Scribd
Upload
39 views64 pages

Mosfet Feee

Uploaded by

KAUSHIK KADIUM
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
39 views64 pages

Mosfet Feee

Uploaded by

KAUSHIK KADIUM
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 64

MODULE 3

MOSFET

MOSFET

Laptop motherboard

MOSFET

MOSFET
Metal oxide semi conductor Field effect transistor
(MOSFET)
CONTENT
 Metal oxide semiconductor field effect
transistor (MOSFET):
 Operation of NMOS and PMOS FETs,
 MOSFET as an amplifier and switch.
INTRODUCTION
 The metal–oxide–semiconductor field-effect
transistor (MOSFET) is a type of transistor used
for amplifying or switching electronic signals.
 MOSFET is a four-terminal device with source
(S), gate (G), drain (D), and body (B) terminals.
 The body (or substrate) of the MOSFET is often
connected to the source terminal, making it a
three-terminal device like other
field-effect transistors.
 MOSFET is a uni-polar device, as the current
conduction is due to only majority charge
carriers.
BACKGROUND
 Concept of FET was introduced in 1930
 The device was developed in 1960
 A particular FET named as Metal Oxide
Semiconductor Field Effect Transistor
(MOSFET) in 1970 which become very
popular
ADVANTAGES OF MOSFET
 MOS transistors can be made quite
small and occupy a small area on the IC
chip
 Manufacturing process is relatively
simple
 Digital logic and memory functions can
be implemented with the circuits using
only MOSFETS i.e. resistors and diodes
are not required
ADVANTAGES OF MOSFET
 Most of the VLSI circuits that are
manufactured at present use MOS
technology
 MOSFETS are used in Microprocessors,
memory chips and analog IC’s
 MOSFET is a symmetrical device where
drain and source are interchangeable
ADVANTAGES OF MOSFET

 The major advantage of the MOSFET


transistor is that it uses low power for
accomplishing its purpose.
 The dissipation of power in terms of loss is
very small, which makes it a major
component in the modern computers and
electronic devices like the cell phones, digital
watches, small robotic toys and calculators.
 MOSFETs have input impedance much higher
than that of JFETs. This is due to negligibly
small leakage current.
 MOSFET has higher speed of operation.
TYPES OF MOSFET’S
 Enhancement MOSFET (E-MOS)
 N-channel E-MOS
 P-channel E-MOS
 Depletion MOSFET (D-MOS)
 N-channel D-MOS
 P-channel D-MOS
PHYSICAL STRUCTURE OF N-MOS TRANSISTOR
(ENHANCEMENT MODE)
CROSS SECTIONAL VIEW OF N-MOS

Typically length L = 1 to 10 m, width W = 2 to 500 m, and the thickness of the
oxide layer is in the range of 0.02 to 0.1 m.
BASIC OPERATION
 Channel is absent when VGS=0
i.e. current between drain and source is 0
• The enhancement-type NMOS transistor with a positive voltage applied
to the gate. An n channel is induced at the top of the substrate beneath
the gate.
 With positive VGS and positive VDS
 VT=Threshold Voltage
• An NMOS transistor with vGS > Vt and with a small vDS applied. The device
acts as a conductance whose value is determined by vGS. Specifically, the
channel conductance is proportional to vGS - Vt, and this iD is proportional to
(vGS - Vt) vDS. Note that the depletion region is not shown (for simplicity).
WHEN VDS IS INCREASED KEEPING VGS FIXED
• Operation of the enhancement NMOS transistor as vDS is increased. The
induced channel acquires a tapered shape and its resistance increases as vDS is
increased. Here, vGS is kept constant at a value > Vt.
 When VDS is increased:
 The voltage between the gate and
point along the channel decreases from
VGS at the source to (VGS-VDS) at the
drain end.
 So, channel width is not uniform
 VGS-VDS=VT
 V =V -V i.e. pinch off
DSSat GS T
The drain current iD versus the drain-to-source voltage vDS for an
enhancement-type NMOS transistor operated with vGS > Vt.
(a) An n-channel enhancement-type MOSFET with vGS and vDS applied and
with the normal directions of current flow indicated. (b) The iD - vDS
characteristics for a device with Vt = 1 V and k’n(W/L) = 0.5 mA/V2.
For levels of VGS greater than Threshold Voltage VT

K= constant which is a function of the construction


of the device
The iD - vGS characteristic for an enhancement-type NMOS transistor in
saturation (Vt = 1 V and k’n(W/L) = 0.5 mA/V2).
Increasing vDS beyond vDSsat causes the channel pinch-off point to move
slightly away from the drain, thus reducing the effective channel length
(by L).
TRANSFER AND DRAIN CHARACTERISTICS OF N-
CHANNEL ENHANCEMENT TYPE MOSFET
SYMBOL OF N-CHANNEL ENHANCEMENT TYPE
MOSFET
PHYSICAL STRUCTURE OF ENHANCEMENT TYPE
MOSFET (P CHANNEL)
P-CHANNEL ENHANCEMENT TYPE
MOSFET
SYMBOL OF P-CHANNEL ENHANCEMENT TYPE
MOSFET
PHYSICAL STRUCTURE OF DEPLETION TYPE MOSFET
(N CHANNEL)
BASIC OPERATION

Drain saturation current flows in the channel


Recombination takes place as a result, reduction in
channel current occurs (depletion phenomenon)
Enhancement phenomenon occurs in depletion MOSFET
i.e. increase in conduction of current takes place.
V-I CHARACTERISTICS OF N-CHANNEL DEPLETION
TYPE MOSFET
TRANSFER AND DRAIN CHARACTERISTICS OF N-
CHANNEL DEPLETION TYPE MOSFET
SYMBOL OF N-CHANNEL DEPLETION TYPE MOSFET
SYMBOL OF P-CHANNEL DEPLETION TYPE MOSFET
CHARACTERISTICS OF P-CHANNEL DEPLETION MODE
MOSFET
MOSFET AS A SWITCH

• N-channel, Enhancement-mode MOSFET (e-MOSFET)


operates using a positive input voltage and has an
extremely high input resistance (almost infinite)
making it possible to interface with nearly any logic
gate or driver capable of producing a positive
output.
• The operation of the enhancement-mode
MOSFET, or e-MOSFET, can best be
described using its i-v characteristics
curves
• When the input voltage, ( VIN ) to the gate
of the transistor is zero, the MOSFET
conducts virtually no current and the
output voltage ( VOUT ) is equal to the
supply voltage VDD.
• So the MOSFET is “OFF” operating within
its “cut-off” region.
MOSFET Characteristics
Curves
ON-state gate voltage:
•The minimum ON-state gate voltage (VGS​) required to keep the MOSFET
in the "ON" state can be determined using the v-i transfer curves.
When VIN​is HIGH (equal to VDD):
•The MOSFET's operating point (Q-point) moves to point A on the load line.
•Drain current (ID) increases to its maximum value because the channel
resistance decreases.
•ID becomes independent of VDD​and depends only on VGS​.
MOSFET behaves like a closed switch:
•Even though the channel resistance reduces significantly, it doesn’t
become zero due to the small ON-resistance (RDS(on)​).
When VIN is LOW (or zero):
•The MOSFET's Q-point moves from point A to point B along the load line.
•The channel resistance becomes very high, so the MOSFET acts like an open
circuit, and no current flows through the channel.
•MOSFET as a solid-state switch:
•If the gate voltage (VIN​) toggles between HIGH and LOW values, the MOSFET
functions like a "Single Pole Single Throw" (SPST) switch.
•In this switching action, the MOSFET can either open or close the circuit,
depending on the input voltage.
1. Cut-off Region
• Here the operating conditions of the transistor are zero input
gate voltage ( VIN ), zero drain current ID and output
voltage VDS = VDD.
• Therefore for an enhancement type MOSFET the conductive
channel is closed and the device is switched “OFF”.

• Then we can define the cut-off region or “OFF mode” when using an
e-MOSFET as a switch as being, gate voltage, VGS < VTH and ID = 0.
• For a P-channel enhancement MOSFET, the Gate potential must be
more positive with respect to the Source.
Saturation Region
• In the saturation or linear region, the
transistor will be biased so that the
maximum amount of gate voltage is
applied to the device which results in
the channel resistance RDS(on) being as
small as possible with maximum
drain current flowing through the
MOSFET switch.
• Therefore for the enhancement type
MOSFET the conductive channel is
open and the device is switched
• Above shows a very simple circuit for switching a
resistive load such as a lamp or LED.
• But when using power MOSFETs to switch either
inductive or capacitive loads some form of
protection is required to prevent the MOSFET device
from becoming damaged.
• Driving an inductive load has the opposite effect
from driving a capacitive load.
• For example, a capacitor without an electrical
charge is a short circuit, resulting in a high “inrush”
of current and when we remove the voltage from an
inductive load we have a large reverse voltage build
up as the magnetic field collapses, resulting in an
induced back-emf in the windings of the inductor.
• Then we can summaries the switching
characteristics of both the N-channel and P-channel
PREVIOUS YEAR END EXAM
QUESTIONS
1. Explain with neat sketch the
construction and operation of MOSFET
2. Enhancement and Depletion type of
MOSFET
3. Explain the advantage of MOSFET
REFERENCES
1. https://en.wikipedia.org/wiki/MOSFET
2. A text book on Microelectronic Circuits - Fifth Edition
Sedra/Smith
3. http://ecetutorials.com/analog-electronics/mosfet-
introduction-types-and-advantages/
4. http://jas.eng.buffalo.edu/
5. http://www.diodes.com/mosfet_transistor_menu.html
6. http://www.electronics-tutorials.ws/transistor/tran_7.html
7. http://slideplayer.com/slide/download/
8. https://www.youtube.com/watch?v=KsG_rsGF2g8
9. https://www.youtube.com/watch?v=lNuS8mddhs0
10. https://www.youtube.com/watch?v=PVkZUS8RmRQ
11. https://www.youtube.com/watch?v=9z9j0ewek30
12. https://www.youtube.com/watch?v=muvucBFQzMw
13. https://www.youtube.com/watch?v=ammKlyoLYUg

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy