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Fermi Statistics Problem Set

This document contains 7 problems related to Fermi-Dirac statistics and materials for energy applications: 1) Calculate electron probabilities near the Fermi level in a semiconductor. 2) Derive an expression for the total number of states in a semiconductor between the conduction band edge and that energy plus kT. 3) Calculate electron occupation probabilities in silicon at different energies relative to the band gap and Fermi level. 4) Determine the energy and concentration of maximum electron concentration using the Maxwell-Boltzmann approximation. 5) Show that the average kinetic energy in a Fermi gas is (3/5)EF. 6) Calculate the probability of an electron in copper having 99% of the Fer

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119 views1 page

Fermi Statistics Problem Set

This document contains 7 problems related to Fermi-Dirac statistics and materials for energy applications: 1) Calculate electron probabilities near the Fermi level in a semiconductor. 2) Derive an expression for the total number of states in a semiconductor between the conduction band edge and that energy plus kT. 3) Calculate electron occupation probabilities in silicon at different energies relative to the band gap and Fermi level. 4) Determine the energy and concentration of maximum electron concentration using the Maxwell-Boltzmann approximation. 5) Show that the average kinetic energy in a Fermi gas is (3/5)EF. 6) Calculate the probability of an electron in copper having 99% of the Fer

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EN-413 – Materials for Energy Applications

Problem Set – Fermi Dirac Statistics

1. Find the probability of distribution of electrons at energies 1, 0.01 eV below


the Fermi level and 0.01 and 1 eV above the Fermi Level.

2. Derive an expression for the total number of states in a semiconductor material


(per unit volume) between Ec and Ec + kT, where Ec is the conduction band edge
(bottom of the conduction band), k is Boltzmann's constat and T is the temperature.
Consider the case of GaAs at room temperature where m*=0.067m0.

3. Consider a silicon crystal whose band gap energy is Eg =1.12 eV and whose
temperature is kept at T=300o K.
a) If the Fermi level, Ef , is located in the middle of the band gap, what is the
probability of finding an electron (or equivalently, the probablility of a state
being occupied) at E = Ec + kT.
Hint: write Ef = Ec – Eg/2
b) If the Fermi level, Ef is located at the conduction band edge, EF = Ec, what
the probablility of finding an electron at E = Ec + kT.

4. The equilibrium electron concentration is given by the product of the density


of states and the probablility function, n(E) = g(E).F(E). If E - EF >> kT, the Fermi-
Dirac probability function can be approximated with the Maxwell-Boltzmann
function.
a) Using this approximation, find the energy relative to the conduction band
edge, E - Ec, at which the electron concentration becomes maximum.
b) Using this approximation, calculate the electron concentration per unit energy
interval (in units of cm-3eV-1) in silicon at energy E = Ec - kT. Assume the
Fermi level is located at the center of the band gap, EF = Ec – Eg/2.

5. Show that the average kinetic energy in a Fermi gas is (3/5)EF

6. Calculate the probability that an electron in Cu at 300 K has energy equal to


99% of the Fermi energy.

7. Quantum wells are often used in applications such as semiconductor lasers. In


a quantum well, electrons are confined in a thin slab of material, as shown below

The density-of-states, D(E) in an ideal


quantum-well is step-like:
At T≈0K, there are 1.4 × 105 states in
this system, mark the location of Fermi
Level.

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