Ahsanullah University of Science and Technology

Department of Electrical and Electronic Engineering

EE
LABORATORY MANUAL
FOR
/E
ELECTRICAL AND ELECTRONIC SESSIONAL COURSES
ST
AU

Student Name :
Student ID :

Course no : EEE - 2104

Course Title : Electronic Circuits - I Lab

For the students of

Department of Electrical and Electronic Engineering
2nd Year, 1st Semester
Experiment No: 1

Name of the Experiment : I-V Characteristics of diode.

Objective :
Study the I-V characteristic of diode.

Theory :
A diode is a bi-polar device that behaves as the short circuit when it is in forward bias and as an open
circuit when it is in reverse bias condition.

EE
Figure 1.1 : Schematic Diagram of Diode.
/E Figure 1.2 : P - N Junction Diode .

There are two types of biasing condition for a diode :

1. When the diode is connected across a voltage source with positive polarity of source connected
ST

to p side of diode and negative polarity to n side, then the diode is in forward bias condition.

2. When the diode is connected across a voltage source with positive polarity of source connected
to n side of diode and negative polarity to p side, then the diode is in reverse bias condition.
AU

Figure 1.3 : Forward Bias connection. Figure 1.4 : Reverse Bias connection.

If the input voltage is varied and the current through the diode corresponds to each voltage are taken
then the plot of diode current (Id) vs diode voltage (VD) will be follows :

2
 EE
Figure 1.5 : I - V Characteristics of Diode.

At the reverse bias condition the amount of current flows through the diode is very small (at
microampere range). But if the voltage continuously increases in reverse direction, at a certain value the
diode will break down and huge amount of current will flow in reverse direction. This is called
/E
breakdown of diode. In laboratory the breakdown will not tested because it will damages the diode
permanently.
ST

From the characteristics curve it can be seen that, a particular forward bias voltage (VT) is required to
reach the region of upward swing. This voltage, VT is called the cut-in voltage or threshold voltage of
diode. For Si diode the typical value of threshold voltage is 0.7 volt and for Ge diode is 0.3 volt.
AU

Equipments And Components :

Serial no. Component Details Specification Quantity
1. p-n junction diode 1N4007 1 piece
2. Resistor 1 KΩ 1 piece
3. DC power supply 1 unit
4. Signal generator 1 unit
5. Trainer Board 1 unit
6. Oscilloscope 1 unit
7. Digital Multimeter 1 unit
8. Chords and wire as required

3
Experimental Setup :
+ VR - + Ch -

1K

-
10 Vp-p 1K

Ch
Vd VAC
Vdc 100 Hz

+
Figure 1.6 : Circuit Diagram for Obtaining Diode Figure 1.7 : Circuit Diagram for Obtaining
Diode Forward Characteristics. Characteristics From Oscilloscope.

Procedure :
1. Measure the resistance accurately using multimeter.

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2. Construct the circuit as shown in figure - 1.6.
3. Vary input voltage Vdc. Measure Vdc, Vd, VR for the given values of Vd and record data on data
table. Obtain maximum value of Vd without increasing Vdc beyond 25 volt.
4. Calculate the values of Id using the formula, Id = VR / R.
5. Construct the circuit as shown in figure - 1.7.
/E
6. Ste the oscilloscope in X-Y mode. Identify zero record on oscilloscope display. Make proper
connection and observe the output.
7. Repeat the step 5 and 6 by increasing the input supply frequency 5 KHz.
ST

Data Table :

Vdc (volt) Vd (volt) VR (volt) Id = VR / R (mA)

AU

Report :
1. Draw the I - V characteristics curve of diode from the reading obtain in this experiment.
2. Calculate static resistance for Id = 5 mA and Id = 10 mA.
3. Determine the Q- point for the circuit in figure - 6, when Vdc = 8 volt.

4
Experiment No: 02

Name of the Experiment: Diode rectifier circuits.

Objective:
Study of different diode rectifier circuits.

Theory:
A rectifier converts an AC signal into a DC signal. From the characteristic curve of a diode we observe
that if allows the current to flow when it is in the forward bias only. In the reverse bias it remains open.
So, when an alternating voltage (signal) is applied across a diode it allows only the half cycle (positive
half cycle depending on the orientation of diode in the circuit) during its forward bias condition, other
half cycle will be clipped off. In the output the load will get DC signal.

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Diode rectifier can be categorized in two major types. They are -
1. Half-wave rectifier.
2. Full-wave rectifier.
/E
Half - Wave Rectifier: Half-wave rectifier can be built by using a single diode. The circuit diagram and
the wave shapes of the input and output voltage of half wave rectifier are shown bellow (figure 2.1) -
D
ST

+
Vs RL VO
-
AU

Figure 2.1: Half Wave Rectifier.

The major disadvantages of half wave rectifier are -

 In this circuit the load receives approximately half of input power.
 Average DC voltage is low.
 Due to the presence of ripple output voltage is not smooth one.
Full Wave Rectifier: in the full-wave rectifier both the half cycle is present in the output. Two circuits are
used as full-wave rectifier are shown bellow -
a) Full-wave rectifier using center-tapped transformer.
b) Full-wave bridge rectifier.

Full-wave rectifier using center-tapped transformer: two diodes will be connected to the ends of the
transformer and the load will be between the diode and center tap. The circuit diagram and the wave
shapes are shown in bellow (figure 2.2) -

5
 D1

12 V RL
Vs 12 V

12 V - V O +
D2

Figure 2.2: Full Wave Rectifier Using Center Tapped Transformer.

Full-wave rectifier using center-tapped transformer circuit has some advantages over full-wave rectifier.
Those are -
 Wastage of power is less.
 Average DC output increase significantly.
 Wave shape becomes smoother.

The disadvantages of full-wave rectifier using center-tapped transformer are -

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 Require more space and becomes bulky because of the transformer.
 Not cost effective (for using transformer).

Full-wave bridge rectifier: a bridge rectifier overcomes all the disadvantages of described above. Here
/E
four diodes will be connected as bridge connection. The circuit diagram and the wave shapes are shown
in bellow (figure 2.3) -
1
ST D

D2

RL
Vs
- VO +
4
D
D3
AU

Figure 2.3: Full Wave Bridge Rectifier.

This rectifier however cannot produce a smooth DC voltage. It produces some ripple in the output. This
ripple can be reducing by using filter capacitor across the load.
Equipments And Components:

Serial no. Component Details Specification Quantity

1. p-n junction diode 1N4007 4 piece
2. Resistor 10KΩ 1 piece
3. Capacitor 0.22µF, 10µF 1 piece each
4. Signal generator 1 unit
5. Trainer Board 1 unit
6. Oscilloscope 1 unit
7. Digital Multimeter 1 unit
8. Chords and wire as required

6
Experimental Setup:
D

+ +
D1 D3

10 kΩ
10 Vp-p 10 Vp-p
10 kΩ C VO 1 kHz C VO
1 kHz

D4 D2
- -

Figure 2.4 : Experimental Circuit 1. Figure 2.5 : Experimental Circuit 2.

Procedure:
1. Connect the circuit in breadboard as shown in figure 2.4 without capacitor.
2. Observe the output and input voltages in the oscilloscope and draw them.

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3. Connect the 0.22µF capacitor and repeat step 2.
4. Connect the 10µF capacitor and repeat step 2. How does the output wave-shape differ from
that in step 3?
5. Vary the frequency from 10 KHz to 100 Hz. What effects do you observe when frequency is
/E
changed?
6. Connect the circuit breadboard as shown in figure 2.5 without capacitor.
7. Observe the output and input voltages in the oscilloscope and draw them.
8. Connect the 0.22µF capacitor and repeat step 7.
ST

9. Connect the 10µF capacitor and repeat step 7. How does the output wave-shape differ from
that in step 8?
10. Vary the frequency from 10 KHz to 100 Hz. What effects do you observe when frequency is
changed?
AU

Report:
1. Write the answers that were asked during the working procedure.
2. Draw the input wave, output wave (without and with capacitor) for both the circuits.
3. What is the effect in output for changing input signal frequency for both the circuits
(without and with capacitor)?
4. What is the function of capacitor in the both circuits? Why a capacitor of higher value is
preferable?

7
Experiment No: 03

Name of the Experiment: Clipper and Clamper circuits.

Objective:
Study of Clipper and Clamper circuits.

Theory:
Clipper: Clippers remove signal voltage above and below a specified level. In the experiment no. 2, half
wave rectifier can also be called as a clipper circuit. Because it clipped off the negative half cycle of the
input signal.

A diode connected in series with the load can clipped off any half cycle of input depending on the

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orientation of the diode. (figure 3.1) -

+
/E
Vs RL VO
-
ST

Figure 3.1: Simple Diode Clipper.

It is also possible to clip off a certain part of the input signal bellow a specified signal level by using a
AU

voltage source in reverse bias condition with the diode. If a battery of V volts is added to it, then for Vs
above (V+0.7) volts the diode becomes forward bias and turns ON. The load receives above this voltage
level.

V D

+
Vs RL VO
-

Figure 3.2: Clipper Circuit Using Bias Diode.

A diode connected in parallel with the load can clip off the input signal above 0.7 volts of one half cycle
depending on the connection of the diode. Using two diodes in parallel in opposite direction both the
half cycle can be limited to 0.7 volts.

8
 +
Vs D RL VO
-

Figure 3.3: Parallel Clipper Circuit.

Using a biased diode it is possible to limit the output voltage to a specified level depending on the
attached battery voltage. Either the half cycles or both of them can be clipped off above a specified
level.

D2 D1 +

EE
Vs RL VO
-
V2 V1

Figure 3.4: Biased Parallel Clipper Circuit.

/E
In practical case for both the series and parallel clippers voltage source is not added. Required voltage
levels are maintained by adding more semiconductor diode.
ST

Clamper: A DC clamper circuit adds a DC voltage to the input signal. For instance, if the incoming signal
varies from -10 volts to +10 volts, a positive DC clamper will produce an output that ideally swing from 0
volts to 20 volts and a negative clamper would produce an output between 0 volts to -20 volts.
AU

+
Vs D RL VO
-

Figure 3.5: Clamper Circuit.

9
Equipments And Components :
Serial no. Component Details Specification Quantity
1. p-n junction diode 1N4007 1 piece
2. Resistor 100KΩ 1 piece
3. Capacitor 0.1µF 1 piece
4. Signal generator 1 unit
5. Trainer Board 1 unit
6. DC power Supply 1 unit
7. Oscilloscope 1 unit
8. Digital Multimeter 1 unit
9. Chords and wire as required

Experimental Setup:

EE
VB VB
D D

+ +
/E 100 k Ω VO 100 k Ω VO
Vs Vs
- -

(a) (b)
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Figure 3.6: Experimental Circuit 1.

100 k Ω 100 k Ω
AU

D + D +

Vs VO Vs VO
VB VB
- -

(a) (b)

Figure 3.7: Experimental Circuit 2.

0. 1 µF 0. 1 µF
D D
+ +
100 k Ω

100 k Ω

Vs VO Vs VO
- -
VB VB

(a) (b)

Figure 3.8: Experimental Circuit 3.

10
Procedure :
1. Connect the circuit as shown in the figure 3.6. Using a sinusoidal voltage source with 5 volts
peak (Vm).
2. Observe the output wave shapes for various values of VB and draw VB = 2.5 volts for each
circuit..
3. Do the same as in step 1 and 2 for the circuits in figure 3.7 with Vs wave shapes as drawn
beside each figure having Vm = 5 volts. Parallel Branch 1 of circuit of figure 3.7(a) and Branch
2 of circuit of figure 3.7(b) and observe output.
4. For the clamper circuits of figure 3.8 do the same steps as step 1 and 2 with Vs wave shapes
as drawn beside each figure having Vm = 5 volts.

Report :

EE
1. Sketch all the waveforms observed on the oscilloscope.
2. What role dose the value of capacitor used in the clamping circuit play in order to obtain
proper clamping?
3. Add the SPICE simulation waveforms of all the experimental circuits.
/E
ST
AU

11
Experiment No : 04

Name of the Experiment : Zener Diode applications.

Objective:
Study of the Zener Diode applications.

Theory :
The diodes we have studied before do not operate in the breakdown region because this may damage
them. A Zener diode is different; it is a silicon diode that the manufacturer has optimized for operation
in the breakdown region. It is used to build voltage regulator circuits that circuits that hold the load
voltage almost constant despite large change in line voltage and load resistance. The symbol of Zener
diode shows in figure 4.1.

EE Figure 4.1 : Symbol of Zener Diode.

/E
ST
AU

Figure 4.2 : I - V Characteristics of Zener Diode.

The Zener diode may have a breakdown voltage from about 2 to 200 volts. These diodes can operate in
any of three regions – forward, leakage and breakdown. Figure 4.2 shows the I-V characteristics curve of
Zener diode.

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  In the forward region it works as an ordinary diode.
 In the leakage region (between zero and breakdown) it has only a small reverse saturation
current.
 In the breakdown it has a sharp knee, followed by an almost vertical increase in current
without changing the voltage.
 The voltage is almost constant, approximately equal to Vz over most of the breakdown
region.

Equivalent circuits of Zener Diode : Two approximation are used for Zener Diode equivalent circuit.

First Approximation : As the voltage remains constant across the Zener diode though the current
changes through it, it is considered as a constant voltage source according to the first approximation.

EE
= VZ
/E
Second Approximation : A Zener resistance is in series with the ideal voltage source is approximated.
ST

RZ
=
VZ
AU

Equipments and Components:

Serial no. Component Details Specification Quantity
1. Zener diode 5 volts 1 piece
2. Resistor 220Ω, 470Ω, 1KΩ 1 piece each
3. POT 10KΩ 1 unit
4. Trainer Board 1 unit
5. DC Power Supply 1 unit
6. Digital Multimeter 1 unit
7. Chords and wire as required

13
Experimental Setup:
470 Ω 470 Ω

+
220 Ω
VZ V VL
10 KΩ
-

Figure 4.3 : Experimental Circuit 1. Figure 4.4 : Experimental Circuit 2.

EE
Procedure :
1. Connect the circuit as shown in the figure 4.3
2. Vary the supply voltage from zero volt, complete the Table 4.1.
/E
3. Connect the circuit as shown in the figure 4.4
4. Keep the POT at maximum position and power up the circuit. Apply 10 as V.
5. Gradually decrease the POT resistance and complete the Table 4.2.
ST

6. Replace load with 1KΩ resistance, vary the supply voltage and take reading for Table 4.3.

Table 4.1 : Data for I - V characteristics.

AU

V (volts) VR (volts) Vz (volts) Iz = VR / R

(mA)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0

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Table 4.2 : Data for regulation due to load variation.

V220 (mV) VL (volts) IL (Amp)

Table 4.3 : Data for regulation due supply voltage variation.

V (volts) VL (volts)
5.0
6.0

EE
7.0
8.0
8
9.0
10.0
11.0
/E
12.0

Report :
ST

1. Plot the I - V characteristics of Zener diode. Determine the Zener breakdown voltage from
the plot.
2. Plot IL vs VL for the data table 4.2. Find the voltage regulation.
AU

3. Plot VL vs V for the data table 4.3. Find the voltage regulation.

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Experiment No: 05

Name of the Experiment : The output characteristics of CE (common emitter) configuration of

BJT.

Objective:
Study of the output characteristics of CE (common emitter) configuration of BJT.

Theory :
Unlike the diode, which has two doped region, a transistor has three doped region. They are as follows –
a) Emitter,
b) Base and
c) Collector.

EE
These three doped regions form two junctions: One between the emitter and base and other between
the collector and the base. Because of these it can be thought as combination of two diodes, the emitter
and the base form one diode and the collector and base form another diode. The emitter is heavily
doped. Its job is to emit or inject free majority carrier (electron for NPN and hole for PNP) into the base.
The base is lightly doped and very thin. It passes the most of the emitter-injected electron (for NPN) into
/E
the collector. The doping level of the collector is between emitter and base. Figure 5.1 shows the biased
NPN transistor.
ST

RC

+
RB
VCE
+ VCC
AU

-
VBB VBE

Figure 5.1 : Biasing of an NPN transistor.

If the VBB is greater than the barrier potential, emitter electron will enter base region. The free electron
can flow either into the base or into the collector. As base lightly doped and thin, most of the free
electron will enter into the collector.
There are three different current in a transistor. They are emitter current (IE), collector current (IC) and
the base current (IB) are shows in figure 5.2.
IC

IB

IE

Figure 5.2 : Different current in transistor.

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Here, IE = IC + IB, and the current gain =

Characteristics Curve : The characteristics of a transistor is measured by two characteristics curve. They
are as follows –
a) Input characteristics curve.
b) Output characteristics curve.

Input Characteristics Curve : Input characteristics is defined as the set of curves between input current
(IB) vs. input voltage (VBE) for the constant output voltage (VCE). It is the same curve that is found for a
forward biased diode.
Output Characteristics Curve : Output characteristics is defined by the set of curves between output
current (IC) vs. output voltage (VCE) for the constant input current (IB). The curve has the following
features –
 It has three regions namely Saturation, Active and Cutoff region.
 The rising part of the curve, where VCE is between 0 and approximately 1 volt is called

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saturation region. In this region the collector diode is not reversed biased.
 When the collector diode of the transistor becomes reverse biased, the graph becomes
horizontal. In this region the collector remains almost constant. This region is known as
the active region. In applications where the transistor amplifies weak radio and TV signal,
/E
it will always be operation in the active region.
 When the base current is zero, but there is some collector current. This region of the
transistor curve is known as the cutoff region. The small collector current is called
collector cutoff current.
ST

 For different value of base current (IB) an individual curve can be obtained.
AU

Figure 5.3 : (a) Input Characteristic, (b) Output Characteristic of NPN transistor.

17
Equipments And Components:
Serial no. Component Details Specification Quantity

1. Transistor C828 1 piece

2. Resistor 470Ω, 2.2KΩ, 3.3KΩ, 1 piece each

4.7KΩ, 10KΩ, 470KΩ

3. POT 100KΩ 1 unit

4. Trainer Board 1 unit

5. DC Power Supply 1 unit

6. Digital Multimeter 1 unit

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7. Chords and wire as required

Experimental Setup:
/E
ST

10 KΩ

+
R1 10 Ω VR470 470 Ω
-
AU

+
470 KΩ
VCE 30 V
+ VRB - +
-
R 2.2 KΩ VBE

Figure 5.4: Experimental Circuit.

Procedure:
1. Connect the circuit as shown in the figure 5.4. Use 2.2 KΩ as R.
2. Measure VRB and calculate IS using IE = VRB / RB. (We will assume that IB to be constant for a
particular setup at input.)
3. Measure the voltages of VCE and VR470. And calculate IC using IC = VR470 / R470.

18
 4. Take at least 10 reading by varying the POT.
5. Repeat step 1 to 4 with resistance R as 3.3 KΩ and 4.7 KΩ.

Table 5.1 : Data for I - V characteristics of transistor.

R IB = VRB / RB VCE VR470 IC = VR470 / R470

(KΩ) (µA) (volts) (volts) (mA)

2.2

EE
/E
3.3
ST
AU

4.7

Report:
1. Plot the graph of IC vs. VCE with necessary details. Show the different regions of operation.
2. Plot a hypothetical output characteristic using PNP transistor.
3. Find β for the three different condition.

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Experiment No: 06

Name of the Experiment: The BJT Biasing Circuits.

Objective:
Study of the BJT Biasing Circuits.

Theory:
Biasing a BJT circuit means to provide appropriate direct potentials and currents, using external sources,
to establish an operating point or Q-point in the active region. Once the Q-point is established, the time
varying excursions of input signal should cause an output signal of same waveform. If the output signal is
not a faithful reproduction of the input signal, for example, if it is clipped on one side, the operating
point is unsatisfactory and should be relocated on the collector characteristics. Therefore, the main
objective of biasing a BJT circuit is to choose the proper Q-point for faithful reproduction of the input

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signal. There are different types of biasing circuit. However, in the laboratory, we will study only the
fixed bias and self bias circuit. In the fixed bias circuit, shown if figure 6.1, the base current IB is
determined by the base resistance RB and it remains constant. The main drawback of this circuit is the
instability of Q-point with the variation of β of the transistor. In the laboratory, we will test the stability
using two transistors with different β. In the self bias circuit shown if figure 6.2, this problem is
/E
overcome by using the self biasing resistor RE to the emitter terminal.

Equipments And Components :

ST

Serial no. Component Details Specification Quantity

1. NPN Transistor C828, BD135 1 piece each

AU

2. Resistor 470Ω, 560Ω, 220KΩ 1 piece each

3. POT 10KΩ 1 unit
4. Trainer Board 1 unit

5. DC Power Supply 1 unit

6. Digital Multimeter 1 unit

7. Chords and wire as required

20
Experimental Setup:

RB 100 KΩ RC 470 Ω

220 KΩ

Figure 6.1: Experimental Circuit 1.

EE
RB1 10 KΩ RC 470 Ω

10 V
/E
RB2 10 KΩ 560 Ω
ST

Figure 6.2: Experimental Circuit 2.

Procedure :
AU

1. Arrange the circuit shown in figure - 6.1 by C828. Record RC and set RB to maximum value.
2. Decrease POT RB gradually so that VCE = VCC / 2.
3. Measure voltage across RC and VCE.
4. Record the Q-point (VCE, IC).
5. Replace the C828 transistor by BD135 and repeat step 3 and 4.
6. Arrange the circuit shown in figure - 6.2 by C828. Record RC and set RB to minimum value.
7. Increase POT RB2 gradually so that VCE = VCC / 2.
8. Measure voltage across RC and VCE.
9. Record the Q-point (VCE, IC).
10. Replace the C828 transistor by BD135 and repeat step 8 and 9.

21
Data Sheet :

Table 6.1 : Data for Fixed Bias Circuit.

Transistor RC VC IC = VC / RC VCE Q-point

(Ω) (volt) (Amp) (volt)
C828
BD135

Table 6.2 : Data for Self Bias Circuit.

Transistor RC VC IC = VC / RC VCE Q-point

(Ω) (volt) (Amp) (volt)
C828
BD135

EE
Report:
1. Which circuit shows better stability? Explain in the context of the results obtained in the
/E
laboratory.
2. Draw the DC load line for both the circuits and show the Q-point.
ST
AU

22
Experiment No: 07

Name of the Experiment: Frequency Response of a CE (Common Emitter) Amplifier Circuit And
Measurement of Input And Output Impedance.

Objective:
Study of the Frequency Response of a CE (Common Emitter) Amplifier Circuit And Measurement of Input
And Output Impedance.

Theory:
Frequency response of an amplifier means the range of frequency or the band of frequency within
which the gain of the amplifier remains constant. This range of frequency is commonly called the
bandwidth of the amplifier. The two corners of the bandwidth are called lower cutoff and higher or
upper cutoff frequencies respectively. These are also known as -3dB points. Gain is expressed in dB by

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the relation of dB = 20 log (gain). The output impedance will be measured using Thevenin’s Theorem
that is if the load impedance is equal to the output impedance then the voltage drop across the load will
be half of the open circuit voltage. The input impedance will be measured using Ohm’s law.

Equipments And Components:

/E
Serial no. Component Details Specification Quantity

1. Transistor C828 1 piece

ST

2. Resistor 100Ω, 560Ω, 1KΩ, 1 piece each

33KΩ, 100KΩ
3. POT 10KΩ 1 unit
4. Capacitor 10 µF, 47 µF 2 pieces, 1 piece
AU

5. Trainer Board 1 unit

6. DC Power Supply 1 unit
7. Oscilloscope 1 unit
8. Digital Multimeter 1 unit
9. Chords and wire as required

23
Experimental Setup:

100 KΩ 1 KΩ
4.7 μf
Vo
100 Ω 10 μf

Rs 10 V

Vin
33 KΩ 560 Ω 10 μf

Figure 7.1: Experimental Circuit.

EE
Procedure:
1. Arrange the circuit shown in figure 7.1 and record RS.
2. Set the amplitude of Vin to zero and frequency to 1 KHz.
/E
3. Observe Vo in the oscilloscope. Gradually increase the amplitude of Vin up to the maximum
undistorted output.
4. Measure the voltage across Rs and Vin.
ST

5. Measure output voltage at no load condition. This is Voc.

6. Connect the POT between output node and ground. Adjust the POT so that voltage across if
becomes Voc / 2.
7. Disconnect the POT and measure it resistance. This is output resistance.
AU

8. Observe Vo and Vin in oscilloscope in dual mode. Take the values of Vo and Vin for the
frequencies specified in the data Table - 7.2.

Data Sheet:

Table 7.1: Data for Fixed Bias Circuit.

Vin VRs (volt) Rs (Ω) Iin = VRs / Rs Rin = Vin / Iin Ro (Ω)
(volt) (Amp) (Ω)

24
Table 7.2: Data for Self Bias Circuit.

Frequency, f Vin (p-p) Vo (p-p) Gain

(Hz) (volt) (volt) Gain = Vo / Vin
(dB)
100
200
300
400
600
900
1K
2K
3K
6K
10 K
30 K

EE
60 K
80 K
90 K
100 K
200 K
300 K
/E
400 K
500 K
ST

Report:
1. Draw the gain vs. frequency curve on a semilog paper.
2. Determine the bandwidth from the plot. Also mark the -3dB points on the plot.
AU

3. Compare the input and output impedance of CE (Common Emitter) configuration with CB
(Common Base) and CC (Common Collector) configurations. (From Books)

25
Experiment No: 08

Name of the Experiment: The I - V Characteristics of an N - Channel Enhancement type MOSFET.

Objective:
Study of the I - V Characteristics of an N - Channel MOSFET.

Theory:
The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a unipolar, three terminal
semiconductor device. A MOSFET is called a unipolar device because the current through it result from
the flow of only one of the two kind of charge carrier: electrons or holes. The three terminals of MOSFET
are known as Gate (G), Drain (D) and Source (S). The voltage applied to the gate controls the flow of
current between drain and source of a MOSFET. In our study we will study the I - V characteristics of an
N - channel MOSFET for different values of VGS. For N- channel enhancement type MOSFET VGS is positive

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(+) and VDS is positive (+). For MOSFET, the positive value of VDS at which the output characteristics
enters the saturation region with VGS ≥ VT volt, where VT is the threshold voltage of MOSFET. An
important parameter is pinch off voltage VP. The value of drain current at which pinch off occurs with VDS
= VP volt is known as IDSS.
/E
ID VDS ID
VP
VGS4
ST

VGS3

VGS2

VGS1
AU

VGS0
0 VT VGS 0 VDS
Input Characteristic Curve Output Characteristic Curve

Equipments And Components:

Serial no. Component Details Specification Quantity
1. MOSFET 2N3819 1 piece
2. Resistor 1KΩ 1 piece
3. Trainer Board 1 unit
4. DC Power Supply 1 unit
5. Digital Multimeter 1 unit
6. Chords and wire as required

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Experimental Setup:

RD = 1 K

VDS

VGS

Figure 8.1: Experimental Circuit.

Procedure:

EE
1. Arrange the circuit shown in figure 8.1.
2. Take the reading of VDS and VR as shown in the data table. The variable voltage source
should be varied using fine tuning.
Data Sheet: Table 8.1:
/E
VGS (volt) VDS (volt) VR (volt) IDS = VR / R (mA)
ST

1
AU

Report:
1. Plot the I - V characteristics of MOSFET for 6 values of VGS on the graph paper.
2. Is the slopes of both the curves are same in the linear region? Pf not why?
3. Identify the Q-points on the graph paper and mention its value.
4. What is the value of IDSS.

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