Adp 150
Adp 150
ADP150
Ultralow Noise, 150 mA, CMOS Linear Regulator
Rev. E
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Data Sheet ADP150
TABLE OF CONTENTS
REVISION HISTORY
11/2022—Rev. D to Rev. E
Changes to Applications Section..................................................................................................................... 1
Changes to Undervoltage Lockout Parameter, Table 1................................................................................... 3
Changes to Figure 12 and Figure 14............................................................................................................... 8
Changes to Figure 49.................................................................................................................................... 18
Changes to Ordering Guide........................................................................................................................... 18
Changes to Evaluation Board ....................................................................................................................... 19
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VIN = (VOUT + 0.4 V) or 2.2 V, whichever is greater; EN = VIN, IOUT = 10 mA, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT VOLTAGE RANGE VIN TJ = −40°C to +125°C 2.2 5.5 V
OPERATING SUPPLY CURRENT IGND IOUT = 0 µA 10 µA
IOUT = 0 µA, TJ = −40°C to +125°C 22 µA
IOUT = 100 µA 20 µA
IOUT = 100 µA, TJ = −40°C to +125°C 40 µA
IOUT = 10 mA 60 µA
IOUT = 10 mA, TJ = −40°C to +125°C 100 µA
IOUT = 150 mA 220 µA
IOUT = 150 mA, TJ = −40°C to +125°C 320 µA
SHUTDOWN CURRENT IGND-SD EN = GND 0.2 µA
EN = GND, TJ = −40°C to +125°C 1.0 µA
OUTPUT VOLTAGE ACCURACY
5-Lead TSOT VOUT IOUT = 10 mA −1 +1 %
100 µA < IOUT < 150 mA, VIN = (VOUT + 0.4 V) to 5.5 V, TJ = −2.5 +1.5 %
−40°C to +125°C
4-Ball WLCSP VOUT IOUT = 10 mA −1 +1 %
100 µA < IOUT < 150 mA, VIN = (VOUT + 0.4 V) to 5.5 V, TJ = −2.0 +1.5 %
−40°C to +125°C
REGULATION
Line Regulation ∆VOUT/∆VIN VIN = (VOUT + 0.4 V) to 5.5 V, TJ = −40°C to +125°C −0.05 +0.05 %/V
Load Regulation1
5-Lead TSOT ∆VOUT/∆IOUT IOUT = 100 µA to 150 mA 0.003 %/mA
IOUT = 100 µA to 150 mA, TJ = −40°C to +125°C 0.0075 %/mA
4-Ball WLCSP ∆VOUT/∆IOUT IOUT = 100 µA to 150 mA 0.002 %/mA
IOUT = 100 µA to 150 mA, TJ = −40°C to +125°C 0.006 %/mA
DROPOUT VOLTAGE2 VDROPOUT IOUT = 10 mA 10 mV
IOUT = 10 mA, TJ = −40°C to +125°C 35 mV
IOUT = 150 mA 105 mV
IOUT = 150 mA, TJ = −40°C to +125°C 160 mV
START-UP TIME3 TSTART-UP VOUT = 3.3 V 150 µs
CURRENT-LIMIT THRESHOLD4 ILIMIT 190 260 400 mA
W grade, TJ = −40°C to +125°C 155 260 400 mA
UNDERVOLTAGE LOCKOUT TJ = −40°C to +125°C
Input Voltage Rising UVLORISE 1.96 V
W grade 1.86 V
Input Voltage Falling UVLOFALL 1.28 V
Hysteresis UVLOHYS 115 mV
THERMAL SHUTDOWN
Thermal Shutdown Threshold TSSD TJ rising 150 °C
Thermal Shutdown Hysteresis TSSD-HYS 15 °C
EN INPUT
EN Input Logic High VIH 2.2 V ≤ VIN ≤ 5.5 V 1.2 V
EN Input Logic Low VIL 2.2 V ≤ VIN ≤ 5.5 V 0.4 V
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Table 1. (Continued)
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
EN Input Leakage Current VI-LEAKAGE EN = IN or GND 0.001 µA
EN = IN or GND, TJ = −40°C to +125°C 1 µA
OUTPUT NOISE OUTNOISE 10 Hz to 100 kHz, VIN = 5 V, VOUT = 3.3 V 9 µV rms
10 Hz to 100 kHz, VIN = 5 V, VOUT = 2.5 V 9 µV rms
10 Hz to 100 kHz, VIN = 5 V, VOUT = 1.8 V 9 µV rms
POWER SUPPLY REJECTION RATIO PSRR 10 kHz, VIN = 3.8 V, VOUT = 3.3 V, IOUT = 10 mA 70 dB
(VIN = VOUT + 0.5 V)
10 kHz, VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA 70 dB
100 kHz, VIN = 3.8 V, VOUT = 3.3 V, IOUT = 10 mA 55 dB
100 kHz, VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA 55 dB
POWER SUPPLY REJECTION RATIO 10 kHz, VIN = 4.3 V, VOUT = 3.3 V, IOUT = 10 mA 70 dB
(VIN = VOUT + 1 V)
100 kHz, VIN = 4.3 V, VOUT = 3.3 V, IOUT = 10 mA 55 dB
1 Based on an end-point calculation using 1 mA and 150 mA loads. See Figure 6 for typical load regulation performance for loads less than 1 mA.
2 Dropout voltage is defined as the input-to-output voltage differential when the input voltage is set to the nominal output voltage. This applies only for output voltages above
2.2 V.
3 Start-up time is defined as the time between the rising edges of EN to VOUT being at 90% of its nominal value.
4 Current limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V output
voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V or 2.7 V.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT AND OUTPUT CAPACITOR
Minimum Input and Output Capacitance1 CMIN TA = −40°C to +125°C 0.7 µF
Capacitor ESR RESR TA = −40°C to +125°C 0.001 0.2 Ω
1 The minimum input and output capacitance should be greater than 0.7 µF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R-type and X5R-type capacitors are recommended,
and Y5V and Z5U capacitors are not recommended for use with any LDO.
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Absolute maximum ratings apply individually only, not in combina- TJ = TB + (PD × ΨJB)
tion. The ADP150 can be damaged when the junction temperature Refer to JESD51-8 and JESD51-12 for more detailed information
limits are exceeded. Monitoring ambient temperature does not about ΨJB.
guarantee that TJ is within the specified temperature limits. In appli-
cations with high power dissipation and poor thermal resistance, the THERMAL RESISTANCE
maximum ambient temperature may have to be derated. θJA and ΨJB are specified for the worst-case conditions, that is, a
In applications with moderate power dissipation and low printed device soldered in a circuit board for surface-mount packages.
circuit board (PCB) thermal resistance, the maximum ambient tem- Table 4. Thermal Resistance
perature can exceed the maximum limit as long as the junction Package Type θJA ΨJB Unit
temperature is within specification limits. The junction temperature
(TJ) of the device is dependent on the ambient temperature (TA), 5-Lead TSOT 170 43 °C/W
the power dissipation of the device (PD), and the junction-to-ambi- 4-Ball, 0.4 mm Pitch WLCSP 260 58 °C/W
ent thermal resistance of the package (θJA).
ESD CAUTION
Maximum junction temperature (TJ) is calculated from the ambient
ESD (electrostatic discharge) sensitive device. Charged devi-
temperature (TA) and power dissipation (PD) by
ces and circuit boards can discharge without detection. Although
TJ = TA + (PD × θJA) this product features patented or proprietary protection circuitry,
damage may occur on devices subjected to high energy ESD.
The junction to ambient thermal resistance (θJA) of the package is Therefore, proper ESD precautions should be taken to avoid
based on modeling and a calculation using a 4-layer board. The performance degradation or loss of functionality.
junction to ambient thermal resistance is highly dependent on the
application and board layout. In applications where high maximum
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VIN = 3.7 V, VOUT = 3.3 V, IOUT = 1 mA, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
Figure 5. Output Voltage (VOUT) vs. Junction Temperature Figure 8. Ground Current vs. Junction Temperature
Figure 6. Output Voltage (VOUT) vs. Load Current (IOUT) Figure 9. Ground Current vs. Load Current (IOUT)
Figure 7. Output Voltage (VOUT) vs. Input Voltage (VIN) Figure 10. Ground Current vs. Input Voltage (VIN)
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Figure 11. Shutdown Current vs. Temperature at Various Input Voltages Figure 14. Ground Current vs. Input Voltage (VIN) in Dropout
Figure 12. Dropout Voltage vs. Load Current (ILOAD) Figure 15. Power Supply Rejection Ratio (PSRR) vs. Frequency, VOUT = 1.8 V,
VIN = 2.3 V
Figure 13. Output Voltage (VOUT) vs. Input Voltage (VIN) in Dropout
Figure 16. Power Supply Rejection Ratio (PSRR) vs. Frequency, VOUT = 2.8 V,
VIN = 3.3 V
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Figure 17. Power Supply Rejection Ratio (PSRR) vs. Frequency, VOUT = 3.3 V, Figure 20. Output RMS Noise vs. Load Current (IOUT) and Output Voltage
VIN = 3.8 V (VOUT), VIN = 5 V, COUT = 1 µF
Figure 18. Power Supply Rejection Ratio (PSRR) vs. Frequency Various Figure 21. Output Noise Spectrum, VIN = 5 V, ILOAD = 10 mA, COUT = 1 μF
Output Voltages and Load Currents
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Figure 23. Load Transient Response, COUT = 4.7 μF Figure 25. Line Transient Response, CIN, COUT = 1 μF, ILOAD = 150 mA
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The ADP150 is an ultralow noise, low quiescent current, low Internally, the ADP150 consists of a reference, an error amplifier,
dropout linear regulator that operates from 2.2 V to 5.5 V and a feedback voltage divider, and a PMOS pass transistor. Output
can provide up to 150 mA of output current. Drawing a low 220 current is delivered via the PMOS pass device that is controlled
µA of quiescent current (typical) at full load makes the ADP150 by the error amplifier. The error amplifier compares the reference
ideal for battery-operated portable equipment. Shutdown current voltage with the feedback voltage from the output and amplifies
consumption is typically 200 nA. the difference. If the feedback voltage is lower than the reference
voltage, the gate of the PMOS device is pulled lower, allowing
Using a proprietary architecture, the ADP150 provides superior more current to pass and increasing the output voltage. If the
noise performance for noise sensitive analog and RF applications feedback voltage is higher than the reference voltage, the gate of
without the need for a noise bypass capacitor. The ADP150 is also the PMOS device is pulled higher, allowing less current to pass and
optimized for use with small 1 µF ceramic capacitors. decreasing the output voltage.
The ADP150 is available in 14 output voltage options, ranging from
1.8 V to 3.3 V. The ADP150 uses the EN pin to enable and disable
the VOUT pin under normal operating conditions. When EN is high,
VOUT turns on, and when EN is low, VOUT turns off. For automatic
startup, EN can be tied to VIN.
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Consider the case where a hard short from VOUT to GND occurs. Table 7. Typical θJA Values (Continued)
At first, the ADP150 limits current so that only 260 mA is conducted θJA (°C/W)
into the short. If self-heating of the junction is great enough to Copper Size (mm2) TSOT WLCSP
cause its temperature to rise above 150°C, thermal shutdown
activates, turning off the output and reducing the output current to 500 131 151
zero. As the junction temperature cools and drops below 135°C, 1 Device soldered to minimum size pin traces.
the output turns on and conducts 260 mA into the short, again
causing the junction temperature to rise above 150°C. This thermal Table 8. Typical ΨJB Values
oscillation between 135°C and 150°C causes a current oscillation ΨJB (°C/W)
between 260 mA and 0 mA that continues as long as the short TSOT WLCSP
remains at the output. 42.8 58.4
Current and thermal limit protections are intended to protect the de-
vice against accidental overload conditions. For reliable operation, Use Equation 2 to calculate the junction temperature.
device power dissipation must be externally limited so that the TJ = TA + (PD × θJA) (2)
junction temperatures do not exceed 125°C.
where:
THERMAL CONSIDERATIONS TA is the ambient temperature.
PD is the power dissipation in the die, given by
In most applications, the ADP150 does not dissipate much heat
due to its high efficiency. However, in applications with high ambient PD = ((VIN − VOUT) × ILOAD) + (VIN × IGND)
temperature and high supply voltage to output voltage differential,
the heat dissipated in the package is large enough that it can cause where:
the junction temperature of the die to exceed the maximum junction ILOAD is the load current.
temperature of 125°C. IGND is the ground current.
VIN and VOUT are input and output voltages, respectively.
When the junction temperature exceeds 150°C, the converter en-
ters thermal shutdown. It recovers only after the junction tempera- Power dissipation due to ground current is quite small and can be
ture decreases below 135°C to prevent any permanent damage. ignored. Therefore, the junction temperature equation simplifies to
Therefore, thermal analysis for the chosen application is very TJ = TA + (((VIN − VOUT) × ILOAD) × θJA) (3)
important to guarantee reliable performance over all conditions.
The junction temperature of the die is the sum of the ambient As shown in the previous equation, for a given ambient temper-
temperature of the environment and the temperature rise of the ature, input-to-output voltage differential, and continuous load cur-
package due to the power dissipation, as shown in Equation 2. rent, there exists a minimum copper size requirement for the PCB
to ensure that the junction temperature does not rise above 125°C.
To guarantee reliable operation, the junction temperature of the Figure 33 to Figure 46 show the junction temperature calculations
ADP150 must not exceed 125°C. To ensure that the junction for the different ambient temperatures, load currents, VIN-to-VOUT
temperature stays below 125°C, be aware of the parameters that differentials, and areas of PCB copper.
contribute to the junction temperature changes. These parameters
include ambient temperature, power dissipation in the power de-
vice, and thermal resistances between the junction and ambient
air (θJA). The θJA number is dependent on the package assembly
compounds that are used and the amount of copper used to solder
the package GND pins to the PCB. Table 7 shows typical θJA
values of the 5-lead TSOT and 4-ball WLCSP packages for various
PCB copper sizes. Table 8 shows the typical ΨJB value of the
5-lead TSOT and 4-ball WLCSP.
Table 7. Typical θJA Values
θJA (°C/W)
Copper Size (mm2) TSOT WLCSP
01 170 260
50 152 159
Figure 33. TSOT, 500 mm2 of PCB Copper, TA = 25°C
100 146 157
300 134 153
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Figure 34. TSOT, 100 mm2 of PCB Copper, TA = 25°C Figure 37. TSOT, 100 mm2 of PCB Copper, TA = 50°C
Figure 35. TSOT, 0 mm2 of PCB Copper, TA = 25°C Figure 38. TSOT, 0 mm2 of PCB Copper, TA = 50°C
Figure 36. TSOT, 500 mm2 of PCB Copper, TA = 50°C Figure 39. TSOT, 100 mm2 of PCB Copper, Board Temperature = 85°C
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Figure 40. WLCSP, 500 mm2 of PCB Copper, TA = 25°C Figure 43. WLCSP, 500 mm2 of PCB Copper, TA = 50°C
Figure 41. WLCSP, 100 mm2 of PCB Copper, TA = 25°C Figure 44. WLCSP, 100 mm2 of PCB Copper, TA = 50°C
Figure 42. WLCSP, 0 mm2 of PCB Copper, TA = 25°C Figure 45. WLCSP, 0 mm2 of PCB Copper, TA = 50°C
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Figure 46. WLCSP, 100 mm2 of PCB Copper, Board Temperature = 85°C Figure 48. Example WLCSP PCB Layout
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EVALUATION BOARDS
Table 11. Evaluation Boards
Model1 Description
ADP150CB-3.3-EVALZ Evaluation Board with WLCSP Package
ADP150UJZ-REDYKIT Evaluation Board
SCP-ADP150-EVALZ Signal Chain Power (SCP) Evaluation Board
1 Z = RoHS Compliant Part.
AUTOMOTIVE PRODUCTS
The ADP150W models are available with controlled manufacturing to support the quality and reliability requirements of automotive applications.
Note that these automotive models may have specifications that differ from the commercial models; therefore, designers should review the
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Specifications section of this data sheet carefully. Only the automotive grade products shown are available for use in automotive applications.
Contact your local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive
Reliability reports for these models.
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