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123 Au 032017

This document is a question paper for an electronics and circuits exam that contains two parts - Part A and Part B. Part A contains 10 short answer questions covering topics like Zener diode characteristics, diode applications, rectification, filtering, transistor amplification, transistor configurations, and biasing. Part B contains 5 units with 2 questions each, where students must answer one question from each unit. The questions in Part B are longer form questions asking students to explain or derive aspects of topics like diode breakdowns, tunnel diodes, transition capacitance, rectifier analysis, filter derivation, transistor parameters, biasing techniques, and MOSFET operation. The document provides context and questions for students to demonstrate their understanding of fundamental electronic devices and circuits concepts

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69 views2 pages

123 Au 032017

This document is a question paper for an electronics and circuits exam that contains two parts - Part A and Part B. Part A contains 10 short answer questions covering topics like Zener diode characteristics, diode applications, rectification, filtering, transistor amplification, transistor configurations, and biasing. Part B contains 5 units with 2 questions each, where students must answer one question from each unit. The questions in Part B are longer form questions asking students to explain or derive aspects of topics like diode breakdowns, tunnel diodes, transition capacitance, rectifier analysis, filter derivation, transistor parameters, biasing techniques, and MOSFET operation. The document provides context and questions for students to demonstrate their understanding of fundamental electronic devices and circuits concepts

Uploaded by

pittalasuresh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Code No: 123AU

R15
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
B.Tech II Year I Semester Examinations, March - 2017
ELECTRONIC DEVICES AND CIRCUITS
(Common to CSE, ECE, EEE, EIE, ETM, IT, MCT)
Time: 3 Hours Max. Marks: 75

Note: This question paper contains two parts A and B.


. Part A is compulsory which carries 25 marks. Answer all questions in Part A.
Part B consists of 5 Units. Answer any one full question from each unit.
Each question carries 10 marks and may have a, b, c as sub questions.

PART-A
(25 Marks)
1.a) Draw Zener Diode Characteristics. [2]
b) Draw the Diode Equivalent Circuit. Mention the applications of PN-junction
diode. [3]
c) Explain how P-N junction diode acts as a Rectifier. [2]
d) Explain the necessity of filter circuit after the rectifier circuit. [3]
e) Explain how transistor work as an amplifier. [2]
f) Compare CE,CC and CB configurations. [3]
g) What is the need of biasing? [2]
h) Explain Bias Compensation using Diodes. [3]
i) Compare BJT and FET. [2]
j) How FET acts as Voltage Variable Resistor? [3]

PART-B
(50 Marks)
2.a) Explain the Avalanche and Zener Breakdowns in PN junction diode.
b) What is tunneling phenomena? Explain the principle of operation of tunnel diode
with its characteristics. [5+5]
OR
3.a) Derive the expression for transition capacitance of a diode.
b) Define varactor diode? Explain the operation of varactor diode with its equivalent
circuit and mention its applications. [5+5]

4. A sinusoidal voltage whose Vm=26V is applied to half-wave rectifier. The diode


may be considered to be ideal and RL=1.2 KΩ is connected as load. Find out peak
value of current, RMS value of Current, DC value of current and Ripple factor.
[10]
OR
5.a) Derive the expression for Ripple factor for Full Wave Rectifier with L-section
filter.
b) Compare FWR and Bridge rectifier. [5+5]

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6. The reverse leakage current of the transistor when in CB configuration is 0.3µA
while it is 16µA when the same transistor is connected in CE configuration.
Determine α, β and γ. [10]
OR
7.a) Explain input and output characteristics of transistor in CB configuration with
neat diagram.
b) Discuss the base width modulation. [5+5]

8.a) Derive the operating point using AC and DC load lines.


b) Draw the circuit diagram of a voltage divider bias and derive expression for
Stability factor. [4+6]
OR
9. Draw the circuit diagram of CC amplifier using hybrid parameters and derive the
expression for AI, AV, Ri and RO. [10]

10. Explain the different biasing techniques of JFET. [10]


OR
11. Describe the construction and working principle of Enhancement mode and
depletion mode MOSFET and draw its characteristics. [10]

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