S.

NO Instructions Answer
1. Which of the following is created when trivalent impurities are added
to a semiconductor
Free electrons
Holes
Bound electrons
Valence electrons
2. What is the random motion of free electrons and holes due to thermal
agitation called?
Pressure
Diffusion
Ionisation
None of the above
3. In a loaded Zener regulator, the series resistor has a current of 120
mA.If the load current is 45mA, how much is the Zener current?
75mA
165mA
120mA
Cannot be determined.

4. The RMS value of a half wave rectifier current is 10 A. Its value for
full wave rectification would be
10 A
14.14 A
(20/π) A
20 A.
5. Average value of a fullwave rectified voltage with a peak value of 60V
is equals to
23 V
32.14 V
38.19 V
12.45 V
6. Which of the following is assumed in the approximate analysis of a
voltage divider circuit
IB is essentially zero amperes
R1 and R2 are considered to be series elements.
βRE ≥ 10R2
All of the above
7. For a fixed bias circuit with VCC=12V, RB=240K, RC=2.2K and β =
50, calculate the value of IBQ.
47.08mA
47.08µA
50 µA
0A
8. For a fixed bias circuit with VCC=12V, RB=240K, RC=2.2K and β =
50, what is the value of VBC
6.13 V
-6.13 V
7V
-7 V

9. For a Emitter bias circuit with VCC=20V, RB=430K, RC=2K, RE =

1K and β = 50, calculate the value of ICQ.
2.24 mA
2.24 µA
10.05 mA
10.05 µA
10. The wavelength of the light emitted and its color depends on the
forward voltage
forward current
band gap energy of the material forming P-N junction
none of the above
11. If one of the diodes in a bridge full-wave rectifier opens, the output is
approximately
0V
one-fourth the amplitude of the input voltage
a half-wave rectified voltage
a 120Hz voltage
12. A JFET always operates with
gate to source pn junction reverse-biased
gate to source pn junction forward-biased
the drain connected to ground
the gate connected to source
13. Which of the following is not a physical component of an electronic
circuit?
Capacitor
Resistor
Temperature
Inductor

14. Band gap Energy for Silicon and Germanium at Room Temperature
(300°K) are ____ & ____ respectively: –
56eV, 1.1eV
72eV, 1.2eV
1eV, 0.72eV
1eV, 0.56eV
15. Assertion: A JFET can be used a current source
 Reason: In beyond pinch off region the current in JFET is nearly
constant.
Both A and R are true, and R is correct explanation of A.
Both A and R are true, but R is not the correct explanation of A.
A is true but R is false
A is false but R is true
16. The DC Current Gain of a Transistor is
Ratio of Emitter Current to Collector Current
Ratio of Base Current to Emitter Current
Ratio of Collector Current to Base Current
Ratio of Base Current to Collector Current

17. The total power dissipated by a transistor is a product of collector

current and
Supply Voltage
0.7V
Collector – Emitter Voltage
Base – Emitter Voltage
18. The output impedance of Common Emitter Configuration is
Low
Very Low
High
Zero
19. BJT is a _________ and a FET is ________ Device
Bipolar and Unipolar
Bipolar and Bipolar
Unipolar and Unipolar
Unipolar and Bipolar
20. FETs are widely applicable in oscilloscopes and voltmeters as an input
amplifier as compared to bipolar transistors due to ______.
ability of minimizing the loading effect with high input resistance
ability of maximizing the loading effect with high input resistance
ability of minimizing the loading effect with low input resistance
ability of maximizing the loading effect with low input resistance
21. The operation of D-MOSFET under the application of positive gate is
also known as
Depletion Mode
Enhancement Mode
Depletion-Enhancement Mode
None of the above
22. Which is the most significant current generating parameter in
common drain JFET amplifier?
gmVi
 gmVgs
gmrd
gm (1 + Vgs)
23. Which resistance plays a significant role in stabilization of Q-point for
self-biasing circuit of BJT?
Emitter resistance
Collector resistance
Base resistance
Drain resistance

24. If biasing is not done in an amplifier circuit, it results in ……………

Decrease in the base current

Excessive collector bias

Unfaithful amplification
None of the above
25. The circuit that provides the best stabilization of operating point
is …………
Base resistor bias
Collector feedback bias
Potential divider bias
None of the above
26. The disadvantage of base resistor method of transistor biasing is
that it …………
Is complicated
Is sensitive to changes in ß
Provides high stability
None of the above
27. Thermal runaway occurs when ……….
Collector is reverse biased
Transistor is not biased
Emitter is forward biased
Junction capacitance is high
28. The input impedance of a transistor connected in ……………..
arrangement is the highest
common emitter
common collector
common base
none of the above

29. The phase difference between the input and output voltages of a
transistor connected in common emitter arrangement is ………………
0
90
 180
360
30. ICEO = (………) ICBO
ß
1+ a
1+ß
none of the above
31. Single-element semiconductors are characterized by atoms with ____
number of valence electrons.
2
3
4
5
32. As the forward current through a silicon diode increases, the internal
resistance
Decreases
Increases
Does not change
None of the Above
33. One eV is equal to ________ J.

6.02 × 1023
1.6 × 10–19

6.25 × 1018
1.66 × 10–24

34. What does a high resistance reading in both forward- and reverse-bias
directions indicate?
Short Circuit diode
Open Circuit diode
Defective diode
None of the above
35. What is the resistor value of an ideal diode in the region of
conduction?
0Ω
∞Ω
100Ω
Undefined
36.
What is the power dissipation of a silicon diode having ID = 30mA

26mW
24mW
 21mW
19mW
37. Calculate static resistance RS of a diode having ID = 20 mA and VD =
0.65 V.
30.76Ω
32.5mΩ
30.76mΩ
32.5Ω
38. Each diode in a center-tapped full-wave rectifier is ________ -biased
and conducts for ________ of the input cycle.
forward, 90º
reverse, 90º.
forward, 180º
reverse, 180º

39. Determine the peak for each of the half cycles of the output waveform

16 V, –4 V

16 V, 4 V
–16 V, 4 V
–16 V, –4 V
40. PIV rating of 1N4007 rectifier diode is
1000V
700V
500V
2000V
41. What is the logic function of this circuit
 Positive logic OR gate

Positive logic AND gate

Negative logic AND gate

Negative logic OR gate
42. If the ac supply is 60 Hz, what will be the ripple frequency out of the
half-wave rectifier
50Hz
60Hz
100Hz
120Hz
43. Determine Vo if E1 = E2 = 8 V.

0V
8V
10V
-8V

44.
 Determine the current through each diode if E1 = E2 = 0 V.

9mA
4.65mA
0.7mA
0A
45. In the active region, while the collector-base junction is ________-
biased, the base-emitter is ________-biased
forward, forward
forward, reverse
reverse, reverse
reverse, forward
46. Determine the value of α when β = 150
0.99
1
1.01
10.1
47. To obtain both voltage gain and current gain which configuration is
used

Common Collector
Common Base
Common Emitter
All of the Above
48. For A properly biased pnp transistor, let IC = 10 mA and IE = 10.2
mA. What is the level of IB?
200µA
20.2mA
0.2A
200mA

49. Which of the following is true in construction of a transistor?

 Tthe collector dissipates lesser power
the emitter supplies minority carriers
the collector collects minority charge carriers
the collector is made physically larger than the emitter region
50. In the saturated region, the transistor acts like a_________
poor transistor
amplifier
closed switch
open switch
51. In CB configuration, the value of α=0.98A. A voltage drop of 4.9V is
obtained across the resistor of 5KΩ when connected in collector
circuit. Find the base current.
0.01mA
0.02mA
0.07mA
0.05mA
52. The base current amplification factor β is given by
IC/IB
IB/IC
IE/IB
IB/IE
53. In ICEO, what does the subscript ‘CEO’ mean?

collector to base emitter open

emitter to base collector open
emitter to collector base open
collector to emitter base open

54. The small amount of current which flows even when base current
IB=0 is called
IBEO
ICBO
ICEO
IC
55. The base emitter voltage in a cut off region is_________

less than 0.7V

equal to 0.7V
greater than 0.7V
cannot be predicted
56. A semiconductor has ………… temperature coefficient of resistance
Positive
Negative
 Zero
None of the above
57. When a pure semiconductor is heated, its resistance

Increases
Decreases
Remains same
None of the Above
58. When a pentavalent impurity is added to a pure semiconductor, it
becomes
An insulator
An intrinsic semiconductor
p-type semiconductor
n-type semiconductor

59. Addition of trivalent impurity to a semiconductor creates many

Holes
Free electrons
Valence electrons
Bound electrons
60. In a semiconductor, current conduction is due to

Only holes
Only free electrons
Both a and b
None of the above
61. What is the logic function of this circuit

Positive logic OR gate

Positive logic AND gate

 Negative logic AND gate
Negative logic OR gate
62. In a semiconductor, current conduction is due to
Only holes
Only free electrons
Both holes and Electrons
None of the above
63. If peak voltage on a bridge full wave rectifier circuit is 5V and diode
cut-in voltage is 0.7, then peak inverse voltage on diode will be
_________
4.3V
5.7V
10V
5V
64. Which of the following materials can be used to produce infrared
LED?
Si
GaAs
CdS
PbS
65. Determine the value of α when β = 150
0.99
1
1.01
10.1
66. Which of the following is true in construction of a transistor?
The collector dissipates lesser power
the emitter supplies minority carriers
the collector collects minority charge carriers
the collector is made physically larger than the emitter region
67. In CB configuration, the value of α=0.98A. A voltage drop of 4.9V is
obtained across the resistor of 5KΩ when connected in collector
circuit. Find the base current.
0.01mA
0.02mA
0.07mA
0.05mA
68. A semiconductor has ………… temperature coefficient of resistance

Positive
Negative
Zero
 None of the above

69. How is BJT used as a faster switch?

By operating it in the saturation and cut-off region
By operating it in the active and cut-off region
By using it in strong saturation
By decreasing its ON resistance
70. What is the role of emitter bypass capacitance in the transistor
amplifying circuit?
To prevent damage of emitter resistance from variation in voltage
To prevent emitter from over voltage
To increase gain
To increase load to transistor circuit
71. Consider the following circuit. __________ provides DC isolation.
_____________ prevents a decrease in voltage gain. _____________
is used to control the bandwidth.

C3, C1, C4
C4, C1, C2
C2, C3, C2
C4, C3, C2
72. A voltage amplifier has a voltage gain of 100. What will be gain at
3dB cut-off frequencies?
70.7
7.07
80.7
45.7
73. Which of the following is not the characteristic of op-amp

High Input impedance

Low output impedance
Low CMRRR
High Bandwidth
74. A certain noninverting amplifier has Ri of 1 kΩ and Rf of 100 kΩ. The
closed-loop voltage gain is ………
100,000
1000
101
100
75. In differential-mode, …………….
opposite polarity signals are applied to the inputs
the gain is one
the outputs are of different amplitudes
only one supply voltage is used
76. If ADM = 3500 and ACM = 0.35, the CMRR is ……….
1225
10,000
12.25
122.5

77. Which of the following class have a theoretical efficiency of 78.5%?

Class A
Class B
Class C
Class D
78. How do we obtain sinusoidal output out of a class B amplifier?
By using non-sinusoidal inputs
By biasing it in the active region
By utilizing two transistors
By adding a capacitor to the output
79. Phase shift provided by one phase shift network in RC phase shift
oscillator in 3 stage is ___________
180 degrees
120 degrees
60 degrees
30 degrees
80. Frequency of oscillation for three section RC phase shift network is
given by ___________
1/(ᴨ√6 RC)
2/(ᴨ√6 RC)
1/(2√6 RC)
1/(2ᴨ√6 RC)
81. For full wave rectifier the ripple factor is ------
48%
67.5%
121%
 58%
82. To reduce the ripple factor the Capacitance value need to be
Increase
Decrease
Constant
Non of the Above
83. For getting regulated voltage of -15V which of the following IC is
used
7815
7915
7215
LM315

84. LM317 IC is
Fixed positive voltage regulator
Fixed negative voltage regulator
Adjustable voltage regulator
None of the Above
85. Which of the following device acts as variable capacitor in reverse
bias condition
Thermistor
Tunnel Diode
Photo Diode
Varactor Diode
86. For Photodiode which of the following statement is True
Reverse current is directly proportional to the intensity of falling light
Reverse current is inversely proportional to the intensity of falling
light
Forward current is inversely proportional to the intensity of falling
light
Forward current is directly proportional to the intensity of falling light
87. An SCR is a
four layer, four junction device
four layer, three junction device
four layer, two junction device
three layer, single junction device
88. If the cathode of an SCR is made positive with respect to the anode &
no gate current is applied then
all the junctions are reversed biased
all the junctions are forward biased
only the middle junction is forward biased
only the middle junction is reversed biased
89. Which of the following is one of the suitable application of Varactor
 Diode
Relaxation Oscillator
Inverters
High speed switching device
FM Modulator
90. For Op-Amp based Differentiator circuit what will be the output if a
Square wave is applied
Triangular Wave
Sine Wave
Spike Wave
Cosine Wave
91. A differential amplifier ……………..
is a part of an Op-amp
has one input and one output
has two outputs
answers (1) and (2)
92. When a differential amplifier is operated single-ended, …………
is a part of an Op-amp
has one input and one output
has two outputs
answers (1) and (2)
93. In the common mode, ……………
both inputs are grounded
the outputs are connected together
an identical signal appears on both the inputs
the output signal are in-phase
94. With zero volts on both inputs, an OP-amp ideally should have an
output ……….
equal to the positive supply voltage
equal to the negative supply voltage
equal to zero
equal to CMRR
95. The output of a particular Op-amp increases 8V in 12μs. The slew rate
is …
90 V/μs
0.67 V/μs
1.5 V/μs
0.76 V/μs
96. Negative feedback ………..
increases the input and output impedances
increases the input impedance and bandwidth
decreases the output impedance and bandwidth
does not affect impedance or bandwidth
97. For a base current of 10 μA, what is the value of collector current in
 common emitter if βdc = 100
10 μA
100 μA
10 mA
1 mA
98. The action of JFET in its equivalent circuit can best be represented as
a
current controlled current source
current controlled voltage source
voltage controlled current source
voltage controlled voltage source
99. The current gain of a bipolar transistor drops at high frequencies
because of …………..
Transistor capacitances
High current effects in the base
Parasitic inductive elements
the early effect
100. Generally, the gain of a transistor amplifier falls at high frequencies
due to …………….
Skin effect
Coupling capacitor at the input
Internal capacitance of the device
Coupling capacitor at the output
101. In a transistor leakage current mainly depends on …………….
Doping of base
size of emitter
rating of the transistor
Temperature
102. In an OP-amp differentiator
The amplitude of output is proportional to rate of change of input
The amplitude of output is proportional to input
Output occurs when input is finite and constant
Polarity of input and output is the same
103. Class AB operation is often used in power large signal amplifies in
order to ……………..
Get maximum efficiency
Remove even harmonics
Overcome a crossover distortion
Reducing collector dissipation
104. Which of the following amplifier circuit using junction transistor has
the best gain?
Common base
Common emitter
Common collector
 All have the same gain
105. An oscillator employs ……………… feedback
Positive
Negative
Neither positive nor negative
Data insufficient
106. In a phase shift oscillator, we use …………. RC sections
One
Two
Three
Four
107. In a phase shift oscillator, the frequency determining elements are
…………
L and C
R, L and C
R and C
None of the above
108. A Wien bridge oscillator uses ……………. feedback
Only positive
Only negative
Both positive and negative
None of the above
109. The input impedance of a transistor is ………….
high
low
very high
almost zero
110. IC = αIE + ………….
IB
ICEO
ICBO
βIB
111. The relation between β and α is …………..
β = 1 / (1 – α )
β = (1 – α ) / α
β = α / (1 – α )
β = α / (1 + α )
112. The phase difference between the input and output voltages of a
transistor connected in common emitter arrangement is ………………
0o
180o
90o
270o
113. The phase difference between the input and output voltages of a
 transistor connected in common collector arrangement is
………………
0o
180o
90o
270o
114. When transistors are used in digital circuits they usually operate in the
………….
active region and saturation regions
breakdown region
saturation and cutoff regions
linear region and cutoff regions
115. To operate properly, a transistor’s base-emitter junction must be
forward biased with reverse bias applied to which junction?
Collector-emitter
Base-collector
Base-emitter
Collector-base
116. The C-B configuration is used to provide which type of gain?
voltage
current
resistance
power
117. What is the current gain for a common-base configuration where IE =
4.2 mA and IC = 4.0 mA?
16.8
1.05
0.2
0.95
118. The input/output relationship of the common-collector and common-
base amplifiers is ………..
270 degrees
180 degrees
90 degrees
0 degrees
119. The parameter hie stands for input impedance in ………..
CB arrangement with output shorted
CC arrangement with output shorted
CE arrangement with output shorted
None of the above
120. The hfe parameter is called ……………. in CE arrangement with
output shorted
Voltage gain
Current gain
 Input impedance
None of the above
121. In order to determine hfe and hie parameters of a transistor, …………
is an a.c. short-circuited
Input
Output
Input as well as output
None of the above
122. The maximum efficiency of resistance loaded class A power amplifier
is ……..
5%
50%
30%
25%
123. A 2-transistor class B power amplifier is commonly called ………..
amplifier
Dual
Push-pull
Symmetrical
Differential
124. Class ………….. operation gives the maximum distortion
A
B
C
AB
125. The size of a power transistor is made considerably large to …………
Provide easy handling
Dissipate heat
Facilitate connections
None of the above
126. The push-pull circuit must use …………… operation
Class A
Class C
Class B
Class AB
127. The reverse current in a diode is of the order of ……………….
kA
mA
μA
A
128. A zener diode is used as …………….
an amplifier
a voltage regulator
a rectifier
 a multivibrator
129. A zener diode utilizes ……….. characteristics for its operation.
forward
reverse
both forward and reverse
none of the above
130. The ripple factor of a half-wave rectifier is …………………
2
1.21
2.5
0.48
131. The PIV rating of each diode in a bridge rectifier is ……………… that
of the equivalent centre-tap rectifier
one-half
the same as
twice
four times
132. The maximum efficiency of a half-wave rectifier is ………………..
40.6 %
81.2 %
50 %
25 %
133. There is a need of transformer for ………………..
half-wave rectifier
centre-tap full-wave rectifier
bridge full-wave rectifier
none of the above
134. The leakage current in a diode is due to …………….
minority carriers
majority carriers
junction capacitance
all of the above
135. When a pure semiconductor is heated, its resistance …………..
Increases
Decreases
Remains the same
Can’t say
136. As the doping to a pure semiconductor increases, the bulk resistance of
the semiconductor ………..
Remains the same
Increases
Decreases
None of the above