector cut-off current VCB=-180V; IE=0 -5 μA
IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA
hFE-1 DC current gain IC=-1A ; VCE=-5V 55 180
hFE-2 DC current gain IC=-7A ; VCE=-5V 35
fT Transition frequency IC=-1A ; VCE=-5V 25 MHz
COB Output capacitance IE=0; VCB=-10V;f=1MHz 470 pF
hFE-1 classifications
R O
55-110 90-180
2
JMnic Product Specification
Silicon PNP Power Transistors 2SA1516
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic Product Specification