AONP38324U

30V Dual Asymmetric N-Channel MOSFET

General Description Product Summary

Q1 Q2
• Bottom source technology VDS 30V 30V
• Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 155A 118A
• Low Gate Charge RDS(ON) (at VGS=10V) < 2.4mΩ < 2.3mΩ
• High Current Capability
RDS(ON) (at VGS=4.5V) < 3mΩ < 2.9mΩ
• RoHS 2.0 and Halogen-Free Compliant

Applications 100% UIS Tested

100% Rg Tested
• Buck-boost Converters in Computing
• Point of Load Converter

DFN3.3x3.3D Top View Bottom View

Q2

Q1
Pin 1
Pin 1

Orderable Part Number Package Type Form Minimum Order Quantity

AONP38324U DFN3.3x3.3D Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±12 ±12 V
Continuous Drain TC=25°C 155 118
ID
Current TC=100°C 97 75 A
C
Pulsed Drain Current IDM 620 472
Continuous Drain TA=25°C 29 29
IDSM A
Current TA=70°C 23 23
Avalanche Current C IAS 60 55 A
C
Avalanche energy L=0.01mH EAS 18 15 mJ
TC=25°C 89 50
PD W
Power Dissipation B TC=100°C 35 20
TA=25°C 3.2 3.2
PDSM W
Power Dissipation A TA=70°C 2 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 32 32 39 39 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 58 58 73 73 °C/W
Maximum Junction-to-Case Steady-State RqJC 1.1 2 1.4 2.5 °C/W

Rev.1.0: June 2024 www.aosmd.com Page 1 of 10

 AONP38324U

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 1.6 2 V
VGS=10V, ID=20A 2 2.4
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 2.8 3.4
VGS=4.5V, ID=20A 2.4 3 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 135 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 100 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2050 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 500 pF
Crss Reverse Transfer Capacitance 50 pF
Rg Gate resistance f=1MHz 0.5 1.2 1.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 27 38 nC
Qg(4.5V) Total Gate Charge 12 17 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 5.2 nC
Qgd Gate Drain Charge 2.1 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 30 ns
tf Turn-Off Fall Time 4.5 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 32 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

Rev.1.0: June 2024 www.aosmd.com Page 2 of 10

 AONP38324U

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

90 90
3V
80 80 VDS=5V
70 70
60 4.5V 60
50 10V 50
ID (A)

ID (A)
40 40 125°C
2.5V
30 30
20 20 25°C
10 2.3V 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

4 1.6
Normalized On-Resistance

VGS=4.5V VGS=10V
3 1.4 ID=20A
RDS(ON) (mW)

2 1.2

VGS=10V VGS=4.5V
ID=20A
1 1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage (Note E) Temperature (Note E)

6 1.0E+01
ID=20A
5 1.0E+00

125°C
4 1.0E-01
RDS(ON) (mW)

125°C
IS (A)

3 1.0E-02
25°C
2 1.0E-03
25°C
1 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
(Note E)

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 AONP38324U

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=15V
Ciss
ID=20A
8 2000

Capacitance (pF)
VGS (Volts)

6 1500

4 1000
Coss

2 500
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 400
TJ(Max)=150°C
350
1ms TC=25°C
100 RDS(ON)
300
limited 10ms
100ms 250
Power (W)
ID (Amps)

10
DC 1ms
200
10ms
1
150

100
0.1 TJ(Max)=150°C
TC=25°C 50

0.01 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F) Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=1.4°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AONP38324U

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 180

150
80
Power Dissipation (W)

120

Current rating ID (A)

60
90
40
60

20
30

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
ZqJA Normalized Transient

D=Ton/T In descending order

Thermal Resistance

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RqJA=73°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

Rev.1.0: June 2024 www.aosmd.com Page 5 of 10

 AONP38324U

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.7 2.1 V
VGS=10V, ID=20A 1.9 2.3
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 2.7 3.3
VGS=4.5V, ID=20A 2.3 2.9 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 150 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 60 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1960 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 470 pF
Crss Reverse Transfer Capacitance 55 pF
Rg Gate resistance f=1MHz 0.6 1.2 1.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 28 40 nC
Qg(4.5V) Total Gate Charge 12.5 18 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 5.5 nC
Qgd Gate Drain Charge 2.2 nC
tD(on) Turn-On DelayTime 5.8 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W, 5 ns
tD(off) Turn-Off DelayTime RGEN=3W 27 ns
tf Turn-Off Fall Time 4.4 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 13 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 24 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

Rev.1.0: June 2024 www.aosmd.com Page 6 of 10

 AONP38324U

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
3V VDS=5V
70 70

60 60
4.5V
50 50
10V 125°C
ID (A)

ID (A)
40 40

30 30
25°C
20 2.5V 20

10 VGS=2.3V 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

4 1.6
Normalized On-Resistance

VGS=10V
3 1.4
ID=20A
VGS=4.5V
RDS(ON) (mW)

2 1.2

VGS=10V VGS=4.5V
ID=20A
1 1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage (Note E) Temperature (Note E)

6 1.0E+01
ID=20A
1.0E+00
5
125°C
1.0E-01
RDS(ON) (mW)

4
IS (A)

125°C 1.0E-02
3 25°C
1.0E-03

2
1.0E-04
25°C

1 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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 AONP38324U

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=15V
ID=20A Ciss
8 2000

Capacitance (pF)
VGS (Volts)

6 1500

4 1000
Coss
2 500
Crss

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 200
TJ(Max)=150°C
TC=25°C
100 RDS(ON) 1ms 160
limited
10ms
ID (Amps)

10
Power (W)

100ms 120
DC 1ms
1 10ms
80

0.1 TJ(Max)=150°C
40
TC=25°C

0.01
0.01 0.1 1 10 100 0
0.0001 0.001 0.01 0.1 1
VDS (Volts)
Figure 9: Maximum Forward Biased Pulse Width (s)
Safe Operating Area (Note F) Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=2.5°C/W
1

0.1 PDM
Single Pulse

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AONP38324U

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 140

50 120
Power Dissipation (W)

100
40

Current rating ID (A)

80
30
60
20
40

10 20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
ZqJA Normalized Transient

D=Ton/T In descending order

Thermal Resistance

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RqJA=73°C/W

0.1
PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

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 AONP38324U

Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Figure C: UnclampedInductive
Unclamped InductiveSwitching
Switching (UIS)
(UIS) Test
Test Circuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure
DiodeD: Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0: June 2024 www.aosmd.com Page 10 of 10