Scribd
Upload
25 views3 pages

Indian Institute of Technology Ropar Electrical Engineering Department

This document provides instructions for a lab exercise to study the voltage-current (V-I) characteristics of a PN junction diode. The objectives are to draw and analyze the V-I curve of the diode and calculate its static and dynamic resistance. Students will connect a diode, resistor, power supply and measurement equipment in forward and reverse bias configurations. They will record voltage and current readings to plot the V-I curves and determine values like threshold voltage, cut-in voltage, and resistances at different operating points. The results and conclusions are to be analyzed and documented.

Uploaded by

rahul.23eez0004
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
25 views3 pages

Indian Institute of Technology Ropar Electrical Engineering Department

This document provides instructions for a lab exercise to study the voltage-current (V-I) characteristics of a PN junction diode. The objectives are to draw and analyze the V-I curve of the diode and calculate its static and dynamic resistance. Students will connect a diode, resistor, power supply and measurement equipment in forward and reverse bias configurations. They will record voltage and current readings to plot the V-I curves and determine values like threshold voltage, cut-in voltage, and resistances at different operating points. The results and conclusions are to be analyzed and documented.

Uploaded by

rahul.23eez0004
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

Indian Institute of Technology Ropar

Electrical Engineering Department

Basic Electronics Lab (GE 108)


Lab exercise # 1

Title: To study the V-I characteristics of PN junction diode.

Objective: The objectives of this lab exercise are to draw and analyze V-I characteristics of
PN junction diode and calculate its static and dynamic resistance.

Components and equipment’s: PN junction diodes (1N 4007), resistance (1 K), power
supply, breadboard etc.

Introduction: A diode is a nonlinear circuit element. The symbol of a diode and a real
Commercial diode is shown in Fig. 1. Generally there is a band marked at its cathode for its
identification.

ANODE CATHODE

Fig. 1

At a given operating point, the static and dynamic resistance of a diode can be determined
from its characteristics as shown in Fig. 2. The static or dc resistance, RD, of the diode at the
operating points (the point where the load line intersects the diode characteristics), Q, is
simply the quotient of the corresponding levels of VD and ID.The dc resistance levels at the
knee and below will be greater than the resistance levels obtained for the vertical rise section
of the characteristics.
RD = VD/ID

Fig.2

The diode circuits generally operate with varying inputs, which will move the instantaneous
operating point up and down a region of the characteristics and defines a specific change in
current and voltage. Dynamic or ac Resistance, rd, is defined as the quotient of this change in
voltage and change in current around the dc operating point

Circuit diagram:

Fig.3

Procedure:
Before you proceed, identify the p and n-side of the diode in order to connect properly in
forward and reverse bias mode.

Forward Bias characteristics:

1. Assemble the circuit on your breadboard as shown in Fig 1(a). Connect to the 0-3V dc
power supply.

2. Switch on the power supply. Slowly increase the supply voltage in steps of 0.1 Volt using
the fine adjustment knob and note down the corresponding readings of diode current. When
you find the change in current is larger (which means you have already crossed the threshold
point!), increase the supply voltage in steps of 0.1 or smaller to note down current.

3. Using DSO in appropriate modes, measure voltage drop across the diode. Using multi-
meter, measure the current in the circuit. Switch off the supply after taking sufficient
readings.

4. Plot the I~V characteristics and estimate the threshold voltage.

5. Choose two operating points below and above (i.e. 5 mV) the threshold point and
determine the static and dynamic resistance at each of the points.
Reverse Bias characteristics:

1. Assemble the circuit on your breadboard as shown in Fig 1(b). Connect to the 0-5V dc
power supply.

2. Switch on the supply. Increase the supply voltage in steps of 0.5 Volt to note down the
diode current.

3. Use DSO and milti-meter for voltage and current measurements, respectively. Keep in
mind that magnitude of current flowing in the circuit will be very small, so choose current
range properly. Switch off the supply after taking sufficient readings.

4. Plot the I~V characteristics on the same graph sheet and estimate the reverse saturation
current.

Results:

At the end of this lab exercise, one should be able to analyze graph (on graph paper),
terminals of diode and difference between dynamic & static resistances.

1. Cut in Voltage = ……..


2. VDC and IDC for Q point = ……….. and ………
3. Static resistance = ……..
4. Dynamic resistance = …….

Conclusions: To be written by students in record.

Post-lab questions:

i) Describe the behavior of the VI curve for diode using detailed device operation.
ii) Threshold voltage for normal diode is ______V (What type of a diode it is, Si/Ge?)
iii) Draw a Zener diode characteristics.

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy