HGTG20N60B3D

Data Sheet December 2001

40A, 600V, UFS Series N-Channel IGBT Features

with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC
The HGTG20N60B3D is a MOS gated high voltage
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input • Short Circuit Rated
impedance of a MOSFET and the low on-state conduction • Low Conduction Loss
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The • Hyperfast Anti-Parallel Diode
diode used in anti-parallel with the IGBT is the RHRP3060.
Packaging
The IGBT is ideal for many high voltage switching JEDEC STYLE TO-247
applications operating at moderate frequencies where low
E
conduction losses are essential. C
G
Formerly developmental type TA49016.

Ordering Information
PART NUMBER PACKAGE BRAND

HGTG20N60B3D TO-247 G20N60B3D

NOTE: When ordering, use the entire part number. COLLECTOR

(BOTTOM SIDE METAL)

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B

 HGTG20N60B3D

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG20N60B3D UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 600 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 40 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 165 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -40 to 150 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 , TC = 25oC - 1.8 2.0 V
VGE = 15V TC = 150oC - 2.1 2.5 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 3.0 5.0 6.0 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA SSOA TC = 150oC VCE = 480V 100 - - A
VGE = 15V, VCE = 600V 30 - - A
RG = 10Ω,
L = 45µH
Gate to Emitter Plateau Voltage VGEP IC = IC110 , VCE = 0.5 BVCES - 8.0 - V
On-State Gate Charge QG(ON) IC = IC110, VGE = 15V - 80 105 nC
VCE = 0.5 BVCES VGE = 20V - 105 135 nC
Current Turn-On Delay Time td(ON)I TC = 150oC, - 25 - ns
Current Rise Time trI ICE = IC110 - 20 - ns
VCE = 0.8 BVCES,
Current Turn-Off Delay Time td(OFF)I - 220 275 ns
VGE = 15V
Current Fall Time tfI RG = 10Ω,
- 140 175 ns
Turn-On Energy EON L = 100µH - 475 - µJ
Turn-Off Energy (Note 3) EOFF - 1050 - µJ
Diode Forward Voltage VEC IEC = 20A - 1.5 1.9 V
Diode Reverse Recovery Time trr IEC = 20A, dIEC/dt = 100A/µs - - 55 ns
IEC = 1A, dIEC/dt = 100A/µs - - 45 ns
Thermal Resistance RθJC IGBT - - 0.76 oC/W

Diode - - 1.2 oC/W

NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B

 HGTG20N60B3D

Typical Performance Curves

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

100 100
PULSE DURATION = 250µs VGE = 15V 12V VGE = 10V
DUTY CYCLE <0.5%, VCE = 10V
80 PULSE DURATION = 250µs
80 DUTY CYCLE <0.5%, TC = 25oC
TC = 150oC VGE = 9V
60 60

TC = 25oC VGE = 8.5V

40 40
-40ooC
TTCC == -40 C VGE = 8.0V

20 20 VGE = 7.5V
VGE = 7.0V
0 0
4 6 8 10 12 0 2 4 6 8 10
VGE , GATE TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

ICE , COLLECTOR TO EMITTER CURRENT (A)

50 100
PULSE DURATION = 250µs TC = 25oC
ICE , DC COLLECTOR CURRENT (A)

DUTY CYCLE <0.5%, VGE = 15V

40
80
VGE = 15V

30 60
TC = -40oC

20 40

TC = 150oC
10 20

0
0
25 50 75 100 125 150
0 1 2 3 4 5
TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 3. DC COLLECTOR CURRENT vs CASE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

TEMPERATURE
VCE , COLLECTOR TO EMITTER VOLTAGE (V)

5000
600 15
FREQUENCY = 1MHz

VGE , GATE TO EMITTER VOLTAGE (V)

CIES
4000 480 12
C, CAPACITANCE (pF)

VCE = 600V

3000
360 9

2000 VCE = 400V

240 6
COES
VCE = 200V
1000 120 TC = 25oC 3
Ig(REF) = 1.685mA
CRES
RL = 30Ω
0 0 0
0 5 10 15 20 25
0 20 40 60 80 100
VCE , COLLECTOR TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC)

FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 6. GATE CHARGE WAVEFORMS

VOLTAGE

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B

 HGTG20N60B3D

Typical Performance Curves (Continued)

100 500
TJ = 150oC, RG = 10Ω, L = 100µH TJ = 150oC, RG = 10Ω, L = 100µH

td(OFF)I , TURN-OFF DELAY TIME (ns)

td(ON)I , TURN-ON DELAY TIME (ns)

400

50 300
40 VCE = 480V, VGE = 15V
30
200
VCE = 480V, VGE = 15V

20

10 100
0 10 20 30 40 0 10 20 30 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURREN T EMITTER CURRENT

100 1000
TJ = 150oC, RG = 10Ω, L = 100µH
TJ = 150oC, RG = 10Ω, L = 100µH
trI , TURN-ON RISE TIME (ns)

tfI , FALL TIME (ns)

VCE = 480V, VGE = 15V

VCE = 480V, VGE = 15V

10 100

1 10
0 10 20 30 40 0 10 20 30 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

1400 2500
TJ = 150oC, RG = 10Ω, L = 100µH TJ = 150oC, RG = 10Ω, L = 100µH
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON , TURN-ON ENERGY LOSS (µJ)

1200
2000
1000

800 1500
VCE = 480V, VGE = 15V

600 VCE = 480V, VGE = 15V

1000

400
500
200

0 0
0 10 20 30 40 0 10 20 30 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B

 HGTG20N60B3D

Typical Performance Curves (Continued)

ICE , COLLECTOR TO EMITTER CURRENT (A)

500
TJ = 150oC, TC = 75oC, VGE = 15V 120
fMAX , OPERATING FREQUENCY (kHz)

RG = 10Ω, L = 100mH TC = 150oC, VGE = 15V, RG = 10Ω

100
VCE = 480V
80
100

60
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON +EOFF)
40
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%) 20
RθJC = 0.76oC/W
10 0
5 10 20 30 40 0 100 200 300 400 500 600 700
ICE , COLLECTOR TO EMITTER CURRENT (A) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 14. SWITCHING SAFE OPERATING AREA
EMITTER CURREN T

100 0.5
ZθJC , NORMALIZED THERMAL

0.2
0.1
10-1
0.05
RESPONSE

t1
0.02
PD
0.01
10-2 t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-5 10-4 10-3 10-2 10-1 100 101
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

100 50
TC = 25oC, dI EC/dt = 100A/µs
IEC , FORWARD CURRENT (A)

80 40 trr
tr, RECOVERY TIMES (ns)

150oC

60 30
ta
100oC
40 20
tb
25oC
20 10

0 0
0 0.5 1.0 1.5 2.0 2.5 1 5 10 20
VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)

FIGURE 16. DIODE FORWARD CURRENT vs FORWARD FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
VOLTAGE DROP

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B

 HGTG20N60B3D

Test Circuit and Waveform

L = 100µH 90%

RHRP3060 10%
VGE

EOFF EON
RG = 10Ω VCE

+ 90%

VDD = 480V 10%

- ICE
td(OFF)I trI
tfI
td(ON)I

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to Operating frequency information for a typical device (Figure 13)
gate-insulation damage by the electrostatic discharge of is presented as a guide for estimating device performance
energy through the devices. When handling these devices, for a specific application. Other typical frequency vs collector
care should be exercised to assure that the static charge built current (ICE) plots are possible using the information shown
in the handler’s body capacitance is not discharged through for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
the device. With proper handling and discharge procedures, frequency plot (Figure 13) of a typical device shows fMAX1 or
however, IGBTs are currently being extensively used in fMAX2 whichever is smaller at each point. The information is
production by numerous equipment manufacturers in military, based on measurements of a typical device and is bounded
industrial and consumer applications, with virtually no damage by the maximum rated junction temperature.
problems due to electrostatic discharge. IGBTs can be
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I td(ON)I).
handled safely if the following basic precautions are taken:
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept of the on- state time for a 50% duty factor. Other definitions
shorted together either by the use of metal shorting are possible. td(OFF)I and td(ON)I are defined in Figure 19.
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent. Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . td(OFF)I
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable is important when controlling output ripple under a lightly
means - for example, with a metallic wristband. loaded condition.
3. Tips of soldering irons should be grounded. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
4. Devices should never be inserted into or removed from allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
circuits with power on. The sum of device switching and conduction losses must
5. Gate Voltage Rating - Never exceed the gate-voltage not exceed PD . A 50% duty factor was used (Figure 13)
rating of VGEM . Exceeding the rated VGE can result in and the conduction losses (P C) are approximated by
permanent damage to the oxide layer in the gate region. PC = (VCE x ICE)/2.
6. Gate Termination - The gates of these devices are EON and EOFF are defined in the switching waveforms
essentially capacitors. Circuits that leave the gate open-
shown in Figure 19. EON is the integral of the instantaneous
circuited or floating should be avoided. These conditions
power loss (ICE x VCE) during turn-on and EOFF is the
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup. integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for EOFF ; i.e. the
7. Gate Protection - These devices do not have an internal
collector current equals zero (ICE = 0).
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.

©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
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DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4