Electrical and Magnetic Properties
Electrical and Magnetic Properties
atomic number,
atomic weights, and electrons in the outer shells, acidity and alkalinity of the material
Structural Properties-Deals with the buildup of the material. They include the size, alloys and
composites
Conduction band
Forbidden band
Valence band
The size of the energy levels determines the electrical properties of the material.
The smaller it is the more the conductivity.
5. Energy Gap(Eg)
This is the energy required to enable an electron to transits from the valence band to the CB.
It is measured in electron volts (eV)
It is related to the forbidden band in that the larger the band the more the energy that will be
required to enable an electron t transits from the VB to the CB
6. Resistance
The opposition of the flow of current by a conducting material
Measured in ohms
By ohms law, it is given by
𝑉
𝑅=
𝐼
Where
V-Voltage
𝜌𝑡 − Total resistivity
𝐼 𝑉
𝑅=𝜌 =
𝐴 𝐼
𝑅𝑡 =𝑅0 +∝ 𝑇
𝐽 = 𝜎𝜖
Where
𝜖-electric field
𝐼
𝐽=𝐴
Resistivity (𝝆)
• temperature
• impurities
• plastic deformation
• pressure
There are is a linear relation from -2000C as one increases the temperature
𝜌0 = 𝜌𝑜 + 𝛼𝑇
Impurities
In most cases the impurities increases the resistivity of materials. This feature is discussed under
alloys since two or more materials are physically combined.
For semiconductor materials; Their resistivity will decrease after adding impurities.
Plastic deformation-Deformation is where the atoms are dislocated. It increases the resistivity of
a material since they are not able to move freely.
Pressure this is the process of applying force on a material. This also increases the resistivity of a
material since the atoms will not be in their regular position.
1
𝜎=
𝜌
Intrinsic conduction
Equilibrium there is the positive and the negative carrier in these materials at a given temperature
𝛾𝑛𝑝
Where
𝑟 − Gamma is a constant.
𝑟𝑛𝑖 2
𝑛𝑖 − Intrinsic concentration
𝑟𝑛𝑝 = 𝑟𝑛𝑖 2
𝑛𝑝 = 𝑛𝑖 2
𝛾𝑛 = 𝑛𝑞𝜇𝑛
𝛾𝑛 = 𝑝𝑞 𝜇𝑝
Where
𝑞 − Electron charge
𝜇𝑛 − Electron mobility
𝜇𝑝 − Hole mobility
Total conductivity
𝜎𝑖 = 𝜎𝑛 + 𝜎𝑝
= 𝑛𝑞𝜇𝑛 + 𝑝𝑞𝜇𝑝
= 𝑞(𝑛𝜇𝑛 + 𝑝𝜇𝑝 )
1
𝑅=𝜌
𝐴
𝐴 = 𝑤𝑇
1 1
𝜌= =
𝜎 𝑞(𝑛𝜇𝑛 + 𝑝𝜇𝑝)
1 𝐿
𝑅 = 𝑞(𝑛𝜇+𝑝𝜇
𝑝) 𝑊𝑇
1 𝐿
𝑅=
𝑞(𝑛𝜇 + 𝑝𝜇𝑝 ) 𝑊𝑇
1
𝑅𝑈 =
𝑞(𝑛𝜇𝑛 + 𝑝𝜇𝑝 )𝑇
𝑊
𝐺 = 𝑞(𝑛𝜇𝑛 + 𝑝𝜇𝑝 )𝑇
𝐿
𝑛𝑝 = 𝑛𝑖 2 At equilibrium
𝑁𝐷
Replacing n with Nd
𝑁𝐷 P=𝑛𝑖 2
𝜎𝑖𝑛𝑡 = 𝑛𝑞𝜇𝑛 + 𝑝𝑞 𝜇𝑝
𝑛𝑖 2
𝜎 = 𝑁𝐷 𝑞𝜇𝑛 + 𝑞𝜇
𝑁𝐷 𝑝
𝜎𝑛𝑡𝑦𝑝𝑒 = 𝑁𝐷 𝑞𝜇𝑝
Taking a uniformly diffused layer of the following structure we can calculate its resistance
Resistance is given by
𝑙
𝑅=𝜌
𝐴
𝐴 = 𝑊𝑇
1 𝐿
𝑅=
𝑁𝐷 𝑞𝜇𝑛 𝑊𝑇
1 𝐿
𝑅=
𝑁𝐷 𝑞𝜇𝑛 𝑇 𝑊
1
𝑅𝑛 =
𝑁𝐷 𝑞𝜇𝑛 𝑇
1 𝐿
𝑅=
𝑁𝑛 𝑞𝜇𝑝 𝑇 𝑊
Conductance (G)
1 1
𝐺= =
𝑅 1 𝐿
𝑁𝐷 𝑞𝜇𝑛 𝑇 𝑊
𝑊
𝑁𝐷 𝑞𝜇𝑛 𝑇 For N-type material
𝐿
No(X)
18
10
Compiled by OMAE OTERI ©2013 8
1015 X
dx Xj
𝑊
𝐺 = 𝑁𝐷 𝑞𝜇𝑛 𝑇
𝐿
𝑊
𝑑𝐺 = 𝑁𝐷 (𝑥)𝑞𝜇𝑛 𝑑𝑥
𝐿
Integrating both sides
𝑤
∫ 𝑑𝑔 = ∫ 𝑁𝐷 (𝑥)𝑞 𝜇𝑛 𝑑𝑥
𝑙
𝑊 𝑋
𝐺 = 𝑞𝜇𝑛 ∫ 𝑁 (𝑥)𝑑𝑥
𝐿 0 𝐷
𝑤 𝑥𝑗
= 𝑞𝜇𝑛 ∫ 𝑁 (𝑥)𝑑𝑥
𝐿 0 𝐷
𝜇𝑛 = 𝑚𝑒𝑎𝑛 𝑚𝑜𝑏𝑖𝑙𝑖𝑡𝑦
̅̅̅
𝑥𝑗 = 𝑑𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑡𝑜 𝑗𝑢𝑛𝑐𝑡𝑖𝑜𝑛
Resistance
1
𝑅=
𝐺
1
= 𝑤 𝑥𝑗
𝑞𝜇 𝑛 𝐿 ∫0 𝑁𝐷 (𝑥)𝑑𝑥
̅̅̅
1 𝐿
𝑅= 𝑥𝑗
𝑞𝜇 𝑛 ∫0 𝑁𝐷 (𝑥)𝑑𝑥
̅̅̅ 𝑊
• dielectric constant
• dielectric strength
• less tangent
Dielectric constant
𝐹
𝜀0 = 8.854 × 10−12
𝑀
1 𝐹
= × 10−9
36𝜋 𝑀
Permittivity can be used with the most insulating materials.
𝑞1 &𝑞2 Pt charge
𝜀 − Permittivity
Electric field E
Loss tangent
An electric is not supposed to allow current to pass through if there is a leakage of current, if
loses dielectric (insulating) properties.
This parameter indicates the capability of a material not to leak any current
Given by
1
tan 𝜕 =
𝑤𝑟𝑐
Dielectric strength
Ability of a material to withstand electric field applied across its terminals (two ends).
If the material is not able to withstand the electric field then it breaks down and starts
conducting.
All the above properties result into classification of materials in terms of electrical behavior.
• conductors
• insulators
• semiconductors
Conductors
Characteristics
All metals
Aluminum 0.0265Ω-𝜇𝑚
Copper-0.0172 Ω-𝜇𝑚
Insulators
Characteristics
• No free electrons
• Have covalent(ionic bonds)
• Fall in group 5-8
• Have a large forbidden band
• Have a very large energy gap
• Increase in temperature in some cases reduces resistance but to a very small extent. In
most cases temperature doesn’t affect the resistance of the insulators
• Resistivity ranges from 105 − 1017 𝛺𝑚
• The slow dielectric properties
Examples
𝑆𝑖 02
Semi-conductors
Characteristics
e.g. <3eV
Examples include
Carbon
Silicon
Germanium
Intrinsic
Pure
Silicon is commonly used because it is readily available also has a stronger electrical strengths
minimal leakage current
Extrinsic
P-types
Superionic conductors
Are materials are comely used in power generation for low level voltage and current ex is in a
cell
Dielectric
𝐴
𝑐=𝜀
𝑑
Ferroelectric
The electrical dipoles i.e. positive and negative orient themselves in a way that the material will
have two polarities i.e. positive and negative
These materials when exposed to an electric field their polarization will change.
P
Cohesive force
Polarization
The curve describes the behavior of a ferroelectric material when exposed to electric field.
After the material gets polarized one can be able to reduce the polarization to zero by using a
coercive force
Above the Curie temperature materials shows a linear relation then between polarization and
applied electric field
P
𝑐 − Curies constant
𝑇 − Current temperature
Pyro electric
When heat is applied to the material produces some voltage due to the orientation of the dipoles
Thermoelectric
Electrostriction
Piezo electric
This is a concept where when pressure is applied to a material it results to electric energy
(voltage)
For this case, the reverse is possible where applications of the electric energy across the material
will cause deformation
Electromagnetic material
These are materials that when exposed to electric energy they result to magnetic energy and vice
versa.
For instance passing current through a conductor will result to magnetic induction.
Several principles have been in different applications related to this concept which includes
Flemings rules, faraday, Lenz’s and Maxwell’s equations
Bio electromagnetism
This is a concept that deals with the response of living organisms to electric magnetic properties.
Magnetism
• Orbiting
• Spins
• Nucleus
Terminologies
Magnification
Magnetic susceptibility
Magnetic dipole
• Temperature
• Impurities
• Pressure
• Permeability
• Deformation
• Length
• Number of turns
• Diamagnetic
• Paramagnetic
• Ferromagnetic
• Antiferromagnetic
• Ferromagnetic
• Magneto-striction
Etching
𝛽 = 𝜇𝑜 𝐻
𝛽 = 𝜀𝑜 𝐻
Field strength
2. Magnetic field 𝛽
𝛽 = 𝜇𝐻
3. Magnetization
𝑚 = 𝜇𝑜 (𝐻 + 𝑀)
4. Magnetic susceptibility-magnitude of magnetization is proportional to applied field as
follows
𝑚 = 𝑥𝐻
1. Diamagnetism
H=0 H
Induction
ferro
para
Vacuum
diam
Magnetic field(H)
2. Para magnetism
Exhibited by substances which when placed in a magnetic field are magnetized parallel to the
field to an extent proportional to the field.
H=0
All ferromagnetic materials exhibit para magnetic behavior above their ferromagnetic curie
point.
H=0
Atoms may be antiferromagnetically coupled but with different magnetic moments giving rise to
net magnetic moment and could not result to magnetization
Domain region of small volume where there is a mutually alignment in the same direction of all
magnetic moments
B
Hysterisis loop
H H
Magnetic flux density vs. magnetic field strength for a Ferro that is subjected to forward and
reverse saturations
Low loss and high permeability. Easily magnetized and demagnetized. iron, low carbon and steel
Etching
Process of removing unwanted sections that have been exposed to photo lithography.
a. Wet etching
b. Dry etching
Categories of dielectrics
• Simple dielectrics
• Paradielectrics
• Ferro electrics