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1.PN Diode

The document outlines an experiment to plot the VI characteristics of a PN junction diode, detailing the apparatus required and the theory behind forward and reverse biasing. It includes procedures for measuring forward and reverse bias currents and voltages, as well as calculations for static and dynamic resistances. The results section emphasizes the determination of the static and dynamic resistances of the diode.

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sivasubramanian.r25
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1 views7 pages

1.PN Diode

The document outlines an experiment to plot the VI characteristics of a PN junction diode, detailing the apparatus required and the theory behind forward and reverse biasing. It includes procedures for measuring forward and reverse bias currents and voltages, as well as calculations for static and dynamic resistances. The results section emphasizes the determination of the static and dynamic resistances of the diode.

Uploaded by

sivasubramanian.r25
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Characteristics of PN

junction diode
Circuit Diagram:

Forward Bias:

figure (a)

Reverse Bias:

figure (b)
Exp.No : 1
Characteristics of PN junction diode
Date :

Aim:
To plot VI Characteristics of PN Junction Diode and to determine static and dynamic resistances of
PN Junction diode.

Apparatus Required:
S.No Name of the Apparatus Range Quantity

1 Diode IN 4007 1

2 Resistors 1KΩ, 100Ω 1


3 Regulated Power Supply (0-30)V DC 1
4 Digital Ammeter (0-200)μA/(0-200)mA 1

5 Digital Voltmeter (0-20)V DC 1

6 Bread Board - 1

7 Connecting Wires - As required

Theory:

The diode is a device formed from a junction of n-type and p-type semiconductor material. The
lead connected to the p-type material is called the anode and the lead connected to the n-type material
is the cathode. In general, the cathode of a diode is marked by a solid line on the diode.
In forward biasing, the positive terminal of battery is connected to the P side and the negative
terminal of battery is connected to the N side of the diode. Diode will conduct in forward biasing
because the forward biasing will decrease the depletion region width and overcome the barrier
potential. In order to conduct, the forward biasing voltage should be greater than the barrier potential.
During forward biasing the diode acts like a closed switch with a potential drop of nearly 0.6 V across
it for a silicon diode. The diode starts conducting when the forward bias voltage exceeds cut-in
voltage. (0.6 volts for Si diode; 0.3 for Ge diode).
In reverse biasing, the positive terminal of battery is connected to the N side and the negative
terminal of battery is connected to the P side of a diode. The junction resistance becomes very high
and a very small current (reverse saturation current) flows in the circuit. The diode is said to be in
OFF state. The reverse bias current is due to minority charge carriers.
Tabulation:
Forward Bias:
Applied Voltage Forward Voltage Forward Current
S.No.
Vdc (V) Vf (V) If (mA)

Reverse Bias:
Applied Voltage Reverse Voltage Reverse Current
S.No
Vdc (V) VR (V) IR(µA)
In the forward-biased and reversed-biased regions, the current (If), and the voltage (Vf), of a
semiconductor diode are related by the diode equation:
Vf
If = Is (e η VT − 1)

Is is reverse saturation current or leakage current,


If is current through the diode(forward current),
Vf is potential difference across the diode terminals(forward voltage)
KT
VT is thermal voltage, VT = q

k is Boltzmann’s constant = 1.38x10−23 J /Kelvin,


q is the electronic charge = 1.6x10−19 joules/volt(Coulombs),
T is the absolute temperature in Kelvin(K = 273 + temperature in °C),
At room temperature (25 °C), the thermal voltage is about 25.7 mV,
n is an empirical constant between 0.5 and 2
The empirical constant, n is a number that can vary according to the voltage and current levels.
It depends on electron drift, diffusion, and carrier recombination in the depletion region. Among the
quantities affecting the value of n are the diode manufacture, levels of doping and purity of materials.
KT
If n=1, the value of q
is 26 mV at 25°C.
KT
When n=2, the value of becomes 52 mV. For germanium diodes, η is usually considered to be close
q

to 1. For silicon diodes, η is in the range of 1.3 to 1.6.

Procedure
(i) Forward Bias:
1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is connected
to the cathode of the diode,
3. The power supply is switched ON and the input voltage (DC supply voltage) is increased in
Steps of 0.1V.
4. The corresponding current flowing through the diode If and voltage Vf across the diode for
each and every step of the input voltage is noted.
5. The readings of voltage and current are tabulated.
6. The graph is plotted between voltage Vf on x-axis and current If on y-axis.
Model Graph:

Calculation:
Vf
Static Forward Resistance (Rdc) =
If
ΔVf
Dynamic Forward Resistance (rac) =
ΔIf
(ii) Reverse Bias:
1. Connections are made as per the circuit diagram.
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is
connected to the anode of the diode.
3. The power supply is switched ON and the input voltage (DC supply voltage) is increased in
Steps of 0.1V.
4. The corresponding current flowing through the diode IR and voltage VR across the diode for
each and every step of the input voltage is noted.
5. The readings of voltage and current are tabulated.
6. The graph is plotted between voltage VR on x-axis and current IR on y-axis.

Result:
The forward and Reverse Bias characteristics for a PN junction diode were observed and the
static and dynamic resistances of PN Junction diode were determined.
i. The Static forward resistance of PN Junction diode is ____________________
ii. The Dynamic forward resistance of PN Junction diode is _________________

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