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21PYB102J Unit 1 Notes

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151 views6 pages

21PYB102J Unit 1 Notes

unit 1 notes

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jj9568
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© © All Rights Reserved
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21PYB102J-Semiconductor Physics

Question Bank

Department of Physics, SRMIST, Vadapalani

Unit 1

The electrical and thermal conductivity of metals depend upon?


A. number of protons
B. Number of free electrons
C. Resistance of the metal
D. Number of electrons
Answer: B

According to classical free electron theory, in the absence of external electrical field, the free
electrons__________
A. move randomly and collide with each other
B. move randomly without collision
C. remain stable
D. move uniformly
Answer: A

According to classical free electron theory, once the external electrical field, the free
electrons__________
A. Moves with drift velocity
B. Move randomly
C. Remain stable
D. Collide each other
Answer: A

The first theory proposed to explain the conductivity of materials is __________


A. Classical free electron theory
B. Quantum free electron theory
C. Band theory
D. KP model
Answer: A

The classical free electron theory fails to explain _____________ of metals


A. electrical conductivity
B. thermal conductivity
C Ohm’s law
D. photo electric effect
Answer: D

Which of the following theories can be adopted to rectify the drawbacks of classical theory?
A. Compton theory
B. Quantum theory
C. Band theory
D. Electron theory
Answer: B

The semiconductors are ________ at absolute temperature,


A. Conductor
B. Insulator
C. Semiconductor
D. super conductor
Answer: B
What are the charge carriers in semiconductors?
A. Electrons and holes
B. Electrons only
C. Holes only
D. protons
Answer: A

The motion of electron in periodic potential is explained by


A. Drude Model
B.Lorentz Model
C.Drude – Lorentz Model
D.Kronig Penny Model
Answer: D

According band theory of solids, the splitting up of energy levels start from
A. Outermost shell
B. First Shell
C. Second shell
D.Any Shell

According band theory of solids, the splitting up of energy levels will be maximum at
A. First Shell
B.Second shell
C.Any Shell
D.Outermost Shell
Answer: D

The semiconducting property is explained by __________


A. Classical free electron theory
B. Quantum free electron theory
C. Band theory
D. Compton effect
Answer: C

The fermi level is __________


A. Maximum occupancy level of an electron at 0 K
B. Maximum occupancy level of an electron at higher temperature
C. Bond breaking point
D. Recombination place
Answer: A

Which statement about fermi level is false (not true)?


A. Fermi level separates the filled and empty levels
B. Fermi level is maximum occupancy level of electrons at 0 K
C. The probability of finding electrons is 50% at higher temperatures
D. Fermi level = conduction band
Answer: D

Fermi energy level for intrinsic semiconductors lies


A. At middle of the band gap
B, Close to conduction band
C. Close to valence band
D. depends on the material type
Answer: A
Fermi energy level for n-type semiconductors lies
A. At middle of the band gap
B. Close to conduction band
C. Close to valence band
D. depends on the material type
Answer: B

Fermi energy level for p-type semiconductors lies


A. At middle of the band gap
B. Close to conduction band
C. Close to valence band
D. depends on the material type
Answer: C

The probability that an electron in a metal occupies the Fermi-level, at any temperature (>0 K) is
A. 0
B. 1
C. 0.5
D. none of the above
Answer: C

Consider the following statements: pure germanium and pure silicon are examples of:
1. Direct band-gap semiconductors
2. Indirect band-gap semiconductors
3. Degenerate semiconductors
Of these statements:
A. 1 alone is correct
B. 2 alone is correct
C. 3 alone is correct
D. 2 and 3 are correct
Answer: C

What is a Brillouin zone?


A. A region of energy--‐space that encompasses all of the unique values of energy
B. A region of position--‐space that the electron is allowed to reside within
C. Another name for the unit cell of the crystal
D. A region of k-space that contains all of the unique solutions of the wave equation
Answer: D

When temperature increases, intrinsic concentration increases which results in increase of


A. resistivity
B. conductivity
C. capacitivity
D. all of the above
Answer: B

Energy gap is overlapped between Valence band and conduction band in


A. insulators
B. conductors
C. semiconductors
D. super semiconductors
Answer: B

a unit of vibrational energy due to oscillating atoms within a crystal is known as __________
A. photons
B. phonons
C. Bhor magneton
D. electrons
Answer: B

The thermal conductivity in insulators is due to _________


A. photons
B. phonons
C. Bhor magneton
D. electrons
Answer: B

For electro optic applications, ____________ can be used.


A. Direct band gap semiconductors
B.Indirect band gap semiconductors
C.Both direct and indirect semiconductors
D.Si
Answer: A

____________ is example for direct bandgap semiconductor


A. Si
B. Ge
C. GaAs
D. both Si and Ge
Answer: C

_________ plays an important role in the kinetic theory of solids


A. Density of states
B. Effective mass of electron
C. Effective mass of holes
D. Free electrons
Answer: A

The number of occupied states per unit volume at a given energy of system in thermal equilibrium is
____________
A. density of states x effective mass
B. density of states / effective mass
C. density of states x probability distribution
D. density of states / probability distribution
Answer: C

A hole in the semiconductors treated as __________


A. A free electron
B. A incomplete part of electron pair bond
C. A free proton
D. A free neutron
Answer: B

Which statement is false?


A. The effective mass of a charge carrier is directly proportional to the curvature of E-K curve
B. The effective mass of a charge carrier is inversely proportional to the curvature of E-K curve
C. The effective mass of a charge carrier is positive near the bottom of the conduction band
D. The effective mass of a charge carrier is negative near the top of the valance band
Answer: A
The drift velocity of free electrons with mobility of 3.5 x 10 -3 m2V-1s-1 in copper for an electric field
strength of 0.5 V/m is ____________
A. 1.75 x 10-3 m/s
B. 1.75 x 10-3 m
C. 1.75 x 10-3 m.s
D. 1.75 x 10-3 m2s
Answer: A

The fermi function F(E) for an energy kBT above the fermi energy is ____________
A. 2.68
B. 0.26
C, 26.8
D. 0.026
Answer: B

The probability of finding the electron at E = EF at 100 K


A. 0%
B. 100%
C. 50%
D. 25%
Answer: C

A Cu wire whose diameter is 0.16 cm carries steady current of 10 A, then the current density is
__________
A. 497 x 104 A/m2
B. 497 x 102 A/m2
C. 497 x 103 A/m2
D. 497 x 105 A/m2
Answer: A

If the Resistivity is 1.73 x 108 Ohm .m, then the conductivity is ____________
A. 57.8x10-9 Mho/m
B. 578x10-9Mho/m
C. 5.78x10-9 Mho/m
D. 0.578x10-9 Mho/m
Answer: C

Which is wrong?
A. J = I/A
B. J = nVd(-e)
C. J = σE
D. J = ma
Answer: D
E.K Diagram
1. As the value of (alpha) a increases, the
width of allowed band increases with the
decrease of the width of the forbidden
band gap.

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