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Ideal: EE 233/51 Midterm 2 Spring 2017 Name: ID: There Are 15 Points in The Exam. Problem 1 (9 Points)

The document is a midterm exam for an electronics engineering course. It contains two main problems. Problem 1 involves calculating various parameters for an amplifier circuit, including input resistance, voltage gain, and output resistance. Problem 2 involves calculating current and voltage for forward and saturated bipolar junction transistor circuits. A bonus problem calculates the beta value for a given pnp transistor circuit. The document also includes a cheat sheet listing various physical constants and equations commonly used in electronics.

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58 views5 pages

Ideal: EE 233/51 Midterm 2 Spring 2017 Name: ID: There Are 15 Points in The Exam. Problem 1 (9 Points)

The document is a midterm exam for an electronics engineering course. It contains two main problems. Problem 1 involves calculating various parameters for an amplifier circuit, including input resistance, voltage gain, and output resistance. Problem 2 involves calculating current and voltage for forward and saturated bipolar junction transistor circuits. A bonus problem calculates the beta value for a given pnp transistor circuit. The document also includes a cheat sheet listing various physical constants and equations commonly used in electronics.

Uploaded by

DodyAboDodda
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ECE-Kuwait University Dr. A.

Al-Omar
EE 233/51 Midterm 2 Spring 2017

Name: Ideal ID:

There are 15 points in the exam.


Problem 1 (9 points):
IE = 0.777 mA for the following amplifier Calculate r , ro, Rin, and the voltage gain
Av=vo/vs. ( = 50, and VA = 20 V)
r = 1.697 k r = 26.26 k

Av= 0.6289 Rin= 21.09 k

IE 0.777
IB    0.01524 mA
1   1  50
V 25.85 mV
r  therm   1.697 k  (1  pts )
IB 0.01524 mA
VA VA 20
ro     26.26 k  (1  pts )
I C  I B 50  0.01524
For the voltage gain we calculate both vo and vs in terms of ib
vo  1    ib  ro RE RL 
100
vth  vs  0.9vs
10  100
Rth  10 ||100  9.09 k 
0  vth  ib Rth  ib r  1    ib  ro RE RL  ( KVL) (4 pts)

0.9vs  ib Rth  ib r  1    ib  ro RE RL 
vo 1    ib  ro RE RL  51 26.26 1 1
Av   0.9  0.9  0.6289
vs Rth  r  1     ro RL  9.09  1.697  51 26.26 1 1
Using test current of 1 A for the input resistance R*
Ri  100 || R*
itest  ib  1  vb  ib r  1    ib  ro RE RL 
ib r  1    ib  ro RE RL 
R*   r  1     ro RE RL  (2 pts)
ib
 1.697  51 26.26 1 1  26.72 k 

Ri  100 || R*   26.721  1001   21.09 k 


1

(1 pts)

Dr. Al-Omar 22-Apr-2017 ECE-Kuwait University


2

Problem 2 (6 points):
A) The following npn BJT has  = 80. Find IB, and VCE
IB = 0.01098 mA VCE = 3.5 V
Forward active BJT
R2 24
Vth  VCC  9  1.8V (1/ 2  pts )
R1  R2 96  24
Rth  R1 || R2  96 || 24   96 1  24 1   19.2 k 
1
(1/ 2  pts )
0  Vth  I B Rth  0.7  1    I B RE ( KVL)
Vth  0.7 1.8  0.7
IB    0.01098 mA (2  pts )
Rth  1    RE 19.2  1  80 
VCE  9   I B RC  1    I B RE  9  0.01098  80  5.25  81
 3.5V (1  pts )

B) RC was changed to 10 k, Find IB, and VCE


IB = 0.01492 mA VCE = 0.2 V
Saturated BJT (use super-node at B-E-C
VCE  0.2 V (1/ 2  pts )
VB  Vth VB  0.7 VB  0.5  9
0  
Rth RE RC
VB  1.8 VB  0.7 VB  0.5  9
0  
19.2 1 10
 1 1 1.8 0.7 9.5
  1   VB   
 19.2 10  19.2 1 10
1.74375
VB   1.514 V (1  pts )
1.1521
1.8  1.514
IB   0.01492 mA (1/ 2  pts )
19.2
3

Bonus Problem 3 (2 points):


Find  for the following pnp transistor
 = 10.63
54
IE   0.5 mA
2
VC  RC  I B  I C   5  RC I E  8  0.5  5  1V
VEC  4  1  5V
IE
VEC  I B RB  0.7  RB  0.7 ( KVL)
1 
I E RB
1  
VEC  0.7
I E RB 0.5 100
 1   1  10.63 (2  pts )
VEC  0.7 5  0.7
4

Cheat Sheet
Physical Constants: For Si
q  1.602 1019 C ,  0  8.854 10 14 F / cm , ni  1.45 1010 cm 3 , Eg  1.124 eV
kT
N C  2.8 1019 cm 3 , NV  1.04 1019 cm 3 , VT   25.85mV
q T  300 K

for majority carriers  n  1500 cm 2 /(V -s) , and  p  475 cm 2 /(V-s)


Carrier Concentration:
pn  ni2
for homogeneous semiconductor p  n  N d  N A  0
2
N   N A  N   N A  ni2
for n-type material n  D   D   ni ,
2
p
2  2  n
l
conductivity   q  n n  q  p p Resistance R 
A
BJT transistor
Parameters for small signal model
V V V 
r  T  T , r0  A , T 
IC IB IC r  C  C 
MOS transistor
The I-V characteristics for NMOS transistor is given by:

0 VGS  VT cut  off

  V 
I D VGS ,VDS   k  VGS  VT  DS VDS VGS  VT and VDS  VGS  VT triode
  2 
1
 k VGS  VT 
2
VGS  VT and VDS  VGS  VT saturation
2
W W
where k  k   nCox ,
L L
V gm
Small signal parameters g m  2kI D , r0  A , T 
ID CS  C D
Diode

 VV 
I-V characterisitcs I D (V )  I S  e T  1
 
 
VT
rd 
ID
Rectifier ripple voltage
V pT
Half wave vr 
RC
V pT
Full wave vr 
2 RC
5

VCE > 0.2 V VEC > 0.2 V

NPN PNP

Large signal model for BJT

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