TGF3020-SM

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Product Overview
The Qorvo TGF3020-SM is a 5W (P3dB), 50Ω-input matched
discrete GaN on SiC HEMT which operates from 4.0 to
6.0GHz. The integrated input matching network enables
wideband gain and power performance, while the output can
be matched on board to optimize power and efficiency for
any region within the band.

The device is housed in an industry-standard 3 x 3 mm

surface mount QFN package. 3 x 3mm QFN package

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Key Features
• Frequency: 4 to 6 GHz
• Output Power (P3dB)1: 6.8 W
Functional Block Diagram • Linear Gain1: 13 dB
• Typical PAE3dB1: 60%
16 15 14 13
• Operating Voltage: 32 V
1 12
• CW and Pulse capable
Note 1: @ 5 GHz Load Pull

2 11
Input
Matching
NW
3 10 Applications
• Telemetry
4 9
• C-band radar
5 6 7 8 • Communications
• Test instrumentation
• Wideband amplifiers
• 5.8GHz ISM

Ordering Information
Part No. Description
TGF3020-SM QFN Packaged Part
TGF3020-SMEVB01 5.3 – 5.9 GHz EVB
TGF3020-SMEVB02 4 – 6 GHz EVB

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
1 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Absolute Maximum Ratings1 Recommended Operating Conditions1

Parameter Rating Units Parameter Min Typ Max Units
Breakdown Voltage,BVDG +100 V Operating Temp. Range −40 +25 +85 °C
Gate Voltage Range, VG −7 to +2 V Drain Voltage Range, VD +12 +32 +40 V
Drain Current, IDMAX 0.6 A Drain Bias Current, IDQ 25 mA
Power Dissipation, PDISS2 10.4 W Drain Current, ID4 – 0.25 – A
RF Input Power, CW, T = Gate Voltage, VG3 – −2.8 – V
+30 dBm Power Dissipation (PD)2,4 – – 7.6 W
25 °C
Storage Temperature −65 to +150 °C Power Dissipation (PD), CW2 – – 6.2 W
Notes: Notes:
1. Operation of this device outside the parameter ranges 1. Electrical performance is measured under conditions noted
given above may cause permanent damage. in the electrical specifications table. Specifications are not
2. Pulsed 100uS PW, 20% DC guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. To be adjusted to desired IDQ
4. Pulsed, 100uS PW, 20% DC

Measured Load Pull Performance – Power Tuned1, 2

Parameter Typical Values Units
Frequency, F 4 4.4 5 5.5 GHz
Drain Voltage, VD 32 32 32 32 V
Drain Bias Current, IDQ 25 25 25 25 mA
Output Power at 3dB
38.4 38.3 38.3 38.2 dBm
compression, P3dB
Power Added Efficiency at 3dB
50.1 50.4 49.5 53.0 %
compression, PAE3dB
Gain at 3dB compression, G3dB 9.6 9.7 9.7 10.3 dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
2. Load-pull characteristic Impedance, Zo = 50 Ω.

Measured Load Pull Performance – Efficiency Tuned1, 2

Parameter Typical Values Units
Frequency, F 2.7 2.9 3.1 3.3 GHz
Drain Voltage, VD 32 32 32 32 V
Drain Bias Current, IDQ 25 25 25 25 mA
Output Power at 3dB
37.6 36.8 37.1 36.8 dBm
compression, P3dB
Power Added Efficiency at 3dB
60.1 61.5 59.6 59 %
compression, PAE3dB
Gain at 3dB compression, G3dB 10.3 10.3 10.1 10.7 dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
2. Load-pull characteristic Impedance, Zo = 50 Ω.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
2 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

RF Characterization 5.3 – 5.9 GHz EVB – 5.4 GHz Performance11

Parameter Min Typ Max Units
Linear
Linear Gain,
Gain, GGLIN
LIN –
– 11.7
11.7 –
– dB
dB
Output
Output Power at 3dB
Power at 3dB compression
compression point,
point, P3dB
P3dB –
– 5.7
5.7 –
– W
W
Drain
Drain Efficiency at 3dB compression point,
Efficiency at 3dB compression point, –
– 53.1
53.1 –
– %
%
DEFF3dB
DEFF3dB
Gain
Gain at
at 3dB
3dB compression
compression point,
point, G3dB
G3dB –
– 8.7
8.7 –
– dB
dB
Notes:
Notes:
1. V
VDD =
= +32
+32 V,
V, IIDQ
DQ =
= 25
250mA, Temp==+25
mA,Temp +25°C,
°C,Pulse
PulseWidth
Width==100
100uS,
uS,Duty
DutyCycle
Cycle==20%
20%

RF Characterization 4 – 6.0 GHz EVB – 4.7 GHz Performance1

Parameter Min Typ Max Units
Linear Gain, GLIN – 11.8 – dB
Output Power at 3dB compression point, P3dB – 5.6 – W
Drain Efficiency at 3dB compression point,
– 51.7 – %
DEFF3dB
Gain at 3dB compression point, G3dB – 8.8 – dB
Notes:
1. VD = +32 V, IDQ = 25 mA, Temp = +25 °C, Pulse Width = 100 uS, Duty Cycle = 20%

RF Characterization – Mismatch Ruggedness at 5.3 and 5.9 GHz

Symbol Parameter dB Compression Typical
VSWR Impedance Mismatch Ruggedness 3 10:1
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
3 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Measured Load-Pull Smith Charts1, 2

Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle

4GHz, Load-pull 4.4GHz, Load-pull

0.5
Zs(1fo) = 23.25-20.34i  • Max Power is 38.4dBm Zs(1fo) = 24-22.43i  • Max Power is 38.3dBm
Zs(2fo) = 21.61+5.89i  at Z = 24.344+16.398i  Zs(2fo) = 42.06-1.87i  at Z = 24.314+16.373i 
 = -0.2827+0.2829i  = -0.2833+0.2827i
• Max Gain is 10.3dB • Max Gain is 10.3dB
at Z = 17.146+29.144i  at Z = 15.641+24.03i 
 = -0.2532+0.5439i  = -0.3434+0.4918i
• Max PAE is 60.1% • Max PAE is 61.5%
at Z = 17.146+29.144i  at Z = 10.956+24.122i 
 = -0.2532+0.5439i  = -0.4184+0.5613i

10 60.7
58.7

9.5

9 48.7
48.7 9.81 50.7
52.7 52.7
50.7

38.4 9.31

38.2
38.1
38
8.81
37.9

37.7
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2
Power Power
1

1
Gain Gain
PAE PAE
Zo = 50 Zo = 50
3dB Compression Referenced to Peak Gain 3dB Compression Referenced to Peak Gain

5GHz, Load-pull 5.5GHz, Load-pull

Zs(1fo) = 24.62-23.64i  • Max Power is 38.3dBm Zs(1fo) = 26.09-30.79i  • Max Power is 38.2dBm
Zs(2fo) = 51.59+26.01i  at Z = 22.515+10.159i  Zs(2fo) = 53.69+46.74i  at Z = 17.137+7.844i 
 = -0.3525+0.1895i  = -0.4694+0.1717i
• Max Gain is 10.3dB • Max Gain is 10.7dB
at Z = 14.48+19.192i  at Z = 9.368+12.204i 
 = -0.4247+0.424i  = -0.6161+0.3322i
• Max PAE is 59.6% • Max PAE is 59%
at Z = 9.755+15.964i  at Z = 9.368+12.204i 
 = -0.562+0.4173i  = -0.6161+0.3322i

10.3
57.8 47.8
49.8
9.75 51.8 10.6 56.9 52.9
54.9
34.9

9.25
10.1
38.3

38.1
38.1
37.9 9.58 37.9
37.7
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

Power Power
1

Gain Gain
PAE PAE
Zo = 50 Zo = 50
3dB Compression Referenced to Peak Gain 3dB Compression Referenced to Peak Gain

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
4 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Typical Measured Performance – Load-Pull Drive-up1, 2

Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle

Gain and PAE vs. Output Power Gain and PAE vs. Output Power
4 GHz - Power Tuned 4 GHz - Efficiency Tuned
16 60 16 70
Gain Gain
15 PAE 55 15 65
PAE
14 50 14 60
13 45 13 55
12 40
Gain [dB]

12 50

Gain [dB]
Zs(1fo) = 23.25-20.34i

PAE [%]

PAE [%]
Zs(1fo) = 23.25-20.34i Zs(2fo) = 21.61+5.89i
11 Zs(2fo) = 21.61+5.89i 35 11 Zl(1fo) = 17.15+29.14i 45
Zl(1fo) = 24.34+16.4i
10 30 10 40
9 25 9 35
8 20 8 30
7 15 7 25
6 10 6 20
27 28 29 30 31 32 33 34 35 36 37 38 39 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm] Output Power [dBm]

Gain and PAE vs. Output Power

Gain and PAE vs. Output Power
4.4 GHz - Power Tuned
4.4 GHz - Efficiency Tuned
16 60 16 70
15 55 15 65
14 50 14 60
13 45 13 55
12 40
Gain [dB]

PAE [%]

12 50
Gain [dB]

Zs(1fo) = 24-22.43i

PAE [%]
Zs(1fo) = 24-22.43i
11 Zs(2fo) = 42.06-1.87i 35 Zs(2fo) = 42.06-1.87i
Zl(1fo) = 24.31+16.37i
11 45
Zl(1fo) = 10.96+24.12i
10 30 10 40
9 25 9 35
8 Gain 20
PAE 8 Gain 30
7 15 7 PAE 25
6 10 6 20
27 28 29 30 31 32 33 34 35 36 37 38 39 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm] Output Power [dBm]

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
5 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Typical Measured Performance – Load-Pull Drive-up1, 2

Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle

Gain and PAE vs. Output Power Gain and PAE vs. Output Power
5 GHz - Power Tuned 5 GHz - Efficiency Tuned
16 60 16 70
Gain Gain
15 15 PAE 65
PAE 55
14 50 14 60
13 45 13 55
12 40 12 50

Gain [dB]
Gain [dB]

PAE [%]
PAE [%]
Zs(1fo) = 24.62-23.64i Zs(1fo) = 24.62-23.64i
11 Zs(2fo) = 51.59+26.01i 35 11 Zs(2fo) = 51.59+26.01i 45
Zl(1fo) = 22.52+10.16i Zl(1fo) = 9.76+15.96i
10 30 10 40
9 25 9 35
8 20 8 30
7 15 7 25
6 10 6 20
27 28 29 30 31 32 33 34 35 36 37 38 39 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm] Output Power [dBm]

Gain and PAE vs. Output Power Gain and PAE vs. Output Power
5.5 GHz - Power Tuned 5.5 GHz - Efficiency Tuned
16 60 16 70
15 55 15 65
14 50 14 60
13 45 13 55
12 40 12 50
Gain [dB]

Gain [dB]

Zs(1fo) = 26.09-30.79i
PAE [%]

PAE [%]
Zs(1fo) = 26.09-30.79i
Zs(2fo) = 53.69+46.74i Zs(2fo) = 53.69+46.74i
11 35 11 Zl(1fo) = 9.37+12.2i 45
Zl(1fo) = 17.14+7.84i
10 30 10 40
9 25 9 35
8 Gain 30
Gain 20 8
PAE
7 PAE 15 7 25
6 10 6 20
27 28 29 30 31 32 33 34 35 36 37 38 39 27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm] Output Power [dBm]

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
6 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Power Driveup Performance Over Temperatures Of 5.3 – 5.9 GHz EVB1, 2

Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 20 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network.

P3dB Over Temperatures Drain Efficiency @ 3dB Over Temperatures

10 100
-40°C
9 -20°C 90
0°C 80
8
25°C
7 45°C 70
65°C

DrainEff3dB [%]
6 60
85°C
P3dB [W]

5 50

4 40 -40°C
30 -20°C
3 0°C
20 25°C
2 45°C
10 65°C
1
85°C
0
0
5.3 5.4 5.5 5.6 5.7 5.8 5.9
5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency [GHz] Frequency [GHz]

G3dB Over Temperatures PDISS3dB Over Temperatures

15 10
-40°C -40°C -20°C 0°C
14 -20°C 9
0°C 25°C 45°C 65°C
13 25°C 8
45°C 85°C
12
65°C 7
PDISS3dB [W]

11 85°C
G3dB [dB]

6
10
5
9
4
8
3
7
2
6
1
5
5.3 5.4 5.5 5.6 5.7 5.8 5.9 0
5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency [GHz] Frequency [GHz]

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
7 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Power Driveup Performance At 25°C Of 5.3 – 5.9 GHz EVB1, 2

Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 20 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..

P3dB and G3dB at 25°C 3dB Drain Efficiency at 25°C

10.0 15 100
9.0 14 90
8.0 13 80
7.0 12 70

DrainEff3dB [%]
G3dB [dB]
P3dB [W]

6.0 11 60
5.0 10 50
4.0 9 40
3.0 8 30
P3dB
2.0 G3dB 7 20
1.0 6 10
0.0 5 0
5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency [GHz] Frequency [GHz]

PDISS3dB Over at 25°C

10

7
PDISS3dB [W]

0
5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency [GHz]

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
8 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Power Driveup Performance At 25°C Of 4 – 6 GHz EVB1, 2

Notes:
1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..

P3dB and G3dB at 25°C 3dB Drain Efficiency at 25°C

10.0 15 100
9.0 14 90
8.0 13 80
7.0 12 70

DrainEff3dB [%]
P3dB [W]

6.0 11 60
G3dB [dB]
5.0 10 50
4.0 9 40
3.0 P3dB 8 30
2.0 G3dB 7 20
1.0 6 10
0.0 5 0
4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
Frequency [GHz] Frequency [GHz]

PDISS3dB at 25°C
10
9
8
7
PDISS3dB [W]

6
5
4
3
2
1
0
4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
Frequency [GHz]

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
9 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Thermal and Reliability Information – Pulsed1

Parameter Conditions Values Units

Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 185°C,
9.9 °C/W
Temperature at Dissipated Power (θJC) PDISS = 10.1 W, 100 uS PW, 20% DC
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 172°C,
9.9 °C/W
Temperature at Dissipated Power (θJC) PDISS = 8.8 W, 100 uS PW, 20% DC
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 158°C,
9.6 °C/W
Temperature at Dissipated Power (θJC) PDISS = 7.6 W, 100 uS PW, 20% DC
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 145°C,
9.5 °C/W
Temperature at Dissipated Power (θJC) PDISS = 6.3 W, 100 uS PW, 20% DC
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 133°C,
9.6 °C/W
Temperature at Dissipated Power (θJC) PDISS = 5.0 W, 100 uS PW, 20% DC
Notes:
1. Thermal resistance is measured to package backside.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
10 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Thermal and Reliability Information – CW1

Parameter Conditions Values Units

Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 113°C,
11.1 °C/W
Temperature at Average Power (θJC) PDISS = 2.52 W
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 129°C,
11.6 °C/W
Temperature at Average Power (θJC) PDISS = 3.78 W
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 145°C,
11.9 °C/W
Temperature at Average Power (θJC) PDISS = 5.04 W
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 161°C,
12.1 °C/W
Temperature at Average Power (θJC) PDISS = 6.30 W
Thermal Resistance, Maximum IR Surface TCASE = +85°C, TCH = 178°C,
12.3 °C/W
Temperature at Average Power (θJC) PDISS = 7.56 W
Notes:
1. Thermal resistance is measured to package backside.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
11 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Pin Configuration and Description1

Note 1: The TGF3020-SM will be marked with the “TGF3020” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the MXXX” is the production lot number.

Pin Symbol Description

2, 3 RF IN / VG Gate

10, 11 RF OUT / VD Drain

1, 4, 5, 6, 7, 8, 9, 12, 13,
NC No Connection1
14, 15, 16
Source Source / Ground / Backside of part

Note 1: Grounding pin 6 will cause performance degradation.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
12 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Mechanical Drawing1
Note 1:
Unless otherwise noted, all dimention tolerances are +/-0.127 mm.
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum
260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
13 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

5.3 – 5.9 GHz Application Circuit - Schematic

Bias-up Procedure Bias-down Procedure

1. Set VG to -3.5 V. 1. Turn off RF signal.
2. Set ID current limit to 30 mA. 2. Turn off VD
3. Apply 32 V VD. 3. Wait 2 seconds to allow drain capacitor to discharge.
4. Slowly adjust VG until ID is set to 25 mA. 4. Turn off VG
5. Set ID current limit to 0.3 A (Pulsed operation.)
6. Apply RF.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
14 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

5.3 – 5.9 GHz Application Circuit - Layout

Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.

5.3 – 5.9 GHz Application Circuit - Bill of Materials

Reference Design Value Qty Manufacturer Part Number
R1 10 Ω 1 Vishay CRCW060310R0JNTA
R2 1 kΩ 1 Vishay CRCW06031K00JNTA
C1, C5 0.2 pF 2 Kyocera AVX 600S0R2AT250XT
C2 0.3 pF 1 Passive Plus 0603N0R3AW251X
C3, C4 5.1 pF 2 Kyocera AVX 600S5R1BT250X
C6, C7, C8 3.3 pF 3 Kyocera AVX 600S3R3BT250XT
C11 220 uF 1 United Chemicon EMVY500ADA221MJA0G
C9 10 uF 1 Murata LLL31MR60J106ME01L
C10 1 uF 1 Kyocera AVX 18121C105KAT2A
L1 3.9nH 1 CoilCraft 0603CS-3N9XJRW
L2 2.2nH 1 CoilCraft 0603CS-2N2XJEW

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
15 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

4 – 6 GHz Application Circuit - Schematic

Bias-up Procedure Bias-down Procedure

2. Set VG to -4 V. 3. Turn off RF signal.
4. Set ID current limit to 30 mA. 4. Turn off VD
5. Apply 32 V VD. 5. Wait 2 seconds to allow drain capacitor to discharge.
6. Slowly adjust VG until ID is set to 25 mA. 7. Turn off VG
8. Set ID current limit to 0.3 A (Pulsed operation.)
9. Apply RF.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
16 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
4 – 6 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.

4 – 6 GHz Application Circuit - Bill of Materials

Reference Design Value Qty Manufacturer Part Number
R1 10 Ω 1 Vishay CRCW060310R0JNTA
R2 1 kΩ 1 Vishay CRCW06031K00JNTA
C1 0.2 pF 1 Kyocera AVX 600S0R2AT250XT
C2 0.3 pF 1 Passive Plus 0603N0R3AW251X
C3 5.1 pF 1 Kyocera AVX 600S5R1BT250X
C4 10 pF 1 Kyocera AVX 600S100JT250XT
C6, C7, C8 3.3 pF 3 Kyocera AVX 600S3R3BT250XT
C11 220 uF 1 United Chemicon EMVY500ADA221MJA0G
C9 10 uF 1 TDK C1632X5R0J106M130AC
C10 1 uF 1 Kyocera AVX 18121C105KAT2A
L1 3.9nH 1 CoilCraft 0603CS-3N9XJRW
L2 1.8nH 1 CoilCraft 0603CS-1N8XJRW

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
17 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Recommended Solder Temperature Profile

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
18 of 19 www.qorvo.com
 TGF3020-SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Handling Precautions
Parameter Rating Standard
ESD – Human Body Model (HBM) Class 1A (250V) ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM) Class C3 (1000V) JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020 Caution!
ESD-Sensitive Device

Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu

RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
Pb
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2024 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. D, January 2024

Subject to change without notice | All rights reserved
19 of 19 www.qorvo.com
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Qorvo:

TGF3020-SM TGF3020-SM-EVB1