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Band Gap

This document contains instructions for determining the band gap of a semiconductor. It provides: 1) An overview of the procedure which involves measuring the reverse saturation current of a point contact diode at different temperatures and plotting it on a graph. 2) Background theory on semiconductor band structure and how increasing temperature allows electrons to move between bands, enabling conduction. 3) Formulas showing the relationship between saturation current, temperature, and band gap energy, which allows the band gap to be calculated from the slope of the current-temperature graph. 4) Steps for carrying out the experiment, including taking current and temperature readings while heating the diode and constructing the required graph to find the slope and band gap.

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Amoga Lekshmi
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211 views6 pages

Band Gap

This document contains instructions for determining the band gap of a semiconductor. It provides: 1) An overview of the procedure which involves measuring the reverse saturation current of a point contact diode at different temperatures and plotting it on a graph. 2) Background theory on semiconductor band structure and how increasing temperature allows electrons to move between bands, enabling conduction. 3) Formulas showing the relationship between saturation current, temperature, and band gap energy, which allows the band gap to be calculated from the slope of the current-temperature graph. 4) Steps for carrying out the experiment, including taking current and temperature readings while heating the diode and constructing the required graph to find the slope and band gap.

Uploaded by

Amoga Lekshmi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Band Gap of Semiconductor (BG)

Name: ID No.:

Expt. No.: Branch/Sec.: Date:


---------------

Determine the band gap energy of the given semiconductor using standard
procedure.
Marks Distribution

Headings Max.Marks Marks Obtained

Pre Lab preparation


Knowledge of Procedure (video) 10

Observation 15

Graph 10

Calculation 10
________________________________________________
Result 05

Total 50

Staff signature with date


BAND GAP OF SEMICONDUCTOR

Aim:

To determine the band gap energy of the given semiconductor by studying the variation
of reverse saturation current of point contact diode with temperature.

Apparatus Required

Point contact diode, ammeter, thermometer & Oven for heating.

Formula

Energy Gap, Eg = 0.198 x Slope of straight line from graph in eV

 logIs 
= 0.198 x in eV

 10
3

T 
where Is = Saturation current (µA); T = Absolute Temperature (K)

Theory

A semiconductor has the energy band structure similar to an insulator with the forbidden
energy gap less than 2 eV. For germanium the, energy gap is 0.7 eV and that for silicon it
is 1.1 eV at 0 K. Energy of this magnitude cannot be imparted to an electron by an
applied electric field. Hence the valance band remains full and conduction band empty.
Thus these substances are nearly insulators at room temperatures.

If the temperature is increased some of the valance electrons may gain enough thermal
and move into the conduction band. Now these free electrons can move through the
crystal under the action of a small electric field. When an electron moves from the
valance band to the conduction band an electron vacancy is created in the valance band.
This is called as a Hole. When some of the electrons move from the valance into the
conduction band, equal number of holes are created in the valance band. Therefore
conduction is possible in the valance band too.
The current flowing through a diode in the reverse bias condition is

eV
I = {Is exp ( )} - 1 (1)
kT

where Is is the saturation current.


 eV
Is = A exp ( ) (2)
kT

Eg
 log Is = log A - (3)
2.303  kT

Substituting for k as 8.616 x 10-5 eV/K, we have

Eg
log Is = log A -
2.303  8.616  10 5  T

 log Is = log A -
Eg
0.198
10 T  3
(4)

As the saturation current is in μA, rewriting eqn. (4) with saturation current in amperes,
we get

log (Is x 10-6) = log A -


Eg
0.198
10 T  3

 log Is + log 10-6 = log A -


Eg
0.198
10 T 
3

log Is – 6 = log A -
0.198
10 T 
Eg 3

0.198  T
E 3
log I = log A + 6 -
s 10 g

 log Is = A’ -
Eg
0.198 10 T 
3
where A’ = log A + 6 a constant.
A graph of log Is along y-axis versus 103/T along x-axis will be a straight line with a
negative slope.
Eg
The slope = (in K)  Eg = 0.198 x Slope in eV
0.198

  logIs 
The slope from the graph is in K .

 10
3

T 

log Is

103/T (K-1)

Procedure

The given thermometer is inserted into the oven. The reverse biased PN junction circuit
and the oven is switched on. When the current reaches around 48 µA, the oven is
switched off. Thereafter, the temperature is noted for every 5 µA fall in current from 45
µA to 15 µA.A graph is drawn between 103/T on the x- axis and log Is on the y-axis. The
slope of the line is determined and substituted in the formula for band gap.
Observation:

Temperature
Current Is Temperature (t) 103 / T
T = 273 + t log Is
in µA in centigrade in K-1
in K

Calculation:

 (log Is )
The slope from graph = =
 (10 3 / T )

Band gap energy Eg = ( 0.198 x _______ ) eV

Result

The band gap energy of the given semiconductor is found to be ___________

Signature of the Faculty Incharge


WORKSHEET

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