ELECTRONIC DEVICES AND CIRCUITS – ASSIGNMENT QUESTIONS

UNIT -I: P-N Junction Diode, Special Purpose Electronic Devices

1. Explain about semiconductor, insulator and conductor with neat sketch. Explain n-type and p-type
semiconductors.
2. Explain the formation of depletion region in an open circuited p-n junction with neat sketches.
3. Explain the volt ampere characteristics of p-n diode. Explain about static and dynamic resistance
in p-n diode. Explain with necessary diagrams.
4. Explain the temperature dependence of V-I characteristics.
5. Explain about diffusion capacitance and transition capacitance
6. Write short notes on load line analysis of p-n diode…
7. Compare the characteristics of a p-n junction diode, zener diode and tunnel diode.
8. Explain the concept of tunneling with energy band diagrams.
9. Draw the circuit symbol of varactor diode and explain it.
10. Explain the principle of operation of schottky barrier diode.
11. Draw the two transistor version of an SCR and explain its firing characteristics with this circuit..
12. Write a short notes on semiconductor photo diode.
13. A diode operating at 300 k at a forward voltage of 0.4 v carries of 10 mA. When voltage is
changed to 0.42 V the current becomes thrice .calculate the values of reverse leakage current and
ƞ for the diode (assume Vt=26mV)..
14. A p-n junction diode has a reverse saturation current of 30µA at a temperature of 125 0C. At the
same temperature, find the dynamic resistance for 0.2V bias in forward and reverse direction..

UNIT-II: Rectifiers and Filters

1. What is rectifier? Explain the operation of half wave rectifier. Derive all the necessary
parameters.
2. What is rectifier? Explain the operation of Full wave rectifier. Derive all the necessary
parameters.
3. What is rectifier? Explain the operation of Bridge rectifier. Derive all the necessary parameters.
4. What is filter? Explain the operation of Capacitor filter; derive the expression for ripple factor.
5. What is filter? Explain the operation of Inductor filter; derive the expression for ripple factor.
6. What is filter? Explain the operation of L-C filter; derive the expression for ripple factor.
7. What is filter? Explain the operation of C-L-C filter; derive the expression for ripple factor.
8. Compare A) All the filter circuits B) All the rectifier circuits
9. A voltage of 200 coswt is applied to HWR with load resistance of 5 kΩ. Find the maximum D.C
current component, r.m.s current ,ripple factor, TUF and rectifier efficiency
 ELECTRONIC DEVICES AND CIRCUITS – ASSIGNMENT QUESTIONS

10. A diode whose internal resistance is 20Ω is to supply power to a 100 Ω load from 110 V
(r.m.s)source of supply .calculate 1)peak load current2)D.C load current 3)A.C load current 4)the
percentage regulation from no-load to the given load
11. A FWR circuit is fed from a transformer having a centre tapped secondary winding. The r.m.s
voltage from either end of secondary to centre tap is 30 V. If the diode forward resistance is 5Ω
and that of the secondary is 10Ω for a load of 900Ω. Calculate,1)power delivered to load 2)%
regulation at full load 3)efficiency at full load 4)TUF of secondary
12. A HWR circuit has filter capacitor of 1200 µF and is connected to a load of 400 Ω. The rectifier
is connected to a 50Hz , 120 Vr.m.s source. It takes 2msec for the capacitor to recharge during each
cycle. calculate the minimum value of the repetitive surge current for which the diode should be
rated
13. A 3 KΩ resistive load is to be supplied with a D.C voltage of 300 V from A.C voltage of adequate
magnitude and 50 Hz frequency by wave rectification. The LC filter is used along the rectifier.
Design the bleeder resistance, turns ratio of transformer, VA rating of transformer and PIV rating
of diodes
14. A FWR supplies a load requiring 300 V at 200 mA . calculate the transformer secondary voltage
for,1)a capacitor input filter using a capacitor of 10µF.2)a choke input filter using a choke of 10H
and a capacitance of 10µF.neglect the resistance of choke

UNIT-III: Bipolar Junction Transistor and UJT

1. Define a transistor. What are the different configurations of BJT? Explain.
2. With necessary diagrams explain the input and output characteristics of common emitter
configuration.
3. Explain the input and output characteristics of CC configuration with diagrams
4. With neat sketches explain the cut-off region, active region and saturation region of CB transistor
output characteristics.
5. Summarize the salient features of the characteristics of BJT operating in CB, CC, CE
configurations..
6. What is early effect? Write applications of transistors.
7. Define alpha, beta and gamma of transistors, derive the all relations.
8. Explain the construction of UJT. Explain the working principle of UJT with its characteristics.
9. Calculate the values of IE, βd.c and αd.c for a transistor with Ic=13 µA, IB=200 mA, ICBO=6µA.
Also determine the new level of Ic which will result from reducing IB to 100 mA.
10. Draw the circuit diagram of a saw tooth waveform generator using UJT and explain its operation.
 ELECTRONIC DEVICES AND CIRCUITS – ASSIGNMENT QUESTIONS

UNIT-IV: Transistor Biasing and Stabilization

1. What is the importance of d.c load line? What is the use of biasing?
2. Draw a BJT fixed bias circuit and derive the expression for the stability factors.
3. Draw a BJT collector to base bias circuit and derive the expression for the stability factors.
4. Draw a BJT self bias circuit and derive the expression for the stability factors.
5. Explain in detail about thermal run away and thermal resistance. What is the condition for thermal
stability?
6. What are the compensation techniques used for VBE and ICO?
7. Draw the low frequency small signal model of a transistor in CB, CC and CE configurations and
explain significance of each model.
8. Draw the low frequency equivalent circuit for a CC amplifier and derive the relations for the
voltage gain, current gain, input resistance in terms of h-parameters..
9. Draw the low frequency equivalent circuit for a CB amplifier and derive the relations for the
voltage gain, current gain, input resistance in terms of h-parameters..
10. Draw the low frequency equivalent circuit for a CE amplifier and derive the relations for the
voltage gain, current gain, input resistance in terms of h-parameters..
11. A germanium transistor having β=100 and VBE=0.2 V is used in a fixed bias amplifier circuit
where VCC=16 V , RC=5 k Ω, and RB=790 k Ω. Determine its operating point.
12. If the various parameters of the CE amplifier which uses the self bias method are V CC=12 V,
R1=10 kΩ , R1=10 kΩ R2=5 kΩ, Rc=1kΩ ,Re=2 kΩ and β=100. Find, 1)the coordinates of the
operating point and 2) the stability factor ,assuming the transistor to be of silicon
13. The h-parameters of a transistor used in a CE circuit are hre=10x10-4, hfe =50, hoe =100k . the load
resistance for the transistor is 1kΩ in the collector circuit .determine R i , Ro , Av and Ai in the
amplifier stage(assume Rs =1000Ω).
14. Find the values of hfb and hfc , if the value of hfe of a transistor is 50
15. A transistor is connected in CC configuration and its h-parameters are hre =2.5x10-4, hfe =50 , hoe
=24 mA/V,the circuit uses RL=10 kΩ, and Rs =1kΩ,calculate gain Ai, Ri , Av of this amplifier.
16. Find out stability factor of the circuit given below:
 ELECTRONIC DEVICES AND CIRCUITS – ASSIGNMENT QUESTIONS

17. For the circuit shown, determine the value of Ic and VCE. Assume VBE = 0.7V and = 100.
18. For the circuit shown, calculate VE, IE, Ic and Vc. Assume VBE = 0.7V.

19. Design a self-bias circuit for the following specifications. VCC = 12V, VCE = 2V, IC = 4mA, hfc
= 80.
20. A germanium transistor having β=100 and VBE=0.2 V is used in a fixed bias amplifier circuit
where VCC=16V, RC=5 k Ω, and RB=790 k Ω. Determine its operating point.
21. Calculate the d.c bias voltage and currents in the circuit shown in figure (neglect vbe of transistor)
If the various parameters of the CE amplifier which uses the self bias method are V CC=12 V,
R1=10 kΩ , R1=10 kΩ R2=5 kΩ, Rc=1kΩ ,Re=2 kΩ and β=100. Find, 1)the coordinates of the
operating point and 2) the stability factor ,assuming the transistor to be of silicon
22. Design a collector to base bias ckt using Si transistor to achieve a stability factor of 20, with the
following specifications Vcc=16V, Vbe=0.7V,VceQ=8v,IcQ=4mA, β=50.
23. Deign a self bias ckt using Si transistor to achieve a stability factor of 10, with the following
specifications Vcc=16V, Vbe=0.7V,VceQ=8v,IcQ=4mA, β=50.
24. Deign a self bias ckt with the following specifications Vcc=12V,Vce=2V,Ic=4mA, hfe=80.
Assume any other design parameter is required and draw the design ckt.

UNIT-V: Field Effect Transistor and FET Amplifiers

1. Draw the structures of an n-channel JFET and explain its principle of operation.
2. With a neat sketch explain the drain source characteristics and transfer characteristics of
enhancement type MOSFET.
3. Explain the principle of MOSFET in depletion layer with neat sketches and output characteristics.
4. Sketch the circuit symbols for ,1) n-channel JFET 2)p -channel JFET 3)n -channel enhancement
type MOSFET 4) p -channel enhancement type MOSFET 5) n -channel depletion type
MOSFET 6) p -channel depletion type MOSFET and compare JFET and MOSFETs..
5. What are the differences between bipolar junction transistor and field effect transistor?
6. Draw the static characteristics curves of an n-channel JFET and explain the different portions of
the characteristics define the pinch-off voltage and indicate its location on drain characteristics.
 ELECTRONIC DEVICES AND CIRCUITS – ASSIGNMENT QUESTIONS

7. Draw the small signal equivalent circuit of common source FET amplifier and derive the
equation for voltage gain , input and output impedances..
8. Draw the circuit diagram if common drain amplifier and derive expressions for voltage gain and
input resistance.
9. Draw the small signal equivalent circuit of Common Gate amplifier and derive the equation for
voltage gain , input and output impedances.
10. When a reverse gate voltage of 12V is applied to JFET the gate current is 1nA, determine the
resistance between gate and source.
11. A FET has a driven current of 4mA, if I DSS=8mA, VGS(off)=-6V. find the values of VGS and Vp.
12. An n-channel JFET has IDSS=8mA, Vp=-5V. Determine the minimum value of VDS for pinch-off
region and the drain current IDS for VGS=-2V.
13. The max transconductance of FET is 10mA/V, drain current when VGS=0 is 20mA. Find pinch-
off voltage of FET.
14. For JFET, if IDSS=20mA, VGS(off)=-5V, gmo=4ms, find transconductance for VGS=-4V and find
ID at this point.