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ELE 734 Prelab 1

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83 views2 pages

ELE 734 Prelab 1

answers

Uploaded by

gn4kph2q9n
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1 Installed

2
Vols
Ids
M 4
v19 Vgs 1
t
Vgs 0.8

95 0.4
PMOS Fm
µg Nl
Ids 0 Cutoff Ids 0 Cutoff

Ids BlVort Vsd Triode Ids BlVort Ts Vols Triode

Ids BlaVoci Saturation Ids BlaVoci Saturation

Where B MpCox Where B Mn Cox


E
E
Vat Vsd Ntl Vat Vgs Vt
3 Egfor threshold Voltage of MOS transistor
Vt Vo t y its Of where 0s 2m In H 2 MINI
As VSB increoces thatnominal threshold Voltage increases as
wellbecauseVs would increase the amount of charge required to
invert the channel

4 Channel length modulation is effected when the length of the channel region
is shortin as the drowncurrent increases with an increase in positive drainvoltage
Vols

Thedrain current equation is modified by reducing the length to Left L L2


What Lo is thewidth of thedepletion region thatgetssubtractedfrom the
original length Ids Vai It s

Theeffects of CLM are moreimportant in short channel devices thanthey are


for long channel devices because shorter channels havesmallerlength which is
proportional toresistance and aslength decreases so does resistance which in turn
increases current causing theCLM effect It's less important in longchanneldevices
as ithaslesseffect on currentthus lesseffecton CLM
5 Subsifute conduction is when theMOS transistor is somewhatconducting
voltage below Veit This is because current doesn'tactually justdrop to
Doctorbefore theVocsreachesVin The expression for draincurrentwhenthe
transistoroperates in subthreshold region is Vas Venthus Karsh i e
Ids My fois

Drain

d MOStransistor
Cyd
s Cds
6 Gate
Cgs

Source

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