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Carrier Transport in Semiconductor

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337 views21 pages

Carrier Transport in Semiconductor

Uploaded by

nivetha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Carrier Transport in Semiconductor

In semiconductor current conduction can be


either
• Due to applied electric field - Drift current
• Due to difference in concentration gradient -
Diffusion Current
Drift Current
• When small electric field is applied across a semiconductor
bar , Charge carriers occur certain velocity called drift velocity
vd.
• Hole move towards the negative terminal of the battery and
electrons moves towards the positive terminal of the battery
• The movement of charge carrier constitute a current known
as drift current
Drift Current
• We know J = qnv= qnvd.
Drift Current
Drift Current
• Maximum resistivity is obtained when silicon is slightly p type

• To find maximum resistivity

• As μn > μp sample is slightly P type


Diffusion Current
• When there is concentration gradient the carrier tend to shift
from the region of higher concentration to lower
concentration, there by constituting a current flow called the
diffusion current
Diffusion Current
Diffusion Current
Einstein’s Relation
• Relation between mobility and diffusion
coefficient
Einstein’s Relation
Hall effect
• Directly measuring Carrier Concentration. When
magnetic field is applied in a direction perpendicular
to the flow of charge carriers, the path of carrier get
deflected
• P type semiconductor
Hall effect
• Increase in hole concentration at the top surface till
• This establishment of electric field is called Hall effect
• Voltage across AB is hall voltage
Conitinuity Equation
Continuity Equation- Derivation
Continuity Equation- Derivation
Continuity Equation- Derivation

• By substituting Current density and carrier recombination equations


Continuity Equation-Derivation
• By solving continuity eqn n,p,E can be evaluated
• To solve this three eqns are required
• Because of nonlinear nature of the equation analytical
solutions are possible only with assumptions
• In the case flow of electron in the absence of electric field and
there is generation and recombination continuity eqn
becomes
Special case of Continuity equation
• Excess electrons injected from one side Due to illumination . Due to this
carrier concentration increases at one surface (x=0)
• These excess carrier diffuse and recombine due that continuous decrease
in their concentration then in deep inside concentration reduced to their
thermal equilibrium value
• Equal amount of electron and hole current or other words total current is
zero
Special case of Continuity equation-
Diffusion length
• Quasi neutrality condn- At any time excess electron and hole concentration
gradient and concentration are equal

• But small imbalance in the excess electron and hole concentration and the quasi
neutrality condition is valid

• For small electric field created drift of minority carriers can be neglected
Special case of Continuity equation-
Diffusion length
• Continuity equation by neglecting drift of
holes in N Type semiconductor

• At steady state
Special case of Continuity equation-
Diffusion length
• A and B

• By sub in diffusion current eqn

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