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2 Sa 1205

This document provides product specifications for the 2SA1205 silicon PNP power transistor. It includes descriptions of the TO-3PN package and pin connections. Absolute maximum and characteristic ratings are given for parameters like collector current, power dissipation, and breakdown voltages. Typical values are listed for saturation voltage, current gain, transition frequency, and switching times. The package outline dimensions in millimeters are also shown.

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Rolando Omar Navarro
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50 views3 pages

2 Sa 1205

This document provides product specifications for the 2SA1205 silicon PNP power transistor. It includes descriptions of the TO-3PN package and pin connections. Absolute maximum and characteristic ratings are given for parameters like collector current, power dissipation, and breakdown voltages. Typical values are listed for saturation voltage, current gain, transition frequency, and switching times. The package outline dimensions in millimeters are also shown.

Uploaded by

Rolando Omar Navarro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JMnic Product Specification

Silicon PNP Power Transistors 2SA1205

DESCRIPTION
・With TO-3PN package
・High power dissipation

APPLICATIONS
・For general purpose applications

PINNING

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -70 V

VCEO Collector-emitter voltage Open base -50 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -12 A

IB Base current -4 A

PC Collector power dissipation TC=25℃ 100 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon PNP Power Transistors 2SA1205

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -50 V

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.12A -0.5 V

ICBO Collector cut-off current VCB=-70V; IE=0 -0.1 mA

IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA

hFE DC current gain IC=-5A ; VCE=-0.5V 40

fT Transition frequency IE=3A ; VCE=-12V 20 MHz

Switching times

ton Turn-on time 0.60 μs

IC=-5A;RL=4Ω
tstg Storage time IB1=-IB2=-0.12A 0.50 μs
VCC=-20V

tf Fall time 0.25 μs

2
JMnic Product Specification

Silicon PNP Power Transistors 2SA1205

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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