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Basic Overview of Analog Electronics

This document provides an overview of analog electronics and semiconductor diodes. It discusses the basic structure of diodes, including the p-n junction, depletion region, and ideal diode characteristics. The key points covered are: 1) Diodes have a nonlinear current-voltage relationship that allows them to conduct current in only one direction due to the formation of a p-n junction between differently doped semiconductor materials. 2) The p-n junction creates a depletion region that acts as an electrical barrier, only being overcome at forward bias voltages above 0.7V. 3) The ideal diode characteristics show it conducts rapidly above 0.7V forward bias but blocks all current in reverse bias, and this
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0% found this document useful (0 votes)
108 views

Basic Overview of Analog Electronics

This document provides an overview of analog electronics and semiconductor diodes. It discusses the basic structure of diodes, including the p-n junction, depletion region, and ideal diode characteristics. The key points covered are: 1) Diodes have a nonlinear current-voltage relationship that allows them to conduct current in only one direction due to the formation of a p-n junction between differently doped semiconductor materials. 2) The p-n junction creates a depletion region that acts as an electrical barrier, only being overcome at forward bias voltages above 0.7V. 3) The ideal diode characteristics show it conducts rapidly above 0.7V forward bias but blocks all current in reverse bias, and this
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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KNR1053 ANALOG ELECTRONICS

BASIC OVERVIEW OF ANALOG ELECTRONICS


Abd Hafiz Abd Karim
Faculty of Engineering (JKEE)
ELECTRONICS
ELECTRONIC DEVICES
ELECTRONIC SYSTEMS
Overview

• Diodes
• Transistor (BJT)
• Transistor (FET)
Semiconductor Diode
1.1
Each shell corresponds to certain
energy level – separated by energy
gaps

This condition occurs only at 0 Kelvin


At room temperature – gain sufficient
heat (thermal energy) – valence electrons
able to jump from valence band to
conduction band – free electron

Electron move to conduction band,


one hole left in the valence band

A vacancy is left in the valence band


within the crystal - hole
Number of electron
jump into the
conduction band =
number of hole left in
the valence band
The n stands for negative charge
on an electron
P-N JUNCTION
The basic diode structure at the instant of junction formation showing
only the majority and minority carriers
Energy diagrams illustrating the formation of pn junction and depletion
region
IDEAL DIODE
Introduction

• The diode is the simplest and most fundamental


nonlinear circuit element.
• Just like resistor, it has two terminals.
• Unlike resistor, it has a nonlinear current-voltage
characteristics.
• Its use in rectifiers is the most common application.

65
Physical Structure

The most important region, which is called pn junction, is the boundary


between n-type and p-type semiconductor.

66
Symbol and Characteristic
for the Ideal Diode

(a) diode circuit symbol; (b) i–v characteristic; (c) equivalent circuit in the
reverse direction; (d) equivalent circuit in the forward direction.

67
Characteristics

• Conducting in one direction and not in the other


is the I-V characteristic of the diode.
• The arrowlike circuit symbol shows the direction
of conducting current.
• Forward biasing voltage makes it turn on.
• Reverse biasing voltage makes it turn off.

68
V-I Characteristic for Forward Bias

Dcbias the application of a dc voltage to a • 0V across the diode= NO FORWARD CURRECT


• Gradually increase = forward current and voltage across diode
diode, transistor and others to produce a increase
desired mode operation • Barrier potential 0.7V , current increase rapidly
I-V Characteristics:
Non ideal
DC Load Line
DC Load Line
Effect of Rload and Vs on DC load line
Q-point

• The operating point or Q point of the diode is the


quiescent or no-signal condition. The Q point is
obtained graphically and is really only needed when
the applied voltage is very close to the diode’s barrier
potential voltage

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