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Field Effect Transistors: Dr. SK Wijayasekara

- Field Effect Transistors (FETs) and Bipolar Junction Transistors (BJTs) are both commonly used as amplifiers and switching devices, but differ in their operating characteristics. FETs are voltage-controlled devices while BJTs are current-controlled. - The two main types of FETs are JFETs and MOSFETs. JFETs have three terminals - drain, source, and gate. Current flow between drain and source is controlled by the voltage at the gate terminal. - In an n-channel JFET, increasing the negative voltage at the gate terminal pinches off the n-channel, decreasing the current flow from drain to source. This

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41 views18 pages

Field Effect Transistors: Dr. SK Wijayasekara

- Field Effect Transistors (FETs) and Bipolar Junction Transistors (BJTs) are both commonly used as amplifiers and switching devices, but differ in their operating characteristics. FETs are voltage-controlled devices while BJTs are current-controlled. - The two main types of FETs are JFETs and MOSFETs. JFETs have three terminals - drain, source, and gate. Current flow between drain and source is controlled by the voltage at the gate terminal. - In an n-channel JFET, increasing the negative voltage at the gate terminal pinches off the n-channel, decreasing the current flow from drain to source. This

Uploaded by

saumya irugalbandara
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Field Effect Transistors

LECTURE 9
DR. SK WIJAYASEKARA
FETs vs. BJTs

Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits

Differences:
• FETs are voltage-controlled devices. BJTs are current controlled
devices.
• FETs have a higher input impedance. BJTs have higher gains.
• FETs are less sensitive to temperature variations and are more easily
integrated on ICs.
• FETs are generally more static sensitive than BJTs.
JFET Construction
There are two types of JFETs

•n-channel
•p-channel

The n-channel is more widely used.

There are three terminals:

•Drain (D) and Source (S) are connected to the n-channel


•Gate (G) is connected to the p-type material
JFET Operation: The Basic Idea
n-Channel JFET Symbol
JFET Operating Characteristics: VGS = 0 V
Three things happen when VGS = 0 and VDS is increased from 0 to a more positive
voltage

• The depletion region between p-gate and n-


channel increases as electrons from n-
channel combine with holes from p-gate.

• Increasing the depletion region, decreases


the size of the n-channel which increases the
resistance of the n-channel.

• Even though the n-channel resistance is


increasing, the current (ID) from source to
drain through the n-channel is increasing.
This is because VDS is increasing.
JFET Operating Characteristics: Pinch Off
If VGS = 0 and VDS is further increased to a more
positive voltage, then the depletion zone gets so large
that it pinches off the n-channel.

This suggests that the current in the n-channel (ID)


would drop to 0A, but it does just the opposite–as VDS
increases, so does ID.
JFET Operating Characteristics: Saturation
At the pinch-off point:

• Any further increase in VDS does not


produce any increase in ID. VDS at
pinch-off is denoted as Vp.

• ID is at saturation or maximum. It is
referred to as IDSS.

• The ohmic value of the channel is


maximum.
As VGS becomes more negative, the depletion
region increases.
JFET Operating Characteristics

As VGS becomes more negative:

• The JFET experiences


pinch-off at a lower voltage
(VP).

• ID decreases (ID < IDSS) even


though VDS is increased.

• Eventually ID reaches 0 A.
VGS at this point is called Vp
or VGS(off)..
Ohmic Region - Voltage-Controlled Resistor

The region to the left of the


pinch-off point is called the
ohmic region.

The JFET can be used as a


variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS becomes
more negative, the resistance
(rd) increases.
ro
rd 
2
 V 
 1  GS 
 VP 
p-Channel JFETS

The p-channel JFET behaves the


same as the n-channel JFET,
except the voltage polarities and
current directions are reversed.
p-Channel JFET Characteristics

As VGS increases more positively

• The depletion zone


increases
• ID decreases (ID < IDSS)
• Eventually ID = 0 A

Also note that at high levels of VDS the JFET reaches a breakdown situation: ID
increases uncontrollably if VDS > VDSmax.
JFET Transfer Curve
The transfer characteristic of input-to-output is not as
straightforward in a JFET as it is in a BJT.

In a BJT,  indicates the relationship between IB (input)


and IC (output).

In a JFET, the relationship of VGS (input) and ID (output)


is a little more complicated:

2
 V 
I D  I DSS  1  GS 

 VP
 
MOSFETs

MOSFETs have characteristics similar to JFETs and additional


characteristics that make then very useful.

There are two types of MOSFETs:

• Depletion-Type
• Enhancement-Type
MOSFET Construction
The Drain (D) and Source (S) connect
to the to n-doped regions. These n-
doped regions are connected via an n-
channel. This n-channel is connected to
the Gate (G) via a thin insulating layer
of SiO2.

The n-doped material lies on a p-doped


substrate that may have an additional
terminal connection called Substrate
(SS).
Thank You

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