1. The forbidden energy gap between the 26. A transistor has a current gain of 0.

99 in
valence band and conduction band will be the CB mode. Its current gain in the CC mode
least in case of is

A. Metals A. 100
B. Semiconductors B. 99
C. Insulators C. 1.01
D. All of the above D. 0.99
Answer: Option A Answer: Option A
2. For a NPN bipolar transistor, what is the 27. Assertion (A): A p-n junction has high
main stream of current in the base region? resistance in reverse direction.
Reason (R): When a reverse bias is applied to
A. Drift of holes
B. Diffusion of holes p-n junction, the width of depletion layer
C. Drift of electrons increases.
D. Diffusion of electrons
Answer: Option B A. Both A and R are true and R is correct
explanation of A
3. Assertion (A): A JFET can be used as a B. Both A and R are true but R is not a correct
current source. explanation of A
Reason (R): In beyond pinch off region the C. A is true but R is false
D. A is false but R is true
current in JFET is nearly constant.
Answer: Option A
A. Both A and R are true and R is correct 28. In a bipolar transistor, the base collector
explanation of A junction has
B. Both A and R are true but R is not a correct
explanation of A A. Forward bias
C. A is true but R is false B. Reverse bias
D. A is false but R is true C. Zero bias
Answer: Option A
D. Zero or forward bias
4. For a P-N diode, the number of minority Answer: Option B
carriers crossing the junction depends on 29. Work function is the maximum energy
required by the fastest electron at 0 K to
A. Forward bias voltage
B. Potential barrier escape from the metal surface.
C. Rate of thermal generation of electron hole pairs A. True
D. None of the above B. False
Answer: Option C Answer: Option B
5. An electron in the conduction band

A. Has higher energy than the electron in the 30. The output, V-I characteristics of an
valence band
Enhancement type MOSFET has
B. Has lower energy than the electron in the
valence band
A. Only an ohmic region
C. Loses its charge easily
B. Only a saturation region
D. Jumps to the top of the crystal
C. An ohmic region at low voltage value followed
Answer: Option A
by a saturation region at higher voltages
6. What is the necessary a.c. input power from D. An ohmic region at large voltage values
preceded by a saturation region at lower voltages
the transformer secondary used in a half Answer: Option C
wave rectifier to deliver 500 W of d.c. power to
31. The amount of photoelectric emission
the load?
current depends on
A. 1232 W
A. Frequency of incident radiation
B. 848 W
B. Intensity of incident radiation
C. 616 W
C. Both frequency and intensity of incident
D. 308 W
radiation
Answer: Option A
D. None of the above
7. A thermistor is a Answer: Option C

A. Thermocouple 32. The sensitivity of human eyes is maximum

B. Thermometer at
C. Miniature resistance
A. White portion of spectrum
D. Heat sensitive explosive
Answer: Option C B. Green portion of spectrum
C. Red portion of spectrum
8. In an ideal diode there is no breakdown, no
D. Violet portion of spectrum
__________ current, and no forward Answer: Option B
__________ drop. 33. The sensitivity of human eyes is maximum

A. Reverse, voltage at
B. Forward, current
A. White portion of spectrum
C. Forward, voltage
B. Green portion of spectrum
D. Reverse, current
C. Red portion of spectrum
Answer: Option A
D. Violet portion of spectrum
Answer: Option B
9. The dynamic resistance of a forward biased 34. Which of the following could be the
p-n diode maximum current rating of junction diode by
126?
A. Varies inversely with current
B. Varies directly with current A. 1A
C. Is constant B. 10 A
D. Is either constant or varies directly with current C. 20 A
Answer: Option A
D. 100 A
10. Each cell of a static Random Access Answer: Option A
memory contains 35. Piezoelectric quartz crystal resonators
find application where
A. 6 MOS transistor
B. 4 MOS transistor, 2 capacitor A. Signal amplification is required
C. 2 MOS transistor, 4 capacitor B. Rectification of the signal is required
D. 1 MOS transistor and 1 capacitor C. Signal frequency control is required
Answer: Option A
D. Modulation of signal is required
Answer: Option B
11. Power diodes are generally
36. In the sale of diamonds the unit of weight
A. Silicon diodes
B. Germanium diodes is carat. One carat is equal to
C. Either of the above A. 100 mg
D. None of the above B. 150 mg
Answer: Option A
C. 200 mg
12. Silicon is not suitable for fabrication of
D. 500 mg
light emitting diodes because it is Answer: Option C
37. Forbidden energy gap in germanium at 0 K
A. An indirect band gap semiconductor
B. Direct band gap semiconductor is about
C. Wideband gap semiconductor A. 10 eV
D. Narrowband gap semiconductor B. 5 eV
Answer: Option A
C. 2 eV
13. When avalanche breakdown occurs
D. 0.78 eV
covalent bonds are not affected. Answer: Option D

A. True
B. False
Answer: Option B
14. Which variety of copper has the best 38. Assertion (A): A VMOS can handle much
conductivity? larger current than other field effect
transistors.
A. Pure annealed copper
B. Hard drawn copper Reason (R): In a VMOS the conducting
C. Induction hardened copper channel is very narrow.
D. Copper containing traces of silicon
Answer: Option A A. Both A and R are true and R is correct
explanation of A
15. Free electrons exist in B. Both A and R are true but R is not a correct
explanation of A
A. First band
C. A is true but R is false
B. Second band
D. A is false but R is true
C. Third band Answer: Option C
D. Conduction band
39. In a semiconductor diode, the barrier
Answer: Option D
offers opposition to
16. In a half wave rectifier, the load current
A. Holes in P-region only
flows
B. Free electrons in N-region only
A. Only for the positive half cycle of the input C. Majority carriers in both regions
signal D. Majority as well as minority carriers in both
B. Only for the negative half cycle of the input regions
signal Answer: Option C
C. For full cycle 40. As compared to bipolar junction
D. For less than fourth cycle
transistor, a FET
Answer: Option A
17. Assertion (A): In p-n-p transistor collector A. Is less noisy
current is negative. B.
termed Has better thermal stability
Reason (R): In p-n-p transistor holes are C. Has higher input resistance
D. All of the above
majority carriers.
Answer: Option D
A. Both A and R are true and R is correct 41. The most commonly used semiconductor
explanation of A
B. Both A and R are true but R is not a correct material is
explanation of A
A. Silicon
C. A is true but R is false
B. Germanium
D. A is false but R is true
Answer: Option B C. Mixture of silicon and germanium
D. None of the above
Answer: Option A
18. How many free electrons does a p type 42. Permalloy is
semiconductor has?
A. A variety of stainless steel
A. Only those produced by thermal energy B. A polymer
B. Only those produced by doping C. A conon-ferrous alloy used in aircraft industry
C. Those produced by doping as well as thermal D. A nickel an iron alloy having high permeability
energy Answer: Option D
D. Any of the above 43. Which one of the following is not a
Answer: Option A
characteristic of a ferroelectric material?
19. Light dependent resistors are
A. High dielectric constant
A. Highly doped semiconductor B. No hysteresis
B. Intrinsic semiconductor C. Ferroelectric characteristic only above the curie
C. Lightly doped semiconductor point
D. Either A or B D. Electric dipole moment
Answer: Option C Answer: Option C
20. In a bipolar transistor, the emitter base 44. In which of these is reverse recovery time
junction has nearly zero?

A. Forward bias A. Zener diode

B. Reverse bias B. Tunnel diode
C. Zero bias C. Schottky diode
D. Zero or reverse bias D. PIN diode
Answer: Option A Answer: Option C
45. Hall effect is observed in a specimen when
21. The depletion layer width of Junction
it is carrying current and is placed in a
A. Decreases with light doping magnetic field. The resultant electric field
B. Is independent of applied voltage
inside the specimen is
C. Is increased under reverse bias
D. Increases with heavy doping A. Normal to both current and magnetic field
Answer: Option C B. In the direction of current
22. An intrinsic silicon sample has 1 million C. Antiparallel to magnetic field
free electrons at room temperature. As the D. In arbitrary direction
Answer: Option A
temperature is increased

A. The number of free electrons increases

B. The number of free electrons increases but the
number of holes decreases
C. The number of free electrons and holes increase
by the same amount
D. The number of free electrons and holes increase
but not by the same amount
46. Fermi level is the amount of energy in
Answer: Option C
which
23. If too large current passes through the
diode A. A hole can have at room temperature
B. An electron can have at room temperature
A. All electrons will leave
C. Must be given to an electron move to conduction
B. All holes will freeze band
C. Excessive heat may damage the diode D. None of the above
D. Diode will emit light Answer: Option C
Answer: Option C
47. In monolithic ICs, all the components are
24. Which of the following has highest
fabricated by
resistivity?
A. Diffusion process
A. Mica B. Oxidation
B. Paraffin wax C. Evaporation
C. Air D. None
D. Mineral oil Answer: Option A
Answer: Option C
48. When diodes are connected in series to
25. At room temperature the current in an
increase voltage rating the peak inverse
intrinsic semiconductor is due to
voltage per junction
A. Holes
A. should not exceed half the breakdown voltage
B. Electrons
B. should not exceed the breakdown voltage
C. Ions
C. should not exceed one third the breakdown
D. Holes and electrons voltage
Answer: Option D
D. may be equal to or less than breakdown voltage
Answer: Option C