POWER ELECTRONICS

For
ELECTRICAL ENGINEERING
 POWER ELECTRONICS
SYLLABUS
Characteristics of semiconductor power devices: Diode, Thyristor, Triac, GTO, MOSFET, IGBT;
DC to DC conversion: Buck, Boost and Buck-Boost converters;
Single and three phase configuration of uncontrolled rectifiers, Line commutated thyristor based
converters, Bidirectional ac to dc voltage source converters, Issues of line current harmonics, Power
factor, Distortion factor of ac to dc converters,
Single phase and three phase inverters, Sinusoidal pulse width modulation.

ANALYSIS OF GATE PAPERS

Exam Year 1 Mark Ques. 2 Mark Ques. Total

2003 3 4 11
2004 4 6 16
2005 3 5 13
2006 1 8 17
2007 4 7 18
2008 2 6 14
2009 1 4 9
2010 2 - 2
2011 2 3 8
2012 2 3 8
2013 - 7 14
2014 Set-1 2 3 8
2014 Set-2 1 3 7
2014 Set-3 - 3 6
2015 Set-1 2 3 8
2015 Set-2 2 3 8
2016 Set-1 2 4 10
2016 Set-2 3 4 11
2017 Set-1 2 2 6
2017 Set-2 4 3 10
2018 4 2 8

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 CONTENTS
Topics Page No
1. POWER SEMICONDUCTOR DEVICES

1.1 Introduction 01
1.2 Diodes & Transistors 02
1.3 Thyristors 05
1.4 Uni-junction Transistor (UJT) 14
1.5 Comparison between GTO and Thyristor 15
1.6 Comparison between Transistors & Thyristors 16
1.7 Types of Thyristors 16
1.8 Gate/Base Commutating Devices 19
Gate Question 25

2. PHASE CONTROLLED RECTIFIERS

2.1 1- Half Wave Rectifier 39

2.2 1- Full Wave Bridge Converter 41
2.3 3 -  Converter 43
2.4 Dual Converter 44
2.5 Performance Parameters 45
Gate Question 51

3. CHOPPERS

3.1 Introduction 72
3.2 Step-Up Choppers 73
3.3 Types of Chopper Circuits 74
3.4 Commutation 77
Gate Question 83

4. INVERTERS

4.1 Introduction 96
4.2 Single Phase Bridge Inverter 96
4.3 3- Bridge Inverter 98
4.4 PWM Inverters 100
Gate Question 103

5. ELECTRICAL DRIVERS

5.1 Introduction 116

5.2 Types of SMPS 117

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 5.3 Uninterruptible Power Supplies 120
5.4 Cycloconverter Introduction 120
5.5 Single-Phase to Single-Phase Circuit-Step-Up Cycloconverter 121
5.6 Three-Phase Half-Wave Cycloconverters 124
5.7 AC Voltage Controller 125
5.8 Comparision between Cycloconverter And D.C. Link Converter 127
Gate Question 128

6. ASSIGNMENT QUESTIONS 132

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 1 POWER SEMICONDUCTOR DEVICES

1.1 INTRODUCTION 2. Controlled rectifiers operate at low

power factors and cause derating of the
Power electronics is a branch of associated rectifier transformers
engineering that combines the fields of 3. They do not have a short-time overload
electrical power, electronics, and control. It capacity. However, as their advantages
started with the introduction of the outnumber their demerits, they are
mercury are rectifier in 1900. The grid widely used in the various applications
controlled vacuum tube rectifier, ignitron, detailed above. They have also replaced
and thyratron followed later. These found conventional controllers.
extensive application in industrial power
control till 1950. In the meanwhile the 1.1.3 APPLICATIONS OF POWER
invention of the transistor – a ELECTRONICS
semiconductor device- in 1948 marked a
revolution in the field of electronics. It also 1. Aerospace: Space shuttle power
paved the way for the introduction of the supplies, satellite power supplies,
silicon controlled rectifier (SCR), which aircraft power systems.
was announced in 1957 by the General 2. Commercial: Advertising, heating, air
Electric Company. In due course it has conditioning, central refrigeration,
come to be named as the ‘thyristor’. computer and office equipment,
uninterruptible power supplies,
1.1.1 ADVANTAGES OF POWER elevators, light dimmers and flashers.
ELECTRONIC 3. Industrial: Arc and industrial furnaces,
blowers & fans, pumps & compressors,
1. High efficiency because of low ‘ON state’ industrial lasers, transformer-tap
conduction losses when the power changers, rolling mills, textile mills,
semiconductor is conducting and low excavators, cement mills, welding.
‘OFF state’ leakage when it is blocking 4. Residential: Air conditioning, cooking,
the source voltage lighting, space heating, refrigerators,
2. Reduced maintenance electric-door openers, dryers, fans,
3. Long life personal computers, other
4. Compactness because of the facility of entertainment equipment, vacuum
assembling the thyristors, diodes, and cleaners, washing and sewing machines,
RLC elements in a common package light dimmers, food mixers, electric
5. Faster dynamic response as compared blankets, food-warmer trays.
to electromechanical equipment 5. Telecommunication: Battery chargers,
6. Lower acoustic noise as compared to power supplies (dc and UPS)
electromagnetic controllers. 6. Transportation: Battery chargers,
traction control of electric vehicles,
1.1.2 DISADVANTAGES electric locomotives, street cars, trolley
buses, subways and automotive
1. They generate harmonics which electronics.
adversely affect the loads connected to 7. Utility systems: High voltage dc
them and also get injected into the transmission (HVDC), excitation
supply lines systems VAR compensation, static

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 circuit breakers, fans and boiler-feed
pumps, supplementary energy systems
(solar, wind)

1.1.4 CONTROLLED SWITCHES

Turn on and Turn off by the application of

control signals. BJT, MOSFET, GTO, SITH,
IGBT, SIT, MCT
• SCR, GTO, SITH & MCT require pulse
gate signal for turning them on
• BJT, MOSFET, IGBT, SIT require 1.2.2 DIODE REVERSE RECOVERY
continuous signal for keeping them in CHARACTERISTIC
turn on state (Dynamic Characteristics)
• The devices which can with stand
unipolar voltage are BJT, MOSFET,
IGBT, MCT
• Thyristors and GTOs are capable for
supporting bipolar voltages.
• Triac and RCT (Reverse Conducting
Theory) possess bidirectional current
capabilityDiode, SCR, GTO, BJT,
MOSFET, IGBT, SIT, SITH, MCT are
unidirectional current devices

1.2 DIODES & TRANSISTORS

1.2.1 POWER DIODES

Power semiconductors devices are more

complex in structure and in operation. Low
power devices must be modified in order to
Diode continuous to conduct in the reverse
make them suitable for high power
direction because of the presence of
applications. Power diodes are constructed
storage changes in the two layers (trr). The
with n- layer called drift region, because p+
diode regains its blocking capability until
layer (anode) and n+ layer (cathode). This is
reverse recovery current decays to zero.
done to support large blocking voltages.
The ratio of tb/ta is called the softness
Power devices operate at lower switching
factor or s-factor show the voltage
speeds whereas signal diodes and
transient, that occur during the time diode
transistors operate at higher switching
recovers
speeds.
s=1 low oscillatory reverse recovery
process.
Applications:
s small → diode has large oscillatory over
1) As freewheeling diodes
volt
2) For recovery of trapped energy
s=1 soft recovery diode
s<1 snappy recovery diode/ or fast
Static Characteristic of power diodes recovery diode.
Peak inverse current IRM = ta di/dt

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 1.2.3 TYPES OF POWER DIODES time as in a junction diode. The reverse
voltage of a Schottky diode is limited by
1. General Purpose Diodes its structure. It is designed to minimize
Higher reverse recovery time trr (25 μs), the forward voltage drop necessitating
Current rating1A to 1000A,Voltage extremely low contact resistance. The
rating 50V to 5KV high resistivity epitaxial layer is
Applications: sufficiently thin to reduce the series
Battery charging resistance.
Electric traction Device Recovery Time
Electro plating Schottky diode 150 µs
Welding Alloyed p-n junction 5 µs
UPS Diffused p-n junction 3 µs
Fast recovery p-n junction 1 µs
2. Fast recovery diodes
trr = 5μs or less, Voltage : 50V to 3KVolt, 1.2.4 POWER TRANSISTORS TYPES
1A to K amp.
In order to shorten the reverse 1. Bipolar junction Transistors (BJTs)
recovery time platinum or gold doping 2. Metal-oxide semiconductor FET
is carried outbut this doping is carried (MOSFET)
out → increase forward drop in diode 3. Insulated Gate Transistors (IGBTs)
Applications: 4. static induction transistors (SIT)
Chopper
Commutator circuits 1) Bipolar junction Transistors (BJTs)
Switching mode power supply (SMPS) Three layers, two junctions pnp/ npn,
Induction heating current control device,
bipolar→current flow in it is due to
3. Schottky diodes moment of both holes and electrons.
This class of diodes use metal to Arrow indicate the direction of current.
semiconductor junction for rectification Steady state characteristics
purposes instead of pn-junction. Fast
recovery time. Low forward volt drop,
1A to 300A current.
Application:
High frequency instruments
Switching power supplies
150
CURRENT(A)

75

20 15 10 5 2 4 6 8 1
-V +V

-100mA
In a Schottky diode, only electrons
participate in the conduction
mechanism unlike in p-n junction
diodes because there are no holes in the
metal. As a result, there is no minority
carrier storage decreasing the recovery

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 Two Types:
Input characteristics: In between 1. n-channel enhancement
input current IB and base –emitter 2. p-channel enhancement
voltage VBE. n-channel enhancement MOSFET is
Output characteristics: The graph more common because of higher
between IC and collector meter voltage mobility of electrons (Sio2) insulating
VCE. layer.
V − VCE I
Ic = CC α= C value
RC IE Equivalent Circuit of Power MOSFET
of α varies from 0.95 to 0.99
I
β = C value of varies from 50 to 300
IB
IC
=
β h= FE , IE = IC + IB
IB
α β
β= , α=
(1 − α) β +1

2) Metal- oxidesemiconductor FET The above discussed major

(MOSFETs) performance advantages of power
voltage control, Low control signal MOSFET over bipolar transistors can be
Gate circuit impedance of MOSFET is summarized in tabular form as:
extremely high
Power BJT Power MOSFET
1. BJT is a minority as 1. MOSFET is a
well as majority majority carrier
carrier device device.
2. BJT is a current 2. MOSFET is a
controlled device. voltage controlled
device.
3. BJT has negative 3. MOSFET has
temperature positive temperature
coefficient. coefficient.
4. BJT cannot operate 4. MOSFET can
at very high operate at higher
frequency. frequencies.
5. BJT has different 5. FBSOA and RBSOA
shapes for the FBSOA are identical.
and RBSOA.
6. Second breakdown 6. No possibility of
can take-place second breakdown.
7. Peak-current 7. Peak current
capability is less than capability of MOSFET
that of MOSFET. is higher than that of
BJT.

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 8. BJTs are less 8. MOSFETs are more to IGBTs.
sensitive to voltage sensitive to voltage 6. Power MOSFETs is 6. IGBT is the preferred
spikes than MOSFETs. spikes than BJT. suited for application device for applications
9. The on-state 9. The on-state that require low that require high
voltage is lower than voltage is higher than blocking voltage and blocking voltages and
that of power- that of power BJT. high operating lower operating
MOSFET. Therefore, frequencies. frequencies.
the on-state loss is
lower. Application of IGBTs
10. Conduction losses 10. Conduction losses
of a BJT are less than of a MOSFET are
IGBTs are widely used in medium
that of MOSFET. greater than BJT. power application such as dc and ac
11. Switching losses 11. Switching losses motor drives, UPS systems, Power
are more. are less. supplies and drives for solenoids, relays
12. More energy 12. More energy and contactors. Though IGBTs are
efficient at low efficient at high
somewhat more expensive than BJTs,
frequency frequency.
yet they are becoming popular because
of lower gate-drive requirements, lower
3) Insulated Gate Transistors (IGBTs):
switching losses and smaller snubber
IGBT has been developed by combining
circuit requirements. IGBT converters
into it the best qualities of both BJT and
are more efficient with less size as well
PMOSFET. Thus an IGBT possesses high
as cost, as compared to converters
input impedance like a PMOSFET and
based on BJTs. Recently, IGBT iverter
has low on-state power loss as in a BJT.
induction-motor drives using 15-20 kHz
Further, IGBT is free from second
switching frequency are finding favour
breakdown problem present in BJT. All
where audio-noise is objectionable. In
these merits have made IGBT very
most application, IGBTs will eventually
popular amongst power-electronics
push out BJTs. At present, the state of
engineers.
the art IGBTs of 1200 V, 500 A ratings
Comparison of IGBT and MOSFET
MOSFETs IGBTs 0.25 to 20 µ s turn-off time with
1. In the power MOSFET, 1. In IGBTs, this increase operating frequency upto 50 KHz
the decrease in the in voltage drop is very available.
electron mobility with small.
increasing temperature
results in a rapid
4) PUT (Programmable Unifunction
increase in the on-state Transistor): The characteristic of PUT
resistance of the and UJT are similar, the peak and valley
channel and hence the currents of the PUT are typically lower
on-state drop. than those of the UJT of a similar rating.
2. The on-state voltage 2. Here with the identical
drop increases by a condition, the increment
factor of 3 between in the on-state voltage 1.3 THYRISTORS
room temperature and drop is very
200oC small Bell Laboratories were the first to fabricate
3. All highest 3. At high ambient a silicon-based semiconductor device called
temperature, maximum temperature; IGBT is
thyristor. Semiconductor devices, with
current rating goes extraordinarily well
down to 1/3 value. suited. their characteristics identical with that of a
4. Current sharing in 4. Current sharing in thyristor, are triac, diac, silicon-controlled
multiple paralleled multiple paralleled switch, programmable unijunction
MOSFETs is IGBTs is far better than transistor (PUT), GTO, RCT etc. This whole
comparatively poor power MOSFET. family of semiconductor devices is given
than IGBTs.
5. The turn-on 5. Turn-on transients are the name thyristor. Thus the term thyristor
transients are identical identical to MOSFETs. denotes a family of semiconductor devices

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 used for power control in dc and ac reverse biased. In this mode, a small
systems. current, called forward leakage current.
Anode A A SCR offers a high impedance. Therefore, a
thyristor can be treated as an open switch.
p J1 Forward conduction mode: Reverse
n J2 G biased junction J2 will have an avalanche
Gate p breakdown at a voltage called forward
n J3 G
breakover voltage VBO. A thyristor can be
K K brought from forward blocking mode to
forward conduction mode by turning it on
Cathode
by applying (i) a positive gate pulse
between gate and cathode or (ii) a forward
breakover voltage across anode and
cathode.

1.3.2 THYRISTOR TURN-ON METHODS

1. Forward voltage triggering: Depletion

layer is formed across junction J2. The
A thyristor has characteristics similar to a width of this layer decreases with an
thyratron tube. A thyristor (a pnpn device) increase in anode-cathode voltage.
belongs to transistor (pnp or npn device) Anode-cathode is gradually increased,
family. The name ‘thyristor’, is derived by a depletion layer across J2 vanishes. At
combination of the capital letters from this moment, reverse biased junction J2
THYRatron and transISTOR. is said to have avalanche breakdown
An SCR is so called because silicon is used and the voltage at which it occurs is
for its construction and its operation as a called forward breakover voltage VBO.
rectifier can be controlled. A thyristor also as a result, large forward anode-current
blocks the current flow from anode to flows. As stated before this forward
cathode until it is triggered into conduction current is limited by the load
by a proper gate signal between gate and impedance.
cathode terminals. The magnitudes of forward breakover
and reverse breakdown voltages are
1.3.1 STATIC I-V CHARACTERISTICS OF nearly the same and both are
A THYRISTOR temperature dependent. In practice, it is
found that VBR is slightly more than VBO.
Therefore, forward breakover voltage is
taken as the final voltage rating of the
device during the design of SCR
applications.
After the avalanche breakdown,
junction J2 loses its reverse blocking
capability. Therefore, if the anode
voltage is reduced below VBO SCR will
continue conduction of the current. The
SCR can now be turned off only by
reducing the anode current below a
Forward blocking mode:Junctions J1, J3 certain value called holding current
are forward biased but junction J2 is

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 2. Gate Triggering: Turning on of 3. With forward voltage across the
thyristors by gate triggering is simple, anode and cathode of a thyristor, the
reliable and efficient; it is therefore the two outer junctionJ1, J3 are forward
most usual method of firing the forward biased, but inner junction J2, has the
biased SCRs. A thyristor with forward characteristics of a capacitor due to
breakover voltage (say 800 V) higher charges existing across the junction. In
than the normal working voltage (say other words, space-charges exist in the
400 V) is chosen. depletion region near junction J2 and
When positive gate current is applied, therefore junction J2 behaves like a
gate p layer is flooded with electrons capacitance. If forward voltage is
from the cathode. This is because suddenly applied, a charging current
cathode n layer is heavily doped as through junction capacitance Cj may
compared to gate p layer. As the turn on the SCR.
thyristor is forward biased, some of dQ d dV dC j
these electrons reach junction J2. As a ic = = (Cj.Va) = Cj a + Va.
dt dt dt dt
result, width of depletion layer near ……..(4.1a)
junction J2 is reduced. This causes the As the junction capacitance is almost
junction J2 to breakdown at an applied dC j
voltage lower than the forward constant, is zero
breakover voltage VBO. If magnitude of dt
gate current is increased, more dV
iC = Cj a
electorns would reach junction J2, as a dt
consequence thyristor would get turned Therefore, if rate of rise of forward
on at a much lower forward applied voltage dVa/dt is high, the charging
voltage. current ic would be more. This charging
current plays the role of gate current
and turns on the SCR even though gate
signal is zero.

4. Temperature Triggering (Thermal

Triggering): During forward blocking,
most of the applied voltage appears
across reverse biased junction J2. This
voltage across, J2, associated with
leakage current, would raise the
temperature of this junction. With
increase in temperature, width of
depletion layer decreases. This further
leads to more leakage current and
therefore, more junction temperature.
With the cumulative process, at some
high temperature (within the safe
limits), depletion layer of reverse
biased junction vanishes and the device
gets turned on.

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 Voltage g

Gate pulse

Anode voltage a And gate current ig

0.9Va OA=Va=Initial anode voltage

A
Va
Ig
0.9Ig On state voltage tc
drop across SCR
0.1Va tq

t
Anode current Reverse voltage
ia Ia=Load current due to power circuit

0.9Ia
Anode current Commutation di
begins to dt
Recovery Recombination
decrease
t1 t2 t3 t4 t5
0.1Ia

td tr tp t
Forward
leakage ton
current Steady state tgr
Power loss operation trr
(vaia)
tq
tc

Time in Microsec t

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 5. Light Triggering: For light-triggered from 0.9Ia to Ia. It is also defined at the
SCRs, a recess (or niche) is made in the time for the forward blocking voltage to
inner p-layer as shown in Fig. When this fall form 0.1 of its initial value to the on-
recess is irradiated, free charge carriers state voltage drop (1 to 1.5V). During
(pairs of holes and electrons) are this time, conduction spreads over the
generated just like when gate signal is entire cross-section of the cathode of
applied between gate and cathode. SCR.
Anode Thyristor manufacturers usually specify
the rise time which is typically of the
p order of 1 to 4 µ sec.
J1
n
Light p J2 1.3.4 SWITCHING CHARACTERISTICS
n J3 DURING TURN-OFF

Thyristor turn-off means that it has

Cathode changed from on to off state and is capable
of blocking the forward voltage. It is
1.3.3 SWITCHING CHARACTERISTICS essential that the thyristor is reverse
DURING TURN-ON biased for a finite period after the anode
current has reached zero. The turn-off time
A transition time from forward off-state to tq The turn-off time is divided into two
forward on state. This transition time, intervals; reverse recovery time trr and the
called thyristor turn-on time, is defined as gate recovery time tgr; i.e. tq = trr+ tgr. The
the time during which it changes from reason for the reversal of anode current
forward blocking state to final on-state. after t1 is due to the presence of carriers
Total turn-on time can be divided into stored in the four layers. The reverse
three intervals; (i) delay time td, (ii) rise recovery current removes excess carriers
time tr and (iii) spread time tp, from the end junctions J1 and J3 between
the instants t1 and t3. The fast decay of
i) Delay time td: which gate current recovery current causes a reverse voltage
reaches 0.9 Ig to at which anode current across the device due to the circuit
reaches 0.1Ia. inductance. This reverse voltage surge
ii) Rise time tr: Thr rise time tr is the time appears across the thyristor terminals and
taken by the anode current to rise from may therefore damage it. In practive, this is
0.1Ia to 0.9Ia. forward blocking off-state avoided by using protective RC elements
voltage to fall from 0.9 to 0.1 of its across SCR.
initial value OA. The rise time is At the end of reverse recovery period (t3-
inversely proportional to the magnitude t1), the middle junction J2 still has trapped
of gate current and its build up rate. charges, therefore, the thyristor is not able
Thus tr can be reduced if high and steep to block the forward voltage at t3. The
current pulses are applied to the gate. trapped charges around J2, i.e. in the inner
However, the main factor determining tr two layers, cannot flow to the external
is the nature of anode circuit. For circuit, therefore, these trapped charges
example, for series RL circuit, the rate must decay only by recombination. This
of rise of anode current is slow, recombination is possible if a reverse
therefore, tr is more. For RC series voltage is maintained across SCR, though
circuit, di/dt is high, tr is therefore, less. the magnitude of this voltage is not
iii) Spread time tp: The spread time is the important. The rate of recombination of
time taken by the anode current to rise charges is independent of the external

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 circuit parameters. The time for the
recombination of charges between t3 and t4
is called gate recovery time tgr. The
thyristor turn-off time tq is in the range of 3
to 100 µ sec.

1.3.5 THYRISTOR GATE

CHARACTERISTICS

Pgm T
≥ Pgavor Pgm.T.f ≥ Pgav
T1
Pgav
≤ Pgm
fT
Pgav
or f=
T.Pgm
T
δ= = fT
T1
Pgav
or = Pgm
δ

1.3.6 TWO –TRANSISTOR MODEL OF A

THYRISTOR

Trigger circuit feeding power to gate-

cathode circuit. For this circuit, the internal
resistance Rs of trigger source should be
such that current (Es/Rs) is not harmful to
the source as well as to the gate circuit
when SCR is turned on.
A resistance R1 is also connected across
gate-cathode terminals, so as to provide an
easy path to the flow of leakage current
between SCR terminals. With pulse
triggering, greater amount of gate power
dissipation can be allowed; this should,
however, be less than the peak
instantaneous gate power dissipation Pgm
as specified. Frequency of firing (or pulse
width) for trigger pulses can be obtained
by taking pulse of (i) amplitude Pgm (ii)
pulse width T and (iii) periodicity T1.
Therefore,

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 α 2 Ig + ICBO1 + ICBO2 density. This localized heating may
Ia = destroy the thyristor. The value of di/dt
1 − (α1 + α 2 )
can be maintained below acceptable
SCR derating below dc value =
limit by using a small inductor, called
I  1  di/dt inductor. Typical di/dt limit
Idc - dc =Idc 1 − 
FF  FF  values of SCRs are 20-500 A/ µ sec.

1.3.7 SURGE CURRENT RATING b) dv/dt protection: If rate of rise of

suddenly applied voltage across
A surge current rating indicates the thyristor is high, the device may get
maximum possible non-repetitive, or surge, turned on. dVa/dt must be kept below
current which the device can withstand. the specified rated limit. Typical values
This rating is specified in terms of the of dv/dt are 20-500 V/ µ sec.
number of surge cycles with corresponding
surge current peak. Surge current rating in 1.3.9 DESIGN OF SNUBBER CIRCUITS
inversely proportional to the duration of
the surge. It is usual to measure the surge A capacitor Cs in parallel with the device is
duration in terms of the number of cycles sufficient to prevent unwanted dv/dt
of normal power frequency of 50 or 60 Hz. triggering of the SCR. When switch S is
For example, a three-cycle surge current closed, a sudden voltage appears across the
rating for a period of 60 msec (3 × 20 msec) circuit. Capacitor Cs behaves like a short
for 50 Hz supply consists of three circuit, therefore voltage across SCR is zero.
conducting half-cycles, each followed by an
off-period.
One cycle surge current rating is the peak
value of allowable non-recurrent half-sine
wave of 10 msec duration for 50 Hz. For
duration less than half-cycle i.e. 10 msec, a
subcycle surge current rating is also
specified.
i = I(1-e-t/ τ )
T
I 2sb .t = I2.T Isb = I where I =
Vs
t Rs + RL
where T = time for one half-cycle of supply
L
frequency, sec and τ =
I = one-cycle surge current rating, A Rs + RL
Isb= subcycle surge current rating, A R + R L -t/ τ
=I.e-t/ τ . =
di 1 Vs
. s e
t = duration of subcycle surge, sec dt τ Rs + RL L
For 50 Hz supply, T = 10 msec The value of di/dt is maximum when t = 0.
I 1
∴ Isb = .  di  Vs
10 t   =
 dt  max L
1.3.8 THYRISTOR PROTECTION Vs 240 ×10−6
L= =
(di / dt) max 50
a) di/dt protection: If the rate of anode = 4.8 µ H
current, i.e.dt/dt, is large as compared The voltage across SCR is given by, va = Rs .i
to the spread velocity of carriers, local dv a di
hot spots will be formed near the gate = Rs.
dt dt
connection on account of high current

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  dv a   di 
  = Rs.  
 dt max  dt max
 dv a  R s .Vs
  =
 dt max L
L  dv a 
or Rs =  
Vs  dt max
4.8
= × 300 = 6 Ω
240
L
Rs = 2 ξ
Cs
2 1.3.11 OVERCURRENT PROTECTION
 2ξ 
∴ Cs =   L
 Rs 
 2 × 0.65 
2

=  × 4.8 × 10 = 0.2253 µ F
-6
 6 

1.3.10 OVERVOLTAGE PROTECTION

i) Internal overvoltages. Large voltages

may be generated internally during the
commutation of a thyristor. After If a thyristor is subjected to overcurrent
thyristor anode current reduces to zero, due to faults, short circuits or surge
anode current reverses due to stored currents, a need for the overcurrent
charges. This reverse recovery current protection of SCRs both circuit breaker and
rises to a peak value at which time the fast-acting current-limiting fuse are used
SCR begins to block. After this peak, for overcurrent protection of SCR.
reverse recovery current decays
abruptly with large di/dt. Because of 1.3.12 IMPROVEMENT IN DI/DT RATING
the series inductance L of the SCR
circuit, large transient voltage L (di/dt) i) by using a higher-gate current
is produced. ii) by intermixing the gate-cathode
ii) External overvoltages. External regions.
overvoltages are caused due to the
interruption of current flow in an 1.3.13 IMPROVEMENT IN DV/DT RATING
inductive circuit. The effect of
overvoltages is usually minimized by It isminimized by using cathode-short
using RC circuits & non-linear resistors structure
called voltage clamping devices.
1.3.14 THERMAL RESISTANCE,
JUNCTION TO CASE, (ΘJC)

It is the ratio of the difference between the

junction temperature Tj and the case
temperature TC to the total or average
power losses P.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Tj − Tc Stringe fficiency=
θJC = 0
C/W Actual voltage / current rating of the whole string
P [Individual voltage / current rating of oneSCR][Number of SCRs in the string]
Derating factor DF
1.3.15 THERMAL RESISTANCE, HEAT DRF = 1-string efficiency
SINK TO COOLING MEDIUM, (ΘSA)
A uniform voltage distribution in steady
It is the ratio of the difference between the state can be achieved by connecting a
sink temperature TS and cooling-medium suitable resistance across each SCR
temperature TA to the total power losses P This shunt resistance R is called the
T −T staticequalizing circuit
θSA =S A 0
C/W
P

1.3.16 NONREPETITIVE SURGE CURRENT

RATING

Surge current is assumed to be imposed on

the device when it is operating at maximum
rated voltage, current and temperature
condition in a half-wave circuit delivering a
resistance load.
During this brief period, the forward
blocking capability of the device is lost until
the device is cooled down to or below the
maximum rated operating temperature.
This surge current is not a regular feature
of the device and occurs during severe fault
condition and these ratings provide the
instantaneous overload capacity of the
device and are used to design the
protective devices for it. These ratings are
generally provided in terms of
nonrecurring surge current with respect to
time duration of occurrence and I2t. The
maximum surge current rating is provided
for a minimum time duration of one half-
cycle of the supply frequency, i.e. 10 m s;

1.3.17 SERIES & PARALLEL OPERATION

OF THYRISTORS

SCRs are connected in series in order to

meet the h.v. demand and in parallel for
fulfilling the high current demand. For
series or parallel connected SCRs. It should
be ensured that each SCR rating is fully
utilized and the system operation is
satisfactory. String efficiency is a tem that
is used for measuring the degree of
utilization of SCRs in a string.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 1.3.18 PARALLEL OPERATION

If one SCR1 in a parallel unit carries more

current than other SCRs, then this SCR1
will have greater junction temperature rise.
As a result, its dynamic resistance
(=dVT/dIa) during forward conduction,
decreases and this further increases the b) RC firing circuits: The limited range of
current shared by this SCR. firing angle control by resistance firing
circuit can be overcome by RC firing
circuit.

1.4 UNIJUNCTION TRANSISTOR (UJT)

This process of anode current rise becomes Resistance and RC triggering circuits
cumulative and subsequently the junction described above give prolonged pulses. As
temperature of SCR1 exceeds its rated a result, power dissipation in the gate
value; as a result SCR1 is damaged. circuit is large. At the same time, R and RC
Therefore, when SCRs are to be operated in triggering circuits cannot be used for
parallel, it should be ensured that they automatic or feedback control systems.
operate at the same temperature. This can These difficulties can be overcome by the
be achieved by mounting the parallel unit use of UJT triggering circuits.
on one common heat sink. Current
distribution can be made more uniform by
the magnetic coupling of the parallel paths
as shown in Fig.

1.3.19 FIRING CIRUCITS FOR THYRISTORS

Resistance and Resistance-Capacitance

Firing Circuits Pulse triggering is preferred as it offers
several merits over R and RC triggering.
a) Resistance firing circuits, suffer from a Gate characteristics have a wide spread, As
limited range of firing angle control (00 pulses with higher gate current are
to 900) permissible, pulse firing is more reliable
and faster.
When a voltage VBB is applied across the
two base terminals B1 and B2, the potential
of point A with respect to B1 is given by
VBB R B1
VAB1 = . RB1= .
R B1 + R B2 R B1 + R B2
VBB = η VBB
R B1
where η = is called the intrinsic
Vm R B1 + R B2
.R ≤ Vgm
R1 + R stand-off ratio. Typical values of η are 0.51
V .R to 0.82.
R ≤ gm 1
Vm − Vgm

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 when source voltage VBB is applied, Vp = η VBB +VD = Vv +VBB (1-e-T/RC)
capacitor C begins to charge through R VD =Vv, η =(1-e-T/RC)
exponentially towards VBB. During this
1  1 
charging, emitter circuit of UJT is an open T= = RC 1n  
circuit. The capacitor voltage vC, equal to f  1− η 
emitter voltage ve, is given by then the value of firing angle α 1 is given by
vc = ve =VBB(1-e-t/RC) α 1 = ω T = ω RC
τ 1 =RC. 1
1n
1− η
where ω is the angular frequency of UJT
oscillator

1.4.1 PULSE TRANSFORMER IN FIRING

CIRCUITS

Pulse transformers are used quite often in

firing circuits for SCRs and GTOs. This
transformer has usually two secondaries.
These transformers are designed to have
When this emitter voltage ve (or vc) reaches low winding resistance, low leakage
the peak-point voltage Vp (= η VBB +VD), the reactance and low inter-winding
unijunction between E-B1 breaks down. As capacitance. The advantages of using pulse
a result, UJT turns on and capacitor C transformers in triggering semiconductor
rapidly discharges through low resistance devices are:
R1 with a time constant τ 2 =R1C. Here τ 2 is i) the isolation of low-voltage gate circuit
much smaller than τ 1 . When the emitter from high-voltage anode circuit and
ii) the triggering of two or more devices
voltage decay-point voltage Vv, emitter from the same trigger source.
current (Vv/RB1+R1) falls below Iv and UJT A square pulse at the primary terminals
turns off. of a pulse transformer may be
transmitted at its secondary terminals
faithfully as a square wave or it may be
transmitted as a derivative of the input
waveform.

1.5 COMPARISON BETWEEN GTO

AND THYRISTOR

GTO disadvantage over SCR

i) more IL& IH
ii) on state voltage drop & losses more.
iii) Triggering gate current high.
iv) Reverse voltage blocking capability is
less

GTO Advantage
i) GTO has faster switching speed
ii) comparable surge current capability
iii) more di/dt rating

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 iv) GTO circuit has lower size and weight high power application of hand, have a proven
v) GTO has higher efficiency transistors. Power record of many years
transistors or Darlington of reliable operation.
vi) GTO unit has reduced acoustical and pairs are more susceptible
electromagnetic noise due to to failure.
elimination of commutation chokes.
Modern era of solid-state power-
1.6 COMPARISON BETWEEN electronics began with the advent of
TRANSISTORS & THYRISTORS thyristor (silicon controlled rectifier) in the
late 1950’s. Gradually, other devices such
Transistors Thyristors as traic (1958), gate-turn-off thyristor
(1) Transistor is a three- (1) Thyristor is a
layer, two junction device. four layer, three
(GTO-1958), bipolar transistor (IGBT-
junction device. 1985), static induction transistor (SIT-
(2) To keep a transistor in (2) Thyristors 1975) and integrated gate commtated
the conducting state, a require a pulse to thyristor (IGCT-1987) were introduced.
continuous base current is make it conducting The BJT appeared and then fell into
required. and thereafter it
remain conducting
obsolescence due to the advent of IGBT at
(3) When transistor (3) The forward the higher end and power MOSFET at the
(power transistor) conduct voltage drop across lower-end. The invention of IGBTs is an
appreciable current, the the device is of the important milestone in the history of
forward voltage drop is of order of 1.2 to 2V. power-semiconductor devices. Commercial
the order of 0.3 to 0.8 V.
IGBTs are available with 3.5 kV, 1.2 kA, but
(4) The voltage and current (4) Due to the
ratings of transistors difference in upto 6.5 kVand 10 kV devices are under
available at present are not fabrication and test in laboratory. Trench gate IGBT with
as high as those of operation, thyristors reduced conduction drop is available up to
thyristors. with very high 1.2 kV, 600 A. IGBT intelligent power
voltage and current
modules (IPM) from number of vendors are
ratings are available.
(5) Power transistors have (5) Thyristors have available for 600 A. 50-300 A and 1200 V,
no surge current capacity surge-current rating 50-150 A to cover upto hp ac drive
and can withstand only a and therefore can applications. IGCT (also called GCT) is
low rate change of current. withstand high rate basically a hard-drived GTO with built-in
of change of current gate driver, and device is available with 6
compared to
transistors. kV, 6 kA (10 kV device, are under test). ABB
(6) Commutation circuitry, (6) Commutation introduced recently a reverse blocking
which is costly and bulky, circuit is required. IGCT (6 kV, 800 A) for use in current-fed
is not required. inverter drives.
(7) Power transistors (7) Thyristors are
switch on faster than SCRs, used in
and turn-off problems are comparatively low
1.7 TYPES OF THYRISTORS
practically non existent. If frequency
the base current is applications. i) Phase-Control Thyristors
removed, the transistor ii) Inverter-Grade Thyristors (fast-
turns of f. Therefore, switchingSCRs)
power-transistors can be
used in very high-
iii) Asymmetrical-Thyristors (ASCRs)
frequency applications. iv) Reverse-conducting Thyristors (RCTs)
(8) Circuits using power (8) Comparatively v) Gate-Assisted Turn-off Thyristors
transistors will be smaller larger in size and is (GATTs)
in size and less costly costlier. vi) Bidirectional Diode Thyristors (DIACs)
compared to circuits using
vii) Bidirectional Triode Thyristors (Triacs)
thyristors.
(9) There has been little (9) Thyristor viii) Silicon Unilateral Switch (SUS)
operating experience in circuits, on the other ix) Silicon Bilateral Switch (SBS)

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 x) Silicon-Controlled Switch (SCS) volts, but this capability is not required for
xi) Light-Activated silicon Controlled every application. In particular, the voltage-
Rectifiers(LASCRs) fed inverter circuit, which converts d.c.
power to a.c., usually has rectifier diode
In general, the turn-on operation of the connected in antiparallel across each
devices of this type is controllable using a thyristor to conduct reactive load currents
trigger signal. However, the turn-off and excess commutating current. In such
operaion depends upon the condition of the circuits, the antiparallel diode clamps the
power circuit. Hence, in this type, only thyristor reverse voltage to 1 or 2 V under
turn-on switching is externally steady circuits conditions.
controllable. One of the main characteristics of an
asymmetrical thyristor (ASCR) is that they
1.7.1 INVERTER-GRADE THYRISTORS do not block significant reverse voltage.
Therefore, an ASCR is specifically, the
The most common feature of an inverter- reverse voltage rating is about 20 or 30 V
grade thyristor which distinguishes it from and the forward voltage rating is of the
a standard phase control type is that it has range 400-2000 V. The switching times and
fast turn-off time, generally in the range of on-state voltage drop of an ASCR are
5 to 50 µs, depending upon voltage rating. smaller than those of a conventional
Therefore, these are used high-speed thyristor of the same rating. As already
switching applications with forced indicated, a fast turn off is important
commutation. because it minimizes the size, weight and
Inverter thyristors are generally used in cost of commutating circuit components,
circuits that operate from d.c. supplies and permits operation at switching
where current in the thyristor is turned off frequencies of 20 kHz, or more with high-
either through the use of auxiliary efficiency.
commutating circuitry, by circuit
resonance, or by “load” commutation. 1.7.2 REVERSE CONDUCTING
Whatever be the circuit turn-off THYRISTOR (RCT)
mechanism, fast turn-off is important
because it minimizes size and weight of
commutating and/or reactive circuit
components.

These thyristors have high dv/dt of The reverse conducting thyristor is simply
typically 1000 V/µs and di/dt of 1000 A/µs. an asymmetric thyristor with a
The fast turn off and high di/dt are very monolithically integrated, antiparallel
important to reduce the size and weight of diode in a single silicon chip. By combining
commutating and/or reactive circuit the ASCR and the diode in one device, a
components. The conduction voltage of a more compact circuit layout is obtained
2200 A, 1800 V thyristor is typically 1.7 V. and heat sinking is simplified.
The conventional thyristor may have a The forward blocking voltage varies from
reverse blocking capability of thousands of 400 to 2000 V and the current rating goes

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 upto 500 A. The reverse blocking voltage is 1. Triacs can be triggered with positive or
typically 30 to 40 V. A disadvantage of the negative polarity voltages.
RCT is that it is inflexible compared with 2. A Triac needs a single heat sink of
two discrete devices. slightly larger size, whereas antiparallel
In the voltage source inverter, the load thyristor pair needs two heat sinks of
current is controlled by the thyristor and slightly smaller sizes, but due to the
flows freely in the other direction through clearance total space required is more
the diode. For such circuits, the RCT must for thyristors.
have equal current ratings for thyristor and 3. A Triac needs a single fuse for
diode sections. Purpose designed RCT protection, which also simplifies
devices are now being manufactured for construction.
high performance inverter and chopper 4. In some d.c. applications, SCR is
circuits. required to be connected with a parallel
diode to protect against reverse voltage,
1.7.3 BIDIRECTIONAL DIODE whereas a Triac used may work without
THYRISTOR (DIAC) a diode, as safe breakdown in either
direction is possible.
A Diac is a two electrode, bidirectional
avalanche diode which can be switched 1.7.5 SILICON UNILATERAL SWITCH (SUS)
from the off-state to the on-state for either
polarity of applied voltage. Conduction The major difference in function between
occurs in the Diac when the breakover the SUS and UJT in relaxation oscillator
voltage is reached in either polarity across circuitry is that the SUS switches at a fixed
the two terminals. Diac is mainly used as a voltage, determined by its internal
trigger device for Triacs which require avalanche diode, rather than a fraction (η )
either positive or negative gate pulses to of another voltage. Also, it should be noted
turn ON. In fact, matched Diac-Triac pairs that the switching current Is is much higher
are available in the market for various in the SUS than in the UJT, and is also very
types of control circuits. close to IH. These factors restrict the upper
and lower limits of frequency or time delay
1.7.4 BIDIRECTIONAL TRIODE which are practical with the SUS. For
THYRISTOR (TRIAC) synchronization, lock-out, or forced
switching, bias or pulse signals may be
Because of the interaction between the two applied to the gate-terminal of the SUS.
halves of the device, Triacs are limited in
voltage, current, and frequency ratings as
compared with conventional thyristors.
The Triac finds widespread use in
consumer and light indudtrial appliances
operating from 50 or 60 Hz a.c. supplies at
moderate power levels. The plastic
encapsulated Triac is a particularly cheap
and compact device and is widely used for
controlling the speed single-phase a.c.
series or universal motors, in such 1.7.6 SILICON BILATERAL SWITCH (SBS)
consumer appliances as food mixers and
portable drills. SBS is a device which essentially comprises
two identical SUS structures, arranged in
Advantages of Triac antiparallel, name indicates, the device

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 conducts in both directions when the LASCRs offer complete electrical isolation
applied voltage breaks the internal between the light-triggering source and the
avalanche diode. switching device of a power converter,
which floats at a potential of as high as a
few hundred kilovolts. The voltage rating of
a LASCR could be as high as 4 kV at 1500 A
with light triggering power of less than 100
mW. The typical di/dt is 250 A/ms and the
dv/dt could be as high as 200 V/µs.

Fig (a).(b) Silicon Bilateral switch

1.8 GATE/BASE COMMUTATING DEVICES
1.7.7 SILICON CONTROLLED SWITCH
(SCS) Both turn-on and turn-off operations of the
device under this type are externally
The additional lead is connected to the N controllable by base or gate signals. High
region below the anode P region. SCS has switching frequency devices which belongs
two gates, one anode gate like a PUT and to this type are:
another cathode gate like and SCR, as i) Power-BJT
shown in Fig. The SCS can be turned-off in ii) Power-MOSFETs
any of the three ways: iii) Gate-Turn-off Thyristors (GTOs)
1) By reducing its anode current below IH iv) Static-Induction Transistors (SITHs)
(same as SCR), v) Static-Induction Transistors (FCTs)
2) By applying a negative pulse at Gk, vi) Field-Controlled Thyristors (FCTs)
3) By applying a positive pulse at GA. vii) MOS-Controlled Thyristors (MTOs)
Viii) MOS-Turn-off Thyristors (MTOs)
ix) Integrated Gate Commutated Thyristors
(IGCTs)
x) Emitter Turn-off thyristors (ETOs)
Power BJT, MOSFET and IGBT has the
transistor structure whereas GTO, FCT,
MCT, IGCT, MTO and ETO has the thyristor
structure.
The amplifying gate permits high dynamic
characteristics with a typical dv/dt of 1000
1.7.8 LIGHT-ACTIVATED SILICON- V/µs and di/dt of 500 A/µs and simplifies
CONTROLLED RECTIFIERS (LASCR) the circuit design by reducing or

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 minimizing dv/dt protection circuits di/dt 3) TRIAC (Bidirectional triode thyristor)
limiting inductor.

Power devices, their characteristics and

symbolic representation

1) SCR (Silicon controlled rectifier)

V-I Characteristics

V-I Characteristics

4) SUS (Silicon unilateral switch)

2) DIAC (Bidirectional diode thyristor

V-I Characteristics

V-I Characteristics
5) SCS (Silicon controlled switch)

V-I Characteristics

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 Ia 8) LASCS (Light activated SCS)

Va
Va

Ia

6) SBS (Silicon bilateral switch) V-I Characteristics

Ia

Va
Va
V-I Characteristics

Ia

9) PUT (Programmable unijunction

transistor)

7) LASCR (Light activated SCR)

V-I Characteristics
Ia

Va
Va
V-I Characteristics

Ia

10) RCT (Reverse conducting thyristor)

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 V-I Characteristics 13)IGBT (Insulated Gate Bipolar
Junction Transistor)

V-I Characteristics

11) BJT (Bipolar junction Transistor)

V-I Characteristics

14)GTO (Gate-turn-off thyristors)

V-I Characteristics
12)N-channel MOSFET (Metal Oxide
Field Effect Transistor)

V-I Characteristics
15) SIT (Static Induction Transistor)

V-I Characteristics

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 18) FCT (Field Controlled Thyristor)

16) SITH (Static Induction Transistor) V-I Characteristics

V-I Characteristics

Maximum ratings of power

semiconductor devices

1. Diode

Voltage/current ratings :
5000 V/5000 A
Upper operating Freq. (kHz): 1.0
17)N-MCT (N-MOS-Controlled Thyristor) 2. Thyristors

a) SCR

Voltage/current ratings :
7000 V / 5000 A
V-I Characteristics
Upper operating Freq. (kHz): 1.0

b) LASCR

Voltage/current ratings :
6000 V / 3000 A
Upper operating Freq. (kHz): 1.0

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 c) ASCR/RCT

Voltage/current ratings :
2500 V / 400 A Voltage/current ratings :
Upper operating Freq. (kHz): 2.0 1400 V / 400 A
Upper operating Freq. (kHz): 10.0
d) GTO
b) MOSFET(n-channel)

Voltage/current ratings :
5000 V / 3000 A
Upper operating Freq. (kHz): 2.0 Voltage/current ratings :
1000 V / 50A
e) SITH Upper operating Freq. (kHz): 100.0

c) SIT

Voltage/current ratings :
2500 V / 500 A
Upper operating Freq. (kHz): 100.0

f) MCT Voltage/current ratings :

1200 V / 300 A
Upper operating Freq. (kHz): 100.0

d) IGBT

Voltage/current ratings :
1200 V / 40 A Voltage/current ratings :
Upper operating Freq. (kHz): 20.0 1200 V / 500 A
Upper operating Freq. (kHz): 50.0
g) Triac

Voltage/current ratings :
1200 V / 1000 A
Upper operating Freq. (kHz): 0.50

3) Transistors

a) BJT

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 GATE QUESTIONS

Q.1 Figure shows MOSFET with an integral Q.3 A bipolar junction transistor (BJT) is
body diode. It is employed as a power used as a power control switch by
switching device in the ON and OFF biasing it in the cut-off region (OFF
states through appropriate control. state) or in the saturation region (ON
The ON and OFF states of the switch state). In the ON state, for the BJT
are given on the VDS − Is plane by a) both the base-emitter and base-
collector junctions are reverse
biased
b) the base-emitter junction is
reverse biased, and the base-
collector junction is forward
biased
c) the base -emitter junction is
forward biased, and the base-
collector junction is reverse biased
a) b)
d) both the base-emitter and base-
collector junctions are forward
biased
[GATE-2004]
c) d)
[GATE-2003]
Q.4 A MOSFFET rated for 10A carries a
periodic current as shown in figure.
Q.2 Figure shows a thyristor with the
The ON state resistance of the
standard terminations of anode (A),
MOSFET is 0.15Ω . The average ON
cathode (K), gate (G) and the different
state loss in the MOSET is
junctions named J1, J2 and J3. When
the thyristor is turned on and
conducting

a) 33.8 W b) 15.0 W
c) 7.5 W d) 3.8 W
[GATE-2004]

Q.5 The conduction loss versus device

a) J1 and J2 are forward biased and
current characteristic of a power
J3 is reverse biased
MOSFET is best approximated by
b) J1 and J3 are forward biased and
a) a parabola
J2 is reverse biased
b) a straight line
c) J1 is forward biased and J2 and J3
c) a rectangular hyperbola
are reverse biased
d) an exponentially decaying
d) J, J2 and J3 are all forward biased
function
[GATE-2003]
[GATE-2005]

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.6 The figure shows the voltage across a a) Only 1 b) 1 and 2
power semiconductor device and the c) 1 and 3 d) 3 and 4
current through the device during a [GATE-2005]
switching transition. Whether the
transition is a turn ON transition or a Q.8 A voltage commutation circuit is
turn OFF transition? What is the shown in figure. If the turn off time of
energy lost during the transition? the SCRs is 50μ sec and a safety
margin of 2 is considered, what will be
the approximate minimum value of
capacitor required for proper
commutation?

VI
a) Turn ON, ( t1 + t 2 )
2
b) Turn OFF, VI ( t1 + t 2 )
c) Turn ON, VI ( t1 + t 2 ) a) 2.88μF b) 1.44μF
VI c) 0.91μF d) 0.72μF
d) Turn OFF, ( t1 + t 2 ) [GATE-2006]
2
[GATE-2005]
Q.9 An SCR having a turn ON time of
Q.7 An electronics switch S is required to 5μ sec , latching current of 50 mA and
block voltage of either polarity during holding current of 40 mA is triggered
its OFF state as shown in the figure by a short duration pulse and is used
(a). This switch is required to conduct in the circuit shown in figure. The
in only one direction its ON state as minimum pulse width required to turn
shown in the figure (b). the SCR ON will be

a) 251 µsec b) 150 µsec

c) 100 µsec d) 5 µsec
Which of the following are valid [GATE-2006]
realizations of the switch S? Q.10 The circuit in the figure is a current
commutated dc-dc chopper where,
a) ThM is the main SCR and ThAUX is the
auxiliary SCR. The load current is
constant at 10 A. ThM is ON. ThAUX is
trigged at t = 0. ThM is turned OFF
b) between.

c)

d)

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 a) 0μs < t ≤ 25μs
b) 25μs < t ≤ 50μs
c) 50μs < t ≤ 75μs
d) 75μs < t ≤ 100μs
[GATE-2007] The diode conducts for
a) 90° b) 180°
Common Data for Questions 11 & 12 c) 270° d) 360°
A 1:1 Pulse transformer (PT) is used to trigger [GATE-2007]
the SCR in the figure. The SCR is rated at 1.5
kV, 250 A with I L = 250mA , I H = 150mA Q.14 An SCR is considered to be a semi-
, and IGmax = 150mA, with I L = 250mA controlled device because
, IGmin = 100mA . The SCR is connected to an a) it can be turned OFF but not ON
with a gate pulse
inductive load, where L = 150 mH in series
b) it conducts only during one half-
with a small resistance and the supply voltage
cycle of an alternating current
is 200V dc. The forward drops of all
wave
transistors/diodes and gate-cathode
c) it can be turned ON but not OFF
junctions during ON state are 1.0 V
with a gate pulse
d) it can be turned ON only during
Q.11 The resistance R should be
one half-cycle of an alternating
voltage wave
[GATE-2009]
Q.15 Match the switch arrangements on
the top row to the steady-state V-I
characteristics on the lower row. The
steady state operating points are
shown by large black dots.

a) 4.7 kΩ b) 470 kΩ
c) 47 Ω d) 4.7 Ω
[GATE-2007]

Q.12 The minimum approximate volt-

second rating of the pulse
transformer suitable for triggering the
SCR should be: (Volt-second rating is
the maximum of product of the
voltage and the width of the pulse
that may be applied)
a) 2000μV − s. b) 200μV − s
c) 20μV − s d) 2μV − s
[GATE-2007] a) A − i, B − ii, C − iii, D − iv
b) A − ii, B − iv, C − i, D − iii
Q.13 In the circuit of adjacent figure the c) A − iv, B − iii, C − i, D − ii
diode connects the ac source to a
d) A − iv, B − iii, C − ii, D − i
pure inductance L.
[GATE-2009]

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.16 The circuit shows an ideal diode
connected to a pure inductor and is
connected to a purely sinusoidal 50 Hz
voltage source.

If the maximum value of load current

is 10 A, then the maximum current
through the main (M) and auxiliary (A)
thyristors will be
Under ideal conditions the current
= =
a) i M max 12A andi A max 10A
waveform through the inductor will
look like = =
b) i M max 12A andi A max 2A
= =
c) i M max 10A andi A max 12A
= =
d) i M max 10A andi A max 8A
[GATE-2011]
a)
Q.19 The typical ratio of latching current to
holding current in a 20 thyristor is
a) 5.0 b) 2.0
c) 1.0 d) 0.5
b) [GATE-2012]

Q.20 Figure shows four electronic switches

(i), (ii), (iii) and (iv). Which of the
c)
switches can block voltages of either
polarity (applied between terminals
‘a’ and ‘b’) when the active device is
in the OFF state ?
d)
[GATE-2009]

Q.17 Circuit turn-off time of an SCR is

defined as the time
a) Taken by the SCR to turn off
b) Required for the SCR current to
become zero
c) For which the SCR is reverse
biased by the commutation circuit
d) For which the SCR is reverse (A) (i), (ii) and (iii)
biased to reduce its current below (B) (ii), (iii) and (iv)
the holding current
(C) (ii) and (iii)
[GATE-2011]
(D) (i) and (iv)
Q.18 A voltage commuted chopper circuit, [GATE-2014]
operated at 500 Hz, is shown below:

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 Q.21 The circuit shown in meant to supply
a resistive load RL from two separate
DC voltage sources. The switches S1
and S2 are controlled so that only one
of them is ON at any instant. S1 is
turned on for 0.2 ms and S2 is turned
on for 0.3 ms in a 0.5 ms switching
cycle time period. Assuming
continuous conduction of the inductor
current and negligible ripple on the
capacitor voltage, the output voltage
V0 (in Volt) across RL is______

[GATE-2015]
[GATE-2016]

Q.22 A steady dc current of 100 A is

flowing through a power module (S, Q.23 The voltage (Vs) across and the
D) as shown in Figure (a).
current (Is) through a
The V-I characteristics of the IGBT
semiconductor switch during a turn-
(S) and the diode (D) are shown in
ON transition are shown in figure.
Figures (b) and (c),respectively y.
The energy dissipated during the
The conduction power loss in the
turn-ON transition, in mJ is_______.
power module (S, D), in watts, is .

[GATE-2016]

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.24 For the power semiconductor devices Q.25 Four power semiconductor devices
IGBT, MOSFET, Diode and Thyristor, are shown in the figure along with
which one of the following statement their relevant terminals. The device (s)
is TRUE? that can carry dc current continuously
(A) All the four are majority carrier in the direction shown when gated
devices. appropriately is (are)
(B) All the four are minority carrier
devices.
(C) IGBT and MOSFET are majority
carrier devices, whereas Diode and
Thyristor and minority carrier devices.
(D) MOSFET is majority carrier device,
whereas IGBT, Diode and Thyristor (A) Triac only
are minority carrier devices. (B) Triac and MOSFET
[GATE-2017] (C) Triac and GTO
(D) Thyristor and triac
[GATE-2018]

ANSWER KEY:
1 2 3 4 5 6 7 8 9 10 11 12 13 14
(b) (b) (d) (c) (a) (a) (c) (a) (b) (c) (c) (a) (d) (c)
15 16 17 18 19 20 21 22 23 24 25
(c) (c) (c) (a) (b) (c) 7 170 75 (d) (b)

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 EXPLANATIONS
Q.1 (b) conditions, therefore base-collector
junction (CBJ) is also forward biased.

Q.4 (c)
Rated current during on state I = 10
ON state resistance
R ON = 0.15Ω MOSFET is ON
When reverse current flows through
diode D. 0 < ωt < π
So, Is <0andVDS =0 ⇒0<t <π/ω
MOSFET is OFF
When MOSFET is in ON state
π < ωt < 2π
Is > 0andVDS = 0 ⇒ π / ω < t < 2π / ω
When MOSFET is in OFF state Average ON state Loss,
=Is 0andVDS > 0 1
π/ω
Pavg = ∫
( 2π / ω ) 0
I 2 R ON dt

ω π
= × I 2 R ON ×
2π ω
I R ON 10 × 0.15
2 2
= = = 7.5W
2 2

Q.2 (b) Q.5 (a)

Reverse Blocking Mode: Cathode is Let I – device current
more positive with respect to anode. R ON = ON state resistance of power
Junctions J1 , J 3 are seen to be reverse MOSFET
biased whereas Junction J 2 is Conduction loss= P= I 2 R ON
forward biased. Therefore, conditionless versus device
Forward Blocking Mode & Forward current characteristic can be
Conduction Mode: Anode is positive best approximated by a parabola.
with respect to the cathode.
Junctions J1 , J 3 are forward biased but Q.6 (a)
Junction J 2 is reverse biased. During interval t 2 , voltage starts
decreasing and becomes zero and
Q.3 (d) current starts increasing and becomes
constant (I), so transition is turn on.
V=
CB VCE − VDE …(i)
Under saturated state, VBES is greater
than VCES this means base-emitter
junction (BEJ) is forward biased.
Further eq. (i) shows that VCB is
negative under saturated
During t1 interval,

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 Power loss = vi
= =
E1 Energy loss ∫vidt = V ∫idt
V is constant during this period v= V
∫idt represents area under i-t curve When the reverse voltage is applied
1 across the devices (2) and (4), current
∫idt = 2 × I × t1 flows through diode indicated with D.
1 So, these devices do not satisfy the
=
E1 V= ∫idt 2 VIt1 …(i) requirements.
During t 2 interval,
Power loss = vi
E 2 = Energy loss
Transistor blocks voltage in either
= ∫=
vidt I ∫vdt
polarity until base signal is applied.
i is constant during this period i =I
Once the base signal is applied, the
∫vdt represents are under v-t curve device conducts in forward direction.
1
∫vdt = 2 VIt 2 Q.8 (a)
1
= ∫vdt
E 2 I=
2
VIt 2 …(ii)
Total energy lost during the transition
E= E1 + E 2
1 1
= VIt1 + VIt 2 .
2 2
In this type of commutation, a
Q.7 (c) thyristor carrying load current is
commutated by transferring its load
1. Switch s blocks voltage of both current to another incoming thyristor.
polarity, it means s can block Firing of SCR Th1 commutates Th2
forward as well as reverse voltage. and subsequently, firing of SCR Th2
would turn off Th1 .
Circuit turn-off time t c1forTh1
2. Current through s, flows in
t c1 = R1C In2
forward direction only.
and Circuit turn-off time t c2 for Th2
t c2 = R 2 C In2
Thyristor blocks voltage in either as R=
1 R=
2 50Ω
polarity until gate is triggered. Once = t=
t c2 R1C ln ln 2
the thyristor is trigged current flows in
c1

Safety margin = 2
forward direction.
So, R1C ln2 = 2t c1
2 × 50 ×10−6
=C = 2.88μF
50 × ln ln 2

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 Q.9 (b) = −I P sin ω0 t
 π 
After half a cycle of i c  t1 =  ;
 ω0 
ic = 0, v c =
−Vs andi T1 = I0 .Asi c tends
to reverse, Thaux is turned off. When
v c = −Vs , right hand plate has
Current through 5kΩ resistor
positive polarity, resonant current ic
V 100
=
iR = now builds up through C, L, D
R 2 5 ×103
andTh m . As this current ic grows
= 20mA = 0.02A
Current through inductor opposite to forward thyristor current
of Th m , net forward current im =
i L=
V
R1
(
= 1 − e − R1 /Lt ) I0 − ic begins to decrease. Finally
when ic in the reversed direction
=
100
20
(
1 − e 20/0.5t ) attains the value I0 , im is reduced to
Zero and Th m is turned off.
= 5 1 − e −40t( ) i m = I0 − i c = I0 − I p sin ω0 ∆t = 0
Anode current
1 I 
i= iR + iL ∆t = sin −1  0 
a
ω0 I 
= 0.02 + 5 (1 − e −40t )  p
So, Thm is turned off between
Let minimum pulse width is T t1 < t < t1 + ∆t
To turn on i a ≥ latching current
π
⇒ 0.02 + 5 (1 − e −40t ) t1 = π LC
=
ω0
= 50mA
= 0.5 =×π 10 × 25.28μ sec
T = 150μ sec
= 50μ sec
Q.10 (c)
Q.11 (c)

−
=
At t 0= , v c Vs ,
= =
i c 0andi T1 I0
At t = 0, Th aux is triggered, a resonant
When the pulses are applied to the
current ic designs to flow from C
base of the transistor. Transistor
through Th aux , L and back to C. operates in ON state.
This resonant current is given by So, the forward voltage drop in
C transistor VCE = 1V .
i c = −Vs sin ω0 t
L V1 = 10 − VCE = 10 − 1 = 9V

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 1 ≈ 2000μs
V=
2 V1  = V= 1 9V
1
[turn ratio 1 : 1] Q.13 (d)
D1 is forward biased and voltage drop Vm
=I (1 − cos ωt )
in diode VD1 = 1V ωL
D2 is reversed biased and acts as open Q.14 (c)
circuit. During one half cycle, SCR can be in
Capacitor behaves as open circuit for forward blocking mode and by
dc voltage. Forward voltage drop of applying gate pulse, the SCR operates
gate cathode junction in forward conduction mode (ON
Vgk = 1V state)
Voltage drop across resistor R, But SCR can be turned off by applying
VR =V2 − VD1 − Vgk gate pulse.

= 9 − 1 − 1 = 7V Q.15 (c)
To ensure turn-ON of SCR, Device-A
VR 7
R == ≈ 47Ω
Ig(max) 150mA
When diode is forward biased (ON
Q.12 (a)
state), =
Vs 0,is > 0
Diode is reverse biased (OFF state),
Vs < 0,is =
0

Forward voltage drop of SCR during Device-B

ON-state VT = 1V
Ldi a
E− − Ri a − VT = 0
dt
di When thyristor is in reverse blocking
⇒ 200 − 0.15 a − i a − 1 =0 mode, Vs < 0, is = 0
dt
thyristor is in forward blocking,
⇒ i=
a (
199 1 − e − t /0.15 ) Vs > 0,is =0
Gate pulse width required = time thristor is in forward conduction
taken by ia to rise upto IL = T mode,
IL = ia =
Vs 0,is > 0
⇒ 250 ×10−3
= 199 (1 − e − T/0.15 )
T = 188.56μs
Width of the pulse= T= 188.56μs
Magnitude of voltage= V= 10V Device-C
Voltage second rating of PT
VT= T= 10 ×188.56μs = 1885.6μs

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 During negative half cycle of the
T
source voltage, ≤ t ≤ T , current
2
decreases and energy stored in the
When the device is ON, inductor is delivered to source.
=
Vs 0,is > 0
The device is OFF, Vs > 0, Q.17 (c)
is = 0 The turn-off time provided to the
thyristor by a circuit is called circuit
turn-off time. It is defined as the time
between the instant anode current
becomes zero and the instant reverse
voltage due to the circuit reaches
Device-D zero.

Q.18 (a)
When main thyristor (M) is turned on,
an oscillatory current in the circuit C,
M, L and diode is set up and it is given
by
Reverse current can flow through the
C
diode so is < 0andVs =0 i c ( t ) = Vs
sin ω0 t
During ON state of the device L
is >0andVs =0 Peak value of current through
capacitor
During OFF state of the device,
= = C
is 0andV s 0 i P = Vs
L
0.1×10−6
= 200 ×
1×10−3
= 2A
Current through main thyristor
i m= i 0 + i c ( t )
= i 0 + i P sin ω0 t
Q.16 (c)
Frequency of the voltage source, So, maximum value of
f = 50Hz I m= i 0 + i P
Time period, = 10 + 2
1 1 = 12A
T= = = 20ms .
f 50 When auxiliary thyristor (A) is turned
During positive half cycle of the on, capacitor voltage applies a reverse
T voltage across main thyristor and
source voltage, 0 < t < , energy is main thyristor is turned off. The load
2
stored in the inductor and current current is now carried by C and
increases. auxiliary thyristor.
Current through auxiliary thyristor
iA = i0
maximum value of

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= =
i A maximum value ofI0 10A . When Vb > Va , the SCR is OFF.
So, the switch can block voltages of
Q.19 (b) either polarity when the active device
For medium power thyristors of rating (SCR)
6A to 60 A the ratio of the latching is in the OFF state.
current to holding current is 1.5 to2.

Q.20 (c) Switch (iv):

We have to check all the given
switches whether it can block voltages
of either polarity when the active
device is in the OFF state. When Va > Vb , diode is OFF.
Switch (i): When Vb > Va , SCR is OFF.
So, the switch can not block voltages
of either polarity when the active
device (SCR or diode) is in the OFF
state.
When Va > Vb ; diode will be OFF, but
Thus, the switches (ii) and (iii) only
the transistor is ON.
can block voltage of either polarity,
When Vb > Va ; transistor is OFF, but
when active device is OFF.
diode will be ON.
So, the switch can not block voltages
Q.21 (7)
of either polarity when the active
device(diode or transistor) is in the Given that only one of the two
OFF state. switches is ON at any instant.
For 0.2 ms, S1 is ON and for 0.3 ms S2
Switch (ii) : is ON. Here, we analyze the given
circuit for the two cases:

When Va > Vb , both diode and CASE 1: For 0.2 ms

transistor are ON. For this case, the circuit becomes as
When Vb > Va both diode and
transistor are OFF.
So, the switch can block voltages of
either polarity when the active
devices (diode and transistor) are in
the OFF state.

So, the voltage 10 V appears across

Switch (iii):
load resistor RL for 0.2 ms cycle.

When Va > Vb , the SCR is ON. CASE 2 : For 0.3 ms Cycle

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 For this case, the circuit becomes as majority carries only. In Diode,
Thyristor and IGBT, current flow is due
to both majority and minority carries.

Q.25 (a)

(i)

So, the voltage 5 V appears across

load resistor RL for 0.3 ms cycle.
Hence, we get the average output
voltage as
10 × 0.2 + 5 × 0.3
V0 =
0.5 An SCR allows only anode to cathode
=7V current. Hence the given current can
not flow through SCR.
Q.22 (170)
(ii)
Sol:
When Diode is conducting
dv
= 0.01
d1
V = 0.01 × 100 = 1V
Conduction losses = 1 × 100 + 0.7 × 100
Total losses = 100 + 70 = 170W A triac is a bidirectional current flow
Ans : 170 W device. Hence the given current can
flow from terminal 2 MT to terminal 1
Q.23 (75) MT .

T1 T2
(iii)
Energy = ∫ V ⋅ idt + ∫ V ⋅ idt
0 0

1  1 
= V  IT1  + I  VT2 
2  2 
150 
= 600  × 1 ×10−6 
 2 
1  A GTO is a gate turn off thyristor. It is
+ 100  × 600 × 1 × 10−6 
2  a unidirectional current flow device. It
Energy = 75 mJ allows only anode to cathode current.
Hence the given current can not flow
Q.24 (d)
through GTO.
In MOSFET flow of current is due to

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 (iv)

Note : A MOSFET with body diode is a

by directional current conduction device.
But here the body diode is not mentioned.

The given MOSFET is a D-MOSFET. It

allows only drain to source current.
Hence the given current can not flow
through MOSFET.

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 2 PHASE CONTROLLED RECTIFIERS

2.1 1-φ HALF WAVE RECTIFIER V α<θ<π 

As V0 =  s 
0 otherwise 
To discuss the rectifier action φ using
Thyristor, Thyristor & Diode are 0 α<θ<π
⇒ VT =  
considered to be ideal i.e. Vs otherwise 
• Voltage drop across them is zero •
Current through thyristor iT=i0 reduce
• No reverse current under reverse to zero at θ = ωt = π, & after θ = π, T
biased conditions φ remains reverse biased, upto θ = wt =
• Holding current is zero. 2π, so curriculum off time (provided by
circuit to SCR) tc given by
ωt c = π ⇒ t c = π / ω hence sufficient tc
is given so Thyristor with slow turn off
time (50-100μs) can be used ie
converter grade SCR.
• Average o/p voltage :
π
1 Vm
= V0 ∫
2π α
Vm sin θdv=
2π
(1 + cos α)

• V0 can be controlled by controlling ‘α’

or by centralling the phase (phase
difference between i/p & o/p) hence it
is called as “phase controlled Rectifier”
as well as by controlling ‘α’, the action
of T as a rectifier can be controlled so it
is named as (silicon controlled rectifier)
• Rms value of o/p voltage
1 1
 1 2π 2  2  1 π 2 2
Vor =  = ∫ ∫ θ θ
2
V dv   V sin d 
 2π 0  2π α
0 m
 
1
Vm  sin 2α  2
=Vor ( π − α ) +
2 z  2 
• In +ve half of the cycle no i0 flows SCR is
• Supply current is = i0
fired at an angle α (firing angle) so V
Thyristor T start conducting at θ = α. If so rms current Ior = or
T were replaced by a diode then if R
• Supply VA (Input VA) = Supply voltage
would start conducting at θ = 0
(rms). Supply current (rms)=VS Ior
• When T is conducting i.e. α<θ<π , V0 = Vs
• Input power factor
and V0 = 0 otherwise
Power delivered to load
•
V
As load is purely resistance so i 0 = 0
PF =
R Input VA
1
so i0& V0 have the same waveform. 1  sin 2α  2
• If VT is the drop across SCR, =
PF  (π − α) +
2π  2 
VT = VS – V0

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 2.1.1 WITH RL-LOAD Vm Vm −R
( β−α )
= 0 sin(β − ϕ) − sin(α − ϕ)e wL
Z Z
β is given by equation β - α = γ
Conduction angle
• avg V0,
2π β
1 1
2π ∫0 2π ∫α
= V0 = V0 d ω t Vm sin θdθ

VM
=
⇒ V0 [cos α − cos β]
2π
• rms load voltage
1
1 β 2
=Vor  ∫ V02 dθ 
 2π α 
1
Vm  1 2
⇒=
Vor
2 π (β − α) − 2 {sin 2β − sin 2α}
 

•
T starts conducting at wt = α so current
i0 state flowing from figure.
Ldi 0
=
V o Ri 0 +
dt
let V0 = Vs when T-ON
di
so L 0 + R = Vm sin wt
dt
Solution to this equation
[given io = 0 at wt = α]
R
Vm Vm − (wt −α )
=i0 sin (wt-ϕ)- sin(α − ϕ)e wL
z Z
VT = (VS – VR – VL) 2.1.2 WITH FREEWHEELING DIODE
di
as VL = L 0 • In figure it is seen that load current io
dt
waveform is discontinuous as well as V0
= -ve from ωt = π to ωt = β so average V0
is less as well as circuit turn of time
π−β
tL = is less. The performance of
ω
HW convertor can be improved by
using a diode across load.
• Let i0 = 0 at ωt = β (extinction angle) • During ωt=α to π, T-ON so V0 = Vs = +ve
from equation hence FD remains off ; hence

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 di 0 2.2 1-φ FULL WAVE BRIDGE
V0 = Vm sin ωt = Ri0 + L
dt CONVERTER
Let at
ωt =α,i 0 =I0 It is categorised mainly into two types.
R α
Vm  V  −  t−  2.2.1 1-φ FULL CONVERTER
⇒ i0
= sin(ωt − ϕ) +  I0 − m sin(α − d)  e L  ω 
Z  Z 
α≤ωt ≤π It uses all the four devices, thyristors
• A verage V0;
1
π
Vm • T1T2 are FB during the half cycle of Vs&
Vo= ∫
2z α
Vm sin θdQ=
2π
(1 + cos α) T3T4, when Vs = -ve, due to the presence
of E (in load), Thyristor will be forward
π biased when Vs≥ E, hence firing angle
• With FD, circuit turn off time tc =
ω should be such that
• Without FD, in figure Vs(α) = Vm sin α≥ E
π ≤ ωt ≤ π; V0 & i 0 both +ve⇒powerP01 +ve  E 
⇒ α ≥ sin −1   Minimum firing angle
p ≤ ωt ≤ β; V0 = − ve,i 0 =+ ve ⇒ P02 =− ve  Vm 
So net power delivered to load P01 − P02 . • During π≤π + α, T1T2 conducts due to
energy stored in L returned to the source. the voltage reversal across L.
• With FD; I0 flows through R, during • average V0,
π+α
whole cycle, hence energy stored in 1 2Vm
inductance is dessipoted to load.
=
V0
π ∂∫ Vm sin=
θdv
π
cos α
• Net power delivered to load is more
From equation, if α> 90o, V0 = -ve
with FD but supply VA remains almost
• If α = 90o& E reversed in figure, it is
same in both the cases hence, input pf is
better using FD. seen V0 = -ve, i0 = +ve π≤ wt ≤π+α
hence power takes place from E to Vs
• So using FD, input pf is improved, i0
(as V0i0 = -ve) so due to this power flow
becomes almost continuous.
from dc → ac this circuit act an invertor
b’ coz it is line commulated hence called
as “Line Commutated Invertor”.
Each Thyristor is subjected to PIV of Vm.
Quadrant of operation can be
represented as

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 vab vba
vS
E
ωt

T1 T2 T1 T2
vab vba
v0
α Vm Vo ωt
0
iT1 iT2 iT1 iT2
i0
T1D1 T2D2 T1D1 T2D2
ωt

iS (π+α) 2π (3π+α)
4π
α π (2π+α)3π ωt

vT1
ωtc
O
-Vm ωt

ωt

 E 
Firing angle α: α ≥ sin −1  
 Vm 
From figure
• Hence it can also be referred as Two Vs = Vab& Vba = -Vs
quadrant converter, i0 = +ve but V0 can • T1D1 are FB during +ve half cycle of Vs R
be made +ve or –ve by varying ‘α’. & T2D2 are FB during –ve half cycle of Vs
• V0 = +ve only as FD is connected, so no
energy feedback to the source from the
2.2.2 1-φ SEMICONVERTER : load.
Average V0 :
• Two thyristors T1, T2& two Diodes D1, 1
π
Vm
D2 alongwith FD [freewheeling Diode]. = V0
πα∫ Vm sin =
θdθ
π
(1 + cos α)

π−α
Circuit turn off time t c =
w
Quadrant of operation

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 • So in fig, only one diode A1 or B1 or C1
2.3 3 - φ CONVERTER will conduct at a time corresponding to
whom, the supply voltage Va or Vb or Vc
3 - φ - HW CONVERTER USING DIODES: is most +ve. See waveform fig
• Similarly in figure, only one diode A2 or
B2 or C2 will conduct at a time
corresponding to whom, the supply
voltage Va or Vb or Vc is most –ve. See
waveform
If the two circuit of fig are combined with
common neutral see fig only two [one
from A1, B1, C1& another from A2, B2, C2]
diode conduct at a time & o/p voltage will
be difference of two provided in fig

Common cathode arrangement

• In fig Consider the instant when Va& Vb

are +ve but Va> Vb.
• In fig Va> Vb, A1 is ON then V0 = Va so Average V0 in 3φ Hw rectifier by given by
voltage across B, is V0 = Vb – Va = -ve so V0 (HW) =
3 6
Vph
B1 will not conduct. 2π

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 Average V0 for 3φ - six pulse rectifier(ie • V0 = +ve so only single quadrant
3 2 operation.
3φFω) is given by V0 = Vt
π
Where Vt→ rms line to line voltage.

2.3.1 3-φ FULL CONVERTER

Average V0,
3 3 2V1
=
V0 Vml (1 + cos=
α) (1 + cos α)
2π 2π
Quadrant operation

3Vml
Average =
V0 ; V0 cos α Advantages of 3φ Converter or 1 - φ
π Converter:
=
3 2V1
cos α − −(2.10) (i) In 3φ converter, the ripple frequency in
π V0 is high so filter design become easier.
Where Vml = 2V1 maximum L-L Voltage (ii) Load current waveform is more
continuous.
From fig. α = 90o, V0 = -ve but i0 = +ve so
V0i0 = -ve hence power is transferred from
2.4 DUAL CONVERTER
dc so [if E is reversed] to ac source, so this
act as “Line commutated Inverter”.
To obtained four quadrant operation see fig
2.15 (a) two full converter (1-φ or 3-φ) are
connected back to back across the load.

2.3.2 3-φ SEMICONVERTER

• i0 is made to be continuous (almost)
using FD

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 So to avoid circulating current α1+ α2
= 1800
It is seen that even when α1+ α2 = 1800,
there is circulating current b’coz, with the
condition α1+ α2 = 1800, the average
voltages of the two converters V01& V02 are
equal but their instantaneous values still
not same.
Further to reduce the circuiting current,
Interphase reactor is introduced (function
of this reactor is some as discussed in
parallel operation of thyrister) see fig. 2.17

2.4.1 IDEAL DUAL CONVERTER

2.5 PERFORMANCE PARAMETERS

The output dc power,

Pdc = VdcIdc
From fig, The output ac power
V0 = V01 = -V02 Pac = VrmsIrms
as we know V01 = Vmax Cos α1 P
& V02 = Vmax Cos α2 η = dc
Pac
2Vml
where Vmax = (1 − ϕ) The output voltage can be considered as
π composed of two components: (1) the dc
3Vml value, and (2) the ac component or ripple.
&= Vmax (3 − ϕ)
π The effective (rms) value of the ac
hence Vmax cos α1 = -Vmax cos α2 cos α1 component of output voltage is
= -cos α2 =
Vac 2
Vrms − Vdc2
= cos (180-α2)or cos (180+α2)
The form factor, which is a measure of the
⇒α1 = 180-α2 or 180+α2
V
as α> 180 shape of output voltage, is FF = rms
hence α1 + α2 = 1800 Vdc

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 The ripple factor, which is a measure of the 3. Displacement factor DF is often known
V as displacement power factor (DPF).
ripple content, is defined as RF = aC
Vdc 4. An ideal rectifier should have η = 100%,
the ripple factor can be expressed as Vac = 0, RF = 0, TUF = 1, HF = THD = 0,
2
and PF = DPF = 1.
V 
=  rms  −=
RF 1 FF2 − 1
Example: The rectifier in Figure a has a
 Vdc 
purely resistive load of R.Determine (a) the
The transformer utilization factor is
efficiency, (b) the FF, (c) the RF, (d) the
defined as
TUF, (e) the PIV of diode D1, (f) the CF of
P
TUF = dC the input current, and (g) input PF.
Vs Is
If φ is the angle between the fundamental
components of the input current and
voltage, φ is called the displacement angle.
The displacement factor is defined as
DF = cos φ
The harmonic factor (HF) of the input
current is defined as
1/2
 I 2 − Is12   I 
1/2
 2

=HF  s 2=    
s
− 1
 Is1   Is1  
Where Is1 is the fundamental component of
the input current Is. Both Is1 and Is are
expressed here in rms. The input power
factor (PF) is defined as
Vs Is1 I
=PF =
cos ϕ s1 cos ϕ
Vs Is Is
Crest factor (CF), which is a measure of the
peak input current Is(peak) as compared with
its rms value Is, is often of interest to
specify the peak current ratings of devices
and components. CF of the input current is
defined by
Is(peak )
CF = Solution: The average output Vdc is
Is
defined as
Notes : 1 T
1. HF is a measure of the distortion of a Vdc = ∫ v L (t)dt
waveform and is also known as total T 0
harmonic distortion (THD). 1 T/2 −Vm  ωT 
2. If the input current is is purely
=Vdc
T ∫0
=
v m sin ωt dt
ωT 
 cos
2
− 1

sinusoidal, Is1 = Is and the power factor However, the frequency of the source is f
PF equals the displacement factor DF. = 1/T and ω = 2πf. Thus
The displacement angle φ becomes the Vm
V= = 0.318Vm
impedance angle φ = tan (ωL/R) for an
-1 dc
π
RL load. Vdc 0.318Vm
=Idc =
R R

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 The ms value of a periodic waveform is If the rectifier in a has a purely resistive
defined as load of R, determine (a) the efficiency, (b)
1 T 2 
1/2 the FF, (c) the RF, (d) the TUF, (e) the PIV
Vrms =  ∫ v L (t)dt  of diode D1, and (f) the CF of the input
T 0  current.
For a sinusoidal voltage of v0(t) = vm sin
ωt for 0 ≤ t ≤ T/2, the rms value of the
output voltage is
1/2
1 T  Vm
Vrms =  ∫ (Vm sin ωt) dt  = =
2
0.5Vm
 0
T  2
Vrms 0.5Vm
=
I rms =
R R
Pdc = (0.318Vm)2/R, and, Pac= (0.5Vm)2/R.

a. the efficiency η = (0.318Vm)2/(0.5Vm)2

= 40.5%. Solution
b. the FF = 0.5 Vm/0.318Vm = 1.57 or The average output voltage is
157%. 2Vm
=
Vdc = 0.6366Vm
c. the RF = 1.57 2 − 1 = 1.21 or 121% π
d. The rms voltage of the transformer And the average load current is
secondary is Vdc 0.6366Vm
1/2
=
Idc =
1 T  R R
= Vs  ∫ (Vm sin ωt) 2 dt  The rms value of the output voltage is
T 0  1/2
 2
T/2

= =
Vm
0.707Vm = Vrms  ∫ (Vm sin ωt) dt  2

2 T 0 
The rms value of the transformer = = Vm
0.707Vm
secondary current is the same as that of 2
the load. Pdc = (0.6366Vm)2/R, and from Eq. (3.2)Pac
Is =
0.5Vm = (0.707Vm)2/R
R
The volt-ampere rating (VA) of the a. the efficiency
transformer, VA = VsIs = 0.707Vm × η =(0.6366Vm)2/(0.707Vm)2= 81%.
0.5Vm/R. b. the form factor
TUF = Pdc/(VsIs) = 0.3182/(0.707 × 0.5) FF = 0.707Vm/0.6366Vm = 1.11.
= 0.286. c. the ripple factor RF
e. The peak reverse (or inverse) blocking = 1.112 − 1 = 0.482 or 48.2%
voltage PIV = Vm. d. The rms voltage of the transformer
f. Is(peak) = Vm/R and Is = 0.5Vm/ R. The secondary vs = Vm/ 2 = 0.707Vm. The
CF of the input current is CF = Is(peak)/Is= rms value of transformer secondary
1/0.5 = 2g. The input PF for a resistive current Is = 0.5Vm/R. The volt – ampere
load can be found from rating (VA) of the transformer, VA =
Pac 0.52 2VsIs = 2 × 0.707Vm × 0.5Vm/R.
=PF = = 0.707
VA 0.707 × 0.5 0.63662
=TUF = 0.5732 = 57.32%
2 × 0.707 × 0.5
Example e. The peak reverse blocking voltage, PIV
= 2Vm.

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 f. Is(peak) = Vm/R and Is = 0.707Vm/R. The 0.827 2
CF of the input current is = TUF = 0.6643
3 × 0.707 × 0.4854
CF = Is(peak)/Is= 1/0.707= 2 0.840682
=
g. The input PF for a resistive load can be PF = 0.6844
3 × 0.707 × 0.4854
found from
e. The peak inverse voltage of each diode
Pac 0.707 2 is equal to the peak value of the
=PF = = 0.707
VA 2 × 0.707 × 0.5 secondary line-to-line voltage. The line-
to-line voltage is 3 times the phase
Note voltage and thus PIV = 3 Vm.
1/TUF = 1/0.5732 = 1.75 signifies that the f. The average current through each diode
input transformer, if present, must be 1.75 is
times larger than that when it is used to 2 π /q 1 π
deliver power from a pure ac sinusoidal Id =
2π ∫0
I m cos ωt d(ωt) = I m sin
π q
voltage. The rectifier has an RF of 48.2%
and a rectification efficiency of 81%. For q = 3, Id = 0.2757Im.The average
current through each diode is Id = 30/3
Example = 10A and this gives the peak current as
A three-phase star rectifier has a purely Im = 10/0.2757 = 36.27 A.
resistive load with R ohms. Determine
(a) the efficiency, Example
(b) the FF, The full converter is connected to a 120 –V,
(c) the RF, 60-Hz supply. The load current Ia is
(d) the TUF factor, continuous and its ripple content is
(e) the PIV of each diode, and negligible. The turns ratio of the
(f) the peak current through a diode if the transformer is unity.
rectifier delivers Idc = 30 A at an output (a) Express the input current in a Fourier
voltage of Vdc = 140 V. series; determine the HF of the input
current, DF, and input PF.
Solution: For a three-phase rectifier q= 3 (b) If the delay angle is α = π / 3 , calculate
a. Vdc = 0.827Vm and Vdc, Vn, Vrms, HF, DF, and PF.
Idc = 0.827Vm/R.
Vrms = 0.84068 Vm and Solution:
Irms = 0.84068Vm/R. Pdc = (0.827Vm) /R;
2 a. The waveform for input current is and
Pac = (0.84068Vm)2/R; and the efficiency the instantaneous input current can be
(0.827Vm ) 2 expressed in a Fourier series as
= η = 96.77% ∞
is(t) = a0 + ∑ (an cos n ωt + bn sin n ωt )
(0.84068V ) 2 m
n =1, 2 ,....
b. the FF = 0.84068/0.827 = 1.0165 or where
101.65% 1 2 π+α
2π ∫α
c. the RF = 1.0165 − 1 = 0.1824
2 =a 0 is (t)d(ωt)
= 18.24%. 1  π+α
Ia d(ωt)  = 0
2 π+α
d. The rms voltage of the transformer =
2π   ∫α
I a d( ω t) − ∫ π+α 
secondary, Vs = Vm/ 2 = 0.707Vm. the 1 2 π+α
π ∫α
rms current of the transformer = an is (t) cos nωt d(ωt)
0.4854Vm
=
secondary, =
Is 0.4854I m
R 1  π+α
∫π+α Ia cos nωt d(ωt)
2 π+α

π  ∫α
0.4854Vm = I a cos n ω t d( ω t) −
VA = 3VsIs = 3 × 0.707Vm ×
R

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 4I and Vn = 0.5pu
= − a sin nα for n = 1,3,5,........
nπ Vm
= 0= for n 2, 4...... Vrms = = V= s 120V
2
1 π+α  Ia 
= bn ∫ i(t) sin nωt d(ωt) = =
π 
π α I s1 2 2 0.90032Ia

=  ∫ Ia sin nωt d(ωt) − ∫ Ia sin nωt d(ωt) 
1 π+α 2 π+α
and Is = I a
π  α π+α  1/2
4Ia  I  2 
= cos nα for n = 1,3,5,..... HF =  s  − 1 = 0.4834
nπ  Is1  
= 0= for n 2, 4,.....
or 48.34%
Because a 0 = 0, the input current can be written as
∞
ϕ1 = −α and DF = cos t(−α)
= is (t) ∑ 2In sin(nωt + ϕn )
n =1,3,5,... = cos = 0.5
−π
3
where I
−1 a n = PF s1 cos( = −α) 0.45(lagging)
ϕn =tan =−nα Is
bn
and φ n is the displacement angle of the Example
nth harmonic current. The rms value of The single-phase full converter of has a RL
the nth harmonic input current is load having L = 6.5 mH, R = 0.5 Ω , and E =
1 2 4Ia 2 2Ia 10 V. The input voltage is Vs =120 V at
Isn = (a n + b n2 )1/2 = = (rms) 60Hz. Determine
2 2nπ nπ
and the rms value of the fundamental (a) the load current ILo at ω t = α =600,
current is (b) the average thyristor current IA,
(c) the rms thyristor current IR,
2 2Ia (d) the rms output current Irms,
Is1 =
π (e) the average output current Idc, and
The rms value of the input current can (f) the critical delay angle α c
be calculated as
1/2
 ∞ 
Is =  ∑ Isn2 
 n =1,3,5,.... 
Is can also be determined directly from
1/2
 2 π+α 
=Is  ∫ Ia2 d(ω= t)  Ia
 2π α 
the HF is found as
1/2
 I  2 
HF=  s  − 1 = 0.483 or 48.3%
 Is1  
the DF is DF = cos φ1 = cos(- α )
the PF is found as Solution
α =600, R = 0.5 Ω , L = 6.5
I 2 2
PF = s1 cos(= −α) cos α mH, f = 60 Hz, ω = 2 π × 60 = 377 rad/s,
Is π Vs = 120 V, and θ = tan-1 ( ωL / R )
b. α = π / 3 = 78.470.
= Vdc
2Vm
= cos α 54.02V a. The steady-state load current at
π ωt = α , ILo = 49.34 A.

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 b. The numerical integration of iL in yields
the average thyristor current as IA =
44.05A.
c. By numerical integration of i 2L between
the limits ωt = α to π + α , we get the
rms thyristor current as IR = 63.71 A.
d. The rms output current Irms = 2 IR = 2
× 63.71 = 90.1A
e. The average output current Idc = 2IA = 2
× 44.04 = 88.1 A.
by iteration we find the critical delay
angle α c = 73.230.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 GATE QUESTIONS

Q.1 AC to DC circulating current dual

converters are operated with the
following relationship between their
triggering angles α1andα 2 .
a) α1 + α 2 =
180° b) α1 + α 2 =
360°
c) α1 − α 2 =
180° d) α1 + α 2 =
90°
[GATE-2001]

Q.2 A half wave thyristor converter a)

3200
W b)
400
W
supplies a purely inductive load as π π
shown in figure. If triggering angle c) 400W d) 800W
of the thyristor is 120° , the [GATE-2002]
extinction angle will be
Q.5 A three-phase thyristor bridge
rectifier is used in a HVDC link. The
firing angle α (as measure from the
point of natural commutation), is
constrained to lie between 5° and 30°
. If the dc side current and ac side
voltage magnitudes are constant,
a) 240° b) 180° which of the following statement is
c) 200° d) 120° true (neglect harmonics in the ac
[GATE-2001] side current and commutation
overlap in your analysis).
Q.3 A six pulse thyristor rectifier bridge a) Reactive power absorbed by the
is connected to a balanced 50 Hz rectifier is maximum when
three-phase ac source. Assuming α = 5°
that the dc output current of the b) Reactive power absorbed by the
rectifier is constant, the lowest rectifier is maximum when
frequency harmonics component of α = 30°
the ac source line current is c) Reactive power absorbed by the
a) 100 Hz b) 150 Hz rectifier is maximum when
c) 250 Hz d) 300 Hz
α = 15°
[GATE-2002]
d) Reactive power absorbed by the
rectifier is maximum when
Q.4 In the single-phase, diode bridge
rectifier shown in figure, the load α = 20°
resistor is R = 50Ω . The source [GATE-2002]
voltage is V = 200sin ωt , where
Q.6 A fully controlled natural
ω= 2π × 50 radians per second. The
commutated 3-phase bridge
power dissipated in the load resistor
rectifier is operating with a firing
R is
angle α = 30° . The peak to peak
voltage ripple expressed as a ratio of

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 the peak output dc voltage at the reliably under all conditions of Vb
output of the converter bridge is variation is
a) 0.5 b) 3 / 2
 3
c) 1 −  d) 3 − 1
 2 

[GATE-2003]

Q.7 A phase-controlled half-controlled a) 10000Ω b) 1600Ω

single-phase converter is shown in c) 1200Ω d) 800Ω
figure. The control angle α = 30° [GATE-2004]
Q.9 The circuit in figure shows a full-
wave rectifier. The input voltage is
230 V (rms) single-phase ac. The
peak reverse voltage across the
diode D1andD 2 is

The output dc voltage wave shape

will be as shown in
a)

a) 100 2V b) 100V
c) 50 2V d) 50V
b) [GATE-2004]

Q.10 The circuit in figure shows a 3-

phase half-wave rectifier. The
source is a symmetrical, 3-phase
four-wire system. The line-to-line
c)
voltage of the source is 100V. The
supply frequency is 400 Hz. The
ripple frequency at the output is

d)

a) 400 Hz b) 800 Hz
c) 1200 Hz d) 2400 Hz
[GATE-2004]
[GATE-2003]
Q.11 A three-phase diode bridge rectifier
Q.8 The triggering circuit of a thyristor is fed from a 400V RMS, 50 Hz, and
is shown in figure. The thyristor three-phase AC source. If the load is
requires a gate current of 10 mA, for purely resistive, then peak
guaranteed turn-on. The value of R instantaneous output voltage is
required for the thyristor to turn on equal to

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 a) 400V b) 400 2V
2
c) 400 V d)
3 [GATE-2006]
[GATE-2005] Q.14 A 3-phase fully controlled bridged
converter with freewheeling diode
Q.12 Consider a phase-controlled is fed from 400 V, 50 Hz AC source
converter shown in the figure. The and is operating at a firing angle of
thyristor is fired at an angle α in 60° . The load current is assumed
every positive half cycle of the input constant at 10A due to high load
voltage. If the peak value of the inductance. The input displacement
instantaneous output voltage equals factor (IDF) and the input power
230 V, the firing angle α is close to factor (IPF) of the converter will be
a) IDF = 0.867; IPF = 0.828
b) IDF = 0.867; IPF = 0.552
c) IDF = 0.5; IPF = 0.478
d) IDF = 0.5; IPF = 0.318
[GATE-2006]
a) 45° b) 135°
c) 90° d) 83.6° Q.15 A single-phase bridge converter is
[GATE-2005] used to charge a battery of 200 V
having an internal resistance of 2 Ω
Q.13 A single-phase half wave as shown in figure. The SCRs are
uncontrolled converter circuit is triggered by a constant dc signal. If
shown in figure. A 2-winding SCR 2 gets open circuited, what will
transformer is used at the input for be the average charging current?
isolation. Assuming the load current
to be constant and v = Vm sin ωt, the
current waveform through diode D2
will be

a) 23.8A b) 15A
c) 11.9A d) 3.54A
[GATE-2006]

a) Q.16 A single-phase fully controlled the

thyristor bridge ac-dc converter is
operating at a firing angle of 25° and
b) on overlap angle of 10° constant dc
output current of 20 A. The
fundamental power factor
(displacement factor) at input ac
c) mains is
a)0.78 b) 0.827
c)0.866 d)0.9
[GATE-2007]
d)
Q.17 A three-phase fully-controlled
thyristor bridge converter is used as

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 line commutated inverter to feed 50 Distortion (%THD) and the rms
kW power 420 V dc to a three phase, value of fundamental component of
415 V (line), 50 Hz ac mains, the input circuit will respectively be
Consider dc link current to be a) 31% and 6.8 A b) 31% and 7.8 A
constant. The rms current of the c) 66% and 6.8 A d) 66% and 7.8 A
thyristor is [GATE-2008]
a) 119.05A b) 79.37A Q.21 A single phase fully controlled
c) 68.73A d) 39.68A bridge converter supplies a load
[GATE-2007] drawing constant and ripple free
load current. If the triggering angle
Q.18 A single phase full-wave half- is 30° , the input power factor will be
controlled bridge converter feeds an a) 0.65 b) 0.78
inductive load. The two SCRs in the c) 0.85 d) 0.866
converter are connected to a [GATE-2008]
common DC bus. The converter has
to have a freewheeling diode Q.22 A single-phase half controlled
a) Because the converter converter shown in the figure
inherently does not provide for feeding power to highly inductive
free- wheeling load. The converter is operating at a
b) Because the converter does not firing angle of 60° .
provide for free-wheeling for
high values of triggering angles
c) Or else the free-wheeling action
of the converter will cause
shorting of the AC triggering
angles
d) Or else if a gate pulse to one of If the firing pulses are suddenly
the SCRs is missed, it will removed, the steady state voltage
subsequently cause a high load ( V0 ) waveform of the converter will
current in the other SCR. become
[GATE-2007] a)

Q.19 A single-phase, 230V, 50 Hz ac

mains fed step down transformer
(4:1) is supplying power to a half-
wave uncontrolled ac-dc converter
used for charging a battery (12 V dc) b)
with the series limiting resistor
being 19.04Ω . The charging current
is
a) 3.43 A b) 1.65 A
c) 1.22 A d) 1.0 A
[GATE-2007] c)

Q.20 A three phase fully controlled bridge

converter is feeding a load drawing
a constant and ripple free load
current of 10A at a firing angle of 30°
The approximate Total harmonic d)

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 a) 10μs b) 50μs
[GATE-2008]
Q.23 The fully controlled thyristor c) 100μs d) 200μs
converter in the figure is fed from a [GATE-2013]
single-phase source. When the
°
firing angle is 0 , the dc output Q.26 The figure shows the circuit of a
voltage of the converter is 300V. rectifier fed from a 230 V (rms), 50
What will be the output voltage for a Hz sinusoidal voltage source. If we
firing angle of 60° , assuming want to replace the current source
continuous conduction?
with a resistor so that the rms value
of the current supplied by the
voltage source remains unchanged,
the value of the resistance (in ohms)
is _____.(Assume diodes to be ideal.)

a) 150 V b) 210 V
c) 300 V d) 100πV
[GATE-2010]

Q.24 A half-controlled single-phase

bridge rectifier is supplying an R-L
load. It is operated at a firing angle
α and the load current is continuous.
The fraction of cycle that the [GATE-2014]
freewheeling diode conduct is
1  α Q.27 The figure shows the circuit diagram
a) b) 1 −  of a rectifier. The load consists of a
2  π
α α resistance 10 Ω and an inductance
c) d) 0.05 H connected in series.
2π π
[GATE-2012] Assuming ideal thyristor and ideal
diode, the thyristor firing angle (in
Q.25 Thyristor T in the figure below is degree) needed to obtain an average
initially off and is triggered with a load
single pulse of width 10 µs. It is voltage of 70 V is ____.
 100 
given that L=  μH and
 π 
 100 
C=  μF . Assuming latching
 π 
and holding currents of the thyristor
are both zero and the initial charge [GATE-2014]
on C is zero, T conducts for

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.28 A fully controlled converter bridge
feeds a highly inductive load with
ripple free load current. The input
supply (vs ) to the bridge is a
sinusoidal source. Triggering angle
of the bridge converter is α = 30o .
The input power factor of the bridge
is

[GATE-2014]
[GATE-2014]
Q.30 A diode circuit feeds an ideal
Q.29 A three-phase fully controlled inductor as shown in the figure.
bridge converter is fed through star- Given
delta transformer as shown in the ν=
s 100sin ( ωt ) V, where ω =100π rad/s
figure. and L = 31.83 mH. The initial value
of inductor current is zero. Switch S
is closed at t = 2.5ms. The peak
value of
inductor current iL (in A) in the first
cycle is _____.

The converter is operated at a firing

angle of 30o Assuming the load
current (I0) to be virtually constant
at 1 p.u. and transformer to be an
[GATE-2014]
ideal one, the input phase current
waveform is Q.31 In the following circuit, the input
voltage Vin is 100 sin (100πt)V. For
100πR C = 50, the average voltages
across R (in volts) under steady-
state is nearest to

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Vm(t) = 200πSin(100πt) V, R = 20Ω,
(a)100 (b)31.8 E = 800V. The inductor L is large
(c)200 (d)63.6 enough to make the output current
[GATE-2015]
IL a smooth dc current. Switches are
Q.32 In the given rectifier, the delay angle lossless. The real power feedback to
of the thyristor T1 measured from the source, in kW, is __________.
the positive going zero crossing of
Vs is 30 ° . If the input voltage Vs is
100 sin (100πt)V , the average
voltage across R (in Volt) under
steady-state is ______.

[GATE-2016]

Q.36 A single - phase bi - directional

[GATE-2015] voltage source converter (VSC) is
shown in the figure below. All
Q.33 A single-phase thyristor-bridge devices are ideal. It is used to charge
rectifier is fed from a 230 V, 50 Hz, a battery at 400V with power of
single-phase AC mains. If it is 5kW from a source Vs = 220 V(rms),
delivering a constant DC current of 50HZ sinusoidal AC mains at unity
10 A, at firing angle of 30o , then p.f. If its AC side interfacing inductor
value of the power factor at AC is 5mH and the switches are
mains is operated at 20KHz, then the phase
(A) 0.87 (B) 0.9 (C) 0.78 (D) 0.45 shift (δ) between AC mains voltage
[GATE-2016] (Vs) and fundamental AC rms VSC
voltage (Vc1), in degree, is ________.
Q.34 A three - phase diode bridge
rectifier is feeding a constant DC
current of 100A to a highly inductive
load. If three - phase, 415V,50Hz AC
source is supplying to this bridge
rectifier then the rms value of the
current in each diode, in ampere, is
________.
[GATE-2016]

Q.35 A full - bridge converter supplying

an RLE load is shown in figure. The
firing angle of the bridge converter [GATE-2016]
is 120°. The supply voltage

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.37 The figure below shows an frequency in Hz of the voltage ripple
uncontrolled diode bridge rectifier on the DC side is
supplied from a 220 V, 50 Hz. 1 (A) 25 (B) 50
phase ac source. The load draws a
(C) 100 (D) 300
constant current 0 Ι = 14 A, the
conduction angle of the diode D1 in [GATE-2017]
degrees (rounded off to two decimal
places)is_____. Q.39 The figure below shows the circuit
diagram of a controlled rectifier
supplied from a 230V, 50 Hz. 1
phase voltage sources and a 10:1
ideal transformer. Assume that all
devices are ideal. The firing angles
of the
thyristors T1 and T2 are 90 and 2700,
[GATE-2017] respectively.
Q.38 In the circuit shown, the diodes are
ideal, the inductance is small and
Ι0≠0 .Which one of the following
statements is true ?

The RMS value of the current

through diode D3 in amperes is ____.
[GATE-2017]

Q.40 In the circuit shown in figure, the

(A) D1 conducts for greater than diode used is ideal. The input power
1800 andD2 conducts for greater factor is_____. (Give the answer up to
than 1800. two decimal places)
(B) D2 conducts for more than 1800
and D1 conducts for 1800.
(C) D1 conducts for 1800 and D2
conducts for 1800.
(D) D1 conducts for more than 1800
and D2 conducts for 1800. [GATE-2017]
[GATE-2017]
Q.41 The waveform of the current drawn
Q.39 A phase – controlled, single – phase, by a semi-converter from a
full – bridge converter is supplying a sinusoidal AC voltage source is
highly inductive DC load. The shown in the figure. If I0 = 20 A, the
converter is fed from a 230 V, 50 Hz, rms value of fundamental
AC source. The fundamental

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 component of the current is ______ A Q.43 A phase controlled single phase
(up to 2 decimal places). rectifier, supplied by an AC source,
feeds power to an R-L-E load as
shown in the figure. The rectifier
output voltage has an average value
Vm
given V0 = ( 3 + cos α ) ,
2π
V=
m 80 π Volts and α is the firing
angle. If the power delivered to the
[GATE-2018]
lossless battery is 1600 W, α in
Q.42 A single phase fully controlled degree is __________ (up to 2 decimal
rectifier is supplying a load with an places).
anti-parallel diode as shown in the
figure. All switches and diodes are
ideal. Which one of the following is
true for instantaneous load voltage
and current ?

[GATE-2018]

(A) v 0 ≥ 0 and i0 < 0

(B) v 0 > 0 and i0 < 0
(C) v 0 ≥ 0 and i0 ≥ 0
(D) v 0 < 0 and i0 ≤ 0
[GATE-2018]

ANSWER KEY:
1 2 3 4 5 6 7 8 9 10 11 12 13 14
(a) (a) (c) (c) (b) (a) (b) (d) (a) (c) (b) (b) (c) (c)
15 16 17 18 19 20 21 22 23 24 25 26 27 28
(c) (c) (c) (c) (d) (d) (d) (a) (a) (d) (c) 23 69 0.78
28 29 30 31 32 33 34 35 36 37 38 39 40 41
(b) 17.07 (c) 61.53 (c) 57.7 6 9.21 224.17 (a) (c) 0 0.707 17.39
42 43
(c) 90

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 EXPLANATIONS

Q.1 (a) P = 400W .

Q.2 (a) Q.5 (b)

di
Vm sin ωt = L
dt Q.6 (a)
di Vm Peak to peak ripple voltage
= sin ωt
dt L peak output dc voltage
i
Vm
t
VML − VML sin150°
∫0 L ∫α sin ωtdt
di = = = 0.5
VML
V α
i = m cos ωt t
ωL
Vm
=i ( cos α − cos ωt )
ωL
For extinction angle, at
ωt= β,i = 0 Q.7 (b)
Vm
=
⇒0 ( cos α − cosβ )
ωL
Which gives, cos α = cosβ
β 2nπ ± α
=
For n = 1
β = 240° , 480° .

Q.3 (c) As current source is connected as

Ia nπ load so load current continuously
is ∝ .cos flows either through pair T1T2 or
n 6
where n1,3,5 T3T4 . T1andT2 are fired at α = 30° ,
For, n = 3 these SCR’s will get turned on as
is = 0 firing angle is 30° , pair T3T4 will be
For, n = 5 fired at π + α .
is ∝ − a
I So, T1andT2 conducts for
5 α < ωt < π + αVdc is positive.
Lowest harmonic present is fifth
T3 &T4 are fired at π + α , the supply
harmonic.
Its frequency = 50 × 5 = 250 Hz voltage turns off T1andT2 by natural
commutation and the load current is
Q.4 (c) transferred from T1 , T2 orT3 , T4 .
(V )
2
2
Vrms m / 2 Vdc is negative when T3 &T4 conduct.
=P =
R R
Q.8 (d)
( 200 / 2 )
2
V= 12 ± 4V
= b
50

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Vb( min ) = 8V andVb( max ) = 16 V There are three pulses of output
The thyristor must turn on even for voltage during one cycle of input
minimum value of Vb . voltage.
Gate current for guaranteed turn on So, frequency of ripple
= I= 10mA , neglecting voltage = 3f = 3 × 400 =
1200Hz .
g

between gate & cathode. Q.11 (b)

Therefore, required value of Maximum value of input voltage
Vb(min) 8
=R = = 800Ω . Vm = 400 2V
Ig 10mA Since load is purely resistive,
therefore peak instantaneous output
Q.9 (a) voltage
Vm = 400 2V

Q.12 (b)

When ‘a’ is positive with respect to

‘b’ diode D1 conducts and diode D2
is reverse biased.
Applying KVL,
VD2 = 100V ( rms )
So, diode D2 is subjected to reverse
voltage of 100V (rms).
Similarly, during negative half cycle,
D1 is subjected to reverse voltage of Supply voltage waveform is shown
100 V (rms). in fig. (a) it has peak value of
Thus, for diode D1andD 2 peak π
230 2V at ωt = .
reverse voltage is 100 2V 2
(maximum value of the voltage If the thyristor is triggered at firing
across the diodes). π
angle α < , output voltage will also
2
Q.10 (c) have peak value of 230 2V
By drawing the (O/P) voltage.
The supply voltage at α = 135°
Vs α =135° = Vm sin sin135°
1
= 230 2 × = 230V
2
So, when thyristor is triggered at
α = 135° 230V will appear across
theload, it is also the peak value of
Each diode conducts for 120° only. the output voltage.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.13 (c) 2 2 6
=Is1 = I0 sin 60° I0
π π
Current distortion factor (CDF)
Is1 6  1 3
= = I0 ×  
Is π  I0 2 
3
= = 0.955
π
Input power factor (IPF)
= CDF × IDF
= 0.955 × 0.5
≈ 0.478 .

Q.15 (c)
T1 & T4 gets forward biased,
whenVm sin θ1 ≤ E

For 0 < 0 < ωt ≤ π, DiodeD1 is

forward biased and conduct.
For π < π < ωt ≤ 2π, DiodeD1
becomes reverse biased and Diode
D2 gets forward biased and starts Iavg = (average current)
conducting. π −θ1
1
As load current is constant current = ∫ ( Vm sin ωt − E ) dθ
through Diode D 2 ( i D2 ) can be 2πR θ1

1
drawn as shown in the figure. ∴
= I0 ( avg ) [ 2Vm cos θ − E(π − 2θ1 )]
2πR
Q.14 (c)
Load current is constant
=
1 
2π × 2 
(
2 × 230 × 2  cos θ1 − 200 ( π − 2θ1 )
 )
I0 = 10 A  E 
In 3 − φ full converter with free Where θ1 = sin −1  
wheeling diode, Input displacement  Vm 

= cos
factor (IDF) = α cos= 60° 0.5  200 
= sin −1  
RMS value of source current  230 × 2 
2π 1 2 = 38 = °
0.66rad
Is = I 0 × × = I 0
2

3 π 3 ∴ I0 ( avg ) =
1
th
RMS value of n harmonic 2π × 2
4I0 nπ  2 2 × 230 cos 38° − 200 ( π − 2 × 0.66 ) 
Ish = sin  
2nπ 3 = 11.9A
RMS value of fundamental current

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 Q.16 (c) conducting load current flows
 μ through T1D1forα<ωt<π .
FDF cos  α + 
=
 2 At ωt = π, Vs becomes negative and
 10°  D1 gets reverse biased and D2 is
= cos  25° + =  0.866
 2  forward biased. So during
π<ωt<π+α , free wheeling action
Q.17 (c) takes place through T1 and D2 and
Let DC link current = Id output voltage becomes zeros.
At ωt= π + α , Load T2 is triggered
DC voltage applied to the inverse
and load current is transferred from
Vd = 420V
T1andT2 . So, during π+α<ωt<2π,T2 D 2
Power fed to the inverter
conducts.
=P V= d Id 50kW
At ωt = π + α, It may be possible
⇒ 420Id =×
50 103 that load current is not transferred
Id = 119.05A completely from T1toT2 , and T1andT2
Current through each thyristor may be conducting simultaneously
flows for period of 2π / 3 . which results in short circuit of the
So, rms current of thyristor. supply for short direction.
π/3
1
( I th )rms = ∫ I dωt
2
d
Q.19 (d)
2π 02

Id 119.05
= = = 68.73A
3 3

Q.18 (c)

Input to the converter

1
=Vs   230 − 57.5V
4
Diode conducts when Vs ≥ E
Vm sin θ1 = E
1− φ full wave half controlled 57.5 2 sin θ1 = 12
bridge converter without θ1 = 8.486° of 0.148rad
free wheeling diode is shown
in the figure.

At ωt = α, T1 is fired and T1 starts

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 Charging current flows during
θ1 ≤ ωt ≤ π − θ1 and can be expressed
as
2π
1
2π ∫0
I0 = i 0 dωt
π −θ1
1  Vm sin ωt − E 
=
2π ∫
θ1

 R
 dωt

1
=I0  2Vm cos θ1 − E ( π − 2θ1 ) 
2πR 

1  2 × 57.5 2 ×
=
2π ×19.04 
cos8.486° − 12 × ( π − 2 × 0.148 ) 
= 1.06A ≈ 1A

Q.20 (b)
Load current= I= 0 10A
RMS value of total source current
Average output voltage
2 2
=Is I= 10= 8.165a 1
π+α
V0 = ∫ Vm sin ωt.d(ωt)
0
3 3
Supply current is can be expressed π α
by Fourier series 2V
⇒ V0 =m cos α
∞
4I π
Is ( t ) = ∑ 0
n =1,3,5 nπ for α = 30°
nπ 3
s sin sin ( nωt − nα ) V0 = Vm
3 π
RMS value of fundamental current. Average output current = I0
4I π (constant)
Is1 = 0 sin
2π 3 RMS value of supply current
4 ×10 3 = I= s I0
⇒ Is1= × = 7.8A RMS value of supply voltage
2π 2
Total Harmonic distortion 2Vm
= V=
π
s
2
 Is  Input power factor
=   − 1×100
 Is1  =
Power delivered to load
2 Input VA
 8.165 
=   − 1×100 VI
 7.8  = 0 0
Vs Is
= 31% .
=
( )
3 / π Vm I0
Q.21 (b) Vm / 2.I0
6
= = 0.78 .
π

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 Q.22 (a) So load current will flow through
T1D1 and V0 = Vs .

Q.23 (a)
For firing angle, α average output
voltage of the converter is given by
2V
Single phase half controlled V0 = m cos α
π
converter.
As load is highly inductive, it means When α = 0°
load current is continuous and 2Vm
= V0 = cos 0° 300
almost constant. π
2Vm
= 300
π
When α = 60°
2V
V0 = m cos 60°
π
= 300 = cos 60° 150V

Q.24 (d)

During 0 < ωt < α

Freewheeling by T2 D1 , V0 = 0
α < ωt < π
T1D1conductsV0 = Vs
π < ωt < π + α Freewheeling diode conducts for 2α
Freewheeling by T1D 2 , V0 = 0 over complete cycle
π + α < ωt < 2π 2α α
∴ Fraction ==
T2 D 2 conduct, V0 = −Vs 2π π
T1 is again triggered at 2π + α
So, during 2π + α < ωt < 3π, T1D1 Q.25 (c)
conducts.
Now, if firing pulses are removed
after T1 is triggered at 2π + α .
At, ωt= 3π + α , no firing pulse will
be available to trigger T2 . So load
current will flow through T1D 2 as
load current is continuous. So
during 3π+α<ωt<4π,T1D 2 will Conduction time = π LC
continue to conduct forward biased
 100  100 
and D 2 will become reverse biased. = π  ×10−6  ×10−6 
 π  π 
So, D1 will conduct and T1 is already
= 100μs
conducting.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.26 (23) 1
=70 32.5 [1 + cos α ]
We have the rectifier circuit as 2π
70 × 2π
or 1 + cos α =
325
or 1 + cos α = 1.3526
cos α = 0.3526
Thus, α = cos −1 ( 0.3526 )
= 69.35o

Q.28 (0.779)
As the diodes are ideal, so if we are For a fully controlled bridge
maintaining same current through converter input power factor is
resistor then Vab also does not given by
change, i.e. 2 2
Vab = 230 V Input P.F. = cos α
π
and Iab = 10 A
2 2
Hence, the required value of = cos 30o
π
resistance is
2 2 3
Vab 230 = ×
Rab= = = 23 Ω π 2
I ab 10
; 0.779
Q.27 (69.35°) Q.29 (b)
We have the rectifier circuit as When R phase has maximum voltage
at conducts and lines α and c
conducts.The current are divided
into R and YB winding.

From the circuit, we obtain

1 π
sin ωtd ( ωt )
2π ∫α
=V0

1
= Vm [ − cos ωt ]α
T

2π
1
= Vm [1 + cos α ]α
T

2π
Since, from the given problem, we have
Vo = 70 V; Vm = 325 V
Substituting it in equation (i), we get

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 I0 × 2R 2I0 When switch is closed at t = 2.5 ms,
current through R= =
3R 3 we have
I dI
current through B and Y = 0 Vs − L = 0 ( in positive half cycle )
3 dt
Phase an conduct from 90° to 150° dI
or Vs − L
2I dt
I0 =
3 For the current to be maximum, we
where B conducts, have
dI
current through
I0
R and Y = =0
3 dt
2I or Vs = 0
current through B and Y = 0
3 So, =
Vs 100sin ωt = 0
The current through Δ - phase winding or ω t = nπ
π
or = t = 10 ms
100π
Therefore, the current is obtained as
1 10 ms
L ∫2.5 ms
Vs dt

1
100sin ωt + d ( ωt )
10 ms
=
31.83 × 10−3 ∫ 2.5 ms

t = 10ms
1  cos ωt 
= × 100 
 ω  t = 2.5ms
−3
31.83 × 10
 1  100 1
=  + 1 × × −3
 2  100π 31.83 × 10
= 17.07 A

Q.31 (c)
Time period of sinusoidal voltage is
Q.30 (17.07) 2π
We have the diode circuit as T=
100π
1
= = 20ms
50
Time constant of the circuit is
50π 1
τ RC
= = = sec
100π 2π
Given parameters for the circuit are
So,we observe that
ω = 100p rad/s τ >> T
=Vs 100sin ( ωt ) V Or Time constant >> Time period
For the first half cycle, we have the
L = 31.83mH = 31.83 × 10−3 H
circuit as

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 After charging, it will not discharge
immediately, so voltage across
resistance R is
= 2Vm
= 2 x100 From the shown waveform, we
= 200V obtain the average output voltage in
Again, for the second half cycle, steady state as,
circuit becomes as 1 2π
2π ∫α
V0 = sin(100π t )d (ωt )

100
= [3 + cos α ]
2π
100
= [3 + cos 30°]
2π
= 61.52V

Q.33 (c)
In second half cycle also, voltage
Supply power factor
across resistance R is
= 2Vm (
= (Distortion factor) x cos φ1 )
= 2 x100 2 2
= 200V = × cos 30 =0.7796 ; 0.78
Π

Q.32 (61.52) Q.34 (57.35)

Given rectifier circuit,
Diode current rms,  ID 
rms
2
I
Is 0 3
= =
2 2
I
= 0
3
The applied source voltage is 100
= = 57.735 A
VS = 100sin(100π t ) 3
Ans : 57.35
The source voltage and output
voltage is illustrated in the figure Q.35 (6)
below.

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 Sol: → D1 conducts for 1800 and D 2 conducts
Output voltage, Vo = - E + Io R for 1800 + 
Vo = -800 + Io × 20 During 0 to  (or) 2π +  to π
2Vm
Vo = cos α
π
2 × 200 π
Vo = cos120°
π
Average reduction in output voltage
Vo = - 200 V
due to source inductance= ∆Vdo
From equation (1) - 200 = - 800 + Io × 20
∆Vdo =
4 fLs .I o
Io = 30A
= 4x50x(10.10−3 )x14
Power feedback to the source, Po = Vo Io =28V.
= 200 × 30 = 6kW Ans : 6 Vm
∆
=Vdo [cos α − cos(α + µ )]
π
Q.36 (9.21)
at , α = 0°,
Vm
Sol: =28 [cos 0° − cos(0° + µ )]
PDC = 5000 W π
1 − cos µ =0.282
PAC = Vsr1Isr1 cos θ = 220 × Isr1 ×1
cos µ = 0.717
PAC = PDC
⇒= µ 44.171°
5000
Isr = = 180 + 44.17
Conduction angle
220
= 224.17
X s = ωL = 100 π × 5 × 10−3
Isr × s Q.38 (c)
sin δ= = δ= 9.21o
Vs
For η pulse rectifier output
Q.37 (a) frequency f0 = η fs full bridge
rectifier is a 2 pulse
converter. So output frequency f0 =
2 × 50 = 100 Hz

Q.39 (0)

The load is purely resistive load. So

the free wheeling diode D3 never
conducts. So current through the
free wheeling diode D3 is zero.

Q.40 (0.707)
The rms output voltage

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 Vm
Sol. The rms output voltage Vrms =
2
Vm
Vrms
Input power factor = = 2
Vs Vm
2
2 1
= = = 0.707
2 2
Ans : 0.70 to 0.71

Q.41 (17.39)

Assuming single phase symmetrical

semi-converter (we can also opt
single phase asymmetrical semi-
converter as the output voltage and
current waveform of load and
source will not be affected)

The Fourier series representation of

supply current is given by,
The given circuit is a symmetrical ∞
4I0 nα  nα 
single phase semi-converter, = is ( t ) ∑
n = 1,3,5.... nπ
cos
2
sin  nωt −


2 
From the given diagram

The value of firing angle (α ) = 300

Hence, the RMS value of supply
fundamental current in a single
phase semi-converter is given by,
4I0 α
× cos
π 2 4 × 20
= = cos150 17.39
2 π 2

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 Hence, the RMS value of 120
cos α=
− 3= 0
fundamental component of the 40
supply current is 17.39 A. =α cos
= −1
( 0 ) 900
Hence, the firing angle (α ) will be 900 .
Q.41 (c)

Given that;A single phase fully

controlled rectifier with
freewheeling diode.
As the converter has freewheeling
diode, hence the instantaneous
output voltage will never be
negative whether the converter is
working under continuous mode or
discontinuous mode.
The instantaneous value of output
current is always unidirectional as it
is a AC to DC converter. Here we can
think about two cases :

Case I :Discontinuous conduction

mode – Here the output current,
i0 ≥ 0.
Case II : Continuous conduction
mode – Here the output current,
i0 > 0.
Hence, the correct option is (C).

Q.38 (90)

Given that; Power transfer to the 80

V battery,
1600
=
Hence, I0 = 20 A
80
V 80 π
V0 = ( 3 + cos α ) = ( 3 + cos α )
2π 2π
V0 40 ( 3 + cos α )
=
The relation between 0 V and E is given by,
V0 = I 0 R + E = 20 × 2 + 80
V0 = 40 + 80 = 120 V
From equation (i),
= = 40 ( 3 + cos α )
V0 120

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 3 CHOPPERS

3.1 INTRODUCTION

Chopper circuit provides adjustable DC

from fixed DC. If is analogous to the
transformer of AC. It is mainly categorized
into two types

i) AC link chopper

From fig (b), it can be seen that average V0.

TON TON
=V0 = Vs = VS fTON VS − −(3.1)
TON + TOFF T
where
1
ii) DC chopper f = is called as chopping frequency
T
T
δ= ON = duty cycle.
T
From equation (3.1) it is clear that V0 can
be controlled either by controlling TON or
Principle of Chopper Operation:It is a by controlling f.
high speed ON/OFF semiconductor switch
(eg SCR). Inductor L & FD are used to make i) Constant frequency system:
load current i0 to be continuous. 1
See fig f = is constant
T
but on time TON (ie pulse width) is
varied, so it is also known as “Pulse
width Modulation” PWM scheme or
“Time Ratio Control” TRC.

ii) Variable frequency system: See fig, f is

varied but either TON or TOFF remains
constant. This scheme also said to
“Frequency Modulation Scheme”.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 let at t = 0, i=I1& t = TON, i= T2
i t
Vs
⇒= ∫I di
L ∫0 dt0 < t ≤ TON
1

V
⇒ i − Ii = s t
L
Vs
⇒ I=2 − I1 TON − − − (3.2)
L
Disadvantages of FM over PWM • Energy stored [as i increases] during
Scheme: 0<t<TON
TON
i) Chopping frequency has to be varied Wstored = ∫ VLidi
over wide range hence filter design 0
becomes difficult. I2
L 2 I
ii) Due to wide range of frequency = L = ∫I idi 2 | i |I12
variation, there is a possibility of
interference with signaling & telephone
lines in FM scheme.
=
2
(
L 2 2
I 2 − I1 )=
L
2
( I2 − I1 )( I2 + I1 )
iii) The large OFF time in FM scheme, may put I 2 − I1 from equation 3.2
make the load current to be L V
discontinuous. ⇒ Wstored = ( I 2 + I1 ) s TON
2 L
There is one limitation of PWM over FM
V V
scheme, low range of α is not possible = s ( I 2 + I1 ) s TON − −(3.3)
with PWM as it requires TON to be very 2 L
low, which is difficult to achieve for the
commutation circuits. • When CH is OFF see fig.

3.2 STEP-UP CHOPPERS

• O/P voltage V0> VS

• Inductor L is used to store the energy &
Diode D to ensure no feedback from
load see fig Let V0 = constant
Then VL = Vs – V0
di
⇒L = Vs − V0
dt
V − V0
⇒ di =s dt
L
• When CH is ON, L is shorted to VS, see
fig. if resistance of L is negligible.

i = I2 at t = TON, i+I1 at t =
TON + TOFF = T
Vs − V0
i t
di V
Vs = L ⇒ di =s dt ⇒ ∫ di = ∫ dt
dt L I2
L TON

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
  V − V0 
⇒ i = I2 +  s  ( t − TON )
 L 
 V − Vs 
⇒ i = I2 −  0  ( t − TON )
 L 
V − Vs
⇒= t T, I 2 − 0 ( T − TON )
L
V0 − Vs ii) 2nd quadrant or Type B Chopper:
=⇒ I 2 − I1 TOFF − − − (3.4)
L In 2nd quadrant V0I0 = -ve so power flow
• Energy released from L [as decreases] is from load to source, hence load must
during TON< t < T contain a dc source E sec fig Diode is
present to ensure unidirectional flow of
T
Wreleased = ∫ V i dt
TON
L L
current.
• When CH2→ ON, L stores energy from
V0 − Vs  I1 + I 2 
  TOFF − − − (3.5) E.
2  2  • When CH2→ OFF, stored energy of L is
as i = Ii at t = 0 & at t = T so given to supply.
Wstored = Wreleased Ldi 0
From equation (3.3) & (3.5) & V=0 + E > Vs , so it is like a step-
dt
Vs V0 − Vs up chopper.
(I 2 + I1 )T=ON (I 2 + I1 )TOFF
2 2
V − Vs TON
⇒ 0 =
Vs TOFF
V − Vs TON T
⇒ 0 = +=1
Vs TOFF TOFF
T Vs
⇒ V0 = Vs =
T − TON 1 − TON / T
Vs
⇒ as δ < 1, V0 > Vs V0 =
1− δ

3.3 TYPES OF CHOPPER CIRCUITS

Depending upon the polarities of V0& I0,

choppers can be classified as:

i) 1stquadrant or type A chopper: iii) Two quadrant type–A or Type-C

It is same as the step down chopper see fig. Chopper.
It is a combination of type A & type B,
see fig.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 iv) Two quadrant Type-B or Type-D
Chopper
v) Four quadrant or Type-E Chopper:

• When CH1& CH2 are ON, during TON,

VO=+VS& i0 = +ve, flows through the 1st quadrant operation:
load & hence energy is stored in the CH1→ ON, current flows through CH1 &
inductance present in the load. CH4, ie V0 = +VS& i0 = +ve, load inductance
• During TOFF ie CH1& CH2 are off, the L stores energy.
current i0 through the load inductance When CH1 is turned OFF, i0 decreases &
decreases hence energy is released voltage across L get reversed which turn-
from inductance, so D1& D2 get ON &V0 ON D2, so CH4 D2 operates then V0 = 0 (as
= -Vs. shorted) & i0 = +ve.
• If TON> TOFF, V0 = +ve 1st quadrant
operation see fig. 2ndquadrant operation:
• If TON< TOFF, V0 = -ve 4th quadrant When CH2 is ON, D4 ets ON so current i0 = -
operation see fig. ve flow through CH2& D4, inductance L
stores energy. When CH2 is turned OFF i0
(+ve) decreases & VL gets reverse which
make D1 ON & D1-D4 ON so
V0 = +Vs & i0 = -ve, L releases energy.
3rd quadrant operation:
dc source E must be reversed, CH3& CH2
made ON i0 = -ve & V0 = -Vs, L stores energy
then CH3 is turned OFF, due to L, D4 gets ON
& CH2 D4 conducts & provide i0 =-ve +V0 =0.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 4th quadrant operation:
E must be reversed, CH4& D2 mode
conducting L gets charged (& stores
energy) due to E, thus V0 = 0 i0 = +ve, when
CH2 is made OFF, due to L, D3 starts
conducting. As D2 D3 ON, V0 = -VS& i0 = +ve.
During 0 ≤ t ≤ TON when CH is ON
Steady state analysis of type – A Chopper di
I i0 L + Ri + = E Vs → (1)
+ dt
During TON ≤ t ≤ T or 0 ≤ t ′ < TOFF
+
R where t ′ = t-TON
di
VS V0 L + Ri = +E 0 → (2)
FD dt
L

-
E
-
Let us assume continuous conduction as in fig 3.12(a)

=t 0,=
E I mn from equation (1)
Vs − E  -Rt
 R
t
=i(t) 1 − e L
+
 mnI e L
− −(3)
R  
=t T=
ON , i I mx (say)
Vs − E  -R
TON 
-R
TON
=I mx 1 − e L
+
 mnI e L
− −(4)
R  
=t TON or= t ′ 0= i I mn
so from equation (2)
-Rt ′ -Rt ′
E 
i(t ′) = 1 − e L  + Tmx e L → (5)
R 
ωt t ′= TOFF , i= I mn
E -R
TOFF 
-R
TOFF
I mn = − 1 − e L  + I mn e L
R 
E ON  
 T-T  T-TON 
-  - 
or I mn =
− 1 − e  Ta 
 + I mn e  Ta  → (6)
R  
L
Where Ta =
R

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 from equation (4) & (6) TON Ta  E T 
δ mn= = ln 1 +  e Ta − 1 
1 − e-TON/Ta  E T  Vs 
=I mx
Vs
  − − −(7)
T  
 1 − e
-T/Ta
R  R If load current is discontinuous, form fig
Vs  eTON/ /Ta − 1  E the extinction time tx, from equation (5)
=& I mn   − − −(8) At t = tx – TON, i(t) = 0
R 1 − e-TON /Ta − 1  R
−E  -R
(t x − TON ) 
-R
(t x − TON )
Steady-state Ripple: ⇒= 0 1 − e L
+
 mxI e L
R  
I mx − Tmn =
(
Vs  1 − e
-TON/Ta
)(
1 − e-(T-TON )/Ta )  V −E -TON

R 1 − e-T/Ta so t x = TON + Ta ln 1 + s  1 − e Ta

if duty cycle be δ  E   
T The average O/P voltage from fig
δ = ON ⇒= δT&TOFF = (1 − δ ) T T  TON T 
T 1
pv ripple current
V0 = =
T ∫0
V0 dt  ∫ s t∫ 
 0
V dt + Edt
x 
 -Ta δT

 (1 − e )
(1-δ )T/Ta TON E
 I-e =V0 Vs + ( T-t x )
I mx − I mn   T T
=
∆I pv =
Vs / R 1 − e-T/Ta
∆I pv is maximum at δ =0.5 3.4 COMMUTATION (TURN OFF
PROCESS OF THYRISTOR)
 -0.5T
 -0.5T 
1 − e 1 − 
Ta Ta

Vs    All these commutation circuits can,

So, ∆I(max) = -T however, be broadly classified into two
R
1 − e Ta groups as under.
-0.5
Vs 1 − e Ta
3.4.1 FORCED COMMUTATION
= +0.5
R
1 + e Ta
In forced commutation, external elements L
Vs  T 
∆T(max) = tan h   and C which do not carry the load current
R  4Ta  continuously, are used to turn-off a
L 1 conducting thyristor. Forced commutation
= Ta = T can be achieved in the following two ways:
R f
V  R 
⇒ ∆T(max) = s tan h   i) Voltage commutation
R  4f L  In this scheme, a conducting thyristor is
R R commutated by the application of a
if R << 4fL then tan h =
4fL 4fL pulse of large reverse voltage. This
Vs R V reverse voltage is usually applied by
hence ∆1(max) = ⇒ ∆I(max) = s
R 4fL 4fL switching a previously charged
As duty cycle δ decreases, Imn decreases so capacitor. The sudden application of
limiting value (min value) δ , for which reverse voltage across the conducting
Imn = 0 thyristor the anode current to zero
 TON  rapidly. Then the presence of reverse
Vs  e Ta − 1  E voltage across the SCR aids in the
= I mn = − 0
R  TaT  R completion of its turn-off process.
 e − 1 
TON
E  TaT  ii) Current Commutation
⇒e Ta
=
1 +  e − 1 In this scheme, an external pulse of
Vs   current greater than the load current is

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 passed in the reversed direction The main thyristor is triggered at t=0 and
through the conducting SCR. When the RLE laod gets connected across source Vs
current pulse attains a value equal to so that load voltage v0 = Vs.
the load current, net pulse current
through thyristor becomes zero and the Mode II
device is turned off. The current pulse is The conditions existing at t1 continueduring
usually generated by an initially mode II.
charged capacitor.
An important feature of current
commutation is the connection of a
diode in antiparallel with the main
thyristor so that voltage drop across the
diode reverse biases the main SCR.
Since this voltage drop is of the order of
1 volt, the commutation time in current
commutation is more as compared to
that in voltage commutation.
3.4.2 LOAD COMMUTATION

In load commutation, a conducting

thyristor is turned off when load current
flowing through a thyristor either
i) become are due to the nature of load
circuit parameters or
ii) is transferred to another device from
the conducting thyristor.

3.4.3 VOLTAGE-COMMUTATED CHOPPER

Fig. Different modes of voltage-

computed chopper

Voltage commutated chopper is simple; it

has therefore been used extensively. It,
however, suffers from the following
disadvantages.
i) A starting circuit is required
ii) Load voltage at once rises to 2Vs at the
instant commutation of main SCR is
initiated. Freewheeling diode is
This chopper is generally used in high- therefore subjected to twice the supply
power circuits where load fluctuation is not voltage.
very large. This chopper is also known as iii) It can’t work at no load. It is because at
parallel-capacitor turn-off chopper, no load, capacitor would not get
impulse-commutated chopper or classical charged from –Vs to Vs when auxiliary
chopper. SCR is triggered for commutating the
main SCR.
Mode I

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Design Considerations
dυ
ic = C
dt
For a constant load current I0, the above
relation can be written as
Vs t .I
=Ic C= or C c 0
tc Vs
(t q + ∆t).I0
C=
Vs
Vs 1
=ic sin ω0 t where=ω0
ω0 L LC
Vs C
=
i cp = Vs .
ω0 L L
C
Icp ≤ I0 or Vs ≤ I0
L
2
V 
L≥ s  C
 I0 
t
t c1 = 1
2
π
ω0 t1 = π or t1 = = π LC
ω0
π
t c1 = LC
2
Peak current through T1 is given by
C
i T1P= IO + Vs .
L
C
i DP = Vs
L
The circuit cannot be operated at no load.

3.4.4 CURRENT-COMMUTATED CHOPPER

The power-circuit diagram for current-

commutated chopper is shown in Fig.

Fig : Various modes of current-

commutated chopper

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 ig1

t
igA

t
iO
IO
t
iT1 iT1=IO=iC
IO
t
VS ic=IO
iC = sin O t
iC OL
iC=IOcos O

t
1

iD1 tC
(t2-t1)=
O

t
Total turn of time

ifd

IO
t1 t2 t3 t4 t5 t6 t

(90- 1) y
VC b
VS VS VS
x
a t
-VS

IV V
VT1 Mode I II III
Ton b
VS
a
t
tC

VO b (VS-VC)
VS a
t

VTA y
b
VS tC1 x VS
a t
t=0
T1 t1t2 t3 t4 t5 t6 T
on TATA T1 D1 FD D2 FD off
onoff off off on off T1 on
D2 D1
on on
Fig. Current and voltage waveforms for current-commutated chopper

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 This chopper, developed by Hitachi Electric Fig : Differential Operating modes of
Company, Japan, is widely used in traction load-commutated chopper
cars. The merits of this chopper are as
under: Merits
i) Commutation is reliable so long as the i) It is capable of commutating any
load current is less than the peak amount of load current.
commutating current Icp. ii) No commutating inductor is required
ii) Capacitor is always charged with the that is normally costly, bulky and noisy
correct polarity. iii) As it can work at high frequencies in the
C order of kHz, filtering requirements are
=
i c Vs sin ω=
0t Icp sin ω0 t minimal.
L

Vs
C
= xI0 Demerits
L i) Peak load voltage is equal to twice the
Icp supply voltage. This peak can however
x= be reduced by filtering.
I0
ii) For high-power applications, efficiency
1 1 may become low because of higher
CVc2 = LI02
2 2 switching losses at high operating
L frequencies.
Vc = I0 iii) Freewheeling diode is subjected to
C
twice the supply voltage.
L iv) The commutating capacitor has to carry
Vcp= Vs + I0
C full load current at a frequency of half
the chopping frequency.
3.4.5 LOAD-COMMUTATED CHOPPER v) One pair of SCRs should be turned on
only when the other pair is
commutated. This can be done by
sensing the capacitor current that is
alternating.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 ig1, ig2

t
Ig3, ig4

t
iO
IO
t

VC VS

2VS 2VS 2VS

VO

t
T

iC
IO
Ton -IO t

ifd
IO
t

iT1,iT2
IO

T3,T4 FD t

iT3,iT4
FD
IO
t

VT1,VT2
tC
VS
t
-VS
VT3,VT4
tC
VS
-VS
t
0
t1 t2 t3
Modes I t4
II III
Fig. Voltage and current waveforms for a load-commutated chopper

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 GATE QUESTIONS

Q.1 A step down chopper is operated in

the continuous conduction mode in
steady state with a constant duty
ratio D. If V0 is the magnitude of the
dc output voltage and if Vs is the
magnitude of the dc input voltage,
the ratio V0 /Vs is given by a) 0.48A b) 1.2 A
a) D b) 1 − D c) 2.4 A d) 1 A
c)
1
d)
D [GATE-2003 ]
1− D 1− D
[GATE-2002] Q.4 Figure shows a chopper operating
from a 100 V dc input. The duty
Q.2 In the chopper circuit shown in ratio of the main switch S is 0.8. The
figure, the input dc voltage has a load is sufficiently inductive so that
constant valueVs . The output voltage the load current is ripple free. The
V0 is assumed ripple free. The average current through the diode D
switch S is operated with a under steady state is
switching time period T and a duty
ratio D. What is the value of D at the
boundary of continuous and
discontinuous conduction of the
induction current iL ?
a)1.6 A b) 6.4 A
c) 8.0 A d) 10.0 A
[GATE-2004 ]

Q.5 Figure shows a chopper. The device

S1 is the main switching device. S2 is
the auxiliary commutation device.
S1 is rated for 400 V, 60 A. S2 is
Vs 2L rated for 400 V, 30 A. The load
a) D = 1 − b) D = current is 20 A. The main device
V0 RT
operates with a duty ratio of 0.5.
2L RT The peak current through S1 is.
c) D = 1 − d) D =
RT L
[GATE-2002 ]

Q.3 A chopper is employed to charge a

battery as shown in figure. The
charging current is 5A. The duty
ratio is 0.2. The chopper output a) 10 A b) 20 A
voltage is also shown in figure. The c) 30 A d) 40 A
peak to peak ripple current in the [GATE-2004]
charging current is

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.6 The given figure shows a step-down The average voltage across the load
chopper switched at 1 kHz with a and the average current through the
duty ratio D=0.5. The peak-peak diode will respectively be
ripple in the load current is close to a) 10 V, 2A b) 10 V, 8A
c) 40 V, 2A d) 40 V, 8A
[GATE-2008]

Q.10 In the chopper circuit shown, the

main thyristor (TM ) is operated at a
a)10 A b) 0.5 A duty ratio of 0.8 which is much
c)0.125 A d) 0.25 A larger the commutation interval. If
[GATE-2005 ] the maximum allowable reapplied
dv/dt on ( TM ) is 50V / μs , what
Statement for common data 7 and 8
A voltage commutated chopper operating should be the theoretical minimum
at 1 kHz is used to control the speed of dc value of C1 ? Assume current ripple
motor as shown in figure. The load current through L0 to be negligible.
is assumed to be constant at 10A.

Q.7 The minimum time in µsec for which a) 0.2μF b) 0.02μF

the SCR M should be ON is c) 2μF d) 20μF
a) 280 μs b) 140 μs [GATE-2009 ]
c) 70 μs d) 0 μs
[GATE-2006 ] Q.11 In the circuit shown, an ideal switch
S is operated at 100 kHz with a duty
Q.8 The average output voltage of the ratio of 50%. Given that ∆ic is 1.6 a
chopper will be peak-to-peak and i0 is 5 A dc, the
a) 70 V b) 47.5 V peak current in S is
c) 35 V d) 0 V
[GATE-2006 ]

Q.9 In the circuit shown in the figure,

the switch is operated at a duty
cycle of 0.5. A large capacitor is
connected across the load. The a) 6.6A b) 5.0A
inductor current is assumed to be c) 5.8A d) 4.2A
continuous. [GATE-2012 ]

Common Data for Questions 12 and 13

In the figure shown below, the chopper
feeds a resistive load from a battery source.
MOSFET Q is switched at 250 kHz, with a

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 duty ratio of 0.4. All elements of the circuit Q.15 A step-up chopper is used to feed a
are assumed to be ideal. load at 400 V dc from a 250 V dc
source. The inductor current
is continuous. If the ‘off’ time of the
switch is 20 ms, the switching
frequency of the chopper in kHz is
_____.
Q.12 The average source current (in [GATE-2014]
Amps) in steady-state is
a) 3 / 2 b) 5 / 3 Q.16 In the following chopper, the duty
c) 5 / 2 d) 15 / 4 ratio of switch S is 0.4. If the
[GATE-2013] inductor and capacitor are
sufficiently large to ensure
Q.13 The PEAK-TO-PEAK source current continuous inductor current and
ripple in Amps is
ripple free capacitor voltage, the
a) 0.96 b) 0.144
c) 0.192 d) 0.288 charging current (in Ampere) of the
[GATE-2013] 5 V battery, under steady-state,
is______
Q.14 Figure (i) shows the circuit diagram
of a chopper. The switch S in the
circuit in figure (i) is switched such
that the voltage vD across the diode
has the wave shape as shown in
figure (ii). The capacitance C is large
so that the voltage across it is [GATE-2015]
constant. If switch S and the diode
are ideal, the peak to peak ripple (in Q.17 A self commutating switch SW ,
A) in the inductor current is ______. operated at duty cycle δ is used to
control the load voltage as shown in
the figure.

Under steady state operating

conditions, the average voltage
across the inductor and the
capacitor respectively, are

[GATE-2014]

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 1 output voltage is ripple-free. The
(a) VL = 0 and VC = Vdc
1− δ value of R (in Ohm) that will make
δ 1 the inductor current (iL) just
(b) VL = Vdc and VC = Vdc
2 1− δ continuous is ______.
δ
(c) VL = 0 and VC = Vdc
1− δ
δ δ
(b) VL = Vdc and VC = Vdc
2 1− δ
[GATE-2015]
[GATE-2015]

Q.18 For the switching converter shown

Q.20 A buck converter, as shown in
in the following figure, assume
Figure (a) below, is working in
steady-state operation. Also assume
steady state. The output voltage and
that the components are ideal, the
the inductor current can be assumed
inductor current is always positive
to be ripple free Figure (b) shows
and continuous and switching
the indicator voltage VL during a
period is T5. If the voltage VL is as
complete switching interval.
shown, the duty cycle of the switch S
Assuming all devices are ideal, the
is______
duty cycle of the buck converter
is___________.

[GATE-2015]
[GATE-2016]
Q.19 A buck converter feeding a variable
resistive load is shown is the figure. Q.21 A buck-boost DC – DC converter,
The switching frequency of the shown in the figure below, is used to
switch S is 100 kHz and the duty convert 24V battery voltage to 36V
ratio is 0.6. The output voltage V0 is DC voltage to feed a load of 72W. it
36 V. Assume that all the is operated at 20KHz with an
components are ideal, and that the inductor of 2mH and output

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 capacitor of 1000μF. all devices are 2 3 2 3
(a) ≤ D≤ (b) ≤ D≤
considered to be ideal. The peak 3 5 3 4
voltage across the solid-state switch 1 2
(c ) 0 ≤ D ≤ 1 (d ) ≤ D ≤
(S), in volt is _______. 3 3
[GATE-2017]

Q.24 In the circuit shown all elements are

ideal and the switch S is operated at
10 kHz and 60% duty ratio. The
[GATE-2016]
capacitor is large enough so that the
ripple across it is negligible and at
Q.22 A DC - DC boost converter, as shown steady state acquires a voltage as
in the figure below, is used to boost shown. The peak current in amperes
360V to 400V,at a power of 4kW. All drawn from the 50 V DC source is
devices are ideal. Considering _____. (Give the answer up to one
continuous inductor current, the decimal place.)
rms current in the solid state switch
(S), in ampere is _______

[GATE-2017]
[GATE-2016]
Q.25 The figure shows two buck converters
Q.23 The input voltage VDC of the buck –
connected in parallel. The common
boost converter shown below varies
input dc voltage for the converters
from 32V to 72V.Assume that all
has value of 100 V. The converters
components are ideal, inductor
have inductors of identical value. The
current is continuous, and output
voltage is ripple free. The range of load resistance is 1 Ω . The capacitor
duty ratio D of the converter for voltage has negligible ripple. Both
which the magnitude of the steady – converters operate in the continuous
state output voltage remains conduction mode. The switching
constant at 48V is frequency is 1 kHz, and the switch
control signals are as shown. The
circuit operates in the steady state.
Assume that the converters share the
load equally, the average value of is1 ,
the current of switch S1 (in ampere),
is ______ (up to 2 decimal places).

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 [GATE-2018]

ANSWER KEY:
1 2 3 4 5 6 7 8 9 10 11 12 13
(a) (c) (a) (a) (d) (c) (b) (b) (c) (a) (c) (b) (c)
14 15 16 17 18 19 20 21 22 23 24 25
2.5 31.2 1 (a) 0.75 2500 0.4 60 3.5 (a) 40 25

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 EXPLANATIONS

Q.1 (a) Imx

Vo = DVs = Ldi L [ I
∫= mx − I mn ]
0
V
or o = D = L∆
Vs
Where ∆| = peak to peak ripple
current.
Q.2 (c) equating A1 and A
A1 = A 2
Q.3 (a)
⇒ 48 × 200 ×10−6 = L∆|
=20 ×10−3 × ∆
∆ = 0.48A

Q.4 (a)

During Ton ,
Voltage across inductor
VL = 60 − 12 − 48V During the period TON chopper is on
Area under VL − t curve during, and load voltage is equal to source
voltage (Vs = 100 V). During the
Ton
interval TOFF , chopper is off, load
A1 = VL Ton current (I0 ) flows through the diode
=48 × 200 ×10−6 …(i) as result load voltage is zero during
Current through inductor, TOFF .
=
at t 0= is I0 I mn and Average load voltage
TON
=
at t T= on is I 0 I mx = V0 = Vs αVs
TON + TOFF
So, area under VL − t curve
Ton
= 0.8 ×100V
V0 = 80V
A2 = ∫ LV dt
0
L
Average load current
Ton
di V0 80
= = = 8A
= ∫ dt dt
0
I0
R 10

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 As load current is ripple free, so
average diode current (b)Q.7
1
T
( T − TON ) I Initially, main thyristor (m) and
=ID = ∫
T TON
I0 dt
T
0 auxiliary thyristor (A) are off and
capacitor is assumed charged to
I D= (1 − α ) I0 voltage V with upper plate positive.
= (1 − 0.8) × 8 = 1.6A . When ‘m’ is turned on at t = 0,
source voltage V is applied across
load and load current Io begins to
Q.5 (d)
flow which is assumed to remain
Initially main thyristor (S1) and
constant.
auxiliary thyristor (S2 ) are off and
With ‘m’ ON at t = 0, another
capacitor is assumed charged to
oscillatory circuit consisting of C, m,
voltage Vs with upper plate positive.
L and D is formed where the
When S1 is turned on, source voltage
capacitor current is given by
Vs is applied across load and load
C
current I0 begins to flow which is =i c V= sin ω0 t I p sin ω0 t
assumed to remain constant. With L
S1 ON another oscillatory circuit
consisting of C, S1 , and L is formed
where the capacitor current is given
by
C
i c = Vs sin sin ω0 t
L
So current through S1,
when ω = 0t π,i
= 0.
Is1= I0 + i c c

π
C Between, 0<t< ,i T1 =I0 +I psinω0 t
= I0 + Vs sin sin ω0 t ω0
L capacitor voltage charges from
Peak value of + Vs to − Vs sinusoidally and the
C lower plate becomes positive. At
Is1= I0 + Vs
L ω0 t = π,i c = 0i ,i T1 = I0 andVc = −Vs .
2 ×10−6 At t1 , thyristor A is turned on and
=
20 + 200 =
40A .
200 ×10−6 capacitor voltage V applies a reverse
voltage across thyristor in and SCR
Q.6 (c) ‘m’ is turned off. The load current is
1 not carried is now carried by C and
=
Here, T = 10−3 sec SCR A.
1×10 3

L 200mH So, minimum time for which SCR ‘m’

T=a = = 40msec should be ON.
R 5 π
Ripple Tmin = =π LC
ω0
Vs  (1 − e )(1 − e − (1−α)T/Ta ) 
− αT/Ta

=   = π 2 ×10−3 ×1×10−6
R  1 − e − T/Ta 
 = 140μs .
V 100
( ∆I )max = s = Q.8 (b)
4fL 4 ×10 × 200 ×10−3
3

= 0.125A .

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 TON + 2t cm  The circuit shown in the figure is a
( V0 ) = Vs   step down chopper therefore,
 T 
average output voltage,
CVs 1×10−6 × 25φ
where =
t cm = V0 = αVs
I0 1φ
⇒ V0 = 0.8 ×100 = 80V
=( V0 )min Vs ( TON )min + 2t cm  f V0 80
=
Io = = 10A
= 250 140 ×10−6 × ( 2 × 25 ×10−6 )  R 8
(output current is ripple free)
× (1×103 ) =47.5V At t = 0, capacitor is charged upto Vs
with right plate positive. Now, TA is
Q.9 (c) turned on immediately after TA is
on, capacitor voltage Vs applies a
reverse voltage across Tm and Tm is
turned off.
So VT m = Vc Capacitor voltage
Maximum allowable reapplied
dV/dT on Tm is 50V / μs
dVc dVT m
= = 50V / μs
dt dt
dV
C c = Io
dt
From eq. (i)
 V
C ×  50  = 10
When switch in ON,  μs 
=V0 0= and i D 0 ⇒C= 0.2μs .
Switch is OFF, V0 = Vs and
Q.11 (c)
iD = IL
∆i c
T Peak current = Io +
Due cycle= α= ON= 0.5 2
T 1.6
The circuit shown in the figure is =+
5 =5.8A .
2
step up chopper and for step up
chopper, average output voltage,
Q.12 (b)
V
V0 = s As it is a boost converter, average
1− α current through capacitor is zero.
=V0 = 40V
20 When Q is ON, IC = −Io
1 − 0.5 Ic= Is − Io
Average current through diode
T ∴ Average through capacitor
1 I
=ID ∫ I L dt L ( T − TON )
= =− ( Io ) ION + ( Is − Io ) TOFF =0
T TON T
( −Io ) DT + ( Is − Io )(1 − D ) T =0
I D I L (1 − α )
=
− I o D + Is − Is D − I o + I o D =
0
= (1 − 0.5) × 4
= 2A . ⇒ Io = (1 − D ) Is
Io
or Is =
Q.10 (a) (1 − D )

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 Vo Vs Q.15 (31.2)
= =
R (1 − D ) R (1 − D )2 As step up chopper
12 5
= = A.
20 (1 − 0.4 )
2
3

Q.13 (c)
Here, Isource = Inductor current
dI
QV=L s In step-up chopper output voltage is
dt
TON max
given by
V
L ∫0 ∫ dIs
⇒ dt = Vs
Vo =
min
1−α
V
⇒
TON =Is max − Is min TON
L where α is duty cycle α =
T
= ripple source current
Vs 250
⇒ TON = D.T. 1−α = =
Vo 400
∴ ripple source current
V 5
= (D.T.) 1−α =
⇒ α = 3/8
L 8
12 1 TON 3
= −6
× 0.4 × So, =
100 ×10 250 ×103 T 8
= 0.192A . T − TOFF 3
=
T 8
Q.14 (2.5)
We have the chopper circuit as T 3
1 − OFF =
T 8
TOFF 5
= =where, TOFF 20 s
T 8
1
and T =
fHz
Since, the circuit is a buck regular. So, So, f × 20 × 10−6 =
5
we have 8
Vo = Vs × α 5
= f = 31.2 kHz
8 × 20 × 10−6
0.05
= 100 ×
0.1
= 50 V Q.16 (1)
Duty ratio of switch S is
Therefore, peak to peak inductor
TON
ripple current is obtained as = 0.4
T
V × ∆t
∆I = o We have to determine the charging
L current of 5V battery.
50 × 0.05 ( m sec )
= During TON, circuit looks like
1mH
= 2.5 A

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 For this condition, diode is ON, and
we have
V=
L Vdc − V0

So, voltage across capacitor is = 20 V

Again, during TOFF circuit looks like

Hence, the average inductor voltage is

= Vdc × δ + ( Vdc − V0 ) (1 − δ )
= Vdc (δ + 1 − δ ) − V0 (1 − δ )
= Vdc ⋅ 1 − V0 (1 − δ )
Voltage across capacitor = 0 V
Vdc
So, average output voltage is = Vdc ⋅ 1 − (1 − δ )
V0 = αVs = 0.4 × 20 = 8 V (1 − V0 )
V0 − E 8 − 5 =0V
=
I0 = = 1A
R 3

Q.17 (a) Q.18 (0.75)

We have the switching converter as
Given circuit is

This is boost chopper, so output

voltage across capacitor is
Vdc
V0 =
1− δ
Now, we obtain the average voltage
across inductor.
CASE I : When SW is ON
For this condition, diode is OFF, and
all Vdc is applied across VL.
When switch is ON, we have
VL = Vin = 15 V
When switch is OFF, then
VL = Vin − Vo
or -45 = 15 − Vo
or Vo = 60 V
CASE 2 : When SW is OFF

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 So, this is a step-up chopper, and Peak voltage across switch (VS ) peak = 24 +
therefore we have 36.03V = 60.03V
V
Vo = s Ans : 60.03
1−α
15 Q.22 (3.51)
or 60 =
1−α
Vdc
Hence, α = 0.75 Output voltage, V0 =
1− D
Q.19 (2500) 360
 1−α  400 =
Lc= L=  1− D
R
 2f  D = 0.1
 1 − 0.6  P0 = V0 I0
5x10−3 =  3 
R
 2 x100 x10  4000 = 400 × I0
=
R 2.5k Ω
I0 = 10A
Q.20 (0.4)
Sol: ( I ) avg = =
L
I
1− D
0
=
10 10
1 − 0.1 0.9
A

TON Period: VL = Vg − Vo = 30 V _(1)

( IL ) (I ) 2 + ( I L ripple )
2
= L avg
Rms Rms
TOFF period: VL = − Vo = − 20V
∆IL
By solving both the equations (I )L ripple Rms
2 3
=
Vg − 20 = 30
By neglecting ripple current, I L(ripple rms) = 0
Vg = 50V
Vo = DVg
( I=
) (=
I )
L Rms L avg
10
0.9
A

20 = D (50) (ISW) Rms = D ( IL )

Rms
2
D = = 0.4 =
10
0.1 ×= 3.513A
5 0.9
Ans : 3.51
Q.21 (60)

Load power, P0 = V0 I0 = 72W Q.23 (a)

72 In Buck – Boost converter, output
=
I0 = 2A D
36 voltage V0 = Vdc
D D 1− D
V0= × Vdc ⇒ 36= × Vdc
1− D 1− D 48 =
D
Vdc
I0 1− D
Ripple voltage, ∆V = . TON 48 − 48 D = DVdc
C
2 × 0.6 48
∆V=
ID
= 0 = 0.06 V D=
C f 10 × ( 20 × 103 )
−3 Vdc + 48
48 3
∆V 0.06 = = =
=
Vpeak ( Vo ) avg + 2
=
+
2
36.03V
Where Vdc 32 V .D
32 + 48 5

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 48 2 Q.25 (25)
=
When =
Vdc 70 V, D =
72 + 48 5 (i) Vs = 100 V
2 3
The duty ratio range = ≤ D ≤ (ii) Interleaved converters.
5 5 (iii)Load resistance =1 Ω
(iv) Switching frequency = 1 kHz
Q.24 (40) Case I : When S1 → ON, S2 → Open
V0 = Vs (As the average voltage
across inductor is zero at steady state)
Case II : When S2 → ON, S1 → Open
V0 = Vs (As the average voltage
across inductor is zero steady state)
Hence, V0 is always equal to Vs
V0 100
=
I0 = = 100 A
R 1
Since the load current is equal divided
in two inductive element. Hence,
I=
L1( avg )
I=
L 2( avg )
50 A
I S 1( avg ) = DI L1( avg ) and I S 2( avg ) DI L 2( avg )
T 0.5
Where, D = Duty ratio = ON = = 0.5
T 1
Hence,I S 1( avg ) = DI L1( avg ) = 0.5 × 50 = 25 A
I S 2( avg ) = DI L 2( avg ) = 0.5 × 50 = 25 A
Hence, the average value of switch
(S1) current is 25 A.

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 4 INVERTERS

4.1 INTRODUCTION

Inverter is a device that converts dc power

into ac power at desired output voltage &
frequency. Inverters are broadly classified
into two parts ie VSI & CSI.

c
VSI or VFI (voltage source Inverter or
voltage fed inverter) is one which has stiff
dc voltage source at its input terminals (ie
dc source with negligible impedence).
CSI or CFI (current source inverter or
current fed inverter) is one which has stiff
dc current source. The magnitude of the
output current from CSI is independent of
load. CSI does not require any feedback
diodes as well as commutation circuit The diodes used in antiparallel carry the
required is very simple & requires only load current when thyristors are OFF.
capacitors These are called “Feedback Diodes”. From
fig 4.1(b) O/P voltage for Half Bridge
 + Vs T
 2 0<t<
Inverter V0  2
−
 s V T
<t<T
 2 2
The fourier-series of V0 is given by
∞
2Vs
= V0 ∑ sin nωt
n =1,3,5 nπ

Simplerly from fig 4.2(b)

 + Vs T
 0<t<
V0 =  2 2
T −V
<t<T
2  s
∞
4Vs
4.2 SINGLE PHASE BRIDGE INVERTER
=
so V0 ∑
n =1,3,5 nπ
sin nωt

If load consist of R, L & C then impedance

1-φ HALF BRIDGE INVERTER offered to the voltage of frequency nω
 1 
In half bridge, T1 & T2 are made to conduct Zn = R + j  nωL −
 nωc 
alternatively for equal duration T/2. It
requires 3-point de supply see fig. This
2
 1 
difficulty can be overcome by the use of a ⇒ | Z= | R 2
+  n ω L − 
nωc 
n

full bridge inverter see fig.

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  1 
 nωL − nωL 
&phaseϕn = t an − 1 
 R 
 
so load current (for full wave)
∞
4 Vs
i0 ∑ sin(nωt − ϕn )
n =1,3,5 nπ | Z n |

0 0 0 0 0 0 0 0 0 0
600 120 180 240 300 360 60 120 180 240 300 360
0 0
0
Steps I II III IV V VI I II III IV V VI conducting
5,6,1 6,1,2 1,2.3 2,3,4 3,4,5 4,5.6 5,6,1 6,1,2 1,2.3 2,3,4 3,4,5 4,5.6 thyristors

vbo
vS/3 2vS/3 2π 3π
0
ωt

vbo
(a) 2vS/3
0
ωt
-2vS/3

vco
vS/3
0
ωt
vab=vca-vba
vS
0 0
120 120

-vS ωt
vbc=vba-vba

vS vS
(b) ωt

vca=vba-vba

ωt
-vS

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 4.3 3-φ BRIDGE INVERTER From fig ,
Vs Vs
V= V= *Z=
/2
As basic 3φ Inverter is a six-step bridge an cn
Z + Z/2 3
Inverter. It uses six thyristors. A step is Vs
defined as a change in the firing angle from Vbn = −
3
one thyristors to the next thyristor in
proper sequence. For one cycle 3600, Step Similarly for remaining steps, phase
would be of 600 voltages can be determined.
From fig the line voltage Vab
 π
To obtain 3φ balanced voltages at output Vab′ =
(θ) Vab  θ − 
 6
Vab, Vbc& Vca there are two modes of
V’ab wave is skew symmetric so contains
conduction thyristors.
only Sin terms
4.3.1 3φ 1800 MODE VSI

Each thyrister would conduct for 1800 (ie

half of the cycle)

As seen from fig from 00-600 ie during step-

1 Thyristors 1,5&6 are conducting. Let the ∞
4Vs nπ
load in fig 4.6 be star connected for the Vab (θ) = ∑ cos
n =1,3,5 nπ 6
sake of simplicity let us not show the
diodes.  π
as Vab =
(θ) Vab  θ + 
 6
Step-1 1,5,6 are conducting ∞
4Vs nπ  π
=so Vab ∑ cos sin n  ωt + 
n =1,3,5 nπ 6  6
 Zπ 
similarly V= bc Vab  θ − 
 3 
∞
2Vs
=& Vca ∑
n 6k ±1 nπ
=
sin nωt

K = 0,1, 2
rms value of nth component (n = odd) of
line voltage is
4Vs nπ
VLn = cos
2nπ 6
rms of fundamental
4Vs π
= VL1 = cos 0.78Vs
2π 6

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 rms of line (all components) VL = 0.82Vs
VL
phase voltage V= p = 0.47Vs
3
V
& (fundamental) Vp1 = L1
3

0
60

0 0 0 0 0 0 0 0 0 0

Steps 0
0 0
600 120 180 240 300 360 60 120 180 240 300 360
I II III IV V VI I II III IV V VI
conducting 6,1 1,2 2.3 3,4 4,5 5.6 6,1 1,2 2.3 3,4 4,5 5.6
thyristors
vab 0
120
vS/2
ωt
vba
vS/2
ωt

vca
1200

ωt
vab

ωt

vbc

ωt

vca
ωt

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 4.3.2 3φ 1200-MODE VSI Fourier analysis of line voltage:
∞
3Vs  π
Each Thyristor conducts for 120 (ie one-
0 = Vab ( θ) ∑
n 6k ±1 nπ
=
sin n  θ + 
 3
third of cycle) so only 2-thyristors conduct
rms of fundamental line voltage
for each step.
For step-I ie from 00-600 Thyrister 1 & 6 3Vs
=
VL1 = =
0.6752V 3Vp1
2π
s
conductsso,
&= VL = 3Vp 0.7071Vs

Voltage control in 1-φ inverters:

The various schemes to control the output
voltage of inverter are
a) External control of ac output voltage:
AC output voltage of inverter can be
controlled using AC voltage controller,
or using transformers at the output.
b) External control of dc input voltage:
It can be achieved using either Rectifier
(phase control) along with ac voltage
controlled or chopper.
c) Internal control of Inverter:
No additional components are required
like external control. Hence control is
done by adjusting ON/OFF periods of
switching device ie by controlling the
width of pulse using PWM (Pulse Width
Modulation) low order harmonies can
be minimized.

4.4 PWM INVERTERS

From fig
Vs V 4.4.1 SINGLE PULSE MODULATION:
Van = & Vbn = − s & Vcn =
0
2 2
Similarly for other steps.
(1) Fourier analysis of phase voltage:
∞
2Vs nπ  π
Van (θ) ∑ cos sin n  θ + 
n =1,3,5 nπ 6  6
θ) Van ( θ − 2π / 3)
Vbn (=
θ) Van ( θ + 2π / 3)
Vcn (=
rms value of fundamental voltage
2Vs π
=Vp1 = cos 0.3898Vs
2π 6
& rms of phase voltage
2 π /3 2
1  Vs  Vs
V=
p
π ∫0
  d=
 2 
θ = 0.4082Vs
6

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 Fig , where two pulses per last cycle,
located symmetrically.
Fourier analysis of 2-pulse modulation
gives
∞
8Vs nd
V0= ∑ sin nγ sin sin nωt
n =1,3,5 nπ 2
nth harmonic content
8Vs nd
= Von sin nγ sin
nπ 2
from fig 4.14(b) it can be seen
π − 2d d
Fig (a) shows O/P voltage of 1-φ inverter, = γ +
the width of the pulses in each half cycle is N N
π rud. If by proper switching of thyristers where 2d→total PW
this pulse width is modulated to 2d located N→no of pulses per half cycle
symmetrically. Fourier analysis of rms value of O/P voltage
modulated wave shows that Vor = Vs
2d
∞
4Vs nπ π
V0 ∑ sin sin nωt
n =1,3,5 nπ 2
4Vs 4.4.3 SINUSOIDAL-PHASE MODULATION
fundamental component V01 = sin d (SIN M)
π In sin M technique there are several pulses
where nth harmonic per half cycle like MPM but each pulse
4Vs
Von = sin nd width is not equal as that in MPM, in sin
nπ M, the pulse width is a sinusoidal function
rms value of O/P voltage of the angular position of the pulse see fig
2d 2d 4.15
=Vor = Vs2 Vs
π π

4.4.2 MULTIPLE-PULSE MODULATION

In MPM, there are several equilistant pulses

perhalf cycle.
γ+d
v0 2

vS
d d 3π/2 ωt
π/2 π
γ -VS
d d

(γ-d)
2

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 & (b) (d) for realizing sin M, a high
frequency triangular carrier wave Vc is
compared with a sinusoidal reference
wave Vr of designed frequency. If triangular
wave φ zero coincide with sinusoid no. of
fc
pulses/half cycle =
N −1
2f
V
Modulation index- MI = r
Vc
MI Controls the magnitude of the output
voltage.

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 GATE QUESTIONS

Q.1 A single-phase full bridge voltage

source inverter feeds a purely
induction load, as shown in figure.
When T1 , T2 , T3 , T4 are power
transistors and D1 , D2 , D3 , D4 are
feedback diodes. The inverter is
operated in square wave mode with
a frequency of 50 Hz. If the average
load current is zero, what is the time Vs φ φ
duration of conduction of each a) b) Vs
π π
feedback diode in a cycle? 2
φ Vs
c) Vs d)
2π π
[GATE-2002]

Statement for common data 3 and 4

An inverter has a periodic output voltage
with the output waveform as shown in
figure.

a) 5 msec b) 10msec
c) 20 msec d) 2.5 msec
[GATE-2001]

Q.2 Figure (a) shows an inverter circuit Q.3 When the conduction angle α =
with a dc source voltageVs . The 120° , the rms fundamental
semiconductor switches of the component of the output voltage is
inverter are operated in such a a) 0.78 V b) 1.10 V
manner that the pole voltage c) 0.90 V d) 1.27 V
V10 and V20 are as shown in figure [GATE-2003]
(b) what is the rms value of the
pole-to-pole voltage V12 Q.4 With reference to the output
waveform given in figure, the output
of the converter will be free from
5th harmonic when
a ) α = 72° b) α = 36°
c) α = 150° d) α = 120°
[GATE-2003]

Q.5 The output voltage waveform of a

three-phase square-wave inverter
contains
a) only even harmonics
b) both odd and even harmonics

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 c) only odd harmonics voltage will be free from 3rd
d) only triple harmonics harmonic
[GATE-2005] c) Line-voltage will have 3rd
harmonic component but pole-
Q.6 A single-phase inverter is operated voltage will be freefrom 3rd
in PWM mode generating a single- harmonic
pulse of width 2d in the centre of d) Both pole-voltage and line-
each half cycle as shown in figure. It voltage will be free 3rd harmonic
is found that the output voltage is components.
free from 5th harmonic for pulse [GATE-2008]
width144° . What will be percentage
of 3rd harmonic present in the Q.9 A single phase voltage source
output voltage ( V03 / V01max ) ? inverter is feeding a purely
inductive load as shown in the
figure

a) 0.0 % b) 19.6 %
c) 31.7 % d) 53.9 %
[GATE-2006] The inverter is operated at 50 Hz in
180° square wave mode. Assume
Q.7 A single-phase voltages source that the load current does not have
inverter is controlled in a single any dc component. The peak value
pulse-width modulated mode with a of the inductor current i0 will be
pulse width of 150° in each half a) 6.37 A b) 10 A
cycle. Total harmonic distortion is c) 20 A d) 40 A
defined as [GATE-2008]
2
Vrms − V12
=
THD ×100 Q.10 The current source Inverter shown
V1 in figure is operated by alternately
When V1 is the rms value of the turning on thyristor pairs T1 , T2 and
fundamental component of the T3 , T4 . If the load is purely resistive,
output voltage. The THD of output the theoretical maximum output
ac voltage waveform is frequency obtainable will be
a) 65.65% b) 48.42%
c) 31.83% d) 30.49%
[GATE-2007]

Q.8 A 3-phase voltage source Inverter is

operated in 180° conduction mode.
Which one of the following
statements is true?
a) Both pole-voltage and line- a) 125 kHz b) 250 kHz
voltage will have 3rd harmonic c) 500 kHz d) 50 kHz
components [GATE-2009]
b) Pole-voltage will have 3rd
harmonic component but line- Q.11 A three-phase current source
inverter used for the speed control

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 of an induction motor is to be c) 212.2 V d) 282.8 V
realized using MOSFET switches as [GATE-2012 ]
shown below. Switches S1 to S6 are
identical switches. Q.13 If the dc bus voltage Vd = 300V , the
power consumed by 3-phase load is
a) 1.5 kW b) 2.0 kW
c) 2.5 kW d) 3.0 kW
[GATE-2012 ]

Statement for Linked Answer Questions:

14 & 15
The Voltage Source Inverter (VSI) shown in
The proper configuration for the figure below is switched to provide a 50
realizing switches S1 to S6 is Hz, square wave ac output voltage Vo
a) b) across an RL load. Reference polarity of Vo
and reference direction of the output
current io are indicated in the figure. It is
given that R = 3 ohms, L = 9.55mH.

c) d)

Q.14 In the interval when V0 < 0 and i0 >

[GATE-2011] 0 the pair of devices which conducts
the load
Common Data For Questions 12 and 13. current is
In the 3-phase inverter circuit shown, the (a) Q1,Q2
load is balanced and the gating scheme is (b) Q3,Q4
180° -conduction mode. All the switching (c) D1,D2
devices are ideal. (d) D3,D4
[GATE-2013]

Q.15 Appropriate transition i.e., Zero

Voltage Switching (ZVS)/Zero
Current Switching (ZCS)of the IGBTs
during turn-on/turn-off is
(a) ZVS during turn off
(b) ZVS during turn-on
(c) ZCS during turn off
(d) ZCS during turn-on
[GATE-2013]
Q.12 The rms value of load phase voltage
is Q.16 The figure shows one period of the
a) 106.1 V b) 141.4 V
output voltage of an inverter α

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 should be chosen such that
60 < α < 90 . If rms value of the
o o

fundamental component is 50V,

then a in degree is _____.

[GATE-2014]

Q.17 A single-phase voltage source

inverter shown in figure is feeding
power to a load.The triggering
pulses of the devices are also shown
in the figure.

[GATE-2014]

Q.18 The single-phase full-bridge voltage

source inverter (VSI), shown in
figure, has an output frequency of
50 Hz. It uses unipolar pulse width
modulation with switching
frequency of 50 kHz and modulation
index of 0.7 for Vm = 100 V DC, L =
9.55mH, C = 63.66 μF, and R = 5 Ω ,
the amplitude of the fundamental
component in the output voltage V0
(in volt) under steady-state is______
If the load current is sinusoidal and
is zero at 0, π, 2π ....., the node
voltage VAO has the waveform

[GATE-2015]

Q.19 The switches T1 and T2 in Figure (a)

are switched in a complementary
fashion with sinusoidal pulse width
modulation technique. The

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 modulating voltage νm(t) = 0.8 sin Q.21 A three - phase Voltage Source
( 200πt ) V and the triangular carrier Inverter (VSI) as shown in the figure
is feeding a delta connected resistive
( )
voltage vc are as shown in Figure
load of 30 Ω /phase. If it is fed from
(b). The carrier frequency is 5 kHz. a 600V battery, with 180°
The peak value of the 100 Hz conduction of solid - state devices,
component of the load current iL , ( ) the power consumed by the load, in
in ampere, is . kW, is ________.

[GATE-2017]

Q.22 A 3 – phase voltage source inverter

is supplied from a 600V DC source
as shown in the figure below. For a
star connected resistive load of
20 Ω per phase, the load power for
1200 device conduction in kW, is
______

[GATE-2017]
[GATE-2016]
Q.23 In the converter circuit shown
Q.20 A single-phase full-bridge voltage below, the switches are controlled
source inverter (VSI) is fed from a such that the load voltage ν0(t) is a
400 Hz square wave.
300 V battery. A pulse of 120o
duration is used to trigger the
appropriate devices in each half-
cycle. The rms value of the
fundamental component of the
output voltage, in volts, is
(a) 234 (b) 245
(c) 300 (d) 331
[GATE-2015]

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 The RMS value of the fundamental The desired fundamental frequency
component of νo(t) in volts is _____. of the load voltage is 50 Hz. The
[GATE-2017] switch control signals of the
converter are generated using
Q.24 A three – phase voltage source sinusoidal pulse width modulation
inverter with ideal devices with modulation index. M = 0.6. At
operating in 1800 conduction mode 50 Hz, the RL – load draws an active
is feeding a balanced star – power of1.44 kW. The value of DC
connected resistive load. The DC source voltage VDC. In volts is
voltage input is Vdc. The peak of the
fundamental component of the
phase voltage is
Vdc 2Vdc
(a) (b)
π π
3Vdc 4Vdc
(c) (d)
π π
[GATE-2017]

Q.25 The figure below shows a half – (a) 300 2 (b) 500
bridge voltage source inverter (c) 500 2 (d) 1000 2 s
supplying an RL –load with [GATE-2017]
 0.3 
R = 40 Ω and L =   H.
 π 

ANSWER KEY:
1 2 3 4 5 6 7 8 9 10 11 12 13
(a) (b) (a) (a) (c) (b) (c) (d) (b) (b) (a) (b) (d)
14 15 16 17 18 19 20 21 22 23 24 25
(d) (d) 77.15 (d) 49.5 10 (a) 24 9 198.06 (b) (c)

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 EXPLANATIONS

Q.1 (a) To eliminate 5th harmonic,

T 20 π 2π
Conduction time= = = 0, 2π ⇒ =
5d d 0, ,
4 4 5 5
= 5msec . 2π 4π
∴ Pulse width= 2d= α= 0, ,
5 5
Q.2 (b) = ( 0° , 72° ,144° ) .

(c) Q.5
The output voltage in both
180° and120° conduction mode can
be described by the fourier series as
follows:
In 180° conduction mode,
line output voltage
∞
4Vs nπ  π
= Vab ∑ cos sinn  ωt + 
n =1,3,5 nπ 6  6
…(i)
V= V10 − V20
12
line to neutral output voltage
φ ∞
2Vs
Vrms = Vs Va 0 = ∑ sinnωt …(ii)
π =n 6k ±1 nπ
where k = 0, 1, 2, …..
Q.3 (a) In 120° conduction mode
line to neutral output voltage
∞
2Vs nπ  π
= Va 0 ∑ cos sinn  ωt + 
n =1,3,5 nπ 6  6
…(iii)
(O/P) voltage line output voltage
∞
3Vs  π
∞
4Vs nπ
= V ab ∑
n 6k ±1 nπ
sinn  ωt + 
 3
V0 = ∑ sin nd sin sin nωt =

n =1,3,5 nπ 2 …(iv)
∴ R.M.S. value of fundamental where k = 0, 1, 2, …
component, n = 1 It is clear from eq. (i) to (iv), output
4Vs voltage wave form contains only
= sin d ×1 odd-harmonic.
2π
α = 120,∴ 2d = 120° , Q.6 (b)
∴d = 60° 4Vs
sin 3d
4Vs V03 3π
= sin 60 °
= = 19.6% .
2π ( V01 )max 4Vs
= 0.78V= s 0.78V . π

Q.4 (a)

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 Q.7 (c) It is clear from eq. (i) & (ii) both pole
voltage and line voltage will be from
3rd harmonic components.

Q.9 (b)

Pulse width = 2d = 150°

⇒d= 75°

π
+d
2
1
Vs2 d ( ωt )
π π∫
Vrms =
−d
2

2d 5 Load current increases linearly from

= Vs= V= 0.913Vs −IP to IP during 0 < ωt ≤ π .
π 6
s

Output voltage in fourier series. Where IP = Peak value of i0

∞ π π 1
V0 = ∑
4Vs nπ ⇒ t1 = = = sec
sin sinnd sin nωt
2 ω 2π50 100
n =1,3,5 nπ
At t = 0,i 0 = −I P and=t t1=
,i 0 I P
RMS value of fundamental
component of output voltage di
V0 = L
1  4Vs  dt
=V1 =  sin 75°  0.87Vs During 0 < ωt < π
2 π 
V= V= 200V
Total Harmonic Distortion, 0 s

2
− V12  I − (−IP ) 
=
THD
Vrms
×100 ⇒ 200 = 0.1 P 
V12  t1 − 0 
200
( 0.913Vs ) − ( 0.87Vs )
2 2
⇒ 2I P = × t1
×100 0.1
( 0.87Vs )
2
2000 1
IP = × = 10A .
= 31.83% 2 100

Q.8 (d) Q.10 (b)

Line voltage and pole voltage of The circuit shown in the figure is a
3 − ϕ VSI operated in 180° single phase bride auto sequential
conduction mode can be expressed commutated inverter (1-phase
by the fourier series as follows. ASCI)
∞
4Vs nπ  π Thyristor pairs T1 , T2 and T3 , T4 are
Vab ∑ cos sinn  ωt +  alternatively switches to obtain a
n =1,3,5 nπ 6  6
nearly square wave load current.
…(i) Two commutating capacitors, one C1
nπ 3π π in the upper half and the other C2 in
=
For n 3, cos = cos = cos = 0
6 6 2 the lower half are connected as
∞
2Vs shown.
Vab = ∑ sinωt …(ii)
n 6k ±1 nπ
=
Diodes D1 to D4 are connected in
series with each SCR to prevent the

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 commutation capacitors from In this case the +ve terminal of V0
discharging into the load. will be at higher voltage. i.e. V0 > 0
The inverter output frequency is and so
controlled by adjusting the period T i0 > 0 (i.e., it will be +ve). Now, when
through the triggering circuits of the Q1, Q2 goes to OFF condition we
thyristors. The theoretical maximum consider the second case.
output frequency obtainable Case II : When Q3, Q4 ON and Q1, Q2
1 1 OFF :
=
f max =
4RC 4 ×10 × 0.1×10−6 In this condition, -ve terminal of
= 250kHz applied voltage V0 will be at higher
potential i.e., V0 < 0 and since,
Q.11 (a) inductor opposes the change in
Device used in current source current so, although the
inverter (CSI) must have reverse polarity of voltage V0 is inversed,
voltage blocking capacity. current remains same in inductor
Therefore, devices such as GTOs, i.e. I0 > 0.
power transistors and power This is the condition when
MOSFETs cannot be used in a CSI. conduction have been asked.
So, a diode is added in series with In this condition (V0 > 0, I0 > 0)
the devices for reverse blocking. since, IGBT’s can’t conduct reverse
currents therefore current will flow
Q.12 (b) through D3,D4 until ID becomes
RMS value of line voltage negative.
1/2 Thus, D3 and D4 conducts.
 1 2π/3 
Vd =  ∫ Vs2 d ( ωt ) 
π 0  Q.15 (d)
2 Hence (D) is correct option .
= Vs
3 When Q3,Q4 is switched ON, initially
∴ RMS value of load phase voltage due to the reverse current it remain
VL 2 300 × 2 in OFF state and current passes
=
V p = =
Vs through diode. In this condition the
3 3 3 voltage across Q3 and Q4 are zero as
141.4V diodes conduct. Hence, it shows zero
voltage switching during turn-on.
Q.13 (d)
Power consumed by each resistor
Vp2 (141.4 )
2 Q.16 (77.15)
=
P = = 1000W
R 20 Given the output voltage of an
Total power consumed = 3P inverter as
= 3 kW.

Q.14 (d)

Hence (D) is correct option

We consider the following two
cases:
Case I : When Q1,Q2 ON

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 Since, the output voltage is an odd when S1 is off from 0 to θ, diode
function, so we compute only sine parallel to 53 conducts and
terms for the given period VDC
T VAO = −
v ( t ) sin ( ω0t ) dt
2
T ∫0
= Vmax 2
from θ angle < ( π − θ ) ,
From the output wave, we have VOC
S1 conducts VAO = −
T = 3600 = 2π 2
2π 2π Again from ( π − θ ) to ( θ ) ,
and ω0= = = 1
T 2π
VOC
So, we get the maximum value of diode conducts and VAO = −
2
fundamental component as
 α 100sin tdt − 180100sin t dt 
 ∫0 ∫α  Q.18 (49.5)
2  180 180 + α 
Vmax =  + ∫180−α 100sin tdt − ∫α 100sin tdt  The rms voltage at any harmonics ‘h’
2π  
+ ∫
360 + α 360
100sin tdt − ∫ 100sin tdt  is given as,
 180 +α 360 −α 
V  (Vˆ ) 
(1 − cos α ) − ( cos α + cos α ) +  (V0 ) h = d  A0 
100   2 Vd / 2 
(1 − cos α ) + ( −cos α − cos α ) 
= Hence,
π   (VˆA0 ) 
 where, ma = 
 − ( −1 + cos α )  Vd / 2 

100
= [ 4 − 8 cos α ] amplitude of fundamental voltage is
π h=1(fundamental)
400
= [1 − 2 cos α ] ∴V=
Vd
ma =
100
π 01 0.7x
2 2
Since, the rms value is
= 49.5 V
Vrms = 50 V
Vmax
= 50 Q.19 (10)
2
Substituting it in equation (i), we get (V )
01 max
Vdc
=( M.I )
2
=0.8 × 250 =200 V
400
(1 − cos α ) = 50 At fundamental frequency
π 2
1  50 × π 2  z = R 2 + X 2 = 122 + 162 = 20 Ω
or cos=α 1 − 
2 400  ( V )=
Thus, α = 77.15o
( I )=
01 max
01 max

z
200
= 10 A
20

Q.17 (d) Q.20 (a)

It is given that load current is Fundamental output voltage,

sinusoidal, so continuous 4Vdc nπ
=V01 sin nd x sin × sin nωt
conduction. nπ 2

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 (=
V )
01 rms
2 2Vdc
π
× sin d

2 2 × 300
= × sin 60 = 234 V
π
Q.21 (24) The given circuit is a signal phase
Output power, Po = 3 VL I L cos φ full bridge voltage source inverter.
VL2 2Vdc2
= = 4vdc
R 3R Output voltage. V0 (t) = sin nωt
nπ
2 × ( 600 )
2

= = 24 kW  (n 1,3,5,.....) 
3 × 10 Q squarewaveoutput 
 
Q.22 (9) The RMS value of fundamental
component of output voltage =
4Vdc 2 2Vdc 2 2 × 220
= = = 198 V
2π π π
Ans : 198

Q.24 (b)
The peak value of fundamental
2Vdc
phase voltage =
π
For 1200 conduction mode, rms Q.25 (c)
value of phase Vd  (VˆA0 ) 
(V0 ) h =  
V 600 2 Vd / 2 
VPh = Ph V = V
6 6
 (Vˆ ) 
Power delivered to load (PL ) where, ma =  A0 
2 Vd / 2 
 600  1
= 3×  × 20 V
 6 Vo1 peak = M . s
2
PL = 9000 W M → modulation index
PL = 9KW Vs
0.6Vs
Q.23 (198) =
Vo1 peak M= . 2
2 2 2
0.3
V01 = Vs
2
|=
Z1 | R 2 + (ω L) 2
2
 0.3 
= 402 +  2xπ x50x
 π 

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 =
402 + 302 = 50
1 ωL
=φ1 tan −= 36.869°
R
Active Power = V01 .I 01 cos φ1
V01
= V01 . cos φ1
| Z1 |
2
 0.3  1
=1.44x103  Vs  . .cos 36.869°
 2  50

=Vs =
2 x103 1000 2V
Vs
=
VDC = 500 2V
2

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 5 ELECTRICAL DRIVES

5.1 INTRODUCTION possesses higher efficiency because of

its high-frequency operation.
NASA was the first to develop a light weight ii) SMPS is less sensitive to input voltage
and compact switched power supply in the variations.
1960s for use in its space vehicles.
Subsequently, this power supply became The disadvantages of SMPS are as under:
popular and presently, annual production SMPS has higher output ripple and its
of SMPSs may be as high as 70 to 80% of regulation is worse
the total number of power supplies i) SMPS is a source of both
produced. electromagnetic and radio interference
In order to obtain almost negligible ripple due to high frequency switching.
in the dc output voltage, physical size of ii) Control of radio frequency noise
filter circuits required is quite large. This requires the use of filters on both input
makes the dc power supply inefficient, and output of SMPS.
bulky and weighty. On the other hand, The advantage possessed by SMPSs far
SMPS works like a dc chopper. By operating outweighs their shortcomings. This is
the on/off switch very rapidly, ac ripple the reason for their wide-spread
frequency rises which can be easily filtered popularity and growth. The standby
by L and C filter circuits which are small in batteries in the UPS system are either
size and less weighty. It may therefore be nickel-cadmium (NC) or lead-acid type.
inferred that it is the requirement of small NC batteries have the following
physical size and weight that has led to the advantages:
wide spread use of SMPSs. a) Their electrolyte is non-corrosive.
If the switching devices are power b) Their electrolyte does not emit an
transistors, the chopping frequency is explosive gas when charging.
limited to 40 kHz. For power MOSFETs, the c) NC batteries cannot be damaged by
chopping frequency is of the order of 200 overcharging or discharging, these have
kHz. As a result, size of the filter circuit and therefore longer life.
transformer decreases leading to
considerable savings. At such high The conventional form of the dc supply in
frequency, ferrite core is used in figure has a drawback, as ac supply is of
transformers. low frequency (say 50 Hz), so the
The overall size of SMPSs is dependent on harmonics or ripples in V2 see fig 5.1(b) are
its operating frequency. Use of power of lower frequency. 100, 150, 200 Hz etc to
transistors is limited to approximately 40 remove this ripples filter design is very
to 50 kHz. Above this operating frequency, difficult so it result in bulky & weighty
power MOSFETs are used up to about 200 supply as well as costly. The supply of fig
kHz. 5.1(a) is known as linear mode power
supply (LMPS).
The main advantages of SMPSs over
convention all in near power supplies are
as under:
i) For the same power rating, SMPS is of
smaller size, lighter in weight and

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 If a switching device is introduced between
In the figure SMPS is based on the chopping
Rectifier & filter see figure below. V2 is
principle. However between V3& V4 an
applied on a simple filter (like a choke coil
PWM controlled Inverter can also be used
or capacitor) result in V3. V3 is applied on
then the ac can be converted back into dc
switching device gives V4 see figure.
using a diode, which then can be applied to
the filters.
The switching device (Transistor,
MOSFET,SCR) is selected depending upon
the power rating or on the switching speed
required in SMPS. e.g. Power transistor are
used up to the switching frequency of 40
kHz while MOSFETS one used upto 200
kHz.

5.2 TYPES OF SMPS

The SMPS can be categorized into four types.

5.2.1 FLYBACK CONVERTER

Time period of V4 (periodic wave) is T4,

where as that of V3 is T2 it can be observed
easily.
T4<< T2
1 1
 
T4 T2
 f 4  f 2    (5.1)

From the equation 5.1, we can say that

frequency of ripples in V4 is very-very high
in comparison of V2 so now filter design
becomes quite easier. With the
introduction of switching device the power
supply of figure below is called as SMPS.

 Suitable for applications below 500 W

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  It uses on uncontrolled rectifier (eg V2 V
V2  V0 , V1   0
diode rectifier) a switching device (say N2 N2
MOSFET M1) Isolating transformer. N1 N1
 When M1 is ON, magnetizing current i i
flow in primary of transformer [b’coz im  Im  Im0 ,iD  m m
N2 a
diode is open hence secondary at no-
load] so flux established from m0m1 N1
 mi  m0 I
soiD  m1  m0
I
so   ve so voltages are
t t a a
induced with the polarity as shown with  If resistances & leakage reactance of
this polarity of V2, Diode D is open V2 is Transformer be negligible & if its
N N magnetizing inductance is L then
V2  2 V1  2 Vs V
N1 N1 im (t)  Im0  s 0  t  TON  (5.2)
 When M1 is turned off, as im reduces to L
zero so flux also reduces from As current rises during 0<t<TON so
 mo  m1 energy stored in transformer core so at
m1  m0so   ve t = TON
t t V
Hence voltage induced will be opposite im (TON )  Im1  Tm0  s TON  (5.3)
polarity as that were, when M1 was ON, L
with this polarity of V2 Diode D is ON & During M1 is off im decrease so energy is
as capacitor C is very large it gives delivered from core.
output V0= almost constant. Thus
energy stored in transformer core is V0 N1 0
delivered partly to load & portly to
im (t)  Im1   t  TON   TON  t  T  (5.4)
N2 L
charge the capacitor C. So at
V0 N1
Im1  (t  TON )
N2 L
att  TON  TOFF  T
VV 0
im  T   Im0  Im1  0 1  T  TON   (5.5)
N2 L
from equation 5.3 substitute
VN 1
Im1  0 1  T  TON 
N2 L
so load voltage
aV T aV 
V0  s ON  s
T  TON 1  
T
where   ON  duty cycleso O/P
T
 During ON period of M1 say form t = 0 to

N V0  a Vs
t = TON V1 = Vs, V2  2 Vs , Im0  Im1 1 
N1
ID = 0 during OFF period of M1 say from
t = TON to t = TON + TOFF

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 5.2.2 PUSH-PULL CONVERTER  Operation is some as discussed in Push-
pull. M1& M2 and hence D1& D2
conducts alternatively.
5.2.4 FULL-BRIDGE CONVERTER

 As shown in the above figure when M1

is turned-ON Vs is applied to the lower
half of the primary ie V1 = Vs so
 To make the SMPS, more suitable for
N
V2  2 Vs is induced in both the parts higher power application instead of
N1 one, two MOSFETS M1M2 of M3M4 are
of secondary but only D2 gets V0 = V2 = made to conduct simultaneously. It
N reduces the voltage stress on each
aVs where a  2
N1 MOSFET. That’s why full bridge
 When M2 is ON, upper half of the converter is suitable for high power
primary is applied Vs but in opposite applications above 750W.
direction as that of before. Now D2 gets  When M1M2-ON, V1=Vs &
forward biased which give V0 = aVs N
V2  2 Vs  aVs . D1 gets forward
 When M1 is ON, M2 is applied an open N1
circuit voltage VOC = 2Vs& vice-versa. So biased & hence V0 = aVs.
if is suitable for low voltage application  When M3 M4 are ON, V1=-Vs, V2 = -aVs,
only. D2 gets forward biased & hence V0 =
+aVs.
5.2.3 HALF BRIDGE CONVERTER
Advantage of SMPS over conventional
LMPS:

1) SMPS is of smaller size, lighter in weight

& of higher efficiency.
2) SMPS is less sensitive to input voltage
variation.
3) Filter design becomes simpler fer SMPS.

Disadvantages of SMPS over LMPS:

 As discussed above in Push-pull 1) Higher ripples

converter VOC = 2Vs, with above 2) Poor regulation
configuration in fig, when M1 is ON, M2 3) Due to high frequency switching SMPS
is subjected to VOC = Vs& Viu-Versa-so is source of electromagnetic & radio
Half bridge converter is suitable for interference.
high voltage application also.

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 4) Control of radio frequency noise 1) The inverter can be used to condition
requires the use of filters on both input the supply delivered to load
& output of SMPS. 2) Load gets protected from transistors in
the main ac supply
5.3 UNINTERRUPTIBLE POWER SUPPLIES 3) Inverter output frequency can be
maintained at the desired value.
Uninterruptible power supply (UPS)
system so as to maintain the continuity of
supply in case of power outages. Static UPS
systems are becoming popular up to a few
kVA ratings. Static UPS systems are of two
types: namely short-break UPS and no-
break UPS. In short-break UPS, the load
gets disconnected from the power source
for a short duration of the order of 4 to 5
ms. In no-break UPS, load gets continuous
uninterrupted supply from the power
source. These are now discussed briefly.
5.3.4 SPECIFICATIONS OF ON – LINE –
5.3.1 SHORT-BREAK UPS UPS
In situations where short interruption (4 to
5 ms) in supply can be tolerated, the short- S.No Parameter Specifications
break UPS shown in fig. in used. In this 1. Power rating 500 VA, 1kVa, 5kVA,
system, main ac supply is rectified, to dc. 50kVA etc.
This dc output from the rectifier charges 2. Output 230V ± 0.1%
voltage
the batteries and is also converted to ac by
3. Output 50 Hz ± 0.1 Hz
an inverter. frequency
4. Input voltage 230 V ± 15%
5. Output Sine wave
voltage
waveform
6. Power – > 3%
factor
7. Back – up 30 min. to 4 hours
time
8. Total < 3%
Harmonic
Distortion
(THD)
9. Efficiency > 85%
10. Potections (i)
provided Overvoltage/underv
oltage cutout
(ii) Overcurrent trip
with reset

5.4 CYCLOCONVERTER INTRODUCTION

5.3.2 NO-BREAK UPS
A cycloconverter is a type of power
When a no-break supply is required, the controller in which an alternating voltage
static UPS system shown in figure, at supply frequency is converted directly to
an alternating voltage at load frequency

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 without any intermediate d.c. stage. Ina a 1  2 2 
1/2

line-commutated cycloconverter, the Vor    Vm sin t d(t) 

supply frequency is greater than the load   
frequency. The operating principles were Vm  1  sin 2 
1/2

developed in the 1930s when the grid Vor        2 

2   
controlled mercury arc rectifier became
available. The techniques were applied in A load-commutated cycloconverter differs
Germany, where the three phase 50 Hz from the force-commutated and line-
supply was converted to a single phase a.c. commutated cycloconverters discussed so
2 far. In load-commutated circuit, the
supply at 16 hz for railway traction. thyristors are commutated by the reversal
3 of the load voltage. This implies that the
A cycloconverter can handle load of any
load circuit must have a generated emf that
power factor and allows power flow in both
should be independent of the source
the directions. The output voltage wave
voltage. The most usual example for such a
shape inevitably contains harmonic
load is wound-field or permanent-magnet
distortion components in addition to the
synchronous machine. For such loads, the
required sinusoidal component.
load frequency may be equal to, or greater
A device which converts input power at
than, the source frequency and for both
one frequency to output power at a
these case, thyristors will be naturally
different frequency with one-stage
commutated by the reversal of the load
conversion is called a cycloconverter. A
circuit emf.
cycloconverter is thus a one-stage
frequency changer.
The Basic Principle of Operation
i) Step-down cycloconverter
ii) Step-up cycloconverter
An equivalent circuit in Fig. It is a single-
phase cycloconverter whose input and
The application of cycloconverter includes
output are single phase a.c. The input a.c.
the following:
voltage of supply frequency 50 Hz is
1. Speed control of high-power ac drives
converted into lower frequency a.c. output.
2. Induction heating
There are mainly two configurations for
3. Static VAr Compensation
this type of cycloconverter, viz. centre-
4. For converting variable-speed
tapped transformer configuration and
alternator voltage to constant
bridge configuration.
frequency output voltage for use as
power supply in aircraft or shipboards.
Centre-Tapped Transformer Configuration
The general use of cycloconverter is to
provide either a variable frequency power
from a fixed input frequency power (as in
aircraft or shipboard power supplies or
wind generators).

5.5 SINGLE-PHASE TO SINGLE-PHASE

CIRCUIT-STEP-UP CYCLOCONVERTER

5.5.1 MID-POINT CYCLOCONVERTER

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 1/2
2  230  1   sin 60o  
Vor     
2   6 2 
 226.66V
Rms value of load current,
V 226.66
Ior  or   22.67A
R 10

b) For an output frequency of fo, each

1
converter conducts for   radians,
2fo
with a periodicity of 2π radians.
I
Rms valueof current for each converter I p  or
2
Power circuit of a single-phase to single- 22.67
phase cycloconverter employing a centre-   16.03A
tapped transformer. There are four 2
thyristors, namely, P1, N1, P2, and N2. Out of
the four SCRs P1 and P2 are responsible . c) Each thyristors handles rms current for
π radians with a periodicity of 2π rad.
I I
Rms valueof current for each thyristor p  or
2 2
22.67
  11.335A
2

d) Rms source current, Is = Ior = 22.67 A

Input VA = 230 × 22.67 VA, Load power
= 22.672 × 10
22.672 10
Input pf   0.9856lag.
230  22.67
Example
A single-phase bridge-type cycloconverter With R-L load
has input voltage of 230 V, 50 Hz and load
of R = 10 Ω. Output frequency is one-third
of input frequency. For a firing angle delay
of 30o, calculate
(a) rms value of output voltage
(b) rms current of each converter
(c) rms current of each thyristor and
(d) input power factor.

Solution
a) Here Vs = 230 V, Vm =

2  230V,R  10,   30o  . From
6
equation, we get

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 (a) Discontinuous load current
es
ePO eQO ePO eQO

0
t

(a)

Mean output
Voltage 1 f
f0= 4 S

0
t

P1 P2 P1 P2 N2 N1 N2 N1 P1 P2
Mean output
Voltage

0
t

(c) ( + ) (2 + ) (3 + ) (4 + )
(5 + )
Fig. Voltage and current waveforms for a single-pahse to single-phase
Cycloconverter with discontinuous load current

(b) Continuous load current

es
ePO eQO ePO eQO

0
t

(a)

Mean output
Voltage

1 f
f0= 4 S

0
t

(b)

P1 P2 P1 P2 N2 N1 N2 N1 P1 P2

M N

K L

A
0
J t
J J
B
( + ) (2 + ) (6p+a) (c)
(5p+a)

0
t

1 (d)
(5 + ) f0= 4 fS
(6 + )
Fig. Voltage and current waveforms for single phase to single phase
cycloconverter with continuous load current

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 5.6 THREE-PHASE HALF-WAVE CYCLOCONVERTERS

Three-Phase to Single-phase Cycloconverters

=0o
Fabricated output voltage Mean output voltage =90o

e0

S T
Q R U

V t
O P

M X Y
N W

Fig. Fabricated and mean output voltage waveform for a single phase cycloconverter
Mean output
voltage
=90o Fabricated =90o =90o
output voltage

e0

0
t

=180o

Inversion Inversion
Rectification Rectification Inversion
i0

0
t

Load Current in positive group Current in negative group

pf
angle
Fig. Voltage and current waveforms for a three-phase half-wave cycloconverter

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Three-Phase to Three-phase
Cycloconverters
(  /m  )
m
Edc 
2 ( /m ) 2Eph cos t dt (t)
m   
 2Eph   sin   cos 
   m
Edc has the max imum value Edo .
 m   
Edo  2Eph   sin  
    m
Edc  Edo cos 
 m   
2Eor  Edo  2Eph   sin  
   m
m   
Eor  Eph   sin  
    m
  m    
Eor  r. E ph   sin  
     m 
5.7 AC VOLTAGE CONTROLLER
The device which convert fixed AC directly
to variable AC without changing frequency
since AC voltage controllers are phase-
controlled devices, Thyristors & Triacs are
line commutated and as such no complex
commutation circuitry is required. The
main disadvantage is the introduction of
harmonics in the supply current and load
voltage waveforms.
5.7.1 1- PHASE CONTROLLED AC
VOLTAGE CONTROLLER

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 Two thyristors T1& T2 are connected in V1m  A12  B12
antiparallel during the half cycle T1 is fined
at firing angle , and during –ve half cycle V V
&V1(rms)  1m  m
T2 is fixed at the same firing angle . As 2  2
both +ve and –ve half of the o/p voltage &  sin 2   cos 2 1
2 2

current are identical so there is no dc   (  )  

component present in the o/p circuit turn  2   2 
off time provided tc = / rms of o/p
Vs  Vm sin       Vm 1  sin 2 
 Vor  (  )  
V0 0    2  &    2 2  2 
0 Power delivered to load
 else
& in the range 0     V2
P0  or
V  Vm sin   R
V0   s Supply VAs = Vs(rms)Is(rms) = Vs Ior
 0 else V
Fourier Analysis gives where Ior = or
R

V0   An sin nt  B
n 1,3,5
n cos nt V2 / R
input pf  * or
V
 or
Vs Vor / R Vs
Vm  Sin(n  1) Sin(n 1) 
where , An   1 sin 2 
  n  1 n 1  =  (   ) 
 2 
V  cos(n  1) 1 cos(n 1) 1
Bn  m   
  n 1 n 1

Integral cycle control:-

In several applications in which time
constant is very large, then control is
achieved by connecting the load to source
for several cycles & then disconnecting for
several cycles see fig
Number of on cycles = n
Number of off cycles = m
So rms of o/p
n
Vor  Vs  Vs 
nm
n
where   duty cycle
Fundamental component nm

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 5.8 COMPARISON BETWEEN presented to the a.c.
CYCLOCONVERTER AND D.C. LINK supply even with
unbalanced output
CONVERTER conditions.
5) Cycloconverter 5) The d.c. link
A comparison between cycloconverter and delivers a high quality converter, on the
d.c. link converter is given in a tabular form sinusoidal waveform at other hand, generates
as follows: low output frequencies a stepped waveform
since it is often which may cause a
preferable for very low nonuniform rotation
Cycloconverter D.C. Link Converter
speed applications. of an a.c. motor at
1) In a cycloconverter, 1) d.c. link converter very low frequencies
a.c. power at one has two power (<10 Hz). The
frequency is converted controlles and the full distorted waveform
directly to a lower output power is also causes system
frequency in a single converted in two instability at low
conversion stage. stages. frequencies.
2) Cycloconverter 2) d.c. link converter, 6) For reasonable 6)The frequency can
functions by means of on the other hand, power output and be varied from zero to
phase commutation requires forced efficiency, the output rated value. The upper
and no auxiliary forced commutation for the frequency is limited to frequency limit is
commutation circuits inverter even though 1/3 input frequency. divided by the device
are necessary. This the rectifier operates turn-off time.
results in a more on phase control
7. Requires larger (7) The d.c. link
compact power circuit principle.
number of thyristors converter requires
losses associated with
and its control circuitry only 12 thyristors and
forced commutation.
is more complex. This control circuits are
3) Cycloconverter is 3) This feature is is not justified for small less involved.
inherently capable of slightly difficult and is installations but it is
power transfer in involved to economical for units 20
either direction incorporate in a d.c. kVA and more.
between source and link converter.
8) Has very low power 8) The d.c. link
load. It can supply
factor, particularly at converter has high
power to loads at any
reduced output input power factor if
power factor and is also
voltages. diode rectifier is used .
capable of regeneration
With phase controlled
at full power over the
pf depends upon
complete speed range,
phase angle.
down to stand-still.
9) Extremely attractive 9) Extremely suitable
This feature makes a
for large power low for high frequency.
cycloconverter
speed reversing drives.
preferable for large
reversing and
deceleration. This type
of application occurs
principally in the metal
rolling industry.
4)Commutation failure 4) The d.c. link
causes a short circuit of converter cannot
the a.c. supply. But if an provide this feature.
individual thyristor
fuse blows off, a
complete shutdown is
not necessary and the
cycloconverter
continues to function
with somewhat
distorted waveforms. A
balanced load is

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 GATE QUESTIONS

Q.1 A three-phase semi-converter feeds a) 0.048kg m 2 b) 0.064kg m 2

the armature of separately excited c) 0.096kg m 2 d) 0.128kg m 2
dc motor, supplying a non-zero
[GATE-2004]
torque, for steady-state operation,
the motor armature current is found
Q.4 An electric motor, developing a
to drop to zero at certain instances
starting torque of 15 Nm, starts with
of time. At such instances, the
a load torque of 7Nm on its shaft. If
voltage assumes a value that is
a) equal is the instantaneous value the acceleration at start is 2rad / sec 2 ,
of the ac phase voltage the moment of inertia of the systems
b) equal to the instantaneous value must be (neglecting viscous and
of the motor back emf Coulomb friction)
c) arbitrary a) 0.25kg m 2 b) 0.25Nm 2
d) zero c) 4kg m 2 d) 4Nm 2
[GATE-2001] [GATE-2005]

Q.2 A single-phase half-controlled Q.5 A solar cell of 350 V is feeding

rectifier is driving a separately power to an ac supply of 440 V, 50
excited dc motor. The dc motor has Hz through a 3-phase fully
a back emf constant of 0.25 V/rpm. controlled bridge converter. A large
The armature current is 5A without inductance is connected in the dc
any ripple. The armature resistance circuit to maintain the dc current at
is 2 Ω. The converter is working 20 A. If the solar cell resistance is
from a 230 V, single phase ac source 0.5 Ω, then each thyristor will be
with a firing angle of 30° . Under this reverse biased for a period of
operating condition, the speed of the a) 125° b) 120°
motor will be c) 60° d) 55°
a) 339 rpm b) 359 rpm [GATE-2006]
c) 366 rpm d) 386 rpm
[GATE-2004] Q.6 A three-phase, 440 V, 50 Hz ac
mains fed thyristor bridge is feeding
Q.3 A variable speed drive rated for a 440 V dc, 15 kW, 1500 rpm
1500 rpm, 40 Nm is reversing under separately excited dc motor with a
no load. Figure shows the reversing ripple free continuous current in the
torque and the speed during the dc link under all operating
transient. The moment of inertial of conditions. Neglecting the losses,
the drive is the power factor of the ac mains at
half the rated speed is
a) 0.354 b) 0.372
c) 0.90 d) 0.955
[GATE-2007]

Q.7 A single phase fully controlled

converter bridge is used for
electrical breaking of a separately

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 excited dc motor. The dc motor load neglecting armature reaction, the
is respectively by an equivalent duty ratio of the chopper to obtain
circuit as shown in the figure. 50% of the rated torque at the rated
speed and the rated field current is

a) 0.4 b) 0.5
c) 0.6 d) 0.7
Assume that the load inductance is [GATE-2013]
sufficient to ensure continuous and
ripple free load current. The firing Q.9 A shunt-connected DC motor
angle of the bridge for a load current operates at its rated terminal
of I0 = 10 A will be voltage. Its no-load speed is 200
radians/second. At its rated torque
a) 44° b) 51°
° of 500 Nm, its speed is 180 rad/sec.
c) 129 d) 136°
The motor is used to directly drive a
[GATE-2008]
load whose load torque TL depends
on its rotational speed (in rad/sec),
Q.8 The separately excited dc motor in
such that TL = 2.78x ω r. Neglecting
the figure below has a rated
rotational losses, the steady-state
armature current of 20 A and a
speed (in radian/second) of the
rated armature voltage of 150 V. An
motor, when it drives this load
ideal chopper switching at 5 kHz is
is______.
used to control the armature
[GATE-2015]
=
voltage. =
If La 0.1mH, R a 1Ω ,

ANSWER KEY:
1 2 3 4 5 6 7 8 9
(b) (a) (a) (c) (d) (a) (c) (d) 178.8

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 EXPLANATIONS

Q.1 (b) Q.4 (c)

= E b + Ia R a
V Ts =Starting torque developed by
Ia = 0 , = 15N − m
the motor
= 7N − m
TL = Load torque
V = Eb .
Ta = Acceleration torque
Q.2 (a) = Ts − TL
= 15 − 7 = 8N − m
= α Acceleration − 2rad / sec 2
Ta = Iα
Ta
= =
I Moment of inertial
Back emf = E a = kφN α
or E a = k b N 8
= = 4kgm 2 .
where k b = Back-emf constant = 2
0.25 V/rpm
Average output voltage of 1- ϕ half Q.5 (d)
controlled rectifier = V Solar cell emf E = 350 V
Vm DC current Idc = 20A
=V (1 + cos α ) Solar cell resistance
2π
R cell = 0.5Ω
=
230 2
2π
(1 + cos 30° ) V0 =Voltage across inverter
⇒V= 96.6V = − ( E − Idc R cell )
E a = V − Ia R a = 96.6 − 5 × 2 = 86.6V = − ( 350 − 20 × 0.5 )
E a 86.6 = −340V
Speed= N= =
k b 0.25 The bridge acts as inverter,
= 346.4V Output voltage of 3 − φ fully
So, option (a) is closer to controlled bridge
346.4 V. 3V
V0 = ml cos α
π
Q.3 (a) 3Vml
Speed changes from -1500 rpm to cos α = −340
500 rpm in 0.5 sec. π
So angular acceleration 3 × 440 2 cos α
⇒ = −340
500 − (−1500) 2π π
= α × rad / sec 2

0.5 60 ⇒α= 125°

= 418.88rad / sec 2
Torque = T = 20 N-m Therefore, each thyristor will be
Ta = Iα reverse biased for a period of 55° .
Moment of inertia
Q.6 (a)
T 20
=
I = = 0.048kg m 2
α 418.88

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 V0 − 2I0 + 150 =
0
⇒ V0 =−150 + 2 ×10
= −130V
2V
⇒ m cos α = −130
π
2 × 2 × 230
For a separately excited dc motor ⇒ cos α =
−130
π
Back emf= E= V0 − Ia R a
a
⇒α= 129°
Since, losses are neglected R a can be
neglected Q.8 (d)
So, E a ≈ V0 V= E b + Ia R a
a
V0= E a= k a φN …(i) 150 = E b + 20 ×1
V0 ∝ N E b = 130V
At rated voltage For half the rated torque,
V0 = 440V and Ia = 10A
N = 1500rpm
Va= 130 + 10 ×1= 140
so, at half the rated speed.
140
N  =
D = 0.7
 = 750rpm  output voltage of the 200
2 
bridge (V0 ) is 220 V. Q.9 (178.8)
If Ia is the average value of armature
current rms value of supply current For the shunt connected dc motor,
will be TL = 2.78 xωr
2
Is = I a Under steady state, we have
3
Load torque = Rotated torque
Power delivered to the motor
P0 = V0 Ia 2.78 xωr = 500
Input VA to the thyristor bridge ∴ ωr =
178.8rad / sec
Sin = 3Vs Is
Input power factor
P0 V0 Ia 220 × Ia
= = = =
Sin 3Vs Is 2
3 × 440 × Ia
3
0.354

Q.7 (c)
Average output voltage of the
converter,
2V
V0 = m cos α
π
Load current= I= 0 10A
= E=
Back emf b 150V
Armature resistance= R= a 2Ω
Applying KVL

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 ASSIGNMENT QUESTIONS

Q.1 For an UJT employed for the the correct answer using the codes
triggering of an SCR, stand-off ratio given below the Lists:
η=0.64 and dc source voltage VBB is (V-input voltage, V0–output voltage,
20V. The UJT would trigger when D-Duty cycle & a-Transformer
the emitter voltage is ratio);
a) 12.8V b) 13.5V List-I List-II
c) 10V d) 5V A. Boost 1. V0 = VD
VD
B. Buck 2. V0 =
Q.2 A UJT used for triggering an SCR has 1 D
supply voltage VBB=25V. The V
intrinsic standoff ratio η=0.75. The C. Buck-Boost 3. V0 =
1 D
UJT will conduct when the bias
D. Isolated Buck- 4. . V0 = VD
voltage VE is a(1-D)
a) 25V b) ≥ 18.75V Boost
c) ≥ 19.35V d) 33.3V Codes:
A B C D
Q.3 A UJT relaxation oscillator circuit is a) 2 1 3 4
shown in figure. If the value of b) 3 1 2 4
timing resistor RT=470 KΩ and c) 2 4 3 1
CT=0.01 μF and intrinsic standoff c) 3 4 2 1
ratio is 0.7, the period and Q.6 The latching current in the circuit is
frequency of oscillation is 4mA. The minimum width of the
gate pulse required to properly turn
on the thyristor is

a) 6 μs b) 4 μs
a) 4.7 ms, 213 Hz c) 2 μs d) 1 μs
b) 5.65 ms, 177 Hz
c) 3.29 ms, 304 Hz Q.7 When two identical SCRs are placed
d) 6.71 ms, 149 Hz back to back in series with a load if
each is fired at 900, a d.c. voltmeter
Q.4 An SCR has half cycle surge current across the load reads
rating of 3000 A for 50Hz supply. 2
a)  peak voltage b) zero
One cycle surge current rating will π
be 1
a) 1500 A b) 2121.32 A c)  peak voltage d) None of these
π
c) 4242.64 A d) 6000 A
Q.8 A boost –regulation has an input
Q.5 Match List I (SMPS topology) with voltage of 5 V and the average
List II (output voltage) and select output voltage of 15 V.

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 The duty cycle is b) α>Ø and γ<π
3 2 c) α<Ø and γ=π
a) b)
2 3 d) α<Ø and γ>π
5 15
c) d) Q.14 A single phase voltage controller
2 2
feeds power to a resistance of 10Ω.
Q.9 A load resistance of 10Ω is fed The source voltage is 200V rms. For
through a 1-phase voltage controller a firing angle of 90o, the rms value of
from a voltage source of 200 sin 314 thyristor current in amperes is
t. For a firing angle delay of 90o, the a) 20 b) 15
power delivered to load in kW, is c) 10 d) 5
a) 0.5 b) 0.75
c) 1 d) 2 Q.15 A single-phase voltage controller is
connected to a load of resistance
Q.10 A load consisting of R=10Ω and 10Ω and a supply of 200 sin 314t
ωL=10Ω, is being fed from 230V, volts. For a firing angle of 90o, the
50Hz source through a 1-phase average thryristor current in
voltage controller. For a firing angle amperes is
delay of 30o, the rms value of load a) 10/π b) 10 2
current would be c) 5 2 /π d) 5 2
a) 23A b) 23/ 2 A
c) >23/ 2 A d) <23/ 2 A Q.16 A thyristor is triggered by a pulse
train of 5 KHz. The duty ratio is 0.4.
Q.11 A single phase voltage controller If the allowable average power is
feeds power to a resistance of 10Ω. 100W, the maximum allowable gate
The source voltage is 200V rms. For drive power is
a firing angle of 90o, the rms value of a) 50W b) 100 2 W
thyristor current in amperes is c) 150W d) 250W
a) 20 b) 15
c) 10 d) 5 Q.17 For a single-phase half-bridge,
amplitude of output voltage is V, and
Q.12 A single-phase voltae controller is the output power is P. Then their
employed for controlling the power corresponding values for a single
flow from 260 V, 50Hz source into a phase full-bridge inverter are
load consisting of R=5Ω and a) Vs, P b) Vs/2, P/2
ωL=12Ω. The value of maximum c) 2V, 4P d) Vs, 2P
rms load current and the firing angle
are respectively Q.18 A half wave SCR controlled circuit
a) 20 A, 0o with XL 50Ω conducts for 90o for an
b) 260/10.91 A, 0o applied voltage of 800V sinusoidal
c) 20A, 90o rms.If the SCR voltage drop is
d) 260/10.91A, 90o negligible, the power dissipated by
the load is
Q.13 In a single phase voltage controller a) 1800W b) 81W
with RL load, ac output power can c) 52.36W d) 0W
be controlled if
a) firing angle α>Ø(load phase Q.19 In the circuit shown in the figure
angle) and conduction angle γ=π L=5μH and C=20μF, C is initially
changed to 200V. After the switch S

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 is closed at t=0, the maximum value
of current and the time at which it Q.25 In a 1ϕhalf wave controlled rectifier
reaches this value are respectively if input voltage is 400 sin 314 t, the
a) 100A, 15.707 μs average output voltage for a firing
b) 50 A, 30μs angle of 600 is
c) 100A, 62.828μs 100 200
a) b)
d) 900 A, 31.414μs π π
300 400
Q.20 The fundamental ripple frequency of c) d)
π π
a six pulse circuit with supply
frequency 50 Hz is Q.26 In a 1ϕfull converter, for load
a) 100 Hz b) 200 Hz current I ripple free, average
c) 300 Hz d) 600 Hz thysistor current is
1 1
Q.21 Output voltage of a single-phase full a) I b) I
4 2
converter has peak value of 300 V
3
and average value of 120 V then c) I d) I
firing angle will be 4
a) 300 b) 510
c) 130 0 d) 1500 Q.27 In a 1ϕfull converter, number of
SCRs conducting during overlap:
Q.22 A voltage source 200 sin 314t is a) 2 b) 4
applied to a thyristor controlled half c) 6 d) 8
wave rectifier with resistive load of
50  . If the firing angle is 300 with Q.28 For an n-pulse rectifier, the rms
respect to supply voltage waveform, value of the ac current is related to
the average power in the load is the dc load current as
a) 90.6 watts b) 194 watts I
a) Irms = Id/n b) Irms  d
c) 60.8 watts d) 70.6 watts n
2
Q.23 In single-phase full-wave controlled c) Irms  Id d) Irms  Id

bridge rectifier, minimum output
voltage is obtained at conduction Q.29 In a single–phase semi converter,
angle………………..and maximum at with discontinuous conduction and
conduction angle………….. extinction angle <π, freewheeling
a) 00, 1800 b) 1800, 00 action takes phases for
c) 0 , 0
0 0 d) 1800, 1800 a)  b) π - 
c)  - π d) Zero degree
Q.24 In a single phase full converter
bridge, average output voltage is Q.30 In a 3-phase bridge rectifier fed
1 α-π/2
a)  Vm cos θdθ from the star connected secondary
π α+π/2 winding of a transformer, let the
1 α+π/2
b)  Vm cosθ dθ voltage to the neutral of the A-phase
π α-π/2 (phase sequence A, B, C) be Vm sin 
1 π+α t. At the instant when the voltage of
c)  Vm cosθ d θ
π α A-phase is maximum, the output
1 α+π voltage at the rectifier terminals will
d)  Vm cos θ dθ be
π 0

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Vm 3Vm Q.35 For a 3-phase bridge inverter in
a) b)
2  180o conduction mode, figure below,
the sequence of SCR conduction in
c) 1.5Vm d) 3 Vm
the first two steps, beginning with
the initiation of thyristor 1, is
Q.31 A single–phase full–bridge a) 6, 1, 2 and 2, 3, 1
converter with a free–wheeling b) 2, 3, 1 and 3, 4, 5
diode feeds an inductive load. The c) 3, 4, 5 and 5, 6, 1
load resistance is 15.53  and it has d) 5, 6, 1 and 6, 1, 2
large inductance providing constant
and ripple free d.c. current. Input to Q.36 In single-pulse modulation of PWM
converter is form an ideal 230 V, 50 inverters, third harmonic can be
Hz single phase source. For a firing eliminated if pulse width is equal to
delay angle of 60o, the average value a) 30o b) 60o
of diode currents is c) 120o d) 150o
a) 10 A b) 8.165 A
c) 5.774 A d) 3.33 A Q.37 In single-pulse modulation of PWM
inverters, fifth harmonic can be
Q.32 In a three- phase full wave a.c. to d.c. eliminated if pulse width is equal to
converter, the ratio of output ripple- a) 30o b) 72o
frequency to the supply – voltage c) 36o d) 108o
frequency is
a) 2 b) 3 Q.38 In single-pulse modulation of PWM
c) 6 d) 12 inverters, the pulse width is 120o.
For an input voltage of 220 V dc, the
Q.33 If the r.m.s. source voltage is V volts, r.m.s. value of output voltage is
the minimum and maximum values a) 179.63 V b) 254.04 V
of firing angle for a single-phase, c) 127.02V d) 185.04V
half-wave controlled rectifier,
supplying a load with a back e.m.f. of Q.39 In single-pulse modulation used in
40 volts are PWM inverters, Vs is the input dc
a) 0o and 180o voltage. For eliminating third
40 harmonic, the magnitude of rms
b)   sin 1 and1800 values of fundamental component of
2V
output voltage and pulse width are
40  40  respectively
c) α=sin -1 and  π-sin -1 .
2V  2V  a) (2 2 /π) Vs, 120o
 40  b) (4Vs/π), 60o
d) 0o and    sin 1 
 2V  c) (2 2 /π) Vs, 60o
d) (4Vs/π), 120o
Q.34 A single phase bridge inverter Q.40 In multiple-pulse modulation used
delivers power to a series connected in PWM inverters, the amplitude of
RLC load with R=2Ω, ωL=8Ω. For reference square wave and
this inverter-load combination, load triangular carrier wave are
commutation is possible in case the respectively 1V and 2V. For
magnitude of ωC in ohms is generating 5 pulses per half cycle,
a) 10 b) 8 the pulse width should be
c) 6 d) zero a) 36o b) 24o
c) 18o d) 12o

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.41 In multiple-pulse modlation used in a) 24V b) 33.94V
PWM inverters, the amplitude and c) 43.3V d) 48V
frequency for triangular carrier and
square reference signals are Q.46 A single – phase full – bridge voltage
respectively 4V, 6KHz and 1V, 1KHz. source inverter operating in square
The number of pulses per half cycle wave mode supplies a purely
and pulse width is respectively inductive load. If the inverter time
a) 6, 90o b) 3, 45o period is T, then the time duration
c) 4, 60o d) 3, 40o for which the feedback diodes
conduct in a cycle is
Q.42 In sinusoidal-pulse modulation used a) T b) T/2
in PWM inverters, amplitude and c) T/4 d) T/8
frequency for triangular carrier and
sinusoidal reference signals are Q.47 For a single phase, full-bridge
respectively 5V, 1KHz and 1V, 50Hz. inverter supplying power to a highly
If zeros of the triangular carrier and inductance load as shown above, the
reference sinusoid coincide, then correct sequence of operations of
the modulation index and order of switches and diodes is
significant harmonics are
respectively
a) 0.2, 9 and 11
b) 0.4, 9 and 11
c) 0.2, 17 and 19
a) S1-S4 – S3-S2 - S1-S4- S3-S2
d) 0.2, 19 and 21
b) D1-D4 – S1-S4 – D2-D3- S2-S3
c) S1-D3 – S1-S4 – S4-D2- D2-D3
Q.43 In an inverter with fundamental
d) S2-D4 – D4-D1 - D1-S3- S3-S2
output frequency of 50Hz, if third
harmonic is eliminated, then
Q.48 A single–phases, half-bridge inverter
frequencies of other components in
has input voltage of 48 VDC.
the output voltage wave, in Hz,
Inverter is feeding a load of 2.4.
would be
The r.m.s. output voltage at
a) 250, 350, 450, high frequencies
fundamental frequency is
b) 50, 250, 350, 450
2  48V 2  48V
c) 50, 250, 350, 550 a) b)
d) 50, 100, 200, 250  2
2  48V 48V
Q.44 In single pulse modulated PWM c) d)
 2 2
inverter, third harmonic, is
eliminated by making pulse width Q.49 A d.c. source is switched in steps to
equal to 1200, the eliminate fifth synthesize the three- phase output.
harmonic the pulse width be equal The basic three-phase bridge
to inverter can be controlled. The angle
a) 360 b) 720 through which each switch conducts
c) 1090 d) 1440 and at any instant the number of
swatches conducting simultaneously
Q.45 Full- bridge inverter is shown in the is respectively
above fig. The maximum rms output a) 120o and 02 b) 120o and 03
voltage ‘V0’ at fundamental c) 180 and 02
o d) 180o and 04
frequency is

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.50 The number of thyristors required VA rating of 36-SCR device to that of
for single-phaseto single-phase 18-SCR is
cycloconverter of the mid-point type a) ½ b) 1
and for three phase to three-phase c) 2 d) 4
3-pulse type cycloconverter are
respectively Q.56 Three-phase to 3-phase
a) 4, 6 b) 8, 18 cycloconverters employing 18SCRs
c) 4, 18 d) 4, 36 and 36 SCRs have the same voltage
and current ratings for their
Q.51 A 3-phase to single-phase component thyristors. The ratio of
converters device employs a 6-pulse powerhandled by 36-SCR device to
bridge cycloconverter. For an input that handled by 18-SCR device is
voltage of 200V per phase, the a) 4 b) 2
fundamental rms value of output c) 1 d) ½
voltage is
a) 600/πV b) 300 3 /πV Q.57 For type-A chopper, Vs is the source
voltage, R is the load resistance and
c) 300/πV d) 600 2 /πV
α is the duty cycle. The average
output voltage and current for this
Q.52 In a single – phase to single – phase
chopper are respectively
cycloconverter, if 1 and 2 are the
a) αVs, α.(Vs/R)
trigger angles of positive converter
b) (1-α)Vs, (1-α)Vs/R
and negative converter, then
c) Vs/α, Vs/αR

a) 1 + 2 = b) 1 + 2 = π d) Vs/(1-α), Vs/(1-α)R
2
3 Q.58 A chopper has Vs as the source
c) 1 + 2 = d) 1 + 2 = 2π
2 voltage, R as the load resistance and
α as the duty cycle. For this chopper,
Q.53 A cycloconverter is operating on a rms value of output voltage is
50Hz supply. The range of output a) αVs b)  . Vs
frequency that can be obtained
c) Vs/  d) 1   .Vs
with acceptable quality, is
a) 0-16Hz b) 0-32Hz
c) 0-64Hz d) 0-128Hz Q.59 For a chopper, Vs is the source
voltage, R is the load resistance and
Q.54 A 3-phase cycloconverter is used to α is duty cycle. RMS and average
obtain a variable –frequency single- values of thyristor currents for this
phase a.c. output. The single phase chopper are
a.c. load is220 V, 60 A at a power a) α.(Vs/R),  .(Vs/R)
factor of 0.6 lagging. The rms value b)  . (Vs/R),  .(Vs/R)
of input voltage per phase
c)  Vs/R, α Vs/R
required is
a) 376.2 V b) 311.12 V d) 1   .(Vs/R), (1- α)Vs/R
c) 266 V d) 220 V
Q.55 Three-phase to three phase Q.60 In dc choppers, per unit ripple is
cycloconverters employing 18 SCRs maximum when duty cycle α is
and 36 SCRs have the same voltage a) 0.2 b) 0.5
and current ratings for their c) 0.7 d) 0.9
component thyristor. The ratio of

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 Q.61 For type-A chopper; Vs, R, I0 and α varying the time ratio of the
are respectively the dc source chopper from
voltage, load resistance, constant a) Zero to units b) Unity to zero
load current and duty cycle. For this c) Zero to 0.5 d) 0.5 to Zero
chopper, average and rms values of
freewheeling diode currents are Q.67 A step up chopper is fed from a 220
V dc source to deliver a load voltage
a) α I0,  . I0 of 660 V. If the non-conduction time
b) (1-α) I0, 1   . I0 of the thyristor is 100 μs, the
c) α .(Vs/R),  .(Vs/R) required pulse width will be
a) 100 μs b) 300μs
d) (1-α) I0,  . I0
c) 200μs d) 660 μs
Q.62 A step-up chopper has Vs as the Q.68 In dc choppers, if Ton is the on-
source voltage and α as the duty period and f is the chopping
cycle. The output voltage for this frequency, then output voltage in
chopper is given by terms of input voltage Vs is given by
a) Vs(1+α) b) Vs/(1-α) a) Vs. Ton/f b) Vs. f/Ton
c) Vs(1-α) d) Vs/(1+α) c) Vs/f. Ton d) Vs. f. Ton

Q.63 When a series LC circuit is Q.69 A 3- phase wound rotor inductance

connected to adc supply of V volts motor is controlled by a chopper –
through a thyristor, then the peak controlled resistance in its rotor
current through thyristor is circuit. A resistance of 2 is
a) V. LC b) V/ CL connected in the rotor circuit and a
c) V. C / L d) V. L / C resistance of 4 is additionally
connected during OFF periods of the
chopper. The OFF period of the
Q.64 For the arrangement shown in
chopper is 4 ms. The average
figure, the circuit is initially in
resistance in the rotor circuit for the
steady state with thyristor T off.
chopper frequency of 200 Hz is
After thyristor T is turned on, the
26 24
peak thyristor current would be a)  b) 
a) 2A b) 22A 5 5
c) 40A d) 42A 18 16
c)  d) 
5 5
Q.65 In type-A chopper, source voltage is
100V dc, on period = 100 μs, off Q.70 For a step up d.c. – d.c. chopper with
period = 150 μs and load RLE an input d.c. voltage of 220 volts, if
consists of R = 2Ω, L=5mH, E=10V. the output voltage require is 330
For continuous conduction, average volts and the non-conducting time of
output voltage and average output thyristor is 100 μs the ON time
current for this chopper are thyristor would be
respectively: a) 66.6 μs b) 100 μs
a) 40V, 15A b) 66.66V, 28.33A c) 50 μs d) 200 μs
c) 60V, 25A d) 40V, 20A
Q.71 Duty cycle in a chopper circuit with
Q.66 In a two-quadrant dc to dc chopper, switching frequency 100 Hz and TON
the load voltage is varied positive time as 2 ms
maximum to negative maximum by a) 0.2 b) 0.4
c) 0.8 d) none

© Copyright Reserved by Gateflix.in No part of this material should be copied or reproduced without permission
 Q.72 A step up chopper is connected to Q.74 A LC series circuit is connected to a
100 V d.c. supply. For a duty cycle of d.c. supply of 100 V through a
0.5 the output voltage in volts will thyristor, the peak current through
be the thyristor will be
100 100
a) b) 50 a) 100 ( LC ) b)
1.5 LC
c) 150 d) 200  L  C
c) 100   d) 100 
 C   L 
Q.73 A d.c. chopper is fed from a 100 V    
d.c. source. Its output voltage is
rectangular pulses of duration 1 Q.75 If the chopper switching frequency
millisecond in overall cycle time of is 200 Hz and ton time is 2ms, the
3millisecond. Its ripple factor will be duty cycle is
2, the average output voltage in a) 0.4 b) 0.8
volts will be c) 0.6 d) none of the above
a) 25 b) 33.3
c) 50 d) 66.6

ANSWER KEY:
1 2 3 4 5 6 7 8 9 10 11 12 13 14
(b) (c) (b) (b) (b) (b) (b) (b) (c) (b) (b) (a) (a) (c)
15 16 17 18 19 20 21 22 23 24 25 26 27 28
(a) (d) (c) (d) (a) (c) (b) (b) (a) (b) (c) (b) (b) (b)
29 30 31 32 33 34 35 36 37 38 39 40 41 42
(d) (c) (d) (c) (c) (a) (d) (c) (b) (a) (a) (c) (b) (c)
43 44 45 46 47 48 49 50 51 52 53 54 55 56
(c) (b) (c) (b) (b) (c) (a) (c) (b) (b) (a) (c) (c) (a)
57 58 59 60 61 62 63 64 65 66 67 68 69 70
(a) (b) (a) (b) (b) (c) (c) (b) (a) (d) (b) (d) (a) (c)
71 72 73 74 75
(a) (d) (b) (d) (a)

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 EXPLANATIONS

Q.1 (b)
UJT triggering T  half cycle duration
η  0.64 1 1
I2   (3000)2
VBB  20v 100 200
VE  ηVBB  VD 1
I  3000.
 0.64  20  0.7  13.5V 2
 2121.32A
Q.2 (c)
UJT triggering Q.5 (b)
η  0.75 Buck  Vo  VD
VBB  25v V
Boost 
VE  ηVBB  VD 1 D
 0.75  25  0.7 VD
Buck-Boost 
 19.35 1 D
VD
Isolated buck-Boost 
Q.3 (b) a 1  D 
UJT relaxation oscillator
R T  470kΩ
Q.6 (b)
CT  0.01μF, η  0.7 Latching current  4mA  ILat
 l  When Thyristor is conducting (or to
T  R c ln  
ln  start conduction)
 1  Thyristor anode current
 470 103  0.01106 ln   =Latching current
 1  0.7 
di
L v
 5.65ms dt
1 1 I
f   176.7Hz L Lat  100
T 5.65ms t on
0.1 4m
t on 
100
 4μs

Q.7 (b)
Two identical SCRs are placed back
to back  90
If DC voltammeter connected across
load. The voltmeter connected load
Q.4 (b) the voltmeter reads zero +ve half
Half cycle surge current = cycle =-ve half cycle
3000A= isb
Equalizing the charge balance eqn
I2T  Isb
2
t
t  duration;

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 Q.8 (b) 23
 A
Boost converter, 2
Input voltage Vs  5v ,
Output voltage , Vo  15 Q.11 (b)
The relationship between Input & R  10Ω
Output voltage is Vs  200v,  90°
Vo 1 V 1/2
  1 D  s  π   sin 2  
Vs 1  D Vor  Vs  
Vo
 π 2π 
V  Vs 15  5 10 2 V 200
D o     s   141.42v
Vo 15 15 3 2 2
V 141.42
Q.9 (c) Ior  or 
R 10
1  ΦAc voltage controller
 14.2A
R  10Ω
v  200sin 314t Q.12 (a)
 90° 1  ΦAc voltage controller
π
1 2 Vs  260v
vrms  vm sin 2 ωt d  ωt 
2

π R  5ΩwL  12Ω
π
v2m 1  cos 2ωt  At   90° 

π   2  d  ωt  z  R 2  wL2
v2m  sin 2    52  144
   π   
2π  2   13Ω
1
260  2
 π   2 Imax   20 2A at  0°
  90°Vrms  Vm  13
 2π 
v
Vm At  0°  Vrms  m  260v
  100 2
2
260
Power delivered to Load Irms  20A 
v2 100 100 13
 rms  = 1 KW
R 10 Q.13 (a)
1  ΦAcvoltage controller with RL Load
Q.10 (b)
The control range is
R  10Ω &XL  10Ω
  Φ &  π
Vs  230v,  30°   ΦImpedance Angle &
1/2
 π   sin 2   tan−1
WL
Vor  Vs  
2π 
R
 π Conduction angle r  π     π
1/2
 π 
 π  6 sin 60 
 230   
 π 2π 
 
 226v  230v
V 230
Ior  or 
z 102  102
Q.14 (c)

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 1  ΦAc voltage controller Pgav

R  10Ω 8
Vs  200v,  90° 100
Pgm   250W
 π  
1/2
0.4
Vor  Vm  if  90°
 2π 
1/2
Q.17 (c)
 π Single phase Half wave
π  2 
1/2
1 V
 Vm    Vm   vdc  m
 2π  4 π
  2V
Full wave vdc  m
200 2 π
  100 2
2 V  fw   2V(Hw)
100 2 Power  v2
Ior   10 2
10 P  Fw   4P(Hw)
RMS Thyristor current
π
1 2
2π 
2
ITA  Ior dt Q.18 (d)
Half wave SCR controlled
1  π XL  50Ω
2
ITA  .200.  π    100
2π  2  90°
ITA  10A V  800(rms)
Power dissipated =0
Q.15 (a) ( L acts as short circuit to Dc )
R  10Ω
V  200Sin314t Q.19 (a)
 90° L  5μH
Average Thyristor C  20μF
1
π V  200v
2πR 
 Vmsinwt d(wt)

V
 m (1  cos )
2πR
V 200
 m 
2πR 2  π 10 C
10 i  t   vs sin ωo t
 A L
π
1 106 π
Q.16 (d) ωo   105  , peak atωo t 
Thyristor is triggered by pulse train LC 10 2
f  5KHz
D  0.4 π 10
t  15.71us
Pgav  100ω 2 106
Pgm .Ton  Pgav .T C
i cp  vs
Pgav .T L
Pgm  5 200
Ton  200   100A
20 2

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 Q.20 (c) 2Vm
  180°  vdc  
Six pulse converter π
fs  50Hz
Output ripple  6fs  6  50  300Hz Q.24 (b)
1  ΦFull wave converter
π

Q.21 (b) 2
1
1  ΦFull wave converter vdc =
π  V cosθdθ
m
vdc  120v 
π
2
Vm  300v Vm 
π

Firing  ?  sinθ | π2
π 
2
2V
vdc  m cos   π
Vm   π 
π  sin  2     sin    2  
120  π π
    
cos 
2  300 V  π 
 m cos   sin     
 0.6283 π  2 
 51° 2V
 m cos 
π
Q.22 (b)
Half wave rectifier
Vs  200sin 314t
R  50Ω
 30°
π
1 2
vrms 
2
 vm sin 2 ωt d  ωt  Q.25 (c)
2π  1  Φ Half wave controlled rectifier
 π   sin 2  
1/2 vs =400sin314t
Vrms  Vm  
 4π 8π   60°
1/2 V
 π  vdc = m (1  cos )
 π  6 sin 60  2π
Vrms  200    400
 4π 8π  = 1  cos 60 
2π
 
400 3 300
 200 0.208  0.035 = . =
1/2
2π 2 π
 98.4v
V2 Q.26 (b)
P  rms  194watts 1-ΦFull converter
R
Load Current =I
π
Q.23 (a) 1
2π o
IT(avg) = Idt
1  ΦFull wave rectifier
2V I
vdc  m cos  =
π 2
o  90,The converter mode
90  180°,
The inverter mode
2V
  0  vdc  m
π Q.27 (b)

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 1  ΦFull converter 3
= v m =1.5vm
𝜇 is over lap angle 2
 to π+µ,T1 ,T2 are conducting π
At ωt= (A phase is max)
At π ,T3 ,T4 are triggered 2
The current in T1 ,T2 are decreasing, π 
vdc = 3Vmsin  +30 
at the same time 2 
T3 , T4 current increases ⇒ all four 3
= Vm =1.5Vm
diodes are conducts 2

Q.28 (b)
For n-pulse rectifier
π
1 2
nπ o
I 2rms  Id dt

I d2 Q.31 (d)
=
n 1Φ Full bridge converter
Id R=15.53Ω
I rms =
n vs =230v,  60°
2V
Q.29 (d) vdc = m cos 
π
In a 1Φ semi conductor
2  230  2
Discontinuous conduction  cos 60°
β>π, The freewheeling diode π
conducts for β-π,  103.53
103.53
β<π, The FD conducts for zero Idc = =6.66A
15.53
degree π
1 I
i D = Idc dt= dc
2π o 2
 3.33A

Q.32 (c)
In a 3  Φ full bridge converter
Q.30 (c) Output Ripple frequency  6fs
3 − 𝛷 Bridge rectifier fs  supply frequency
vdc = 3vmsin(ωt+30)
π Q.33 (c)
At ωt=
6 1-Φ Half wave controlled rectifier
vdc = 3vmsin60 E=40v
Control range is θ to π-θ

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 vmsinθ  E 2π
Pulse width, 2d= =120°
 40  3
2vsinθ=E  θ=sin -1  
 2v  Q.37 (b)
 40  Single pulse width modulation
π-θ=π-sin -1  
 2v  4v nπ
vom = s sin sin nd
nπ 2
For fifth harmonic to be absent
π
sin5d=π  d= =36°
5
Pulse width, 2d=2×36°=72°
Q.34 (a)
1-Φ Bridge inverter Q.38 (a)
1 Single pulse width modulation
R=2Ω,ωL=8Ω, =?
ωC vs =220v
For the Load commutation, the Load
has to be capacitive
Xc >X L
1  2d 
1/2
>8Ω  Xc =10Ω v rms =vs  
ωC
π
1
π
Q.35 (d) 1  2d  2
2
Vrms = Vs2dt  vs  
180° Conduction mode πo π
Each switch conducts for 180°
= vrms
1/2
2
vrms =220×   =179.63v
3

Q.39 (a)
Single pulse width modulation
For third harmonic to be absent
4v nπ
vom = s sin sin nd
nπ 2
π 2π
Sin nd=π  d=  2d=
n 3
In first two steps  120°
1, 6, 5 4v 2 2vs 3 6
1, 6, 2 vor = s sin60°= , = vs
2π π 2 π
Q.36 (c) 2 2
vor(max) = vs
In single pulse width modulation π
4v nπ
vm = s sin sin nd Q.40 (c)
nπ 2
For Third component to be Multiple pulse width modulation
eliminated Reference voltage,Vr =1V
π courier voltage,Vc =2V
sin nd=π  d=
3 No of pulses, N=5

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 2d  Vr  π  1  π π 2π
= 1-  = 1- =  2d= =120°
N  Vc  N  2  5 10 3
5th harmonic,
 18°
sin 5  60  sin 300  finite
7th harmonic,
Q.41 (b)
sin 7  60  sin 420  finite
In multiple pulse width modulation
9th harmonic, sin 9  60  sin 540
Triangular carrier frequency,
 zero(absent)
fc =6KHz
11th harmonic, sin11 60  sin 660
Amplitude vc =4v  finite
Square reference frequency Frequencies in output:
f r =1KHz 50,250,350,550…..
f 6
Amplitude vr =1vN= c = =3 Q.44 (b)
2f r 2×1
2d  120° for 3rd harmonic
2d  Vr  π  1  π 4v nπ
= 1-  = 1- vom = s sin sin nd
N  Vc  N  4  3 nπ 2
3π π For 5th harmonic to be eliminated
= = =45° π
4×3 4 sinnd=π  5d=π  d=
n
Q.42 (c) 2π
2d=  72°
5

Q.45 (c)
rmv value of output voltage
Sinusoidal pulse width modulation 4v
Carrier amplitude vc =5v Vo1 = s
2π
Frequency, fc =1KHz
2× 2×48
Reference amplitude, vr =1v =
π
Frequency, f r =50Hz =43.3v
The sine and triangular wave zero
crossings are matchinz
f   1000 
N   c  1    1 = 9
 2f r   2  100 
Significant Harmonics
2N  1  2  9  1  17,19
Q.46 (b)
Q.43 (c) A 1  Φ full bridge inverter
Fundamental output frequency
=50Hz
Third harmonic is eliminated
4v nπ
vom = s sin sinnd
nπ 2
π
Sin3d=0  d= =60° T
3 Each diode pair conducts of
4

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 Duration of feedback diode duration Each phase contains 2thyristor ⇒
T T T total 4 thyristors (mid point)
= + =
4 4 2 ⇒ total 8 thyristors
(bridge) 3-Φ to 3-Φ
Each phase contains 6thyristors ⇒
total 18(3pulse)
12thyristors ⇒ total -36(6pulse)

Q.51 (b)
3-Φ to 1-Φ Cyclo converter
m  π 
vor =Vph   sin   m
 π  m
 no of pulses .6pulse
6 π 600 3
vor =200 3× sin = v
Q.47 (b) π 6 π
Correct sequence of operation 3pulse
D1  D4  S1  S4  D3  D2  S2  S3 3 π 300 3
vor =200× sin = v
π 3 π
Q.48 (c)
1-Φ half bridge inverter Q.52 (b)
Vs =48v 1-Φ to 1-Φ Cyclo converter 1 , 2
rms value of fundamental are trigger angles
component Positive group acts like converter
2v 2vs 2×48   90°
Vo1 = s = = v
2π π π Negative group acts like Inverter
  90°
Q.49 (a) 1  2  180°
3-Φ Full bridge
180° Conduction mode 3 switches Q.53 (a)
will conduct 120°
Cyclo converter fs =50Hz
conductionmode 2 switches will
conduct 1
Range of frequency = fs of
3
acceptable quality
1
= ×50=16.66Hz
3

Q.54 (c)
3-Φ Cyclo converter
vor =220v
I=60A,pf=0.6lag
3pulse
m π
Q.50 (c) vor =vph ×   sin
π m
1-Φ to 1-Φ

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 3  π 
220=v ph   sin  
π  3 
220×π×2
vph = =266V
3 3

Q.55 (c)
3-Φ to 3-Φ
Cyclo converter
No. of Thy=18
Thy=36
→ The output in bridge
(36thyristors) is twice that of Average output voltage
midpoint type T
1 on
VA rating(36) 2   Vs dt
= T o
VA rating(18) 1
V
= s Ton =Vs 
Q.56 (a) T
3-Φ to 3-Φ Cyclo converter T
Where  on =Duty cycle
1 T
V18 = V36 (output voltage)  Vs
2 Average current 
V36 =2V18 R
I36 =2I18
Q.58 (b)
Power =4 times RMS Output voltage
T
1 on 2
T o
Q.57 (a)  Vs dt
Type-A chopper
Ton
Vr = Vs 2 = Vs
T

Q.59 (a)
Average thyristor current
When s is ON 1
Ton
T V  Vs

TR o  Vs dt= on . s 
T R R
RMS thyristor current
V Vs
 Ir  r 
R R

When s is OFF Q.60 (b)

In chopper Per unit ripple

=
 
1-e-Ton /Ta 1-e-TOFF /Ta 

1-e-T/Ta 
Ton
The pu ripple is Max. at =0.5=D
T

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 Average voltage across the inductor
is zero
Vs Ton +  Vs -Vo  TOFF
=o
T
T T-Ton
Vs =Vo OFF  Vs =Vo
Q.61 (b) T T

Q.63 (c)
When thyristor is ON

T
1
i D =  Io dt
T Ton di 1
dt c 
L + idt=Vs
T-Ton
= Io
T
 1   Io 
1   Vo
R
T
1 2
i D  rms  
T Ton
Io dt

T  Ton  1 Vs
 Io  Ls + cs  I  s  = s
T
Vo  Lcs2  1 I  s   Vs C
 1  Io  1  
R Vs C V /L
I s   s
Lcs  1 S2  1
2

Q.62 (c) Lc
Step –up chopper 1
 ωo2  resonant frequency
Lc
V 1 C
I s   s 2  Vs sin ω0 t
L s  ωo 2
L
Peak current through Thyristor,
When s is ON C
di T  Vs
L =Vs L
dt
When switch s is OFF Q.64 (b)
di During T is OFF
L =Vs -Vo ,Vo =Vs
dt

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 S1 ,S2 is ON

When T is ON

D1 , D2 Are ON

C
i  t   Vs sinωot
L
1
ωo 
Lc Vs Ton  Vs Toff
  Vs D  Vs (1  D)
0.01 T
i  t   200   Vs  Vs (1 )
100
200 Vo   2D  1 Vs  (2  1)Vs
 2
100 Load voltage is positive if
The capacitor is charged to 200v D  0.5  or   0.5
iT  i1  i 2
Negative if D  0.5  or   0.5
200
 2  22A
10
Q.67 (b)
Q.65 (a) Step –up chopper
Vs  220V, Vo  660
V
Vo  s  1  D
1 D
220 1
   1 
Type A (step-down chopper) 660 3
1 2
Vs  100V D  1   
3 3
Ton  100μs,Toff  150μs
T  TOFF 2
R  2Ω, L  5mH, E  10v   T  100 106
T 3
T 100 2  2
Vo  on Vs  100  T 1   T  100 106
T 100  150 3  3
 0.4 100  40v
 T  300 106
Vo = E + Io R
V −E 40−10
Io = oR = 2 = 15A Q.68 (d)
In Dc choppers
Q.66 (d)

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 Ton Vs 100
Vo  Vs .  f.Vs Ton Vo    200V
T 1  0.5
 Vc .f.Ton
Q.73 (b)
Vs  100V
Ton  1ms
T  3ms
Ripple factor =2
Q.69 (a) T 1
Vo  on Vs  100  33.3V
3  Φ Wound rotor induction motor T 3
R r  2Ω
Q.74 (d)
R ext  4Ω
TOFF  4ms,f  200Hz
1
T  5ms 
200
1m
  0.2  C
5m i  t   Vs sin ωo t
L
R eff  R 1   4 1  0.2 
1
 4  0.8  3.2 ωo 
LC
R total  R r  R eff  2  3.2
 icp sin ωo t
26
  5.2Ω C
5  icp  100
L
Q.70 (c)
Vs  220V Q .75 (a)
Vo  330V,TOFF  100μs f  200Hz
t on  2ms
V 2 2 1
1  o   1    f.t on  200  2 103
Vs 3 3 3
2
 0.4
T  100μs
3
T  150μs
Ton  50μs

Q.71 (a)
f.  100Hz
Ton  2ms
Ton
 f.Ton   2 103 100
T
 0.2

Q.72 (d)
Step up chopper
Vs  100V

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