MOS Field-Effect

Transistors (MOSFETs)

1
An NMOS transistor with vGS > Vt and with a small vDS applied. The device acts as a resistance whose value is determined by
vGS. Specifically, the channel conductance is proportional to vGS – Vt’ and thus iD is proportional to (vGS – Vt) vDS. Note that the
depletion region is not shown (for simplicity).

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The iD–vDS characteristics of the MOSFET in Fig. 4.3 when the voltage applied between drain and source, vDS, is kept
small. The device operates as a linear resistor whose value is controlled by vGS.

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 VDS appears as a voltage drop across the length of the channel. That is, as we travel along
the channel from source to drain, the voltage (measured relative to the source) increases from
zero to VDS .

Operation of the enhancement NMOS transistor as vDS is increased. The induced channel acquires a tapered shape, and its
resistance increases as vDS is increased. Here, vGS is kept constant at a value > Vt.

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The drain current iD versus the drain-to-source voltage vDS for an enhancement-type NMOS transistor operated with vGS >
Vt .

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Biasing in MOS Amplifier Circuits

• bias point is characterized by a stable and

predictable dc drain current ID and by a dc
drain-to-source voltage

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 Biasing by Fixing VGS

0.5
MA

The use of fixed bias (constant VGS) can result in a large variability in the value of ID. Devices 1 and 2 represent extremes
among units of the same type.

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Biasing by Fixing VG and Connecting a
Resistance in the Source

VOV=VGS-Vt

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 Problem-1
It is required to design the circuit of VDB to establish a
dc drain current ID = 0.5 mA. The MOSFET is
,
specified to have Vt = 1 V,Kn W/L=1mA/V2, and For
simplicity, neglect the channel-length modulation effect
(i.e., assume λ = 0). Use a power-supply VDD = 15 V.
Calculate the percentage change in the value of ID
obtained when the MOSFET is replaced with another
• having
unit . the same but Vt = 1.5 V

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Copyright  2004 by Oxford University Press, Inc. 10
 VDD*RG2/
RG1+RG2=VG
RG1=RG2

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 Observe that the dc voltage at the drain (+10 V) allows for a positive
signal swing of +5 V) and a negative signal swing of –4 V [i.e., down
to (VG – Vt )].

Circuit for Example 4.9.

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Biasing using a fixed voltage at the gate, VG, and a resistance in the source lead, RS: (a) basic
arrangement; (b) reduced variability in ID; (c) practical implementation using a single supply;
(d) coupling of a signal source to the gate using a capacitor CC1; (e) practical implementation
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 Biasing Using a Drain-to-Gate Feedback Resistor

VDD-IDRD-IGRG=VG

Biasing the MOSFET using a large drain-to-gate feedback resistance, RG.

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Small-Signal Operation and Models
The DC Bias Point

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 The Signal Current in the
Drain Terminal

Conceptual circuit utilized to study the operation of the MOSFET as a small-signal amplifier.

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The Signal Current in the Drain
Terminal

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The Signal Current in the Drain
Terminal

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The Signal Current in the Drain
Terminal

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Small-signal operation of the enhancement MOSFET amplifier.

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The Voltage Gain

24
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Total instantaneous voltages vGS and vD for the circuit in Fig. 4.34.

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 Small-Signal Equivalent-Circuit Models

Small-signal models for the MOSFET: (a) neglecting the dependence of iD on vDS in saturation (the channel-length modulation
effect); and (b) including the effect of channel-length modulation, modeled by output resistance ro = |VA| /ID.

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 Small-Signal Equivalent-Circuit Models

• voltage-controlled current source.

• It accepts a signal vgs between gate and source and
provides a current at the drain terminal.
• The input resistance is very high—ideally infinite.
• The output resistance—also is high,
• dc voltage sources are replaced by short circuits
• dc current source can be replaced by an open circuit
in the small-signal equivalent circuit of the amplifier.

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Small-Signal Equivalent-Circuit Models
saturation, iD is independent of vDS .

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Pmos

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 saturation, iD is independent of vDS.
Specifically, as vDS is increased, the channel pinch-off point is moved slightly
away from the drain, toward the source.

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 Increasing vDS beyond vDSsat causes the channel pinch-off point to move
slightly away from the drain, thus reducing the effective channel length (by
ΔL)

λ is a device parameter having the units of reciprocal volts

λ, is inversely proportional to L .

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Channel length moduation

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o/p resistance

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The Transconductance gm

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The Transconductance gm

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PROBLEM 1

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PROBLEM 1

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PROBLEM 2

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PROBLEM 2

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 Development of the T equivalent-circuit model for the MOSFET.
For simplicity, ro has been omitted; however, it may be added between D and S in the T model of (d)
This addition obviously does not change the terminal currents.
The newly created circuit node, labeled X, is joined to the gate terminal G in Fig. 5.40(c)

We can replace this controlled source by a resistance as long as this resistance draws an equal current as
the source

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 Source-Absorption Theorem
We can replace controlled current source by an impedance ,
, because the current drawn by this impedance will be equal to the current of the
controlled source that we have replaced.

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(a) The T model of the MOSFET augmented with the drain-to-source
resistance ro. (b) An alternative representation of the T model

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 I is replaced with an open circuit
and the dc voltage source is replaced by a short circuit.
The large coupling capacitors have been replaced by short circuits.

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The three basic MOSFET amplifier configurations

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 Characterizing Amplifiers

• unilateral.
• , they do not contain internal feedback, and
thus Rin will be independent of RL.
• Rin represents the loading effect of the
amplifier input on the signal source
• RL can be an actual load resistance or the input
resistance of a succeeding amplifier stage in a
cascade amplifier.
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Cascaded Amplifier

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 Characterization of the amplifier as a functional block: (a) An amplifier fed with a
voltage signal vsig having a source resistance Rsig, and feeding a load resistance RL;
(b) Equivalent-circuit representation of the circuit in (a); (c) Determining the amplifier
output resistance

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 Characterizing Amplifiers

• open-circuit voltage gain , AVO

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Characterizing Amplifiers

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Voltage gain

=
=

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Table 4.3

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The Common-Source (CS) Amplifier
(a)Common-source amplifier fed with a signal v from a generator with a resistance R
sig sig . The
bias circuit is omitted.
(b) The common-source amplifier with the MOSFET replaced with its hybrid- model.

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 Considering RL

• .

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Characteristic Parameters of the CS Amplifier

, the bandwidth of the CS

amplifier is limited.

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 Characteristic Parameters of the CS Amplifier

RD< ro

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 Overall Voltage Gain

load resistance RL is considered

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Performing the Analysis Directly on the Circuit
Diagram

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The Common-Source Amplifier with a Source
Resistance , whenever a resistance is
connected in the source
lead, the T model is
preferred.

The source resistance then

appears in series with the
resistance 1/gm

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 Effect of ro

• ro would connect the output node of the

amplifier to the input side
• make the amplifier nonunilateral.

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The Common-Source Amplifier with a Source
Resistance

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The Common-Source Amplifier with a Source Resistance

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source-degeneration resistance.

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Voltage gain

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Problem 4

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 Problem 4
Fig cs amplifier

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(b) circuit for determining the dc operating point;
(c) the amplifier small-signal equivalent circuit;

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 Problem 4
(d) a simplified version of the circuit in (c

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Problem 4

VD=15-IDRD=15-10ID
• .

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Problem 4

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 Problem 4
VOLTAGE GAIN

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 Problem 4

vo = -

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 Problem 4

4.4-3.3v^i = 4.4+vi-1.5

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Problem4B:
Design the circuit of Fig. to obtain a dc emitter current of 1 mA, maximum
gain, and a ± 2-V signal swing at the collector; that is, design for V CE = +2.3
V. Let VCC= 10 V and β = 100.
• .

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Problem 4B

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Problem 5

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Problem 5

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 Problem 6

• . VCE=VCC-ICRC

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Problem 6 .

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Problem 7

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Problem 7

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