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Energy BandGap Determination

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34 views6 pages

Energy BandGap Determination

Uploaded by

dragulblack
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Model Graph:

1000/T K-1

log Is
∆log Is

∆(1000/T)

45
DETERMINATION OF BAND GAP OF A SEMICONDUCTOR
MATERIAL
EXPT.NO: DATE:
Aim :
To determine the band gap/Forbidden energy gap of a semiconductor
material by using the variation of reverse saturation current of a diode at
any temperature.
Apparatus required:
 Diode (semi conductor)
 Heading arrangement.
 Ammeter.
 Voltmeter
 Thermometer.
Formula:
Band gap energy Eg =0.198xslope eV

Slope = ∆log Is
∆(1000/T)

Symbol Explanation Unit


Is Saturation current µA
T Temperature K
Procedure:
1. Solder the diode terminals to a long wire and connect the wire as
shown in the figure.
2. Immerse the diode in the oil bath and keep the oil bath in the heating
mantle.
3. Also immerse the thermometer in the oil bath such that the mercury
bulb is just close to the diode.
4. Switch on the power supply and adjust the voltage to constant value
say 5 volt .
5. Also switch on the heating mantle & heat the oil bath up to 90oC

46
Table 1 : Measurement of current for various temperature

Input Voltage =

Temperature 1000
Is Log Is
S.No T
C
o K (x10-6 A) (A)
K-1
01

02

03

04

05

06

07

08

09

10

11

12

13

14

15

47
6. Switch off the heating mantle when the temperature reaches 90 oC.
The current through the diode is noted in the micrometer for the
temperature 90 oC . Then allow the oil to cool.

7. The current through the diode decreases as the temperature decreases.

8. Record the current through the diode corresponding to each 1 oC fall


of temperature ( 89 oC,88 oC,87 oC,86 oC ….etc)

9. Draw the graph by taking 1000/T along X-axis and log Is along
negative Y axis [since Is is in the order of µA, log Is will be a negative
value], straight line will be obtained.

10.By finding the slope of the straight line the band gap energy can be
determined using the equation.

Eg = 0.198xslope eV

3. Repeat the experiment for various constant power supplies say 4


volts, 5 volts etc.

48
Calculation

Band gap energy Eg = 0.198 x slope eV

Slope = ∆log Is
∆(1000/T)

49
Result
Band gap (Eg) of the semiconducting diode =__________ eV

VIVA VOCE
1. What is energy gap?
The separation of energy between the valence and conduction band
is called the energy gap or forbidden energy gap.
2. What is Fermi energy level?
The maximum filled energy level at 0 k is called Fermi
energy level. This is also defined as the state at which the probability of
electron occupation is half at any temperature above zero Kelvin.
3. What is the principle used for band gap determination?
At 0K, Semiconductor behaves as an insulator. When the
temperature is increased, some of the valence electrons gains thermal
energy and it moves towards the conduction band. Therefore, it constitutes
some current flow through the semiconductor. This is the principle used for
band gap determination in semiconductor.
4. What are the different types of the semiconductors?
There are two types,
i) Pure semiconductor or intrinsic semiconductor
ii) Impure semiconductor or extrinsic
semiconductor.
5. What are the intrinsic semiconductors?
Intrinsic semiconductors are in pure form. These materials are
having an energy gap of the order of 1 eV . Charge carriers are generated
due to breaking of covalent bonds.
Examples: Germanium and silicon.
6. What are extrinsic semiconductors?
Extrinsic semiconductors are in impure form, in which the
charge carriers originate form impurity atoms with the materials. This is
called an extrinsic semiconductor.
Examples: Gallium arsenide
7. What are effects when we add the impurities with the pure
semiconductors?
The addition of impurities increases the carrier
concentrations and hence the conductivity of the semiconductor.

50

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