Chapter 18

1. Zener diode is used for.

a) Amplification b) Rectification 7. A transistor has a base current of 1 mA and

emitter current of 100 mA. The collector current
c) Stabilization will be.
d) Producing oscillations in oscillations a) 100 mA b) 1 mA
2. In common base amplifier, the phase c) 99 mA d) 10 mA
difference between the input singal voltage and
output signal voltage is. 8. An AND gate.

π a) Implements logic addition

a) b) π
4
b) Is equivalent to a series switching circuit
π
c) 0 d) c) Is equivalent to a parallel switching circuit
2
d) is a universal gate
3. In a full wave rectifier circuit operating from
50 Hz mains frequency, the fundamental 9. NPN transistor are preferred to PNP
frequency in the ripple would be. transistor because they have.
a) 50 Hz b) 100 Hz a) Low cost b) Low dissipation of energy
c) 25 Hz d) 70.7 Hz c) Capable of handling large power
4. Which of the following gates is a universal d) Electrons have high mobility than holes and
gate? hence high mobility of energy.
a) OR b) AND 10. If the base and collector of a transistor are
in forward basis, then it cannot be used as.
c) NOT d) NAND
a) A switch b) An amplifier
5. The voltage gain of the amplifier shown in
following figure is. c) An oscillator d) All of these
a) 10 b) 100 11. Semi conductor devices are.
c) 9.9 d) 1000 a) Temperature dependent
6. To make a full wave rectifier, the a.c. input be b) Voltage dependent
applied across.
c) Current dependent
a) BD b) BC
d) Power dependent
c) AD d) AC
12. How many diodes are used in a bridge 18. The barrier potential of silicon diode at
rectifier? room temperature is.

a) 1 b) 2 a) 0.3 V b) 0.7 V

c) 3 d) 4 C) 1 V d) 2 V

13. The decimal equivalent of 1111 is. 19. The width of depletion region of a junction.

a) 25 b) 35 a) Increases under forward bias

c) 15 d) 5 b) Is independent of applied voltage

14. How many diodes are used in centre tape c) Increases under revere bias
transformer rectifier?
d) None of these
a) 1 b) 2
20. The p-n junction, on forward biasing acts
c) 3 d) 4 like a.

15. Diffusion of free electrons across the a) Low resistor b) High resistor
unbiased p-n junction produces.
c) Inductor d) Capacitor
a) Forward bias b) Reverse bias
21. In the forward region, the voltage at which
c) Break down d) Depletion region the current starts to increase rapidly is called.

16. A depletion region of a semiconductor diode a) Barrier potential

is due to.
b) Knee voltage
a) Absence of current carriers
c) Applied voltage
b) Reverse biasing
d) None of these
c) Forward biasing
22. A non-conduction semiconductor diode is.
d) Crystal doping
a) Forward biased b) Poorly biased
17. The barrier potential across the p-n junction
is created by. c) Reverse biased d) None of these

a) Majority carriers 23. The knee voltage of a semiconductor diode

is approximately equal to.
b) Minority carries
a) Applied voltage b) Barrier potential
c) Fixed rows of oppositely charged ions
c) Breakdown voltage d) Forward voltage
d) Depletion layer
24. Which one of the following statements is 30. A photodiode us used for.
correct?
a) Photo detection
a) A p-n junction conducts only when it correct?
b) Automatic switching
b) A p-n junction does not conduct when it is
reverse biased c) Logic circuits

c) A p-n junction is unidirectional in action d) Optical communication equipment

d) All of these e) All of these

25. A p-n junction of semiconductor diode 31. The term transistor stands for.
cannot be used to. a) Transfer of resistance
a) An amplifier b) A rectifier b) Transfer of voltage
c) A detector d) Fan open or close switch c) Transfer of power
26. A photo diode is usually made from. d) Transfer of current
a) Bismuth b) Antimony 32. The emitter of a transistor is generally
c) Silicon d) None of these doped the heaviest because it.

27. A light emitting diode (LED) is made from. a) Has to dissipate maximum power

a) Gllium arsenide (GaAs) b) Has to supply the charge carriers

b) Gallium phosphide (GaP) c) Is the first region of the transistor

c) Gallium arsenide phosphide (GaAsP) d) Must posses low resistance

d) All of these 33. For proper working of transistor in normal

circuit.
28. A light emitting diode (LED) emits light only
when. a) Emitter-base junction is reverse biased an
collector base junction is forward biased
a) Forward biased b) Reverse biased
b) emitter-base junction is forward biased and
c) Unbiased d) None of these collector base junction is reverse biased

29. A photo-diode can switch its current ON or c) Emitter-base junction is forward biased and
OFF in. collector base junction is forward biased

a) Milli-seconds b) Micro-seconds d) None of these

c) Nano-seconds d) Centi-seconds 34. Transistor is an electronic device which has.

a) Two terminals b) Three terminals 40. Which one of the following is correct for a
common emitter (CE) amplifier.
c) Four terminals d) None of these
a) Its current gain β is high
35. For common emitter configuration of n-p-n
transistor, the current gain β is given by. b) It has very high voltage gain

IC IC c) It produces high power gain

a) b)
IB IE
d) All of these
IE IB
c) d) 41. Since the input resistance of an ideal OP-
IB IE amplifier is infinite.
36. The emitter, collector and base currents IE, a) Its output resistance is zero
IC and Is respectively are related as.
b) It becomes current controlled device
a) IE= IC-IB b) IB=IE+IC
c) Is input current is zero
c) IE=IC+IB d) IC=IE+IB
d) None of these
37. When the emitter-base junction of a
transistor is reverse biased, collector current. 42. An open loop OP-amplifier has output
voltage V0 and difference between non
a) Reverses b) Increases inverting input voltage Vi its open loop gain is
given by.
c) Decreases d) Stops
V0 Vi
38. The emitter-base junction of a transistor is a) AOL = b) AOL =
forward biased and collector base junction is Vi V0
reverse biased. If the base current is increased,
c) AOL = V0 xVi d) AOL = Vi+V0
its.
43. The closed loop gain of an OP-amplifier is G=
a) IC will decrease b) VCE will increase
R2
- the negative sign shows that output signal
c) IC will increase d) VCC will increases R1
is out of phase w.r.t. input signal by.
39. The common emitter amplifier has the
characteristic that it produces. a) 450 b) 900

a) Low voltage gain c) 1800 d) 2700

b) Moderate power 44. Linear integrated circuits (LICs) find their

applications in.
c) Signal phase reversal
a) Operational amplifier
d) Low current gain
b) Voltage comparators
c) Multipliers d) All of these a) Stop a signal b) Recompliment a signal

45. The emitter base junction of a transistor is c) Act as a universal gate

usually.
d) Invert an input signal
a) Forward biased b) Reverse biased

c) Non-conduction

d) Working in the break down region

46. For normal operation of the transistor,

collector-base junction has to be.

a) Forward biased b) Reverse biased

c) Non-conduction

d) Operating in the breakdown region

47. The current gain of transistor is the ratio of.

a) Collector current to emitter current

b) Collector current to base current

c) Base current to emitter current

d) Emitter current to collector current

48. The output of 2 input OR gats is 0 only when

its.

a) Both inputs are 0

b) Either input I s1

c) Both inputs are 1

d) Either input is 0

49. An XOR gate produces 1 output only when

its two inputs are.

a) High b) Low

c) Different d) Same

50. The only function of a NOT gate is to.