BE401 / 909 – Biomedical Electronics

Assignment 2022-23

Introduction
For this assignment you are requested to design a simple circuit and hand in a report.

The assignment
You need an amplifier for lead III on an electrocardiography system. As a reminder, lead III is the
potential difference between left arm and left leg, which has an amplitude on the order of 2 mV
peak-to-peak.

You also know that the signal has a bandwidth from 0.1 to 300 Hz, and that the signal is
contaminated by a sinusoidal noise with frequency 100 kHz and amplitude on the order of 5 mV. You
wish to reduce the amplitude of the noise to no more than 10% of the amplitude of the signal.

At the output of the amplifier, you want a voltage on the order of 2 V.

In order to do this, you will need an amplifier and a filter, appropriately connected together.

In your report:

1) Define the filter specifications (type, cut-off frequency, order).

2) Define the amplifier configuration.

3) choose an appropriate operational amplifier model amongst those for which a (simplified)
datasheet is provided: LM321, LPV521, OPA2607.

4) Design the amplifier-filter circuit, providing the schematic diagram, and the value of all
components. Please use resistors in the range from 100 Ω to 1 MΩ, and capacitors from 100 pF to 10
µF, as components outside these ranges are difficult to manufacture and/or use. For the purposes of
this assignment, galvanic isolation and defibrillator protection are not necessary.

For these 4 questions, please justify all your choices.

Grading criteria
The assignment will be evaluated along the criteria:

1) Filter specifications [15 pts]:

a. Do the type, cut-off frequency, order, satisfy the requirements?
b. Did you justify your choices?
 2) Amplifier configuration [20 pts]:
a. Will the configuration work for the specific task?
b. Did you explain why you have chosen this configuration?
3) Choice of the operational amplifier model [15 pts]:
a. Did you appropriately explain why you chose this amplifier model?
4) Amplifier-filter circuit [40 pts]:
a. Is the diagram correct?
b. Are the components clearly labelled, and is the value provided?
c. Are your choices justified?
5) General [10 pts]:
a. Is technically correct language used?
b. Are all symbols used in the equations defined in words or in the diagram?

c. Do all quantities have the correct units?

How and when to submit your assignment

Please submit your assignment in PDF format on the course MyPlace page by Monday 13 March at
noon. This assignment will count for 30% of your final grade for this module.

Note on plagiarism.
The assignment is your individual work, and you must work on it by yourself. Please ensure that your
assignment is your own work. Do your own design, draw your own conclusions, and write your own text (do not
copy text, and do not cut-and paste text from other sources, such as other assignments, papers, websites, or AI
engines).

In addition to handing in your assignment, please keep all your notes, as we may request you to give us a copy.
Single Channel Operational
Amplifier

LM321
LM321 is a general purpose, single channel op amp with internal
compensation and a true differential input stage. This op amp features
a wide supply voltage ranging from 3 V to 32 V for single supplies and
±1.5 to ±16 V for split supplies, suiting a variety of applications. www.onsemi.com
LM321 is unity gain stable even with large capacitive loads up to
1.5 nF. LM321 is available in a space-saving TSOP−5/SOT23−5
package. 5
1
Features TSOP−5
• Wide Supply Voltage Range: 3 V to 32 V CASE 483
• Short Circuit Protected Outputs
• True Differential Input Stage PIN CONNECTION
• Low Input Bias Currents
• Internally Compensated IN+ 1 5 VCC
• Single and Split Supply Operation
VEE 2
• Unity Gain Stable with 1.5 nF Capacitive Load
• This Device is Pb-Free, Halogen Free/BFR Free and is RoHS IN− 3 4 OUT
Compliant

Typical Applications
• Gain Stage MARKING DIAGRAM
• Active Filter
• Signal Processing 5
ADYAYWG
G
1

ADY = Specific Device Code

A = Assembly Location
Y = Year
W = Work Week
G = Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
LM321SN3T1G TSOP−5 3000 / Tape & Reel
(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

October, 2019 − Rev. 4 LM321/D
 LM321

Table 1. ABSOLUTE MAXIMUM RATINGS (Over operating free-air temperature, unless otherwise stated)
Parameter Rating Unit
Supply Voltage 36 V
INPUT AND OUTPUT PINS
Input Voltage VEE – 0.3 to 32 V
Input Current ±10 mA
Output Short Circuit Duration (Note 1) Continuous
TEMPERATURE
Operating Temperature –40 to +125 °C
Storage Temperature –65 to +150 °C
Junction Temperature –65 to +150 °C
ESD RATINGS (Note 2)
Human Body Model (HBM) 200 V
Charged Device Model (CDM) 800 V
Machine Model (MM) 100 V
OTHER RATINGS
Latch-Up Current (Note 3) 100 mA
MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Short circuits can cause excessive heating and eventual destruction.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard: JESD22−A114
ESD Machine Model tested per JEDEC standard: JESD22−A115
3. Latch-up Current tested per JEDEC standard: JESD78

Table 2. THERMAL INFORMATION (Note 4)

Parameter Symbol Package Value Unit
Junction to Ambient qJA TSOP−5/SOT23−5 235 °C/W
4. As mounted on an 80 × 80 × 1.5 mm FR4 PCB with 650 mm2 and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC
JESD/EIA 51.1, 51.2, 51.3 test guidelines.

Table 3. RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Range Unit
Supply Voltage (VCC − VEE) VS 3 to 32 V
Specified Operating Range TA −40 to 85 °C
Common Mode Input Voltage Range VCM VEE to VCC−1.7 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

www.onsemi.com
2
 LM321

Table 4. ELECTRICAL CHARACTERISTICS − VS = 5 V

(At TA = +25°C, RL = 10 kW connected to mid-supply, VCM = VOUT = mid-supply, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = –40°C to 85°C, guaranteed by characterization and/or design.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS VS = 5 V, VCM = VEE to VCC – 1.7 V mV
TA = 25°C − 0.3 7
TA = –40°C to 85°C − − 9
Offset Voltage Drift vs Temp DVOS/DT TA = –40°C to 85°C − 7 − mV/°C
Input Bias Current IIB TA = 25°C − −10 − nA
TA = –40°C to 85°C − − −500

Input Offset Current IOS TA = 25°C − 1 − nA

TA = –40°C to 85°C − − 150

Common Mode Rejection Ratio CMRR VCM = VEE to VCC – 1.7 V 65 85 − dB

Input Resistance RIN Differential − 85 − GW
Common Mode − 300 −

Input Capacitance CIN Differential − 0.6 − pF

Common Mode − 1.6 −

OUTPUT CHARACTERISTICS
Open Loop Voltage Gain AVOL − 100 − dB
Open Loop Output Impedance ZOUT_OL f = UGBW, IO = 0 mA − 1,200 − W
Output Voltage High VOH RL = 2 kW to VEE VCC–1.8 VCC−1.4 − V
RL = 10 kW to VEE VCC−1.8 VCC−1.4 −

Output Voltage Low VOL RL = 10 kW to VCC − VEE+0.8 VEE+1.0 V

Output Current Capability IO Sinking Current mA
VS = 5 V 10 20 −
VS = 15 V 10 20 −
Output Current Capability IO Sourcing Current mA
VS = 5 V 20 40 −
VS = 15 V 20 40 −
Capacitive Load Drive CL Phase Margin = 15° − 1,500 − pF
NOISE PERFORMANCE
Voltage Noise Density eN fIN = 1 kHz − 40 − nV/√Hz
DYNAMIC PERFORMANCE
Gain Bandwidth Product GBWP CL = 25 pF, RL to VCC − 750 − kHz
Gain Margin AM CL = 25 pF, RL to VCC − 14 − dB
Phase Margin aM CL = 25 pF, RL to VCC − 60 − °
Slew Rate SR CL = 25 pF, RL = ∞ − 0.3 − V/ms
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 5 V to 32 V 62 100 − dB
Quiescent Current IQ No Load − 0.25 0.5 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

www.onsemi.com
3
 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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LPV521
SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014

LPV521 NanoPower, 1.8-V, RRIO, CMOS Input, Operational Amplifier

1 Features 3 Description
1• For VS = 5 V, Typical Unless Otherwise Noted The LPV521 is a single nanopower 552-nW amplifier
designed for ultra long life battery applications. The
– Supply Current at VCM = 0.3 V 400 nA (Max) operating voltage range of 1.6 V to 5.5 V coupled
– Operating Voltage Range 1.6 V to 5.5 V with typically 351 nA of supply current make it well
– Low TCVOS 3.5 µV/°C (Max) suited for RFID readers and remote sensor
nanopower applications. The device has input
– VOS 1 mV (Max)
common mode voltage 0.1 V over the rails,
– Input Bias Current 40 fA guaranteed TCVOS and voltage swing to the rail
– PSRR 109 dB output performance. The LPV521 has a carefully
– CMRR 102 dB designed CMOS input stage that outperforms
competitors with typically 40 fA IBIAS currents. This
– Open-Loop Gain 132 dB low input current significantly reduces IBIAS and IOS
– Gain Bandwidth Product 6.2 kHz errors introduced in megohm resistance, high
– Slew Rate 2.4 V/ms impedance photodiode, and charge sense situations.
The LPV521 is a member of the PowerWise™ family
– Input Voltage Noise at f = 100 Hz 255 nV/√Hz and has an exceptional power-to-performance ratio.
– Temperature Range −40°C to 125°C
The wide input common mode voltage range,
guaranteed 1 mV VOS and 3.5 µV/°C TCVOS enables
2 Applications accurate and stable measurement for both high-side
• Wireless Remote Sensors and low-side current sensing.
• Powerline Monitoring EMI protection was designed into the device to
• Power Meters reduce sensitivity to unwanted RF signals from cell
• Battery Powered Industrial Sensors phones or other RFID readers.
• Micropower Oxygen sensor and Gas Sensor The LPV521 is offered in the 5-pin SC70 package.
• Active RFID Readers
Device Information(1)
• Zigbee Based Sensors for HVAC Control PART NUMBER PACKAGE BODY SIZE (NOM)
• Sensor Network Powered by Energy Scavenging LPV521 SC70 (5) 2.00 mm x 1.25 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.

Nanopower Supply Current

125°C

800
SUPPLY CURRENT (nA)

700 85°C
600
500
400
25°C
300
200
100 -40°C
0 VCM = VS ± 0.3V

1 2 3 4 5 6
SUPPLY VOLTAGE (V)

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
 LPV521
www.ti.com SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014

5 Pin Configuration and Functions

SC70-5 Top View

1 5 +
OUT V

- 2
V
+ -
3 4
IN+ IN-

Pin Functions
PIN
TYPE DESCRIPTION
NO. NAME
1 OUT O Output
2 V- P Negative Power Supply
3 IN+ I Noninverting Input
4 IN- I Inverting Input
5 V+ P Positive Power Supply

6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN MAX UNIT
Any pin relative to V- −0.3 6 V
IN+, IN-, OUT Pins V– – 0.3 V V+ + 0.3 V V
+ -
V , V , OUT Pins 40 mA
Differential Input Voltage (VIN+ - VIN-) –300 300 mV
Junction Temperature (2) –40 150 °C
Mounting Temperature Infrared or Convection (30 sec.) 260 °C
Wave Soldering Lead Temp. (4 sec.) 260 °C
Storage temperature, Tstg −65 150 °C

(1) Absolute Maximum Ratings indicate limits beyond which damage may occur. Recommended Operating Conditions indicate conditions
for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and test
conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature
is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.

6.2 ESD Ratings

VALUE UNIT
(1)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±2000
Charged-device model (CDM), per JEDEC specification JESD22- ±1000
V(ESD) Electrostatic discharge V
C101 (2)
Machine Model ±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 3

Product Folder Links: LPV521
LPV521
SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014 www.ti.com

6.3 Recommended Operating Conditions (1)

MIN MAX UNIT
Temperature Range (2) −40 125 °C
Supply Voltage (VS = V+ - V−) 1.6 5.5 V

(1) Absolute Maximum Ratings indicate limits beyond which damage may occur. Recommended Operating Conditions indicate conditions
for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and test
conditions, see Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature
is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.

6.4 Thermal Information

DCK
THERMAL METRIC (1) UNIT
5 PINS
(2)
RθJA Junction-to-ambient thermal resistance 456 °C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature
is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.

6.5 1.8-V DC Electrical Characteristics

Unless otherwise specified, all limits for TA = 25°C, V+ = 1.8 V, V− = 0 V, VCM = VO = V+/2, and RL > 1 MΩ. (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOS Input Offset Voltage VCM = 0.3 V –1 0.1 1
Temperature extremes –1.23 1.23
mV
VCM = 1.5 V –1 0.1 1
Temperature extremes –1.23 1.23
(2)
TCVOS Input Offset Voltage Drift ±0.4
μV/°C
Temperature extremes –3 3
IBIAS Input Bias Current –1 0.01 1
pA
Temperature extremes –50 50
IOS Input Offset Current 10 fA
CMRR Common Mode Rejection Ratio 0 V ≤ VCM ≤ 1.8 V 66 92
Temperature extremes 60
0 V ≤ VCM ≤ 0.7 V 75 101
dB
Temperature extremes 74
1.2 V ≤ VCM ≤ 1.8 V 75 120
Temperature extremes 53
PSRR Power Supply Rejection Ratio 1.6 V ≤ V+ ≤ 5.5 V dB
VCM = 0.3 V 85 109
Temperature extremes 76
CMRR ≥ 67 dB 0 V
CMVR Common Mode Voltage Range CMRR ≥ 60 dB 0 1.8
Temperature extremes 1.8
VO = 0.5 V to 1.3 V 125 dB
74
AVOL Large Signal Voltage Gain RL = 100 kΩ to V+/2
Temperature extremes 73

(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2) The offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature
change.
4 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated

Product Folder Links: LPV521

 LPV521
www.ti.com SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014

1.8-V DC Electrical Characteristics (continued)

Unless otherwise specified, all limits for TA = 25°C, V+ = 1.8 V, V− = 0 V, VCM = VO = V+/2, and RL > 1 MΩ.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
+
VO Output Swing High RL = 100 kΩ to V /2 2 50
VIN(diff) = 100 mV
Temperature extremes 50 mV from
Output Swing Low RL = 100 kΩ to V+/2 2 either rail
50
VIN(diff) = −100 mV
Temperature extremes 50
IO Sourcing, VO to V– 3
1
VIN(diff) = 100 mV
Temperature extremes 0.5
Output Current (3) mA
Sinking, VO to V+ 3
1
VIN(diff) = −100 mV
Temperature extremes 0.5
IS Supply Current VCM = 0.3 V 345 400
Temperature extremes 580
nA
VCM = 1.5 V 472 600
Temperature extremes 850

(3) The short circuit test is a momentary open-loop test.

6.6 1.8-V AC Electrical Characteristics

Unless otherwise specified, all limits for TA = 25°C, V+ = 1.8 V, V− = 0 V, VCM = VO = V+/2, and RL > 1 MΩ. (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GBW Gain-Bandwidth Product CL = 20 pF, RL = 100 kΩ 6.1 kHz
SR Slew Rate AV = +1, Falling Edge 2.9
VIN = 0V to 1.8V V/ms
Rising Edge 2.3
θm Phase Margin CL = 20 pF, RL = 100 kΩ 72 deg
Gm Gain Margin CL = 20 pF, RL = 100 kΩ 19 dB
en Input-Referred Voltage Noise Density f = 100 Hz 265 nV/√Hz
Input-Referred Voltage Noise 0.1 Hz to 10 Hz 24 μVPP
In Input-Referred Current Noise f = 100 Hz 100 fA/√Hz

(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.

Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 5

Product Folder Links: LPV521
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Copyright © 2021, Texas Instruments Incorporated
 OPA607-Q1, OPA2607-Q1
SBOSA38A – FEBRUARY 2021 – REVISED APRIL 2021

OPAx607-Q1, Automotive, 50-MHz , Rail to Rail Output CMOS Operational Amplifier

1 Features 3 Description
• Qualified for automotive applications The OPA607-Q1 and OPA2607-Q1 devices are
• AEC-Q100 qualified with the following results: decompensated, minimum gain of 6 V/V stable,
– Temperature grade 1: –40°C to +125°C, TA general-purpose CMOS operational amplifiers with
• Gain bandwidth product (GBW): 50 MHz low noise of 3.8 nV/√ Hz and a GBW of 50 MHz.
• Quiescent current: 900 µA (typical) The low voltage offset drift (dVOS/dT) and wide
• Input offset drift: 1.5 μV/°C (maximum) bandwidth of the OPAx607-Q1 devices make them
• Offset voltage: 120 µV (typical) attractive for low cost general-purpose applications
• Input bias current: 10 pA (maximum) like low side current sensing and TIA (transipedance
• Rail-to-rail output (RRO) amplifier). The high-impedance CMOS inputs make
• Supply range : 2.2 V to 5.5 V the OPAx607-Q1 devices ideal amplifiers to interface
with sensors with high output impedance (for
2 Applications example, piezoelectric transducers).
• DC/DC converter The rail-to-rail output (RRO) of the OPAx607-Q1
• Inverter and motor control devices can swing up to 8 mV from the supply rails,
• On-Board (OBC) and wireless charger maximizing dynamic range.
• e-Turbo
• HVAC compressor module The OPAx607-Q1 is optimized for low supply voltage
• Gesturing operation as low as 2.2 V (±1.1 V) and up to 5.5 V
(±2.75 V), and is specified over the temperature range
of –40°C to +125°C.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
OPA607-Q1 SOT23 (5) 2.90 mm × 1.60 mm
OPA2607-Q1 VSSOP (8) 3.00 mm × 3.00 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.
Short Circuit Transimpedance
LOAD VTH Detection stage
± VREF +
RF
TLV3201 OPAx607-Q1 ADS7042
LED driver
+ í
VS+ VS+
RG RF
ISH
± REXT
RSH

RG OPAx607-Q1 ADS7042
CEXT
+
Photodiode CF
RF

VREF
OPAx607-Q1 for Transimpedance Application
OPAx607-Q1 for Current-Sensing Application

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
 OPA607-Q1, OPA2607-Q1
www.ti.com SBOSA38A – FEBRUARY 2021 – REVISED APRIL 2021

7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
(VS+) – (VS–) Supply voltage, Vs 6 V
VIN+, VIN– Input voltage (VS–) – 0.5 (VS+) + 0.5 V
VID Differential input voltage(4) ±5 V
II Continuous input current(2) ±10 mA
IO Continuous output current(3) ±20 mA
Continuous power dissipation See Thermal Information
TJ Maximum junction temperature 150 °C
TA Operating free-air temperature –40 150 °C
Tstg Storage temperature –65 150 °C

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails
should be current limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.
(4) Long term drift of offset voltage (> 1mV) if a differential input in excess of ≈ 2V is applied continuously between the IN+ and IN- pins at
elevated temperatures.

7.2 ESD Ratings

VALUE UNIT

Electrostatic Human-body model (HBM), per AEC Q100-002(1) ±2000

V(ESD) V
discharge Charged-device model (CDM), per AEC Q100-011 ±1000

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with ANSI/ESDA/JEDEC JS-001 Specification

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
2.2 5.5
VS Supply voltage (VS+) – (VS–) V
±1.1 ±2.75
TA Ambient operating temperature –40 25 125 °C

7.4 Thermal Information

OPAx607-Q1
THERMAL METRIC(1) DBV (SOT23) DGK (VSSOP8) UNIT
5 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 196.5 179 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 118.7 71 °C/W
RθJB Junction-to-board thermal resistance 64.5 101 °C/W
ψJT Junction-to-top characterization parameter 41.1 13.7 °C/W
ψJB Junction-to-board characterization parameter 64.2 100 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

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7.5 Electrical Characteristics

At TA = 25°C, VS = 2.2 V to 5.5 V, G = 6 V/V(3), RF = 5 kΩ, CF = 2.5 pF, VCM = (VS / 2) – 0.5 V, CL = 10 pF, RL = 10 kΩ
connected to (VS / 2) – 0.5 V and PD connected to (VS+) (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
±0.1 ±0.6
VOS Input offset voltage mV
TA = –40°C to +125°C(2) ±0.1 ±0.7
dVOS/dT Input offset voltage drift(2) TA = –40°C to +125°C ±0.3 ±1.5 µV/°C
VS = 2.2 V to 5.5 V 95 110
PSRR Power-supply rejection ratio dB
TA = –40°C to +125°C 95
INPUT VOLTAGE RANGE
VCM Common-mode voltage range (VS–) (VS+) – 1.1 V
(VS–) < VCM < (VS+) – 1.1 V 90 100
CMRR Common-mode rejection ratio dB
TA = –40°C to +125°C 86
INPUT BIAS CURRENT
±3 ±10
IB Input bias current(2)
TA = –40℃ to 125℃ See Figure 7-27 pA
IOS Input offset current(2) ±3 ±10
NOISE
Input voltage noise (peak-to-peak) f = 0.1 Hz to 10 Hz 1.6 µVPP
eN Input voltage noise density f = 10 kHz, 1/f corner at 1 kHz 3.8 nV/√Hz
iN Input current noise density f = 1 kHz 46 fA/√Hz
INPUT IMPEDANCE
Differential 11.5
CIN pF
Common-mode 5.5
OPEN-LOOP GAIN
(VS–)+400 mV<VOUT<(VS+)–400 mV 110 130
AOL Open-loop voltage gain dB
TA = –40°C to +125°C 100
Phase margin 65 °
AC Characteristics (VS = 5 V)
SSBW Small-signal bandwidth VOUT = 20 mVpp 10
MHz
GBW Gain-bandwidth product G = 20 V/V 50
SR Slew rate 3-V output step (10-90%) 24 V/µs
To 0.1%, 3-V step, G = 40 1
tS Settling time µs
To 0.01%, 3-V step, G = 40 1.8
Overdrive recovery time VIN+ × Gain > VS 0.25 µs
VOUT = 2 VPP ,f = 1 kHz ,RL = 10 kΩ -103
VOUT = 2 VPP ,f = 20 kHz ,RL = 10 kΩ -91.5
THD+N Total Harmonic Distortion + Noise(4) dB
VOUT = 2 VPP ,f = 1 kHz ,RL = 1 kΩ -96
VOUT = 2 VPP ,f = 20 kHz ,RL = 1 kΩ -72.8
HD2 Second-order harmonic distortion VOUT = 2 VPP ,f = 20 kHz -105
dBc
HD3 Third-order harmonic distortion VOUT = 2 VPP ,f = 20 kHz -95

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7.5 Electrical Characteristics (continued)

At TA = 25°C, VS = 2.2 V to 5.5 V, G = 6 V/V(3), RF = 5 kΩ, CF = 2.5 pF, VCM = (VS / 2) – 0.5 V, CL = 10 pF, RL = 10 kΩ
connected to (VS / 2) – 0.5 V and PD connected to (VS+) (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
8 12
Output voltage swing from supply rails mV
TA = –40°C to +125°C 12
ISC Output Short-circuit current 60 mA
ZO Open-loop output impedance f = 1 MHz 500 Ω
POWER SUPPLY
IO = 0 mA 900 1100
IQ Quiescent current per amplifier µA
TA = –40°C to +125°C 1200

(1) Parameters with minimum or maximum specification limits are 100% production tested at 25ºC, unless otherwise noted. Over
temperature limits are based on characterization and statistical analysis.
(2) Specified by design or/and characterization; not production tested.
(3) All Gains (G) mentioned are in V/V unless otherwise noted.
(4) Lowpass-filter bandwidth is 92kHz for f = 20 kHz and 20 kHz for f = 1 kHz.

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