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ENG571 - Final Exam - 2021

1. The document contains 4 circuit analysis questions with accompanying circuit diagrams. 2. Question 1 involves determining the ratio of resistances in a potentiometer circuit to achieve a specific output voltage. 3. Question 2 involves analyzing a MOSFET amplifier circuit, including determining bias points and differential gain. 4. Questions 3-5 involve time constant, voltage gain, and saturation region analyses of various transistor circuits.

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SABINA MISHRA
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71 views4 pages

ENG571 - Final Exam - 2021

1. The document contains 4 circuit analysis questions with accompanying circuit diagrams. 2. Question 1 involves determining the ratio of resistances in a potentiometer circuit to achieve a specific output voltage. 3. Question 2 involves analyzing a MOSFET amplifier circuit, including determining bias points and differential gain. 4. Questions 3-5 involve time constant, voltage gain, and saturation region analyses of various transistor circuits.

Uploaded by

SABINA MISHRA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Question 1 (20 marks)

For the circuit shown in Figure 1, the overall value of potentiometer RX is 2KΩ. The base-
emitter junction area of the transistor Q1is 10% bigger than the base-emitter junction
area of the transistor Q2. If the potentiometer is placed in its middle (Rx1=Rx2), the output
voltage of Vo will be 0.2 V. To have the output voltage Vo=0 V, what the ratio of Rx1/Rx2
would be?

Figure 1.

Question 2 (30 marks)


For the amplifier shown in Figure 2, answer the following questions:
1) Prove that for the utilized MOSFETs VSD1=VSD2.(6 marks)
2) Based on the result obtained from part (1), determine biasing points of transistors Q2
and Q4 (DC values of IC2, Ic4, VCE2 and VCE4). Note that the DC values of the voltage
sources (Vin1 and Vin2) are zero volt. (4 marks)
3) Determine the differential voltage gain of the amplifier. (7 marks)
4) Determine the maximum swing of the output voltage (maximum and minimum values
of Vo represented as (v0)min and (vo)max). (13 marks)
Assumptions
MOSFETs: (W/L)1=(W/L)2=50/1, K’p=30 μ/V2, |Vt|=0.8 V and VA=20 V.
BJTs: β=100, VBE(on)=0.7 V, VA=100 V and VCE (in saturation mode)=0.2 V.

Figure 2.
Question 3 (10 marks) Question 4 (15 marks)
For the circuit shown in Figure 3, apply the open- For the circuit shown in Figure 4, determine
circuit time constant method (Just by considering the voltage gain (vo/vs) of the amplifier.
Cgss and Cgds) and derive an expression for the Assume that transistors are biased in
time constants applied for the upper 3dB saturation mode. Assume gm1=10 mA/V and
frequency fH of the circuit. Consider the Early gm2=2 mA/V. Ignore the Early effect.
effect of transistors in your solution.

Figure 3. Figure 4.

Question 5 (5 marks)
For the circuit shown in Figure 5, determine the minimum value of Vout, which maintains
transistor M2 in the saturation region. Assume

For Q1 and Q2: (μnCoX) (W/L)=0.2 mA/V2

For Q3 and Q4: (μnCoX) (W/L)=0.8 mA/V2

For all transistors, Vt=0.4 and λ=0.

Figure 5.
Formula sheet

NMOSET transistor

1 W v 1 W v
iD   n C ox ( v GS  V t ) 2 (1  DS )  k n ( v GS  V t ) 2 (1  DS )
2 L VA 2 L VA
W   W 
g m  (  n C ox )   V OV  2 (  n C ox ) ID
 L   L 
V
ro  A
ID
1 I
VA  gm 
 V OV / 2

|VA|=|V΄A|.L

PMOSFET transistor

1 W v 1 W v
i D   p C ox ( v S G  Vt ) 2 (1  SD )  k p ( v SG  Vt ) 2 (1  SD )
2 L VA 2 L VA
W W
g m  ( p C ox ) VOV  2( p C ox ) I D
L L
VA
ro 
ID
1
VA 

|VA|=|V΄A|.L

BJT transistors

v CE
iC  ISe v BE / V T
(1  )
V A
iC  IC
iB   IB 
 
IC
g m 
VT
g m re  

 
  1

r 
gm
VA
ro 
IC

VT=25 mV VBE=0.7 V.
Output resistances: (If applicable, it is assumed that transistors used in each circuit of the below
cases are identical.)

Current Mirror: ro

Wilson Current Mirror (MOSFET): gmro2

Wilson Current Mirror (BJT): βro/2

Cascode Current mirror (MOSFET): gmro2

Widlar Current Mirror (BJT): ro(1+gm(Re||rπ)) (Re: resistance at the emitter)

Cascode Amplifier (MOSFET): gmro2

Cascode Amplifier (BJT): gmro(ro||rπ)

Active load differential amplifiers (MOSFETs, BJTs): ro/2

Common-source/Common-gate amplifiers (with the source resistance of Rs and Early effect):


ro(1+gmRS)

Common-emitter/Common-base amplifiers (with the emitter resistance of Re and Early effect):


ro(1+gm (Re||rπ))

Input resistances (Note: RL is the load resistance)

Common-Emitter (with the emitter resistance of Re and Early effect): (β+1)re+ (β+1) Rero/(ro+RL)

Common-Base (with the Early effect):


( )

CMRRs

Active load differential amplifiers (BJT): 0.5 βgmREE

Active load differential amplifiers (MOSFET): (gm ro) (gm RSS)

Common-mode gains

Active-load differential amplifiers (MOSFET): -(2gmRSS)-1

Active-load differential amplifiers (BJT): -[ro/(βREE)]

Non active-load differential amplifiers (MOSFET): RD/(2RSS) (RD: resistance at the drain)

Non active-load differential amplifiers (BJT): RC/(2REE) (RC: resistance at the collector)

Note:

REE: output resistance of the current source used for the biasing of BJTs.

RSS: output resistance of the current source used for the biasing of MOSFETs.

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