Handout 2 For EE-203 Bipolar Junction Transistor (BJT) Sheikh Sharif Iqbal
Handout 2 For EE-203 Bipolar Junction Transistor (BJT) Sheikh Sharif Iqbal
C C
Collector
Emitter B B
E E
Base
Fig 5.3: Forward current flow in an NPN transistor biased to operate in the active mode
(Very small reverse current, due to drift of thermally generated
minority carriers, are not shown.)
• The EMITTER is heavily doped and have high density of electrons. But the
base is thin, lightly doped and has low density of holes. So, the current flow (iE)
between the forward biased emitter-base junction is mainly due to electronics
flowing from emitter to base. This process emits free electrons into the base.
• Among the emitted electrons in BASE, around 5% recombines with available
holes and escapes into external base lead as iB2, (iB=iB1+iB2 Î iB1 is due to majority holes)
Remaining 95% base electrons acts as a minority carriers and are swept away to
collector region by the electric field of reverse biased collector-base junc. (fig)
• These electrons are then collected by more positive collector terminal that
constitute collector current (ic). THUS: (iE) = (iB) + (iC)
Base Collector
Reversed Biased C. B. J
The Collector Current (iC): Base Current (iB): Emitter Current (iE):
v BE v BE
V T iC IS VT
i C I S⋅e iB ⋅e iE = iC + iB
β β
Note that the PNP transistors have VEB ; whereas the NPN transistors has VBE
5.2.3: Dependence of current, voltage, temperature and the Early Effect:
0.7v
Q-point
+ swing
(See figure 5.26)
Solution:
- Assume Active Mode
of operation Î VBE=0.7
n
p
Solve
- Since CBJ is RB,
examples 5.4 to 5.12 - Initial assumption was correct
5.5: Biasing single stage BJT Amplifiers: - Operating point or Q-point (iC and vCE)
Assume
Active mode
4.75v
Two supply Biasing
VCE=3.57 v
Exercises BJT-3
Exercises BJT-3:
DC AC
equivalent equivalent
circuit Î circuit Î
5.6.6 and 5.6.7: Small-Signal Equivalent Circuit Models:
(a) (b)
Two different versions of simplified hybrid-Π model for the small-signal operation of the BJT.
(a) represents the BJT as a voltage-controlled current source ( a transconductance amplifier)
(b) represents the BJT as a current-controlled current source (a current amplifier).
IC
IB VC
VB
β
IE
VE
Lets assume the BJT is operating in Active Mode. Thus, IC= α.IE , IC= β.IB and α=β/(β+1)
Since IE = I mA ; IB = IE / (β+1) mA ; VB = 0 - IB.RB ; VE = VB - 0.7 ;
Now IC= α.IE = (β.IE) / (β+1) ; VC = VCC - IC.RC and if CBJ remains RB then assumption is OK
Exercise-5: Find the operating point if VCC=VEE=10V, RC=8 kΩ, RB=100 kΩ, I=1mA & β=100
Solution: Q or operating point is, IC=0.99 mA ; VCE=0.3 v (as VB= -1v, VC = 2v, VE = -1.7v)
5.7.3:Common emitter Amplifier: AC analysis to find Gain, Input & output Impedances
Remember,
r0=|VA|/IC
gm=IC/VT
rπ=VT/IB
Exercise-6: Find Rin ,Rout ,Av & Gv; if Rsig=RL=5kΩ, RB=100k, RC=8k; IC=1mA, IB=0.01mA, VA=100V, VT=25mV
Solution: Ri=2.43 kΩ; Rout=7.4 kΩ, Av=-119 V/V, Gv=-39 V/V (as rπ=2.5K, gm=40 mA/V, r0=100k)
Review of CE amp:
- S/C DC voltage source
- O/C DC current source
Find model
parameters
(rπ, re, gm)
Exercises-7:
Exercises-8:
Exercise-9: Find the operating point if VCC=VEE=10V, RC=8 kΩ, RB=100 kΩ, I=1mA & β=100
Solution: operating point, IC=0.99 mA ; VCE=3.7 v (as IE=1mA ; VB= -1v, VC = 2v, VE = -1.7v)
AC analysis
; Remember, gm=IC/VT
DC analysis
AC analysis: For the AC equivalent circuit given in the figure in the next page,
5.7.5:Common Base (CB) Amplifier: Low Zin makes it not good voltage amplifier
AC analysis
β=100
Hints: Draw the DC and AC (using T-model) equivalent circuits (as shown in figure)
The DC solutions are also shown in figure (b). Calculated Î re = 27 Ω
The Gain of the circuit, calculated from figure (c) is, Av= vo/vi = 183.3 V/V
5.7.5:Common Collector (CC) Amplifier: Emitter Follower
DC analysis Assume Active Mode.
IE=I mA; IB=IE/(β+1)mA
VB =0–(IB)(RB) ;
VE=VB - 0.7 ;
IC=α.IE = (β.IE)/(β+1) ;
VC = VCC
if CBJ remains RB
then assumption is OK
Base to Emitter
Exercises-12
Gv
Gv
Exercise-14: For the following circuits, find the expressions for Rin , Rout ,Av