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MOSFET CS Amplifier

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19 views20 pages

MOSFET CS Amplifier

Uploaded by

Renel Anto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Module 3 – Field Effect Transistor

Topic: AC Circuit Analysis:


Small signal model of MOSFET CS amplifier

Reference books –
Robert Boylestad and Louis Nashelsky, Electronic Devices and Circuits,
Neamen D.A., Electronic Circuit Analysis and Design, McGraw Hill International
Syllabus of Module 3 : Field Effect Transistor

• Types of FETs, basics of construction and working principle; MOSFET structure


and I-V characteristics. MOSFET as a switch. MOSFET as an amplifier
• DC Circuit Analysis: Types of biasing circuits of MOSFET (Numerical), dc load
line and region of operation.
• AC Circuit Analysis: Small signal model of MOSFET CS amplifier, derivation of
expressions for voltage gain and output impedance of MOSFET CS amplifier
• (Numerical).

FCRIT, VASHI 2
Three basic MOSFET transistor amplifier configurations.

• common source,
• common drain (source follower), and
• common gate.

FCRIT, VASHI 3
NMOS common source circuit with time varying signal source in
series with gate dc source

• NMOS common-source circuit


with a time-varying sinusoidal
voltage source in series with the
dc source VGG

Source : Neamen D.A., Electronic Circuit Analysis and Design,


McGraw Hill International 4
Common-source transistor characteristics with dc load line

• As vi increases, the instantaneous


value of v GS increases, and the bias
point moves up the load line. A larger
value of v G S means a larger drain
current and a smaller value of vDS .
• VDS = VDD - ID RD
• For a negative vi (the negative portion
of the sine wave), the instantaneous
value of v G S decreases below the
quiescent value, and the bias point
moves down the load line. A smaller
v G S value means a smaller drain
current and increased value of vDS

Source : Neamen D.A., Electronic Circuit Analysis and Design,


5
McGraw Hill International
• The time-varying signal source v i generates a
time-varying component of the gate-to-source
voltage. vgs is the time varying component of the
gate-to-source voltage.
• For the FET to operate as a linear amplifier, the
transistor must be biased in the saturation
region
• When symmetrical sinusoidal signals are applied
to the input of an amplifier, symmetrical
sinusoidal signals are generated at the output, as
long as the amplifier operation remains linear.
• The load line can be used to determine the
maximum output symmetrical swing. If the
output exceeds this limit, a portion of the output
signal will be clipped and signal distortion will
occur.
• In the case of FET amplifiers, the output signal
must avoid cutoff (i D = 0) and must stay in the
saturation region (vDS > vDS (sat)).

Source : Neamen D.A., Electronic Circuit Analysis and Design,


6
McGraw Hill International
Transfer char. for n-channel enhancement MOSFET
• The transconductance g m is a transfer
coefficient relating output current to input
voltage and can be thought of as
representing the gain of the transistor.
• The transconductance g m is the slope of
the curve.
• If the time-varying signal vgs is sufficiently
small, the transconductance gm is a
constant.
• With the Q-point in the saturation region,
the transistor operates as a current source
that is linearly controlled by vgs
• gm = ΔiD/ΔvGS

Source : Neamen D.A., Electronic Circuit Analysis and Design,


7
McGraw Hill International
Depletion type MOSFETs

FCRIT, VASHI 8
transfer char. (ID v/s VGS) for Depletion MOSFET

FCRIT, VASHI 9
dI D
gm  |Q - po int
dVGS
VGS 2
I D  I DSS (1  )
VP
dI D d VGS 2
 [ I DSS (1  ) ]
dVGS dVGS VP
VGS d VGS
 2 I DSS (1  ){ (1  )}
VP dVGS VP
VGS d d VGS
 2 I DSS (1  ){ (1)  ( )}
VP dVGS dVGS VP
I DSS VGS
gm  2 (1  )
| VP | VP

FCRIT, VASHI 10
relationship between Id and gm
VGS 2
I D  I DSS (1  )
VP
VGS ID
1 
VP I DSS
ID
g m  g mo
I DSS

FCRIT, VASHI 11
AC equivalent model

FCRIT, VASHI 12
FCRIT, VASHI 13
• Input Impedance (Zi)
The input impedance is sufficiently
l a rge to a s s u m e t h at t h e i n p u t
terminals approximate an open circuit.
Its practical value is of the order of
1012 to 1015 Ω for MOSFETs
• The input impedance is
represented by the open circuit at
the input terminals and the output
impedance by the resistor rd from
drain to source.
• The control of Id by Vgs is included
a s a c u r r e n t s o u rc e g m Vg s
connected from drain to source.
• 180° phase shift between output
and input voltages
FCRIT, VASHI 14
• The output impedance of MOSFET
is similar in magnitude to that of
conventional BJTs.
• In specification sheets, the output
impedance will typically appear as
gos or yos with the units of mS.
• Zo = rd = 1/ gos = 1/yos
• The output impedance is defined
on the characteristics as the slope
of the horizontal characteristic
curve at the point of operation.
• The more horizontal the curve, the
greater is the output impedance.
• rd = ΔVDS/ ΔID ` VGS=constant

FCRIT, VASHI 15
voltage-divider configuration

FCRIT, VASHI 16
ac equivalent circuit

FCRIT, VASHI 17
ac equivalent circuit for voltage divider bias of Depletion
MOSFET

FCRIT, VASHI 18
Input impedance (Zi)
• R1 and R2 are in parallel with the open-
circuit equivalence of the MOSFET
• Zi= R1 || R2

Output impedance (Zo)


• Setting Vi = 0 V sets Vgs=0 and current
source gmVgs to zero, hence it will be
open circuit.
• Zo = rd || RD
• For rd ≥ 10RD,
• Zo = RD

FCRIT, VASHI 19
Voltage gain (Av)
• Vgs = Vi
• Vo = -gmVgs(rd || RD)
• Now Av = Vo/Vi
= -gmVgs(rd || RD)/ Vgs

Vo
Av =
Vi
- gmVgs (rd || RD)
=
Vgs

If rd  10R D ,
Vo
Av =  - gmR D
Vi
FCRIT, VASHI 20

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