EMB12N03V

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:
D
BVDSS 30V
RDSON (MAX.) 11.5mΩ
ID 18.5A G

UIS, Rg 100% Tested S

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT

Gate‐Source Voltage VGS ±20 V

TC = 25 °C 18.5
Continuous Drain Current ID
TC = 100 °C 13.5 A

Pulsed Drain Current1 IDM 74

Avalanche Current IAS 12

Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS 7.2

mJ
2
Repetitive Avalanche Energy L = 0.05mH EAR 3.6

TC = 25 °C 21
Power Dissipation PD W
TC = 100 °C 8.3

TA = 25 °C 2.5
Power Dissipation PD W
TA = 100 °C 1

Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT

Junction‐to‐Case RJC 6
°C / W
Junction‐to‐Ambient3 RJA 50
1
Pulse width limited by maximum junction temperature.
2
Duty cycle  1％
3
50°C / W when mounted on a 1 in2 pad of 2 oz copper.

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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT

MIN TYP MAX

STATIC
Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.7 3
Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 A
VDS = 20V, VGS = 0V, TJ = 125 °C 25
On‐State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 18.5 A
1
Drain‐Source On‐State Resistance RDS(ON) VGS = 10V, ID = 12A 9.7 11.5
mΩ
VGS = 4.5V, ID = 7A 13 16
Forward Transconductance1 gfs VDS = 5V, ID = 12A 15 S

DYNAMIC
Input Capacitance Ciss 1050
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 141 pF

Reverse Transfer Capacitance Crss 87

Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 1.2 Ω
1,2
Total Gate Charge Qg(VGS=10V) 17.6
Qg(VGS=4.5V) VDS = 15V, VGS = 10V, 9.0 nC
ID = 12A
Gate‐Source Charge1,2 Qgs 2.6
Gate‐Drain Charge1,2 Qgd 4.0
1,2
Turn‐On Delay Time td(on) 8
1,2
Rise Time tr VDS = 15V, 8 nS
1,2
Turn‐Off Delay Time td(off) ID = 1A, VGS = 10V, RGS = 2.7Ω 15
Fall Time1,2 tf 10
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 2.5
A
3
Pulsed Current ISM 10
Forward Voltage1 VSD IF = IS, VGS = 0V 1.2 V
Reverse Recovery Time trr 18 nS
Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / S 40 A
Reverse Recovery Charge Qrr 10 nC

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1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB12N03V for EDFN 3 x 3

B12 B12N03: Device Name

N03
ABCDEFG ABCDEFG: Date Code

b A1

Θ1
0.10
Outline Drawing
E1
E

e c

D
D1
L1
E2
E3
L

Dimension in mm
Dimension A A1 b c D D1 E E1 E2 E3 e L L1 Ѳ1

Min. 0.70 0 0.24 0.10 2.95 2.25 3.15 2.95 1.65 0.30 0∘

Typ. 0.80 0.30 0.152 3.00 2.35 3.20 3.00 1.75 0.575 0.65 0.40 0.13 10∘

Max. 0.90 0.05 0.37 0.25 3.15 2.45 3.40 3.15 1.96 0.50 12∘

Recommended minimum pads

0.6

2.6
2.05
3.75

0.65
0.5

0.4
0.6

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TYPICAL CHARACTERISTICS

On‐Region Characteristics On‐Resistance Variation with Drain Current and Gate Voltage
50 3.0
10V
7V
6V
40 2.5
5V

Drain‐Source On‐Resistance
I D ‐ Drain Current( A )

5V

R DS(ON) ,Normalized
30 2.0
VGS = 4.5V
V = 4.5V
GS

20 1.5
6V
7V
10V
10 1.0

0 0.5
0 1 2 3 4 5 0 10 20 30 40 50
VDS ‐ Drain Source Voltage( V ) ID ,Drain Current( A )

On‐Resistance Variation with Temperature On‐Resistance Variation with Gate‐Source Voltage

1.8 0.030
ID = 12A
VGS = 10V ID = 6A
Drain‐Source On‐Resistance

1.6
R DS(ON) ,Normalized

0.025
R DS(ON) ,On‐Resistance( ohm )

1.4
0.020
1.2

0.015
1.0
TA = 125°C

0.8 0.010
TA = 25°C

0.6 0
‐50 ‐25 0 25 50 75 100 125 150 2 4 6 8 10
Tj ,Junction Temperature(°C ) VGS ,Gate‐Source Voltage( V )

Body Diode Forward Voltage Variation

Transfer Characteristics with Source Current and Temperature
50 60
VGS = 0V
VDS = 10V
T A = ‐55 °C 25 °C TA = 125°C
10
40
I S ,Reverse Drain Current( A )
ID ,Drain Current( A )

1
125 °C
30
25°C
0.1

20 ‐55°C
0.01

10
0.001

0 0.0001
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS ,Gate‐Source Voltage( V ) VSD ,Body Diode Forward Voltage( V )

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 EMB12N03V

C a p a c it a n c e C h a r a c t e r is t ic s
G a te C h a r g e C h a r a c te r is tic s 10 4
12
ID = 1 2 A

10

C is s
VGS ,Gate-Source Voltage( V )

3
10

C‐Capacitance( pF )
8
V D S =5V
10V

15V
6

C o ss

4 10 2 C rss

2
f = 1 M Hz
V G S= 0 V
0
0 6 12 18 0 5 10 15 20 25 30
Q g ,G a te C h a rg e ( n C ) V DS ‐ D r a in ‐ S o u r c e V o lt a g e ( V )

Maximum Safe Operating Area Single Pulse Maximum Power Dissipation

100 50
it Single Pulse
) Lim 100μs RθJA = 50°C/W
ON
R DS( TA = 25°C
1ms 40
P( pk ),Peak Transient Power( W )

10
10ms
ID ‐ Drain Current( A )

100ms 30
1 1s

10s 20
VGS = 10V DC
0.1 Single Pulse
R JA= 50°C/W 10
T A = 25°C

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS ‐ Drain‐Source Voltage( V )

Transient Thermal Response Curve

1
Duty Cycle = 0.5
Transient Thermal Resistance

0.2
r( t ),Normalized Effective

0.1
0.1
0.05
Notes:
0.02
P DM
0.01
t1
0.01 1.Duty Cycle,D =
t2
t1

t2
Single Pulse
2.RθJA =50°C/W

3.TJ ‐ TA = P * RθJA (t)

4.R JA (t)=r(t) + RθJA

θ

0.001
‐4 ‐3 ‐2 ‐1
10 10 10 10 1 10 100 1000
t1 ,Time (sec)

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