SOLVED PROBLEMS

1-) In the MOSFET circuit shown, the transistor has

W
kn  0.2 mA/V2 , Vt = 1 V.
L
(a) Find R so that the drain current is ID = 1.6 mA.
(b) Find the drain voltage VD and the drain current ID for R = 5 kΩ.

+10 V

ID
R

VD
Q

Solution:

(a)
1
I D   0.2  (VGS  Vt ) 2  1.6  VGS  5.0 V VGS  VDS  10  RI D
2
10  5
 R  3.125 k
1.6

(b)
1
I D   0.2  (VGS  Vt ) 2 VGS  VDS  10  5I D
2
1
 I D   0.2  (10  5I D  1) 2  0.1 (81  90 I D  25I D2 )
2
 25I D2  100 I D  81  0  I D  1.1282 mA,

The other solution I D  2.8718 mA is not physically possible, since VDS  0 for this solution.

 VDS  10  5  1.1282  4.359 V

2-) In the MOSFET circuit shown, the transistor has the following parameters

W
kn  1.0 mA/V2 ,   0 , Vt = 2 V
L

Find the drain current ID, and the gate-source voltage VGS. State in which region of its characteristics the transistor
operates.

+10 V

4 k
ID

+
VGS
–
3 k

–10 V

Solution:

Assume that the transistor operates in saturation

VGS  VG  VS  VS
1 1 1
ID   1  (VGS  Vt ) 2 mA  I D  ( VS  Vt ) 2  (VS  2) 2
2 2 2
VS  3I D  10  2 I D  (3I D  8) 2
9 I D2  50 I D  64  0  I D  2 mA is the physically possible solution

Check for saturation

VS  4 V  VGS  4 V > Vt  2 V
VD  10  4  2  2 V  VDG  2 V  Vt  2 V
 Saturation.
3-) In the MOSFET circuit shown, the transistor has
W
kn  0.1 mA/V2 ,   0 , Vt  1 V .
L
(a) For R = 2 kΩ, find the current I required to operate the MOSFET in its saturation region with VDS  3 V .
(b) Given that I = 0.4 mA, find R so that the transistor operates in the triode region with VDS  2 V .

VD
Q
+
VGS
-
+10 V

Solution:

(a)
1
RI  VDG  0  VDG   RI  Vt  I  0.5 mA for saturation.
R
1
I D   0.1 (VGS  Vt ) 2 mA VGS  VGD  VDS  2 I  3
2
 20 I  (2 I  2) 2  I 2  3I  1  0
I1  0.382 mA, I 2  2.618 mA  I  0.382 mA since I  0.5 mA.
(b)
W 1 2 
I  kn (VGS  Vt )VDS  VDS in the triode region.
L  2 

VDS  2 V  VGS  Vt  0.4R  1 (R in k)
 1 
 0.4  0.1 (0.4 R  1)  2  (2)2   R  5 k
 2 
4-) In the MOSFET circuit shown, the transistors have widths W1 = 10 μm, W2 = 40 μm, and their lengths are equal,
i.e. L1 = L2 = 2 μm. Both transistors have kn  0.2 mA/V2 , and Vt = 1 V. Find the voltage Vo and the current ID.

+5 V

Q1
ID
Vo
Q2

Solution:

Because VDG = 0 for both transistors, they operate in saturation.

1 W 1 W L1 W2
I D  kn 1 (VGS1  Vt )2  kn 2 (VGS 2  Vt )2  (VGS1  Vt )  . .(VGS 2  Vt )  2(VGS 2  Vt )
2 L1 2 L2 L2 W1
By KVL, VDS 1  VDS 2  5 Also, VDS1  VGS1 , VDS 2  VGS 2  VGS 2  5  VGS1
 3VGS1  10  Vt  9 V, VGS1  3 V Vo  VGS 2  2 V
1 10
ID   0.2  (3  1)2  2 mA
2 2
5-) The MOSFET in the common-source amplifier shown has the small-signal parameters

gm = 2 mA/V, ro = 50 kΩ.

Assume that the transistor is properly biased at a point in its saturation region.

(a) Draw the small-signal equivalent circuit of the amplifier.

(b) Find the voltage gain Av  vo / vi , and the overall voltage gain Gv  vo / vsig .

+15 V

10 MΩ 5 kΩ

 vo
Rsig = 100 kΩ

+ 15 kΩ
+
vsig _
vi
2 kΩ

5 MΩ


Solution:
(a) Small-signal equivalent circuit
Rsig = 100 kΩ
+ vo
+ 5 kΩ
50 kΩ 15 kΩ
+ vgs
vsig _
5 MΩ//10MΩ vi gmvgs


(b)
vo   g m vgs (50k  || 5k  ||15k )  2  3.4884 vgs  6.9767 vgs
 Av  6.9767 V/V
vi (5M ||10M) 3.333
   0.9709
vsig 100k  (5M ||10M) 3.433
vo  vo   vi 
 Gv       6.9767  0.9709  6.7737 V/V
vsig  vi   vsig 
6-) The MOSFET in the common-source amplifier shown has the small signal parameters

gm = 2 mA/V and   0 .

The coupling and bypass capacitors are short circuits at the signal frequencies.

(a) Draw the small-signal equivalent circuit of the amplifier.

(b) Find the voltage gain Av  vo / vi .
(c) Find the overall voltage gain Gv  vo / vsig .
(d) Find the input (Rin) and output (Rout) resistances.
+15 V

5 kΩ

CC2 vo
CC1
Rsig = 100 kΩ

+ 20 kΩ
Rout
+
vsig _
vi 1 kΩ
2 MΩ


Rin

CS

-15 V
Solution:
(a) Small-signal equivalent circuit. Note that ro is infinite since   0 .
Rin Rout
Rsig = 100 kΩ G D
+ vo
+ gmvgs
+ vgs
vsig _ 2 MΩ
vi 5 kΩ 20 kΩ
 S


1 kΩ

(b)
vo v
Voltage gain: Av 
, vi  vgs  (1 k) g m vgs  3vgs  vgs  i
vi 3
8 8
vo   gm vgs (5k || 20k)  2  4 vgs  8vgs   vi  Av   V/V
3 3
vo vo vi 2  8
(c) Overall voltage gain: Gv         2.54 V/V
vsig vi vsig 2.1  3 
(d) Rin  2 M
To find Rout , the signal source is turned off: vsig  0  vi  0  vgs  0
The controlled current source becomes open-circuit  Rout  5 k
7-) The MOSFET in the common-gate amplifier shown has the small signal parameters

gm = 2 mA/V and   0 .

(a) Draw the small-signal equivalent circuit of the amplifier.

(b) Find the voltage gain Av  vo / vi , the overall voltage gain Gv  vo / vsig , and the input (Rin) and output (Rout )
resistances.

+10 V

Rin 10 k
Rsig= 1 k Rout

vo
+ 

+ vi 30 k
vsig 
I

Solution:
(a) Small-signal equivalent circuit

Rin Rout
Rsig = 1 kΩ S gmvgs D
– vo
+ vgs
vsig _ 10 kΩ 30 kΩ

G

(b)
vo   g m vgs (10 k || 30 k)  2  7.5 vgs  15 vgs
vsig
 KVL:  vsig  g m vgs Rsig  vgs  0  vgs  
1  g m Rsig
vo 15
 Gv   5
vsig 1  2  1
vi 1
Rin    0.5 k, Rout  10 k
ii gm
8-) The MOSFET in the common-drain amplifier +15 V
shown has the small signal parameters
gm = 2 mA/V, ro  150 k and   0 .
Assume that the transistor is properly biased at a CC1
point in its saturation region. Rsig = 100 kΩ
Rout
CC2
(a) Draw the small-signal equivalent circuit of +
the amplifier.
(b) Find the voltage gain Av  vo / vi , the vsig + vo
_ vi 1 MΩ
overall voltage gain Gv  vo / vsig , and the
15 kΩ
input (Rin) and output (Rout) resistances. Rin


(a) Small-signal equivalent circuit –15 V

Rin
Rsig = 100 kΩ G D

+ + gmvgs
+ vgs 150 kΩ
vsig _
1 MΩ vi
 S


vo
15 kΩ
Rout

(b) vo  g m vgs (15 k 150 k)  2  13.64 vgs  27.28 vgs

vo 27.28
KVL:  vi  vgs  vo  0  vi  28.28vgs  Av    0.965
vi 28.28
1000
vi  vsig  0.909vsig  Gv  0.909  0.965  0.877
1100
Rin  1 M

For Rout, a test source must be applied after removing the load and turning the input signal off:

100 kΩ G D vG  vgs  vt  0  vgs  vt

+ vt
+ gmvgs KCL at S: it  g m vgs  0
vgs 150 kΩ ro
1 MΩ vi


S vt  1
 it  g m vt    g m   vt
it ro  ro 
+ v 1 ro 150k
- vt  Rout  t     498.3 
it g  1 1  g m ro 301
m
ro
9-) The BJT in the circuit below has β = 100 , VBE = 0.7 V and VCEsat = 0.2 V.

(a) For VS = 3 V find the collector voltage VC, the collector current IC and the base current IB. State whether the
transistor is active, in saturation or in cut-off.
(b) For VS = 4 V find the collector voltage VC, the collector current IC and the base current IB. State whether the
transistor is active, in saturation or in cut-off.
(c) Calculate the overdrive factors for (a) and (b) if the transistor is in saturation.
+5 V

2.2 k

VC
15 k
VS

100 k

 V

Solution:
(a)

Assume that the transistor is active

+5 V

VS  0.7
2.2 k VBE  0.7 V,  VB  0.7 V I1 
15
VC
0.7  12 V 
15 k VB I2   0.127 mA  I B  I1  I 2   S  0.1737  mA
VS 100  15 
I1 IB
V
I2 100 k  I C   I B  100 S  17.37 mA
15
 V  VCE  5  2.2 I C  43.214  14.667 VS V

When VS  3V VCE < 0 V  Transistor cannot be active; it is in saturation.

5  0.2 3
Let VCE =VCE , sat = 0.2 V  I C , sat   2.182 mA, I B   0.1737 mA  0.0263 mA
2.2 15
(b)
When VS  4 V again VCE < 0 V  Transistor cannot be active; it is in saturation.
5  0.2 4
Let VCE =VCE , sat = 0.2 V  I C , sat   2.182 mA, I B   0.1737 mA  0.093 mA
2.2 15

(c) Overdrive factors:

I C , sat  100
(a)  forced   82.97 overdrive factor    1.205
IB  forced 82.97

I C , sat  100
(b)  forced   23.46 overdrive factor    4.263
IB  forced 23.46
10-) The BJT in the circuit shown has   1 and VCEsat = 0.2 V. At the edge of conduction VBE = 0.5 V. For active
operation and saturation VBE = 0.7 V.

(a) For VB = 0 V, find the collector and emitter voltages VC, VE.
(b) Find the value of VB at which the transistor enters cut-off.
(c) Find the value of VB at which the transistor enters saturation.

6 mA
VC

2 k
VB

VE

2 mA 2 k

Solution:
(a)

VC  2(6  I C )  12  2 I C
6 mA
VE  2( I E  2)  2 I E  4
VC
6-IC Assume that the transistor is active  VBE  0.7 V
IC 2 k
VB VB  0 V  VE  0.7 V
IE IE -2  I E  1.65 mA IC   I E  I E
VE  VC  8.7 V  VCE  8.7  ( 0.7)  9.4 V  active.
2 mA 2 k

(b)
Let I C  I E  0 (in cutoff)  VC  12 V, VE  4 V
VBE  0.5 V  VB  VE  0.5  3.5 V

(c)
At the edge of saturation I C  I E and VCE  0.2 V
VCE  (12  2 I C )  (2 I C  4)  16  4 I C  I C  3.95 mA
 VC  4.1 V, VE  3.9 V  VB  VE  0.7  4.6 V
11-) The BJT in the circuit shown has +10 V

  100, VBE  0.7 V, VCEsat  0.2 V IC R

For the following values of R, determine whether the transistor VC
operates in the active mode or in saturation. Then find the values 20 k
of the collector current I C , and the voltages VC and V E . (Hint: If
the transistor is in saturation forced will be unknown)
VE
(a) R  2 k .
(b) R  10 k .
2 mA

Solution:

(a) Assume that the transistor is active

I C   I E  1.98 mA  VC  10  2  1.98  5.96 V

VB  20 I B  20  0.0198  0.396 V  VE  VB  VBE  1.096 V
 VCE  VC  VE  7.056 V  0.2 V  transistor is active.

(b) Assume again that the transistor is active

I C  1.98 mA  VC  10  10  1.98  9.8 V

VE  1.096 V  VCE  VC  VE  8.7 V

 transistor cannot be active. It is in saturation

VCEsat  0.2 V, I Csat   forced I B ( forced is unknown)

2
 I E  (1   forced ) I B  2 mA  IB  mA
1   forced
VE  20 I B  0.7 V
VC  10  10 I Csat  10  10 forced I B
VCE  VC  VE  10  10 forced I B  ( 20 I B  0.7)  0.2 V
 10 forced  20  I B  10.5  2 10  forced  20   10.5 1   forced 
  forced  5.32
 I B  0.3165 mA, I Csat  1.683 mA  VC  10  10  1.684  6.83 V
Check: VE  20  0.3165  0.7  7.03 V  VCE  VC  VE  0.2 V
12-) The BJT in the circuit shown has +10 V

  100, VBE  0.7 V, VCEsat  0.2 V IC 10 k

VC
(a) For RB = 320 k, find the values of the collector current I C , and the
voltages VC and V E . State whether the transistor operates in the
active mode or in saturation.
VE
(b) Find the value of RB that will operate the transistor at the edge of RB
saturation vCE  VCE (EOS)  0.3 V . 5 k

–10 V

Solution:

(a) Assume that the transistor is active. KVL for the base loop:

RB I B  VBE  RE I E  10  0  I E  (1   ) I B  101I B
10  0.7
 IB   11.2727 μA I C  1.1272 mA, I E  1.1385 mA,
320  101  5
VC  10  10  1.1272  1.2727 V
VE  5I E  10  4.3075 V  VCE  3.035 V  transistor is active.

(b) The transistor is active at the edge of saturation.

9.3 930 9300

IB  IC   VC  10 
RB  505 RB  505 RB  505
505  9.3 13996.5
VE   10 VCE  0.3 V   19.7  RB  205.48 k
RB  505 RB  505
13-) The BJT in the common-emitter amplifier shown has

  100, VA  50 V .

The coupling capacitors may be taken as short circuits at the signal frequencies.

(a) Calculate the bias value of the collector voltage Vc.

(b) Calculate the small-signal parameters ( g m , r , ro ) of the transistor.
vo
(c) Draw the small-signal equivalent circuit of the amplifier, and find its overall voltage gain Gv  .
vsig

+12 V
4 kΩ
CC2
Vc
10 kΩ CC1 vo

6 kΩ
+
vsig _ CE
100 kΩ
2 mA

Solution:

(a) I C   I E  (100 / 101)  2 mA  1.98 mA  VC  12  4 I C  4.08 V

I C 1.98 mA  VA
(b) g m    79.2 mA / V ; r   1.262 k ; ro   25.25 k
VT 25 mV gm IC

(c)

10 kΩ B ib C
vo
+
βib
+
rπ Vπ 25.25 kΩ
vsig _ 100 kΩ 4kΩ//6 kΩ

25.25 k 4 k 6 k  2.192 k
vo   g m v (2.192 k)  173.6v
1.246
1.262 k 100 k  1.246 k  v  vsig  0.11vsig
10  1.246
 Gv  173.6  0.11  19.1 V/V
14-) The BJT in the common-emitter amplifier has
  100, VA  50 V . +12 V

The coupling capacitors may be taken as short circuits at RC

the signal frequencies. CC2
CC1 vo
(a) For RC  5 k, I  0.5 mA , calculate the overall 10 kΩ
voltage gain of the amplifier 5 kΩ
v
Gv  o vsig +
vsig _
100 kΩ
CE
(b) Determine RC to obtain an overall voltage gain of I
Gv  20 V/V .

Solution:

(a) I C   I E  (100 / 101)  0.5 mA  0.495 mA

I C 0.495 mA  100 VA 50
gm    19.8 mA / V ; r    5.05 k ; ro    101 k
VT 25 mV gm 19.8 I C 0.495

Small-signal equivalent circuit:

10 kΩ B ib C
+ vo
+
gmvπ
rπ vπ 101 kΩ
+
vsig _ vi 100 kΩ Rc 5 kΩ
–
E
–

RL  ro || Rc || RL  101 k 5 k 5 k  2.44 k

vo
vo   g m v (2.44 k)  48.312vi  Av   48.312
vi
vo vo vi v vi 5.05 k 100 k
Gv    Av i   0.3237
vsig vi vsig vsig vsig (5.05 k 100 k)  10 k
 Gv  48.312  0.3237  15.64 V/V

(b)
Gv  0.3237 Av  20  Av  61.78  g m RL  61.78
RR R R 3.12  5
 RL  3.12 k  c L  Rc  L L   8.298 k
Rc  RL RL  RL 5  3.12
15-) The BJT in the emitter-follower amplifier shown has +10 V
β = 100. The coupling capacitors may be taken as short
circuits at the signal frequencies. Neglect the output
resistance of the transistor. 200 kΩ

(a) Calculate the bias value of the emitter voltage VE. CC1
15 kΩ
(b) Calculate the small-signal parameters of the transistor.
(c) Draw the small-signal equivalent circuit of the CC2
vo
i iin
amplifier, and find its current gain Ai  out . vsig +
_
iin
2 kΩ 2 kΩ
iout

Solution:

(a)
+10 V KVL equation for the dc circuit

 200k  (1   )(2k)  I B  10  0.7  9.3 V

200 kΩ
9.3 V
 IB   23.13  A
IB 402k
+  VE  (2k) I E  (2k)(1   ) I B  4.67 V
V BE
_ VE

2 kΩ

(b)

15 kΩ B ib C
iin
βib
rπ
vsig + Rib
_ 200 kΩ 2.313 mA
E I C   I B  2.313 mA  gm   92.52 mA/V
25 mV
iout  100
r    1.08 k
2 kΩ 2 kΩ gm 92.52

(c)

1
iout  (1   )ib  50.5ib
2
vi
vi  r ib  (2k || 2k)(1   )ib  (102.08 k)ib  Rib   102.08 k
ib
200
ib  iin  0.6621iin  iout  50.5  0.6621iin  Ai  33.44 A/A
200  102.8
16-) In the common-emitter amplifier shown, the transistor has β =80, and VA = 100 V.

(a) Find the dc bias values of the collector current IC and the collector- voltage VC.
(b) Draw the small-signal equivalent circuit of the amplifier and find its overall voltage gain Gv  vo / vsig .

+12 V

47 kΩ 2 kΩ

 vo
Rsig = 1 kΩ

+ 15 kΩ

vsig +
680Ω 
_ vi
33 kΩ

Solution:

(a) The bias circuit:

+15 V

IC 2 kΩ

VBB  VBE 33
VC IB  VBB  12  4.95 V RB  (47 k || 33 k)  19.3875 k
RB = 19.39 kΩ
RB  (1   ) RE 47  33
IB 4.95  0.7
IB   0.0571 mA  I C  80  0.0571  4.5656 mA
VBB +
–
680 Ω
19.39  (81 0.68)
VC  15  2I C  5.87 V

(b)
1 kΩ B ib C
+ vo
+ 4.5656 mA
gmvπ gm   182.6 mA/V
547.6 Ω vπ 21.93 kΩ
+
25 mV
vsig _ vi 19.39 kΩ 2 kΩ 15 kΩ  80
– r    438.1 
g m 182.6
E
– VA 100
r0    21.93 k
I C 4.5656

RL  ro || Rc || RL  21.9 k 2 k 15 k  1.6331 k

vo
vo   g m v (1.6331 k)  298.2vi  Av   298.2
vi
vo v v v vi 0.438 k 19.39 k
Gv   o i  Av i   0.1764
vsig vi vsig vsig vsig (0.438 k 19.39 k)  2 k
 Gv  298.2  0.1764  52.6 V/V