VCC

DC supply → • O/p coupling

“0” potential R1 RC capacitor → s/c
• Large values
•I/p coupling
C1
C2 +
• Block DC and
capacitor → s/c RS
pass AC signal
+ Vo
• Large values Vi R2 RE C3

• Block DC and VS -
-
pass AC signal • Bypass
capacitor → s/c
Voltage-divider configuration
under AC analysis
•Large values

R1 RC

Redraw the voltage-divider

+ configuration after removing dc
RS + Vo supply and insert s/c for the
Vi R2
capacitors
VS -
-

2
 Modeling of
BJT begins
HERE!

Ii Transistor small- Io
B signal ac C
R1 RC + equivalent cct
Zi +
E
RS Rc
+ Vi R1 R2
Zo Vo
RS + Vo
Vi R2
VS
- - -
VS
-

Redrawn for small-signal AC analysis

3
 AC bias analysis :

1) Kill all DC sources

2) Coupling and Bypass capacitors are replaced by

short circuit. The effect of these capacitors is to set a
lower cut-off frequency for the circuit.

3) Inspect the circuit (replace BJTs with its small

signal model: re or hybrid).

4) Solve for voltage and current transfer function, i/o

and o/p impedances.

4
 re TRANSISTOR MODEL

• employs a diode and controlled current source to

duplicate the behavior of a transistor.
• BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

→Common-base BJT transistor

→re model
→re equivalent ckt.

5
 26mV
re =  IE is the DC level of
IE(dc)
emitter current

Therefore, the input impedance, Zi = re

Ie Ic That is less than 50Ω.

e c
For the output impedance, it will be as
Ic = α Ie
follows;
b b Ie=0A Ic
re model for the pnp common-base e c
configuration

Vs=0V re Ic = 0A
b b
Ie Ic
e c
isolation Determining Zo for common-base
re Ic = α Ie part,
b b Zi=re Zo   6
common-base re equivalent cct
The common-base
characteristics

7
 Ie BJT common-base
e transistor amplifier c Ic = α Ie Io
+
+
Vi re Zo =  RL
Zi Vo
-
- b b

Defining Av=Vo/Vi for the common-base configuration

Vo = −IoRL = −(− Ic )RL = IeRL

Vi = IeZi = Iere
Voltage gain,
Vo IeRL  RL
Av = = Av = 
RL
Vi Iere re re
8
 Ie BJT common-base
e transistor amplifier c Ic = α Ie Io
+
+
Vi re Zo =  RL
Zi Vo
-
- b b

Defining Ai=Io/Ii for the common-base configuration

Io −Ic Ie
Ai = = =−
Ii Ie Ie
Current gain,
Ai = −  −1
9
Example: For a common-base configuration in figure
below with IE=4mA, =0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Zi b) Calculate Av if RL=0.56k
c) Find Zo and Ai

Ie Ic
e c

re Ic = α Ie
b b

common-base re equivalent cct

10
Solution:
26m 26m
a) Zi = re = = = 6.5
IE 4m

RL 0.98(0.56k )
b) Av = = = 84.43
re 6.5

c) Zo  Ω
Io
Ai = = − = − 0.98
Ii

11
Ii = I Ic
e
e c

re Ic = α Ie
b b

common-base re equivalent cct

12
Example: For a common-base configuration in previous
example with Ie=0.5mA, =0.98 and AC signal of 10mV is
applied, determine:
a) Zi b) Vo if RL=1.2k c) Av d)Ai e) Ib

Solution :
d) Ai = − = −0.98
Vi 10m
a) Zi = = = 20 e) Ib = Ie - Ic
Ie 0.5m
b) Vo = IcRL = IeRL = Ie - Ie
= 0.98(0.5m)(1.2k) = 0.5m(1 − )
= 588mV = 0.5m(1 − 0.98)
= 10A
Vo 588m
c) Av = = = 58.8
Vi 10m

13
 Common-Emitter Configuration

→Common-emitter BJT transistor

→re model
→re equivalent cct.
→Still remain controlled-current source (conducted
between collector and base terminal)
→Diode conducted between base and emitter terminal

Input Output
Base & Emitter terminal Collector & Emitter terminal

14
 c
C
Ic
Ic
Ic =  Ib
Ib
b
Ib
B

E E
e e
common-emitter BJT transistor
re model npn common-emitter configuration
Vi
Zi = (1)
Ii
c
Vi = Vbe = Iere  Ibre and
Ic
subtitute into (1) gives Ic =  Ib
Ii=Ib
b
Vbe Ibre
Zi =  + + Ie
Ib Ib Vi Vbe re

Zi = re -
e - e

Determining Zi using re equivalent model

Z ranges betweenhundred to 6 ~ 7k
i 15
The output graph

16
 Output impedance Zo
Ii=Ib
b c

 Ib
re ro

e e
re model for the C-E transistor configuration

Ii=Ib = 0A
b c

Vs=0V Ib = 0A
re ro Zo
e e

Zo = ro
if ro is ignored thus the
Zo = Ω (open cct, high impedance)
17
 Ii=Ib BJT common-emitter Io = Ic =  Ib
transistor amplifier Io
e c
+
+
Vi re Zo =  RL
Zi = re Vo
-
- b b

Determining voltage and current gain for the

common-emitter amplifier

Vo = −IoRL = −(Ic )RL = −IbRL Current gain,

Vi = IiZi = Ibre Io Ic Ib
Ai = = =
Ii Ib Ib
Voltage gain,
Vo IbRL
Ai = 
Av = =−
Vi Ibre

RL
Av = −
re 18
Example: Given =120 and IE(dc)=3.2mA for a common-
emitter configuration with ro=  , determine:

a) Zi b)Av if a load of 2 k is applied c) Ai with the 2 k load

Solution :
26m 26m
a) re = = = 8.125
IE 3.2m
Zi = re = 120(8.125) = 975

RL 2k
b)Av = − =− = − 246.15
re 8.125

Io
c) Ai = =  = 120
Ii

19
Example: Using the npn common-emitter configuration,
determine the following if =80, IE(dc)=2 mA and ro=40 k

a) Zi b) Ai if RL =1.2k  c) Av if RL=1.2k 
Ii=Ib
b c Solution :
Io
26m 26m
 Ib a) re = = = 13
re ro RL IE 2m
Zi =  re = 80(13) = 1.04k
e
re model for the C-E transistor configuration

20
Solution (cont)
Io IL
b)Ai = =
Ii Ib
ro(Ib)
IL =
ro + RL
ro(Ib)
ro + RL ro 40k
Ai = =  = (80)
Ib ro + RL 40k + 1.2k
= 77.67

RL ro 1.2k 40k
c)Av = − =− = − 89.6
re 13

21
Hybrid Equivalent Model

• re model is sensitive to the dc level of operation

that result input resistance vary with the dc
operating point
• Hybrid model parameter are defined at an
operating point that may or may not reflect the
actual operating point of the amplifier

22
 Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.

23
Determination of parameter

Vi = h11I i + h12 Vo
Vi
h11 =
Ii Vo = 0V

Vi
h12 =
Vo Ii = 0V

I O = h 21Ii + h 22 Vo
Solving Vo = 0V ,
Io
h 21 =
Ii Vo = 0V

Io
h 22 =
Vo Ii = 0A
24
H22 is a conductance!
 General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
25
Common emitter hybrid
equivalent circuit

26
Common base hybrid equivalent
circuit

27
 Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified

28
 Common-Emitter re vs. h-Parameter Model

hie = re
hfe = 
hoe = 1/ro
29
Common-Emitter h-Parameters

hie = re [Formula 7.28]

h fe =  ac [Formula 7.29]

30
 Common-Base re vs. h-Parameter Model

hib = re
hfb = -
31
Common-Base h-Parameters

hib = re [Formula 7.30]

h fb = −  −1 [Formula 7.31]

32
Common Emitter Fixed-Bias
Configuration

33
Common-Emitter Voltage-Divider
Configuration

34
CE Emitter-Bias Configuration
(unbypassed)

35
CE Emitter-Bias Configuration
(bypassed)
Example:
Determine re, Zi, Zo, Av and Ai for both
bypassed and unbypassed
configuration.

36
SW

Given IE(dc) =1.2mA, =120, and ro=40k, sketch the

following:

a. Common-emitter hybrid equivalent model

b. Common-emitter re equivalent model
c. Common-base hybrid equivalent model
d. Common-base re equivalent model

37