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10 - 05 - 2022 PH3259 Set-A

This document provides information for an internal assessment test in Applied Materials Science. It includes details like the subject name, code, date, timing, and maximum marks. It lists 5 course outcomes related to understanding crystallography, phase relationships, material properties, semiconductors, and optical devices. The test contains 2 parts - Part A with 10 short answer questions worth 2 marks each related to the course outcomes, and Part B with 5 long answer questions worth 16 marks each. The questions cover topics like crystal structures, dislocations, semiconductors, Hall effect, and Fermi levels. Bloom's taxonomy is provided to indicate the cognitive level expected for each question.

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816 views2 pages

10 - 05 - 2022 PH3259 Set-A

This document provides information for an internal assessment test in Applied Materials Science. It includes details like the subject name, code, date, timing, and maximum marks. It lists 5 course outcomes related to understanding crystallography, phase relationships, material properties, semiconductors, and optical devices. The test contains 2 parts - Part A with 10 short answer questions worth 2 marks each related to the course outcomes, and Part B with 5 long answer questions worth 16 marks each. The questions cover topics like crystal structures, dislocations, semiconductors, Hall effect, and Fermi levels. Bloom's taxonomy is provided to indicate the cognitive level expected for each question.

Uploaded by

ohmshankar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Reg No.

Agni College of Technology


Thalambur, Chennai 600 130
Office of Examcell
Internal Assessment Test-I
Sub Name: Applied Materials Science Set : A
Sub Code : PH3259 Department: MHT & MAE
Date: 10-05-2022 Year &Sec: I&D
Timing: 12:45 PM to 3:45 PM Max Mark: 100 Marks
Course Outcome:
CO1 Know basics of crystallography and its importance for varied materials properties.
CO2 Understand the properties of materials through the study of phase relationships.
CO3 Gain knowledge on the electrical and magnetic properties of materials and their applications

CO4 Understand clearly of semiconductor physics and functioning of semiconductor devices


CO5 Understand the optical properties of materials and working principles of various optical devices.

Bloom’s Taxonomy:C-Create, E-Evaluate, AN-Analyze, AP-Apply, U-Understand,R-Remember.


PART – A (10 x 2 = 20 Marks) BT CO

1. What is meant by primitive and Non-primitive Cell? Give an example. AN CO1

2. What is meant by dislocation in crystal? AN CO1

3. Define polymorphism. R CO1

4. Define planar densities in crystal R CO1

5. Write short notes about the burger vector. U CO1

6. What are the differences between elemental and compound AN CO4


semiconductors?
7. What are the properties of semiconductors? R CO4

8. Write an expression for the concentration of electrons and holes in R CO4


intrinsic semiconductors.
9. Mention the location of Fermi energy level in intrinsic, N-type and P- U CO4
type semiconductor at 0K
10. Define hall effect. R CO4

PART – B (5x 16= 80Marks)


11. (a) Show that the packing factor of FCC and HCP is same. [16] U CO1
(or)
(b) Explain the atomic radius, coordination number and number of [16] A CO1
atom in SC, BCC and FCC system with neat diagram. P
12. (a) Write short notes on i).edge and screw dislocations, ii).grain and [16] A CO1
twin boundaries. P
(or)
(b) Describe the homogeneous and heterogeneous nucleation [16] R C01

13. (a) (i). Explain the elastic strain energy in solids [8] A CO1
N
(ii). Explain plastic deformation of materials [8] A CO1
N
(or)
(b) Derive an expression for the carrier concentration of electrons [16] A CO4
and holes in intrinsic semiconductor. P

14. (a) Explain the hall effect in n-type semiconductor. [16] U CO4
(or)
(b) Derive the equation for carrier concentration in p-type and show [16] A CO4
that the Fermi level at 0K lies at the middle of acceptor energy N
level and the top level of valence band

15. (a) Obtain an expression for density of electrons in the conduction [16] A CO4
band of n-type semiconductor and explain about its Fermi level N
at 0K.
(or)
(b) Discuss the variation and behaviour of Fermi level in an n-type [16] A CO4
and p-type semiconductor with temperature and concentration of N
impurities.

***********

[2]

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